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STMicroelectronics, SRL Patents
Assignee:
STMicroelectronics, SRL
Address:
Agrate Brianza, IT
No. of patents:
1749
Patents:




Patent Number Title Of Patent Date Issued
RE38657 Current limitation programmable circuit for smart power actuators November 23, 2004
A circuit for limitation of maximum current delivered by a power transistor comprises: a network for detection of the current delivered by the power transistor which generates a first electrical signal; a reference network for generating a reference current proportional to a resistor and
RE38510 Manufacturing process for a monolithic semiconductor device comprising at least one transistor o May 4, 2004
The device uses the horizontal insulating region and the buried layer as the power transistor base and emitter respectively. An epitaxial growth is interposed between the two diffusions needed to form the aforesaid regions and those needed to create the base and the emitter of the transi
RE38387 Multiplier circuit for multiplication operation between binary and twos complement numbers January 13, 2004
A multiplier circuit which multiplies together both natural and two's complement binary numbers, which it receives in the form of electric signals having predetermined logic values, that are applied to input terminals of logic gating circuits. The logic gating circuits provide partia
RE38166 Circuit and method for reading a memory cell that can store multiple bits of data July 1, 2003
A sensing circuit for serial dichotomic sensing of multiple-level memory cells which can take one programming level among a plurality of m=2.sup.n (n>=2) different programming levels, comprises biasing means for biasing a memory cell to be sensed in a predetermined condition, so that
RE38154 Method and circuit for detecting a fault in a clock signal for microprocessor electronic devices June 24, 2003
An electronic device including a microprocessor, a circuit generating a clock signal, and memories of both the volatile type and the non-volatile type, incorporates a circuit for generation of a reset signal capable of detecting a stop in the oscillation of said clock signal and generati
RE37898 Self-oscillating switching power supply with output voltage regulated from the primary side November 5, 2002
Regulation of the output voltage of a power supply employing a flyback-type self-oscillating DC--DC converter employing a transformer. The primary winding circuit of the transformer senses a current recirculation loop for discharging the energy cyclically stored in an auxiliary winding o
RE37707 Leadframe with heat dissipator connected to S-shaped fingers May 21, 2002
An improved leadframe for packages of integrated power devices which, by virtue of its configuration, allows to press the dissipator on the bottom of the shell during the molding of the plastic case, without the dissipator having exposed portions of its inner face (which is in contact
RE37440 Memory for programmable digital filter November 6, 2001
The filter includes an arithmetical chain of parallel adders alternated with delay elements, and a memory constituted by lines of one-bit cells. Each line is addressable by a decoder controlled by a digital signal to be filtered; each line of memory contains side by side values which
RE37416 Method for manufacturing a modular semiconductor power device October 23, 2001
The components used in the method comprise a heat-dissipating base plate, one or more three-layer plates (the top layer consisting of copper plates and strips) and a one-piece frame designed to constitute the terminals. After the chips have been soldered onto the upper plates and connect
RE37308 EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit August 7, 2001
The cell is formed of a selection transistor, a detection transistor and a tunnel condenser. The detection Transistor has its own control gate formed with an n.sup.+ diffusion which is closed and isolated from those of the other cells of the same memory.
RE36998 Circuit for limiting the output voltage of a power transistor December 26, 2000
A circuit for limiting the output voltage from a power transistor connected in series with a resonant load between a voltage supply and a voltage reference, ground, is disclosed. The circuit includes a semiconductor junction element, in particular a diode of the SCR type, having an anode
RE36026 Programmable device for storing digital video lines January 5, 1999
A programmable device for storing digital video lines, being of a type intended for use in TV sets with digital frame scan features whereby a video line is sample coded in a digital signal, comprises at least one pair of memories each adapted to contain the code of one video line, and a
7620186 Method for establishing an encrypted communication by means of keys November 17, 2009
A method of establishing an encrypted communication by using keys between a first electronic device associated with a first trusted authority and a second electronic device, including generating a first secret key associated with the first device for the management of the communication,
7619598 Driver for an OLED passive-matrix display November 17, 2009
An OLED (organic light-emitting diode) passive-matrix display includes a display portion and a driver portion. The display portion includes a matrix of OLEDs for displaying information. The driver portion includes a monitor circuit and a voltage adjusting circuit. The voltage adjusting
7618840 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication November 17, 2009
A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material s
7617494 Process for running programs with selectable instruction length processors and corresponding pro November 10, 2009
The program to be executed is compiled by translating it into native instructions of the instruction-set architecture of the processor system, organizing the instructions deriving from the translation of the program into respective bundles in an order of successive bundles, each bundle
7617407 Method and system for power consumption management, and corresponding computer program product November 10, 2009
