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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:


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Patent Number Title Of Patent Date Issued
8133770 Semiconductor device and method for manufacturing the same March 13, 2012
A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direc
8133749 Semiconductor device and method for manufacturing the same March 13, 2012
In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impa
8132026 Power storage device and mobile electronic device having the same March 6, 2012
To provide a power storage device for regularly supplying power to a mobile electronic device, in which charging of a battery by a power feeder can be simplified and even when power stored in the battery is not enough, power can be regularly supplied to the mobile electronic device.
8130354 Liquid crystal display device and electronic device March 6, 2012
To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal di
8130350 Liquid crystal display device and electronic apparatus March 6, 2012
The present invention provides a liquid crystal display device including a liquid crystal layer disposed between a first substrate and a second substrate, a pixel electrode in a reflection region and a transmission region over the first substrate, a film for adjusting a cell gap in the
8130291 Defective pixel specifying method, defective pixel specifying system, image correcting method, a March 6, 2012
A defective pixel specifying method and a defective pixel specifying system for a semiconductor device having a defective pixel are provided. Also provided are an image correcting method and an image correcting system for making a defective pixel inconspicuous on the screen when a re
8130191 Semiconductor device March 6, 2012
A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a
8129900 Display device and method for manufacturing the same March 6, 2012
According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive
8129719 Semiconductor device and method for manufacturing the semiconductor device March 6, 2012
An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric
8129717 Semiconductor device and method for manufacturing the same March 6, 2012
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxid
8129232 Semiconductor device and method of manufacturing the same March 6, 2012
A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal o
8127998 Semiconductor device March 6, 2012
A semiconductor device is provided, which includes an antenna, a first circuit (a boosting circuit), a second circuit (a reference voltage supply circuit), and a third circuit (a voltage comparison circuit). The first circuit is electrically connected to the antenna, and includes at
8125144 Light-emitting element, light-emitting device, and vapor deposition apparatus February 28, 2012
To provide a light-emitting element and a light-emitting device which can be designed and manufactured with redundancy. A light-emitting element of the invention includes a pair of electrode, and a layer containing a light-emissive substance between the pair of electrodes. The layer
8125121 Switching element, method for manufacturing the same, and display device including switching ele February 28, 2012
A method for manufacturing a switching element which has enough resistance to repeat switching operations and which can be miniaturized and have low power consumption, and a display device including the switching element are provided. The switching element includes a first electrode
8125107 Switch device and power supply control system February 28, 2012
The switch device includes a control switch that turns on/off an electrical connection between an apparatus and the power supply, a condition judging circuit that judges conditions of driving the control switch, an electric wave reception circuit that receives an electric wave, and a
8124973 Electronic appliance including transistor having LDD region February 28, 2012
A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating f
8124972 Thin film transistor February 28, 2012
The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semicon
8124924 Photoelectric conversion device and electronic device provided with the photoelectric conversion February 28, 2012
An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage V.sub.out generated at the gate terminal of the MOS transistor is
8124922 Photoelectric conversion device including photoelectric conversion element and amplifier circuit February 28, 2012
Objects are to accumulate electric charge in a capacitor so that light intensity can be detected even when the amount of incident light is small, and to operate a photoelectric conversion device without increasing the number of elements such as a constant current source or a switch.
