| Patent Number |
Title Of Patent |
Date Issued |
| 4752702 |
Bootstrap pilot circuit in N-MOS technology for capacitive loads |
June 21, 1988 |
| A bootstrap condenser connected to the output of the circuit is preloaded during the low output state when the load transistor is off and the drive transistor is normally on. A commutation signal brings about extinction of the drive transistor and connection of the condenser to the gate |
| 4749956 |
Fully-differential operational amplifier for MOS integrated circuits |
June 7, 1988 |
| A single-stage fully differential operational amplifier has a high open-loop gain and can be incorporated in a very small area of silicon and has a very small number of bias interconnection lines. The amplifier includes two identical arms each having similar bias and loads, transcond |
| 4746871 |
Differential switched capacitor integrator using a single integration capacitor |
May 24, 1988 |
| A differential switched capacitor type integrator, particularly useful for building analog sampled-data switched capacitor filters, utilizes a single integration capacitor (or array of unitary capacitors connected in parallel) instead of the two distinct integration capacitors required i |
| 4740821 |
NPN equivalent structure with breakdown voltage greater than the intrinsic breakdown voltage of |
April 26, 1988 |
| Described is an improved NPN equivalent structure with a breakdown voltage higher than the intrinsic breakdown voltage of the NPN transistor utilizing a complementary PNP transistor and a JFET transistor with the gate connected to ground, the drain connected to the base of the PNP and |
| 4739378 |
Protection of integrated circuits from electric discharge |
April 19, 1988 |
| Described is an integrated semiconductor structure for the protection from electrical discharges of electrostatic origin of particularly sensitive components of an integrated circuit. The structure is almost entirely formed directly underneath a particular input pad thus requiring a mini |
| 4739228 |
Electric circuit for S correction of the vertical scanning ramp in a television apparatus |
April 19, 1988 |
| A variable-gain rectifier-amplifier with regulated voltage converts the output ramp of a ramp generator with regulating resistance of ramp amplitude into a triangular wave form with adjustable linearity which a feedback circuit brings back to said regulating resistance in the form of |
| 4739190 |
Monolithically integratable high efficiency switching circuit |
April 19, 1988 |
| A high efficiency switching circuit, which may be monolithically integrated, includes a power output transistor which is driven to switch by means of a second transistor coupled to its control terminal. Circuit components for charge extraction are connected to the base terminals of b |
| 4733196 |
Current gain stage with low voltage drop |
March 22, 1988 |
| A current gain stage with low voltage drop usable in place of a Darlington's current gain stage is described. This stage maintains the precision characteristics of the output current value, though presenting a lower voltage drop. The stage is formed by connecting the collector of the |
| 4730168 |
CMOS output stage with large voltage swing and with stabilization of the quiescent current |
March 8, 1988 |
| A CMOS output stage with large voltage swing particularly suited for output buffers in monolithic analog subsystems has two, push-pull connected, complementary MOS transistors and has feedback for improving its swing and linearity characteristics in comparison with those of the output st |
| 4727465 |
Drive circuit for N-channel power MOS transistors of push-pull stages |
February 23, 1988 |
| This circuit, for reliably driving a load both in DC and AC mode with a low dissipation, comprises a pair of MOS power transistors, in a push-pull configuration, and a bootstrap circuit including a bootstrap capacitor placed between the source of the upper MOS transistor and a reference |
| 4725810 |
Method of making an implanted resistor, and resistor obtained thereby |
February 16, 1988 |
| This method of making an implanted resistor comprises the steps of implanting the resistor with ordinary techniques and deposition over the implanted resistor of a polysilicon layer having a set thickness and fully covering the resistor. Thus, the resulting resistor is unaffected by any |
| 4725769 |
Current limited for constant current for switching driving devices |
February 16, 1988 |
| The switching driving device with current limitation, operating reliably even with high switching frequencies, comprises a drive stage receiving at the input a timing clock signal at a preset frequency and generating at the output a drive signal synchronized with the timing clock signal, |
| 4721686 |
Manufacturing integrated circuits containing P-channel MOS transistors and bipolar transistors u |
January 26, 1988 |
| This method, requiring a smaller number of masking steps with respect to the known methods, comprises boron implant on the surface of an epitaxial layer, without masking, and arsenic implant in predetermined locations of the epitaxial layer surface by means of an appropriate mask. A subs |
| 4721684 |
Method for forming a buried layer and a collector region in a monolithic semiconductor device |
January 26, 1988 |
| A method for forming a buried layer below the collector region of a transistor of an integrated circuit uses a second doping agent (e.g.--small amounts of phosphorus) in addition to a main doping agent (e.g.--antimony). The use of the second doping agent solves the problem of undesir |
