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Semiconductor Energy Laboratory Co., Ltd. Patents
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Address:
Atsugi-shi, Kanagawa-ken, JP
No. of patents:
5195
Patents:


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Patent Number Title Of Patent Date Issued
8174007 Organic light emitting element and display device using the element May 8, 2012
A hole transporting region made of a hole transporting material, an electron transporting region made of an electron transporting material, and a mixed region (light emitting region) in which both the hole transporting material and the electron transporting material are mixed and whi
8174006 Semiconductor device and manufacturing method thereof and method for writing memory element May 8, 2012
An object is to provide a higher-performance and higher-reliability memory device and a semiconductor device provided with the memory device at low cost and with high yield. A semiconductor device of the invention has a memory element including an insulating layer and an organic comp
8173977 Laser irradiation apparatus and laser irradiation method May 8, 2012
It is an object of the present invention to provide a laser irradiation apparatus and a laser irradiation method that increase energy intensity distribution in a region having low energy intensity distribution in an end region in a major-axis direction of laser light, in performing laser
8173520 Semiconductor device and manufacturing method thereof May 8, 2012
It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an ob
8173519 Method for manufacturing semiconductor device May 8, 2012
A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the ligh
8173496 Method for manufacturing semiconductor device May 8, 2012
A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity sem
8169588 Liquid crystal display device and method for manufacturing the same May 1, 2012
A flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is provided. A method for manufacturing, with high yield, a flexible and highly reliable liquid crystal display device which is not easily damaged even if s
8169192 Wireless power storage device, semiconductor device including the wireless power storage device, May 1, 2012
To simplify charging of a battery in a power storage device which includes the battery. Further, to provide a wireless power storage device which can transmit and receive information without the task of replacing a battery for drive power supply, which becomes necessary when the batt
8169137 Light source and device using electroluminescence element May 1, 2012
Deterioration of the whole electroluminescence layer which is caused by moisture penetration through the electroluminescence layer because of a pinhole in an electrode is prevented. A plurality of island-shaped electroluminescence layers is provided. That is, an electroluminescence l
8168975 Semiconductor device and manufacturing method thereof May 1, 2012
A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer
8168973 Thin film transistor May 1, 2012
The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one conductivity type over t
8168523 Manufacturing method of semiconductor device May 1, 2012
The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light inten
8168512 Manufacturing method of semiconductor device May 1, 2012
To provide a thin semiconductor device having flexibility. A groove is formed in one surface of a substrate; an element layer including an element is formed, the element being disposed within the groove; the substrate is thinned from the other surface of the substrate until one surfa
8168510 Method for manufacturing semiconductor layer and semiconductor device May 1, 2012
An object is that a region separated from a semiconductor substrate when a supporting substrate is larger than the semiconductor substrate does not easily move. A method for manufacturing a semiconductor layer includes the steps of: irradiating a plurality of semiconductor substrates
8168481 Method of manufacturing SOI substrate May 1, 2012
The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third ste
8168461 Micro-electro-mechanical device and method of manufacturing the same May 1, 2012
The present invention improves mechanical strength of a micro-electro-mechanical device (MEMS) having a movable portion to improve reliability. In a micro-electro-mechanical device (MEMS) having a movable portion, a portion which has been a hollow portion in the case of a conventiona
8164729 Liquid crystal display device April 24, 2012
It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied
8164726 Antireflection film and display device April 24, 2012
It is an object to provide a high-visibility antireflection film having an antireflection function which can further reduce reflection and a display device that has the antireflection film. A plurality of projections in a pyramidal shape (hereinafter, referred to as pyramidal project
8164718 Liquid crystal display device April 24, 2012
To provide a liquid crystal display device having high visibility and high image quality by relieving color phase irregularity. A light-shielding layer is selectively provided so as to overlap with a contact hole for electrical connection to a source region or a drain region of a thi
8164652 MOS sensor and drive method thereof April 24, 2012
To provide a drive method for finding out an optimum storage period quickly. In the method for driving the MOS sensor having a plurality of pixels, after all the plurality of pixels are simultaneously reset, signals are then sequentially outputted from said plurality of pixels. The p
8164557 Liquid crystal display device and method for driving the same April 24, 2012
In the case of conducting an overdriving with a liquid crystal display device, the circuit for comparing the previous and present gray-scale data, the circuit for converting the gray-scale data upon the comparison result, and the like complicate the structure of the liquid crystal di
8164548 Signal line driver circuit and light emitting device and driving method therefor April 24, 2012
The variation of characteristics of transistors occurs. The present invention is a signal line drive circuit having a plurality of current source circuit corresponding to a plurality of wirings, a first and a second shift registers, a latch circuit, the foregoing plurality of current
8164547 Semiconductor device, display device, and electronic device April 24, 2012
A pixel includes a load, a transistor which controls a current supplied to the load, a storage capacitor, and first to fourth switches. By inputting a potential in accordance with a video signal into the pixel after the threshold voltage of the transistor is held in the storage capac
8164245 Plasma display panel and field emission display having anti-reflection layer comprising pyramida April 24, 2012
It is an object to provide a plasma display and a field emission display that each have high visibility and an anti-reflection function that can further reduce reflection of incident light from external. Reflection of light can be prevented by having an anti-reflection layer that geo
8164099 Display device and manufacturing method thereof April 24, 2012
