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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:


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Patent Number Title Of Patent Date Issued
8153506 Semiconductor device and method of manufacturing the same April 10, 2012
It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality
8149346 Display device and manufacturing method thereof April 3, 2012
It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern havi
8149043 Semiconductor device and electronic apparatus using the same April 3, 2012
The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present
8149018 Sense amplifier and electronic apparatus using the same April 3, 2012
A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-s
8148895 Display device and manufacturing method of the same April 3, 2012
It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element does not impart an adverse effect on the light-emitting element. It is another object of the invention to provide a method for
8148818 Semiconductor device and method for manufacturing the same April 3, 2012
A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators be
8148743 Semiconductor device including semiconductor circuit made from semiconductor element and manufac April 3, 2012
In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterize
8148730 Semiconductor device and method for manufacturing semiconductor device April 3, 2012
A first resist pattern is formed by exposure using a first multi-tone photomask, and a first conductive layer, a first insulating layer, a first semiconductor layer, and a second semiconductor layer are etched, so that an island-shaped single layer and an island-shaped stack are form
8148723 Light-emitting device and manufacturing method thereof April 3, 2012
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first etching is performed to expose the first conductive film and form at least a pattern of the
8148236 Display device and method for manufacturing thereof April 3, 2012
An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion i
8148215 Non-volatile memory and method of manufacturing the same April 3, 2012
A non-volatile memory in which a leak current from an electric charge accumulating layer to an active layer is reduced and a method of manufacturing the non-volatile memory are provided. In a non-volatile memory made from a semiconductor thin film that is formed on a substrate (101)
8144301 Semiconductor device March 27, 2012
When a columnar spacer is provided in a region overlapping with a TFT, there is a concern that pressure will be applied when attaching a pair of substrates to each other, which may result in the TFT being adversely affected and a crack forming. A dummy layer is formed of an inorganic
8144146 Display device and electronic device March 27, 2012
The display device of the invention includes a light emitting element, a monitoring light emitting element, a constant current source which supplies a constant current to the monitoring light emitting element, a time-based measurement circuit which measures time to supply a power sou
8144144 Display device March 27, 2012
A display device according to the present invention includes a switching regulator control circuit formed of TFTs. A digital switching regulator control circuit is composed of an AD converter circuit, a CPU, a pulse generation circuit or the like. An analog switching regulator control
8144013 Semiconductor device March 27, 2012
A semiconductor device with improved reliability, in which increase in power consumption can be reduced. The semiconductor device includes an antenna for transmitting and receiving a wireless signal to/from a communication device and at least first and second functional circuits elec
8143919 Semiconductor device and a display device March 27, 2012
The invention provides a low cost and high performance functional circuit by reducing time required for the repetition of logic synthesis and routing of layout in a functional circuit design. A standard cell used for the logic synthesis and the routing of layout is configured by a lo
8143844 Charging device March 27, 2012
The charging circuit includes an antenna circuit receiving radio waves, a rectifier circuit rectifying AC voltage generated in the antenna circuit to generate DC voltage, and a power supply circuit adjusting the magnitude of the DC voltage and charging a rechargeable battery using the
8143629 Lighting system and lighting device March 27, 2012
An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a thir
8143627 Semiconductor device March 27, 2012
In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal li
8143625 Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m March 27, 2012
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, an
8143170 Manufacturing method of semiconductor device March 27, 2012
A single crystal semiconductor layer is provided over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed therebetween; an impurity element having one conductivity type is selectively added to the single crystal semiconducto
8143168 Etching method and manufacturing method of semiconductor device March 27, 2012
The present invention discloses technique of etching selectively a layer containing siloxane. The present invention provides a semiconductor device with reduced operation deterioration due to etching failure. A method for manufacturing a semiconductor device comprises steps of formin
8143134 Method for manufacturing SOI substrate March 27, 2012
The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type io
8143118 TFT device with channel region above convex insulator portions and source/drain in concave betwe March 27, 2012
A semiconductor device having a highly responsive thin film transistor (TFT) with low subthreshold swing and suppressed decrease in the on-state current and a manufacturing method thereof are demonstrated. The TFT of the present invention is characterized by its semiconductor layer where
8143087 Method of manufacturing photoelectric conversion device March 27, 2012
A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting su
8140045 Semiconductor device March 20, 2012