| 4720852 |
Monolithically integratable telephone circuit for generating control signals for displaying the |
January 19, 1988 |
| A telephone circuit which may be monolithically integrated for generating control signals for displaying the telephone charges to a subscriber is coupled to an AC voltage signal generator of having a predetermined amplitude and frequency which are constant over time. The circuit includes |
| 4720641 |
Intelligent electrical power device with monolithic integrated circuit |
January 19, 1988 |
| With a MOS power element is associated at least one CMOS pilot circuit supplied by a condenser charged with a voltage taken from the power circuit during the interdiction phases of the power element. The entire device is preferably enclosed in a single monolithic chip except for the |
| 4719184 |
Process for the fabrication of integrated structures including nonvolatile memory cells with lay |
January 12, 1988 |
| After growth of gate oxide, deposit and separation of a first polycrystalline silicon layer, growth of dielectric oxide and removal thereof from the transistor area, and deposit of a second polycrystalline layer, a single mask makes possible first etching of the second silicon layer |
| 4718977 |
Process for forming semiconductor device having multi-thickness metallization |
January 12, 1988 |
| Structure and method for metallization patterns of different thicknesses on a semiconductor device or integrated circuit. The improved structure and method utilizes three layers of metal in order to reduce the required number of processing steps. One preferred embodiment entails a single |
| 4717887 |
Differential amplifier stage having circuit elements for setting the gain to zero |
January 5, 1988 |
| Differential amplifier stage, having circuit elements for setting the gain to zero, includes a first transistor and a second transistor, whose bases are respectively connected to the positive terminal of a voltage source by a first current generator and a second current generator and are |
| 4716321 |
Low noise, high thermal stability attenuator of the integratable type |
December 29, 1987 |
| A low noise, high thermal stability attenuator of the integratable type is disclosed. The attenuator comprises a fixed network of resistive elements, having a plurality of outputs each at a different attenuation level, and a switched amplifier receiving at its input such different attenu |
| 4714897 |
Monolithically integratable signal amplifier stage with high output dynamics |
December 22, 1987 |
| A monolithically integratable signal amplifier stage with high output dynamics includes first, second, and third bipolar NPN transistors and first and second current mirror circuits. The collector terminal of the first transistor is connected to the positive terminal of a supply voltage |
| 4714895 |
Internal all-differential operational amplifier for CMOS integrated circuits |
December 22, 1987 |
| The amplifier comprises two like CMOS cascode circuits, each having a first and a second transistors with channels having a first plurality and a third and fourth transistors with channels having the opposite polarity, the drain of the first transistor being connected to the source of th |
| 4714845 |
Low offset voltage follower circuit |
December 22, 1987 |
| A low offset voltage follower circuit includes substantially identical first and second N-channel MOS transistors having their source electrodes connected to a negative terminal of a supply voltage source via a third N-channel MOS transistor whose gate electrode is connected to a first |
| 4704738 |
Transistor amplifier and mixer input stage for a radio receiver |
November 3, 1987 |
| The input stage of a radio receiver incudes a differential amplifier circuit, whose gain is adjusted by a voltage generated by an AGC circuit, and a mixer circuit. An attenuator stage with a predetermined attenuation coefficient is coupled between the input terminal of differential circu |
| 4703552 |
Fabricating a CMOS transistor having low threshold voltages using self-aligned silicide polysili |
November 3, 1987 |
| The method provides for the formation of a layer of metal silicide on the gate layer of polycrystalline silicon and, for each transistor of the CMOS pair, the simultaneous doping of the active regions and the gate polycrystalline silicon. In the structure produced by this method, the |
| 4703249 |
Stabilized current generator with single power supply, particularly for MOS integrated circuits |
October 27, 1987 |
| A stabilized generator includes an operational amplifier with capacitive negative feedback whose output signal controls a current regulator which drives the input of a current mirror circuit, the mirrored current from the mirror circuit controlling a feedback circuit adapted to drive the |
| 4701638 |
Antisaturation circuit for integrated PNP transistor |
October 20, 1987 |
| An antisaturation circuit for an integrated PNP transistor, having a generic current generator in the base branch of the bias circuit capable of limiting the maximum base current, comprises two NPN transistors, a diode and a voltage divider formed by two resistors, and permits to limit |
| 4701631 |
Monolithically integrated control circuit for the switching of transistors |
October 20, 1987 |
| A monolithically integrated control circuit for the switching of transistors includes a control circuit coupled to a switching signal source. Signals from the signal source cause control circuit to switch at least one transistor connected thereto. The control circuit includes a curre |