A system for reducing power consumption in processing apparatus including a memory comprises a clock controller for controlling the clock period of the processing apparatus to switch the processing apparatus to a slow operating mode wherein the clock period is longer then the time requir
7616825 Method for compression of image data and corresponding apparatus and computer-program product November 10, 2009
A method for compression includes applying a discrete cosine transform to said image data to obtain transform coefficients, quantizing the transform coefficients by applying a quantization level scaled through a gain value, adjusting the gain value as a function of desired image para
7616451 Semiconductor package substrate and method, in particular for MEMS devices November 10, 2009
A semiconductor package substrate suitable for supporting a damage-sensitive device, including a substrate core having a first and opposite surface; at least one pair of metal layers covering the first and opposite surfaces of the package substrate core, which define first and opposi
7616078 Device for controlling the frequency of resonance of an oscillating micro-electromechanical syst November 10, 2009
A device for controlling the frequency of resonance of an oscillating micro-electromechanical system includes: a microstructure, having a first body and a second body, which is capacitively coupled to the first body and elastically oscillatable with respect thereto at a calibratable
7611933 Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the November 3, 2009
A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming
7609237 Circuit apparatus with LED diodes October 27, 2009
A circuit apparatus with LED diodes includes a plurality of circuit branches in which each circuit branch comprises at least one LED diode. The apparatus comprises a device for the supply of said plurality of circuit branches and each circuit branch is connected singularly to the sup
7609036 Control device for a switching converter and related switching converter October 27, 2009
A control device for a switching converter having an input terminal, an output terminal, a semi-bridge of a first and second transistor coupled between the input terminal and a reference voltage, includes a first circuit for driving the first transistor and a second circuit for driving
7606056 Process for manufacturing a phase change memory array in Cu-damascene technology and phase chang October 20, 2009
A process for manufacturing a phase change memory array includes the steps of: forming a plurality of phase change memory cells in an array region of a semiconductor wafer, the phase change memory cells arranged in rows and columns according to a row direction and to a column direction,
7605637 Voltage multiplier and relative operating method October 20, 2009
A voltage multiplier includes a control circuit that generates first and second signals in phase opposition and a charging section. The latter comprises a first capacitor having a first terminal coupled to the first signal and a second capacitor having a first terminal coupled with the
7605476 Stacked die semiconductor package October 20, 2009
A stacked die semiconductor package includes: a substrate, having a first surface and an opposite surface thereto; a plurality of dice, structured for being stacked one on top of the other on the first surface of the substrate, including at least a first die which is mounted closest to t
7605066 Method for realizing an electric linkage in a semiconductor electronic device between a nanometr October 20, 2009
A method realizes an electric connection between a nanometric circuit and standard electronic components. The method includes: providing, above a semiconductor substrate, a seed having a notched wall substantially perpendicular to the substrate, the wall having n recesses spaced apart
7605015 Process for the singulation of integrated devices in thin semiconductor chips October 20, 2009
A process for the fabrication of an integrated device in a semiconductor chip envisages: forming a semiconductor layer partially suspended above a semiconductor substrate and constrained to the substrate by temporary anchorages; dividing the layer into a plurality of portions laterally
7602250 Low noise AC differential amplifier with reduced low corner frequency and current consumption October 13, 2009
An integrated amplifier may include a transconductance stage including a differential pair of input transistors of a first type of conductivity, respective resistive loads coupled to said input transistors, and a first bias circuit coupled to the input transistors. The first bias circuit
7602230 Control integrated circuit for a charge pump October 13, 2009
An integrated control circuit for a charge pump includes a first device for regulating the output voltage of the charge pump and a second device for increasing the output voltage from the charge pump with a set ramp. The integrated circuit includes means for activating said first device
7602225 Power on reset circuit for a digital device including an on-chip voltage down converter October 13, 2009
A power on reset circuit initializes at power on a digital integrated circuit, and includes a first power on reset signal generator powered by an external power supply voltage and generates a first power on reset signal. A reference voltage generator is powered by the external power
7601610 Method for manufacturing a high integration density power MOS device October 13, 2009
A process for the realization of a high integration density power MOS device includes the following steps of: providing a doped semiconductor substrate with a first type of conductivity; forming, on the substrate, a semiconductor layer with lower conductivity; forming, on the semicon
7598116 Organic thin film transistor and process for manufacturing same October 6, 2009
A process for manufacturing an organic thin film transistor includes the steps of arranging a shaping element having a first profile defining a slot, forming a mold suitable to define a cavity with the shaping element, depositing source and drain layers, an active material layer and
