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Samsung Electronis Co., Ltd. Patents |
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Assignee: Samsung Electronis Co., Ltd.
Address: Suwon-Si, KR
No. of patents: 4
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7217642 |
Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask |
May 15, 2007 |
| A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while be |
| 7170794 |
Programming method of a non-volatile memory device having a charge storage layer between a gate |
January 30, 2007 |
| A programming method of a non-volatile memory device includes a pre-program of the non-volatile memory device, and a main-program of the pre-programmed non-volatile memory device. The non-volatile memory device may include a tunnel dielectric layer, a charge storage layer, a blocking |
| 7072214 |
NOR flash memory device and method of shortening a program time |
July 4, 2006 |
| A NOR flash memory device is capable of shortening a program time. Included is a cell array segmented into a plurality of banks, a data input buffer to receive and store data composed of units of words, the number of units corresponding to the number of banks, and a program driver to |
| 5844421 |
Probe control method for leveling probe pins for a probe test sequence |
December 1, 1998 |
| A probe control method of a probe station which levels the probe pins before testing a large area substrate such as a thin film transistor circuit substrate using a probe station, which includes the steps of connecting a pin of a probe station to a resistance material; measuring and |
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