A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an orga
8164098 Semiconductor element, organic transistor, light-emitting device, and electronic device April 24, 2012
It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an
8164095 Semiconductor device wherein a property of a first semiconductor layer is different from a prope April 24, 2012
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate transistor which includes a semiconductor layer of amorphous silicon (microcrystalline s
8163628 Method for manufacturing semiconductor substrate April 24, 2012
A method for manufacturing a semiconductor substrate is provided, which includes a step of forming a buffer layer over a first semiconductor substrate, a step of forming a damaged region in the first semiconductor substrate by irradiating the first semiconductor substrate with ions, a
8159478 Display device and electronic device using the same April 17, 2012
According to the invention, a compact and inexpensive with low power consumption memory and low access speed can be used for a panel controller and a deterioration compensation circuit of a display device. In a display device of a digital gray scale method, a plurality of pixels of a
8159449 Display device having light-emitting element and liquid crystal element and method for driving t April 17, 2012
It is an object to provide a display device in which a problem of light leakage from a liquid crystal element in black display is reduced or overcome and the contrast is improved. It is another object to provide a pixel circuit having a function to control a lighting state of a backl
8159267 Semiconductor device, display device, and electronic device April 17, 2012
To provide a semiconductor device which operates stably with few malfunctions due to noise, with low power consumption, and little variation in characteristics; a display device including the semiconductor device; and an electronic device including the display device. An output termi
8159088 Display device and portable terminal April 17, 2012
In order to increase the continuous operating time of a display device driven by a battery or the like, and a portable information terminal using the same, the volume and weight of the battery are increased. Thus, there arises a trade-off between the increased capacity of the battery
8159043 Semiconductor device April 17, 2012
A semiconductor device such as an ID chip of the present invention includes an integrated circuit using a semiconductor element formed by using a thin semiconductor film, and an antenna connected to the integrated circuit. It is preferable that the antenna is formed integrally with t
8158991 Light-emitting element, light-emitting device, electronic device, and lighting device April 17, 2012
Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer between an anode and a
8158980 Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capac April 17, 2012
In a CMOS circuit formed on a substrate 100, a subordinate gate wiring line (a first wiring line) 102a and main gate wiring line (a second wiring line) 113a are provided in an n-channel TFT. The LDD regions 107a and 107b overlap the first wiring line 102a and not overlap the second w
8158975 Semiconductor device and manufacturing method thereof April 17, 2012
Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin fil
8158517 Method for manufacturing wiring substrate, thin film transistor, display device and television d April 17, 2012
An object of the present invention is to provide a method for manufacturing a display device by improving the utilization efficiency of materials and simplifying manufacturing process. Another object of the invention is to provide a technique for forming a pattern such as a wiring ha
8158491 IC card and booking-account system using the IC card April 17, 2012
It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a p
8158464 Method of manufacturing a liquid crystal display device with a semiconductor film including zinc April 17, 2012
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconduc
8155305 Electronic device having pixels displaying an image and pixels displaying an operation key April 10, 2012
An easy to use electronic device is provided. The electronic device functions as a telephone and has a display portion, an audio input portion, an audio output portion, and operation keys. The display portion has a passive element, and the operation keys have LEDs. The direction of a
8154697 Liquid crystal display and method of driving same April 10, 2012
There is disclosed a lightweight and small liquid crystal display which achieves low power consumption and in which the optical anisotropy of the liquid crystal material is compensated for in order to enhance the viewing angle characteristics and the response speed of the liquid crys
8154676 Active matrix liquid crystal display device April 10, 2012
An conductive coating serves as a light shield film and is kept at a give voltage. A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulati
8154541 Display device, driving method thereof and electronic appliance April 10, 2012
A display device is provided where fluctuation of current values of a light-emitting element caused by the ambient temperature change and degradation with time is suppressed. According to the invention, a monitoring element driven with a constant current is provided. After detecting
8154480 Photoelectric conversion device and electronic device having the same April 10, 2012
A plurality of transistors in which ratios of a channel length L to a channel width W, .alpha.=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion
8154189 Display device and manufacturing method of the same April 10, 2012
In a display device with a pixel constituted using an EL element or the like, leak light from a monitoring element that is provided for correcting changes in the properties of the element due to the temperature change, deterioration, or the like is effectively suppressed. The display
8154136 Method of fabricating semiconductor device April 10, 2012
Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the un
8154096 Photoelectric conversion element and manufacturing method of photoelectric conversion element April 10, 2012
An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of larg
8154015 Light-emitting device including thin film transistor April 10, 2012
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly highe
8153954 Photoelectric conversion device and electronic device having the same April 10, 2012
To output a digital signal corresponding to illuminance without being adversely affected by circuit delay. A photoelectric conversion device includes a photoelectric conversion element; a ramp-wave output circuit; a first comparator for comparing the ramp-wave signal and a first pote
8153511 Method for manufacturing semiconductor device April 10, 2012
It is an object to improve a yield of a step of cutting off a substrate. A substrate is cut off by using an ablation process. An ablation process uses a phenomenon in which a molecular bond in a portion irradiated with a laser beam, that is, a portion which absorbs the laser beam is cut
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