8123896 Laminating system February 28, 2012
It is an object of the invention to improve the production efficiency in sealing a thin film integrated circuit and to prevent the damage and break. Further, it is another object of the invention to prevent a thin film integrated circuit from being damaged in shipment and to make it
8123862 Deposition apparatus and manufacturing apparatus February 28, 2012
An object of the present invention is to carry out stable film deposition for a long stretch of time without an evaporation material being stuck in a manufacturing apparatus that carries out evaporation. A driving portion that can move a crucible up and down is provided for an evaporatio
8120721 Liquid crystal display device February 21, 2012
It is an object to provide a liquid crystal display device which has excellent viewing angle characteristics and higher quality. The present invention has a pixel including a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal el
8120557 Light emitting device and electronic appliance February 21, 2012
The present invention is to provide a light emitting device capable of obtaining a certain luminance without influence by the temperature change, and a driving method thereof. A current mirror circuit formed by using a transistor is provided for each pixel. The first transistor and t
8120552 Electronic device and method of driving electronic device February 21, 2012
Problems such as insufficient brightness, caused by a reduction in duty ratio (the ratio of a light emitting period and a non-light emitting period), are improved upon in accordance with using a novel method of driving and a novel circuit in an electronic device. Signals are written
8120538 Wireless chip February 21, 2012
The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled
8120491 Wheeled vehicle mounted with RFID tag, RFID tag, speed measurement system, and speed measurement February 21, 2012
An RFID tag having a memory portion for holding information on a wheeled vehicle is mounted on the wheeled vehicle, and an external interrogator and the RFID tag exchange information with each other. Further, an RFID tag having a memory portion for holding information on a wheeled vehicl
8120435 PLL circuit and semiconductor device having the same February 21, 2012
A PLL circuit includes a phase detector, a loop filter (LF), a voltage-controlled oscillator (VCO), and a frequency divider. The phase detector compares a phase of a signal Fs which is input from outside with a phase of a signal Fo/N which is input from the frequency divider. The loo
8120159 Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using s February 21, 2012
A step of forming a through hole in a semiconductor substrate, or a step of polishing the semiconductor substrate from its back surface requires a very long time and causes decrease of productivity. In addition, when semiconductor substrates are stacked, a semiconductor integrated circui
8120111 Thin film transistor including insulating film and island-shaped semiconductor film February 21, 2012
An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem
8120039 Semiconductor device February 21, 2012
In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconducto
8120034 Integrated circuit device and method for manufacturing integrated circuit device February 21, 2012
An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a
8120033 Semiconductor element and display device using the same February 21, 2012
Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the ac
8120031 Display device including an opening formed in a gate insulating film, a passivation film, and a February 21, 2012
A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in t
8120030 Thin film transistor and display device February 21, 2012
Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with t
8119490 Method for manufacturing SOI substrate February 21, 2012
A semiconductor substrate and a base substrate made from an insulator are prepared; an oxide film containing a chlorine atom is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form an embrittled region at
8119468 Thin film transistor and method for manufacturing the same February 21, 2012
Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting
8119188 Process of manufacturing luminescent device February 21, 2012
A method of forming a film consisted of an organic compound material at low cost using an organic compound material having the high luminescence efficiency is provided. The present invention is characterized by the fact that a layer containing an organic compound is formed on the sub
8115883 Display device and method for manufacturing the same February 14, 2012
An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver
8115788 Display device, driving method of display device, and electronic appliance February 14, 2012
An object is to reduce a pseudo contour occurring in time gray scale method display. One pixel is divided into m subpixels (m is an integer of m.gtoreq.2), and the area of the (s+1)th subpixel (1.ltoreq.s.ltoreq.m-1) is twice the area of the s-th subpixel. Further, one frame is divided
8115785 Method for driving liquid crystal display device, liquid crystal display device, and electronic February 14, 2012
An object of the present invention is to provide a driving method of a liquid crystal display device for improvement of image quality and a liquid crystal display device in which the driving method is used. One frame period is divided up into an n (n: integer, n.gtoreq.3) number of p
8115758 Light emitting device February 14, 2012
Power consumption required for charging and discharging a source signal line is reduced in an active matrix EL display device. A bipolar transistor (Bi1) has a base terminal B connected to an output terminal c1 of an operational amplifier (OP1), a collector terminal C connected to a
8115278 Manufacturing method of semiconductor device, evaluation method of semiconductor device, and sem February 14, 2012
A semiconductor element formed over the same substrate as a TFT, includes a semiconductor film having an impurity region; an insulating film formed over the semiconductor film; an electrode divided into a plurality of parts over the insulating film by spacing a distance a in a first
8115210 Semiconductor display device February 14, 2012
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or
8115206 Semiconductor device February 14, 2012
It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer in
8115201 Semiconductor device with oxide semiconductor formed within February 14, 2012
One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced,
8115160 Protection circuit and photoelectric conversion device February 14, 2012
A protection circuit and a photoelectric conversion device are provided, each of which includes a first wiring, a second wiring, a first switch, a second switch, a capacitor, and a comparing circuit configured to generate a signal corresponding to a potential of the first wiring and a
8114760 Method for manufacturing microcrystalline semiconductor and thin film transistor February 14, 2012
A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper
8114722 Manufacturing method of semiconductor device February 14, 2012
To suppress generation of dangling bonds, the present invention relates to a method for manufacturing a semiconductor device including the steps of: forming a semiconductor film; forming a gate insulating film and a gate electrode over the semiconductor film; forming an impurity region i
8114720 Semiconductor device and manufacturing method thereof February 14, 2012
An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of
8114719 Memory device and manufacturing method of the same February 14, 2012
An easy-to-use and inexpensive memory device is provided while maintaining product specifications and productivity even when a memory is formed on the same substrate as other functional circuits. The memory device of the invention includes a memory cell formed on an insulating surfac
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