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SGS-Thomson Microelectronics S.A. Patents
Assignee:
SGS-Thomson Microelectronics S.A.
Address:
St. Genis, FR
No. of patents:
744
Patents:


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Patent Number Title Of Patent Date Issued
RE36934 Control device for a hands-free telephone set October 31, 2000
A control device for a hands-free telephone set automatically controls microphone and amplifier gains so that a feedback loop has less than unity gain to avoid circuit instability and resultant self-oscillation. An emission channel includes a microphone, a signal compressor and a con
RE36749 Video signal digital slicing circuit June 27, 2000
An extractor for digital data transmitted at a first determined frequency (f0) through a video channel after a burst of 0s and 1s emitted at a first frequency (f0). A comparator (1) compares the input signal with a threshold level. A threshold level is provided by an up/down counter (12)
RE36356 Electronic component support for memory card and product obtained thereby October 26, 1999
The disclosure relates to memory cards having an electronic component housed in a cavity. The electronic support has a first base made of silicon, with a small thickness (between 50 and 100 microns) and a thicker (between 200 and 300 microns) second base, which is deposited on the first
RE36208 Housing for containing a fragile element such as a logic circuit May 11, 1999
A housing designed to contain a logic circuit (15) comprising two shells (11a, 11b) each including a welding area (17a, 17b) having an appropriate geometry permitting ultrasonic welding, such that when both shells are assembled before a welding phase, they are shifted along a vertical ax
RE36183 System for rearranging sequential data words from an initial order to an arrival order in a pred April 6, 1999
A data shuffler of the pipeline type receives successive trains of n sequential data words and rearranges data words in each train according to a predetermined order. It comprises p (p.ltoreq.n) elementary processing units arranged in series. Each unit comprises an input, an output, a
RE36090 Method and a device for synchronizing a signal February 9, 1999
A device synchronizes an internal signal with respect to a reference signal, each signal comprising pulses normally occurring at a rated frequency. The device uses a phase comparator to analyze the phase of the internal signal and the reference signal and produce one logic state if t
RE35854 Programmable protection circuit and its monolithic manufacturing July 21, 1998
A programmable protection circuit comprises three identical units connected between a common point (C) and a first conductor (A), a second conductor (B) and ground (M). Each unit comprises the anti-parallel arrangement of a thyristor (T) and a diode (D), a bipolar transistor (TR) being c
RE35483 Switching matrix crosspoint March 25, 1997
A crosspoint for a switching matrix constituted by enhanced P-channel and N-channel MOS transistors. Each input line conductor (Ii1 and Ii2) is connected to an input of a first differential amplifier (M3, M4), each leg of which is associated by a current mirror circuit to a first current
RE35385 Method for fixing an electronic component and its contacts to a support December 3, 1996
A method for positioning an electronic component and its contacts on a card is disclosed. The electronic component is first of all placed in the cavity of the card, then the electrical contacts are placed on the card and electrically connected to the output terminals by a so-called tape
RE35365 Squaring circuit for binary numbers October 29, 1996
A squaring circuit for a binary number X of n bits x.sub.0 to x.sub.n-1, includes a table of the squares of numbers p constituted by bits x.sub.1 to x.sub.n-2. An adder for adding numbers of 2n-3 bits receives at a first input a number constituted by bit x.sub.n-1, positioned on the left
RE35305 Amplification circuit with a determined input impedance and various transconductance values July 30, 1996
A voltage-current amplification circuit comprises two sub-circuits (B1, B2), each of which comprises a differential amplifier (D), a resistor (R4), a transistor (T), and a first switch (K1) connected between the transistor base and ground. Each sub-circuit (B1, B2) also comprises an
RE34772 Voltage generator for generating a stable voltage independent of variations in the ambient tempe November 1, 1994
A stable reference voltage generator using a current mirror circuit comprising a primary branch and a secondary branch, is shown and described. A first bipolar transistor (Q1) has its collector connected in series with the primary branch of the current mirror, and a voltage divider b
RE34734 Integrated digital signal processing circuit for performing cosine transformation September 20, 1994
Integrated circuits capable of carrying out transformations of the "cosine transformation" type, used more particularly for the digital processing of images with a view to information compression. The versatile and compact circuit architecture involves dividing a bus into sections separa
7023060 Methods for programming read-only memory cells and associated memories April 4, 2006
A method for programming a read-only memory cell including a transistor whose source and drain, which have a second type of doping, are formed in a semiconductor substrate with a first type of doping, includes a step of carrying out a contradoping in a region of the source, the region be
6984872 Method for fabricating an NPN transistor in a BICMOS technology January 10, 2006
The present invention relates to a bipolar transistor of NPN type implemented in an epitaxial layer within a window defined in a thick oxide layer, including an opening formed substantially at the center of the window, this opening penetrating into the epitaxial layer down to a depth
6943592 Detector of range of supply voltage in an integrated circuit September 13, 2005