| 4700282 |
Monolithically integratable control circuit having a push-pull output stage for the switching of |
October 13, 1987 |
| A monolithically integratable control circuit for the switching of inductive loads, have a push-pull output stage formed by transistors each having their base terminal connected to a control circuit and to a charge extraction transistor driven to conduct at saturation in phase opposition |
| 4698720 |
Dynamic protection integrated device, in particular for MOS input stages integrated circuits |
October 6, 1987 |
| This dynamic protection device is particularly intended for integrated circuits having input MOS stages and logic or analog inputs fed by voltages and/or currents whose value can increase above those bearable with traditional protection systems. The device is composed of a first sect |
| 4698519 |
Monolithically integratable high-efficiency control circuit for switching transistors |
October 6, 1987 |
| A monolithically integrable high-efficiency control circuit for the switching of transistors includes a first transistor whose base terminal is connected to a source of switching signals. A second transistor whose base is connected to a current generator, drives a third transistor which |
| 4695786 |
Voltage regulator for an alternator having an auxiliary stage for starting the alternator at a l |
September 22, 1987 |
| A voltage regulator for an alternator has an integrated actuator stage consisting of a Darlington transistor pair and includes an auxiliary stage which, at the time of starting of the alternator, causes a low voltage drop across the actuator stage by causing only one of the two transisto |
| 4682197 |
Power transistor with spaced subtransistors having individual collectors |
July 21, 1987 |
| This integrated semiconductor device aims at drastic reduction of the direct secondary breakdown phenomena and has a plurality of side-by-side elementary transistors forming an interdigited structure. To reduce the thermal interaction between the elementary transistors, the latter are |
| 4682120 |
Short circuit protection device for an integrated circuit and a load connected thereto |
July 21, 1987 |
| A short circuit protection device for a unitary voltage gain signal transducer circuit (G.sub.v) and for a load impedance (R.sub.L) coupled to the transducer circuit includes a first (A.sub.1) and a second (A.sub.2) threshold comparator circuit and an actuator circuit (ACT). The input |
| 4677664 |
Method and apparatus for an improved ring trip detection telephone circuit |
June 30, 1987 |
| A telephone circuit for ring trip detection that can be monolithically integrated, includes a current transducer coupled to a user's telephone line, and an integrator circuit. The output current of the current transducer is proportional to the line current until equal and opposite th |
| 4673889 |
Apparatus and method for muting an output signal in a switching amplifier |
June 16, 1987 |
| In an audio switching power amplifier, muting apparatus provided for eliminating noise signals associated with turn-on and turn-off operations of the apparatus is disclosed. The muting apparatus disables the output power amplifiers and controls signal levels at various positions in the |
| 4672332 |
RC oscillator having plural differential threshold stages |
June 9, 1987 |
| This high accuracy, RC oscillator, particularly for monitors, has different switch-over thresholds independent from such variable parameters as the saturating voltage of transistors, and has a high operating frequency. The oscillator comprises a capacitor having an output terminal, a cap |
| 4672235 |
Bipolar power transistor |
June 9, 1987 |
| A power transistor comprising a plurality of elementary transistors coupled in parallel and an identical number of current generators, each of which has a terminal coupled individually to the base of an elementary transistor is described. High power levels may be achieved with a tran |
| 4668907 |
Monolithically integratable current adding circuit |
May 26, 1987 |
| A monolithically integratable current adding circuit includes a current mirror circuit, the input port of which forms a first input terminal of an adding circuit and the output port of which is connected, via two series connected resistors, to a voltage reference. The point of connection |
| 4667393 |
Method for the manufacture of semiconductor devices with planar junctions having a variable char |
May 26, 1987 |
| The invention relates to a method for the manufacture of high voltage semiconductor devices with at least one planar junction with a variable charge concentration.The method consists in doping with impurities of a same type, in a region of monocrystalline semiconductor material, a first |
| 4663647 |
Buried-resistance semiconductor device and fabrication process |
May 5, 1987 |
| A buried-resistance semiconductor device is constructed by forming a P-type monocrystalline silicon substrate on which an epitaxial layer of silicon doped with type N impurities is grown, a portion of the epitaxial layer being insulated by a P-type insulating region extending from the su |
| 4609877 |
Buffer circuit with differential structure for measurement of capacitive charges |
September 2, 1986 |
| In a buffer with an operational amplifier having two inputs and two outputs and two feedback capacitances are inserted two other capacitances which in the measurement stage are switched in parallel to the feedback ones with opposite sign in such a manner as to cancel out the effects on t |