7595648 Device and method for reading a capacitive sensor, in particular of a micro-electromechanical ty September 29, 2009
A read device of a capacitive sensor includes: a signal source supplying an electrical read signal for driving the capacitive sensor; and a discrete-time sense circuit for generating an electrical output signal, correlated to variations of capacitance of the capacitive sensor, in res
7595625 Current mirror September 29, 2009
A current mirror includes at least a first and a second mirror transistors inserted between a first and a second voltage reference and connected to an input terminal and to an output terminal of the current mirror, respectively. The current mirror further includes a base current comp
7595223 Process for bonding and electrically connecting microsystems integrated in several distinct subs September 29, 2009
A process for bonding two distinct substrates that integrate microsystems, including the steps of forming micro-integrated devices in at least one of two substrates using micro-electronic processing techniques and bonding the substrates. Bonding is performed by forming on a first sub
7593358 Transmission device for remote control systems September 22, 2009
Transmitter device including a modulator apparatus for the generation of a modulated digital signal in a remote control system. The modulated signal is defined by at least one characteristic quantity correlated to an information to transmit. The modulator apparatus is characterized by
7592849 Level shifter for semiconductor memory device implemented with low-voltage transistors September 22, 2009
A level shifter is proposed. The level shifter includes a stage having a first branch and a second branch, each branch including: a selection terminal for receiving a selection signal, the selection signal received by the first branch and the second branch being alternatively at a first
7592838 Method for communicating data and clock signals and corresponding signal, transmitter and receiv September 22, 2009
A clock signal constituted by pulses with given frequency of repetition and a data signal is able to assume two logic levels are transmitted simultaneously on a two-wire line in the form of a bipolar differential pulse signal with frequency of repetition of the pulses equal to the fr
7592788 Control device of a switching converter with overcurrent protection circuit and related switchin September 22, 2009
A control device of a switching converter having an input terminal, an output terminal and a semi-bridge of a first and second transistor coupled between the input terminal and a reference voltage, includes a first circuit for detecting a signal representative of the signal on the co
7590326 Optical integrated device manufacturing process and device manufactured by the process thereof September 15, 2009
The invention relates to a process for manufacturing an integrated optical device comprising the deposition on a support substrate of a multilayer being formed by first and second cladding layers in order to hold in a multilayer first region a waveguide core layer. The core is provided w
7587280 Genomic data mining using clustering logic and filtering criteria September 8, 2009
A method for automatic analysis of genomic information in order to determine relationships among genes allows one to determine complex relationships among genes. First a clustering algorithm is chosen and is applied to the table, obtaining sub-tables of data relative to groups of gen
7586979 Method for transmitting signals using antenna diversity, for instance in mobile communication sy September 8, 2009
Encoded digital symbols are transmitted via a first pair of antennas and at least one second pair of antennas. The sets of symbols used for the transmission via the second pair of antennas are re-ordered temporally into subsets of symbols with respect to the symbols used for the first
7586943 Method and device for transmitting data on a single line, in particular for transmitting data on September 8, 2009
Described herein is a method for transmitting data on a bus with minimization of the bus switching activity, comprising the steps of converting the datum to be transmitted from its own original format to a transmission format that minimizes the switching activity on the bus, said con
7585743 Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devic September 8, 2009
A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semic
7583132 Charge pump circuit September 1, 2009
A latch-type charge pump circuit is provided having first and second charge pump stages interconnected by an intermediate circuit node. The charge pump circuit includes first pump capacitors respectively coupled between first and second enable terminals and respective first inner cir
7583122 Receiver of digital signals having a variable hysteresis, in particular for audio digital applic September 1, 2009
Embodiments of the invention relate to a signal receiver inserted between a first and a second voltage reference and having a first and a second input terminal effective to receive differential signals and an output terminal effective to provide a converted signal.Advantageously, the
7582892 Optically controlled switching methods based upon the polarization of electromagnetic radiation September 1, 2009
Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected between the first and the second current-conduction terminals, the carbon nanotube being d
7580592 Optical phase shift device and antenna system utilizing same August 25, 2009
A phase shift device of an optical fiber signal includes an actuator for changing the signal phase in at least one fiber portion by inducing the phase change by thermo-optical effect. An antenna system incorporating phase shift devices using the thermo-optical effect find particular
7580589 Filtering of noisy images August 25, 2009
A method for correcting an image from defects and filtering from Gaussian noise corrects each pixel of the image when it is considered defective and filters it from Gaussian noise in one-pass. The one-pass improves the speed for performing the correcting and filtering. The drawbacks

 
 
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