The disclosure relates to detectors of the level of supply voltage in an integrated circuit. The disclosed detector is designed to detect the crossing of low levels of supply voltage. It comprises a first arm to define a first reference voltage and a second arm to define a second ref
6934202 Memory circuit with dynamic redundancy August 23, 2005
The present invention relates to an integrated circuit including at least one matrix network of identical elements capable of being individually addressed at least in a first direction and including, at least for this first direction, at least one redundancy element, and a circuit that
6914908 Multitask processing system July 5, 2005
The invention relates to a multitask processing system including a data bus and a command bus. Each one of a plurality of operators is provided to perform a processing determined by an instruction and is likely to issue a command request in order to receive an instruction from the comman
6885174 System for providing a regulated voltage to supply a load April 26, 2005
The present invention relates to a system for providing a regulated voltage meant to supply a load, including a source for providing a substantially constant current approximately corresponding to the maximum current likely to be surged by the load, and a device receiving the constant cu
6781804 Protection of the logic well of a component including an integrated MOS power transistor August 24, 2004
The present invention relates to a structure for ground connection on a component including a vertical MOS power transistor and logic components, the substrate of a first type of conductivity of the component corresponding to the drain of the MOS transistor and the logic components b
6674148 Lateral components in power semiconductor devices January 6, 2004
A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the
6645803 Method for modifying the doping level of a silicon layer November 11, 2003
A method for modifying the doping level of a doped silicon layer including the steps of coating the silicon layer with a silicide layer made of a refractory metal, and heating the interface region between the silicon and the silicide to a predetermined temperature. The method may be appl
6633071 Contact on a P-type region October 14, 2003
The present invention relates to a contacting structure on a lightly-doped P-type region of a semiconductor component, this P-type region being positively biased during the on-state operation of said component, including, on the P region a layer of a platinum silicide, or of a metal
6606609 Apparatus and method for operating an integrated circuit August 12, 2003
An integrated circuit comprising a logic processor and a fuzzy logic coprocessor is disclosed which processes a plurality of analog inputs. The logic processor and fuzzy logic processor are combined in the form of a single integrated circuit. The integrated circuit accepts a plurality of
6584523 Device for organizing the access to a memory bus June 24, 2003
This invention relates to a device for organizing access to a bus connecting a memory to at least two entities asynchronous binary signals representing requests for access to the bus. The device supplies binary signals to authorize the access to an entity based on a priority determin
6580142 Electrical control methods involving semiconductor components June 17, 2003
A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous
6559409 Method for marking integrated circuits with a laser May 6, 2003
A method for physically marking, on silicon wafers, of integrated circuits deemed to be defective during a testing step, so as to modify the visual appearance of the surface of these circuits, wherein the marking is done by the exposure of the circuits to a laser beam. The disclosure als
6525582 Latch operating with a low swing clock signal February 25, 2003
The present invention relates to a latch including two first N-channel transistors connected to a low supply potential and controlled by a clock signal; two second transistors respectively connecting the two first transistors to an inverted output terminal and to a non-inverted output
6525393 Semiconductor substrate having an isolation region February 25, 2003
A method for producing an isolation region on a surface of a semiconductor substrate includes: forming and patterning a masking layer; forming an isolating layer so that a notch exists between an edge of the masking layer and the upper surface of the isolating layer; forming a filling
6523121 Bus system with a reduced number of lines February 18, 2003
In order to reduce the number of lines of a standard bus while, at the same time, preserving the compatibility of the communications protocol, the system uses a modified bus. The modification consists in eliminating two power supply lines and in creating a line assigned to a functional s
6480056 Network of triacs with gates referenced with respect to a common opposite face electrode November 12, 2002
The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor comprised of PNPN regions, and surrounded with a P-type deep diffusion. A P-type well contains
6434056 Set of two memories on the same monolithic integrated circuit August 13, 2002
Two different types of memory are integrated on the same type of integrated circuit. A microcontroller is associated with each of these memories. In order that the independence of operation of these microcontrollers may be ensured, they are each provided with time delay circuits whose ro
6432789 Method of forming a well isolation bipolar transistor August 13, 2002
The present invention relates to an integrated circuit including a lateral well isolation bipolar transistor. A first portion of the upper internal periphery of the insulating well is hollowed and filled with polysilicon having the same conductivity type as the transistor base, to form a
6430720 Functional testing method and circuit including means for implementing said method August 6, 2002