A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the
8139001 Display device March 20, 2012
A display device with high-definition, in which display unevenness due to a voltage drop in a wiring or display unevenness due to a variation in characteristics of TFTs are suppressed. The display device of the invention comprises a first wiring for transmitting a video signal and a
8138670 Light-emitting device and method of manufacturing the same, and method of operating manufacturin March 20, 2012
The inventors have anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on an EL layer of an active matrix light-emitting device because the TFT of the active matrix light-emitting device is disposed below the EL layer. How
8138667 Light emitting device having metal oxide layer and color filter March 20, 2012
It is an object of the present invention to provide a light-emitting device that is high in color purity of light and is high in light extraction efficiency, where sputtering is used to form an electrode on an electroluminescent layer without damage to a layer including an organic ma
8138614 Semiconductor device having an antenna with anisotropic conductive adhesive March 20, 2012
It is an object to provide a semiconductor device capable of transmitting and receiving data with a reader/writer and reducing breakdown or interference due to static electricity. A semiconductor device includes a semiconductor integrated circuit, a conductive layer serving as an ant
8138589 Semiconductor device and method of fabricating the same March 20, 2012
In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the
8138560 Microstructure, micromachine, and manufacturing method of microstructure and micromachine March 20, 2012
Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to
8138555 Semiconductor device and its manufacturing method March 20, 2012
An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion, a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increa
8138502 Light-emitting device and manufacturing method thereof March 20, 2012
To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emittin
8138101 Manufacturing method for semiconductor device March 20, 2012
The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation
8138063 Manufacturing method of a semiconductor device including a single crystal semiconductor film, an March 20, 2012
An object of the present invention is to provide a semiconductor device having a structure which can realize not only suppressing a punch-through current but also reusing a silicon wafer which is used for bonding, in manufacturing a semiconductor device using an SOI technique, and a
8138032 Method for manufacturing thin film transistor having microcrystalline semiconductor film March 20, 2012
A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact
8138004 Photoelectric conversion device, manufacturing method thereof and semiconductor device March 20, 2012
A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semic
8137417 Peeling apparatus and manufacturing apparatus of semiconductor device March 20, 2012
An object is to eliminate electric discharge due to static electricity generated by peeling when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element. A substrate over which an element formation layer
8136735 ID label, ID card, and ID tag March 20, 2012
As a non-contact ID label, ID tag and the like being widespread, it is required to manufacture a considerable quantity of ID labels at quite a low cost. An ID label attached to a product is, for example, required to be manufactured at 1 to several yens each, or preferably less than one
8136725 IC card March 20, 2012
The present invention includes an IC card that can realize high function without increasing the size of an IC chip, and that can realize cost reduction. The IC card has a first single crystal integrated circuit, a second integrated circuit, and a display device. The second integrated
8134862 Semiconductor memory device and semiconductor device March 13, 2012
An object is to provide a semiconductor memory device which holds data of an SRAM or a flip-flop circuit and holds data in the SRAM while electric power is not supplied from a reader or electric power is not enough, without changing a battery for driving a power supply corresponding to
8134546 Display device and driving method thereof March 13, 2012
In order to keep the luminance of a light emitting element constant, the correction is performed by an external device such as a computer, in which case a display device is inevitably complicated and increased in size. Even when degradation characteristics of the light emitting element
8134531 Source line driving circuit, active matrix type display device and method for driving the same March 13, 2012
If the frequency of a clock signal is increased, the pulse width of a sampling pulse is decreased, and the amount of time for a video signal to be written to a source line is inadequate. Sampling pulses (sam) rise sequentially in synchronization with the rise of a start pulse (SP). As
8134157 Semiconductor device and method of manufacturing same March 13, 2012
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low
8134156 Semiconductor device including zinc oxide containing semiconductor film March 13, 2012
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconduc
8134153 Semiconductor apparatus and fabrication method of the same March 13, 2012
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liqu
8134149 Organic light emitting device March 13, 2012
The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from pe
8134147 Organic compound, anthracene derivative, and light-emitting element, light-emitting device, and March 13, 2012
Objects of the present invention are to provide novel anthracene derivatives and novel organic compounds; a light-emitting element that has high emission efficiency; a light-emitting element that is capable of emitting blue light with high luminous efficiency; a light-emitting elemen
8133771 Display device and manufacturing method of the same March 13, 2012
A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the in
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