The present invention relates to a method of functional testing of a logic circuit and to an integrated circuit for implementing the method. The method includes providing at least one test pattern and the storage of this test pattern in a first test register, this providing step being
6411155 Power integrated circuit June 25, 2002
A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous
6396934 Analog audio filter for high frequencies May 28, 2002
The present invention relates to an active analog filter including a differential amplifier, an output of which provides a filtered signal and a non-inverting input of which is connected to a median potential between supply potentials of the amplifier, a first series association of a fir
6385599 Method and apparatus for a fuzzy self-adaptive control system May 7, 2002
To resolve a problem of the repairing of an electronic system, a machine will undergo a learning stage during the replacement of a part of the machine. This learning stage can be monitored manually or automatically on a limited range of variation. During this learning stage, readings are
6380847 Control circuit for a vibrating membrane April 30, 2002
The present invention relates to a control circuit of a vibrating membrane excited by a solenoid in series with a d.c. supply and a controlled switch. A capacitor is disposed across a series circuit including the solenoid and the switch associated with opening means in the vicinity of a
6376883 Bipolar transistor and capacitor April 23, 2002
The present invention relates to a method of manufacturing a capacitor in a BICMOS integrated circuit manufacturing technology, including the steps of depositing, on a thick oxide region, a polysilicon layer corresponding to a MOS transistor gate electrode; successively depositing a base
6373672 Static and monolithic current limiter and circuit-breaker component April 16, 2002
The present invention relates to a static and monolithic current limiter and circuit-breaker component including, between two terminals, a one-way conduction current limiter, a sensor of the voltage between the terminals, and a mechanism for inhibiting the conduction of the current limit
6373311 Oscillator and switch-over control circuit for a high-voltage generator April 16, 2002
An oscillator circuit produces first and second oscillating logic signals that are of a same frequency and are non-overlapping in a first logic state. This oscillator includes a flip-flop circuit to produce third and fourth oscillating logic signals of opposite polarities, this flip-flop
6349111 Circuit for allocating a transmission channel on the electric network February 19, 2002
The present invention relates to a circuit for allocating a channel to a transmission between at least two modems that use an electric network as a medium for the transmission of a binary data flow. The circuit includes, on the receive side, a device for selecting a channel that is selec
6347308 Method for the processing of information by fuzzy logic February 12, 2002
In a system of information processing by fuzzy logic, force coefficients are associated with values of variables processed by a fuzzy logic processor. The force coefficients show the degree of urgency with which information sent has to be taken into consideration or indicating the im
6321324 Device for putting an integrated circuit into operation November 20, 2001
To enable the putting into use of a monolithic integrated circuit comprising a processor and a fuzzy logic coprocessor, both having a single program memory in common, an operation is effected by which, at the time of the initializing of the integrated circuit, a volatile, random-access
6294901 Power dimmer September 25, 2001
The present invention relates to a power dimmer of a load, powered by an a.c. voltage, of the type including a bidirectional switch associated in series with the load, the switch being normally closed and controllable to be opened upon each halfwave of the a.c. voltage.
6281723 Device and method for power-on/power-off checking of an integrated circuit August 28, 2001
A checking device to control the power-on or power-off operations in an integrated circuit comprises a voltage reference circuit biased by a bias circuit, and an output stage. The device further comprises a control circuit to activate or deactivate the bias circuit as a function of the
6281722 Bias source control circuit August 28, 2001
The invention relates to a control circuit for a bias source including a stand-by device and a starting-aid device, with their respective outputs connected to a control input of the bias source, the starting-aid device including a switch to inhibit its operation, controlled by the bias
6279068 Set of two memories on the same monolithic integrated circuit August 21, 2001
Two different types of memory are integrated on the same type of integrated circuit. A microcontroller is associated with each of these memories. In order that the independence of operation of these microcontrollers may be ensured, they are each provided with time delay circuits whose ro
6278868 Transceiver circuit including a circuit for measuring the delay introduced by telephone lines August 21, 2001
The present invention relates to a master transceiver circuit meant to be coupled by a telephone line to a slave transceiver circuit, the master circuit including a digital phase-locked loop for reconstructing a clock from an incoming bit flow, the phase difference between the reconstruc
6265277 Method for making a bipolar transistor for the protection of an integrated circuit against elect July 24, 2001
In a method for the making of a lateral bipolar transistor, the formation of a field oxide layer on the surface of the substrate, between the collector and the emitter of the protection transistor, is avoided. The lateral bipolar transistors made by the disclosed method are advantage
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