| Patent Number |
Title Of Patent |
Date Issued |
| D264853 |
Electronic memory credit card with frangible portion |
June 8, 1982 |
|
| 5102828 |
Method for manufacturing a semiconductor card with electrical contacts on both faces |
April 7, 1992 |
| Two superimposed series of electric contacts in the shape of metal-sheet strips, electrically connected to a metallic place which supports a semiconductor chip, are electrically separated but mechanically connected by an interposed layer of adhesive material at high insulation. The whole |
| 5032894 |
Semiconductor card with electrical contacts on both faces |
July 16, 1991 |
| Two superimposed series of electric contacts in the shape of metal-sheet strips, electrically connected to a metallic plate which supports a semiconductor chip, are electrically separated but mechanically connected by an interposed layer of insulating adhesive material. The whole is |
| 4881117 |
Semiconductor power device formed of a multiplicity of identical parallel-connected elements |
November 14, 1989 |
| A multiplicity of semiconductor chips constituting the active elements of a semiconductor power device are attached, in a predetermined configuration, to a metal plate which acts as both a support and a first electrical terminal. Two other electrical terminals are formed by two metal |
| 4800416 |
Bipolar power transistor having bypassable incorporated-base ballast resistance |
January 24, 1989 |
| The ballast resistance of the base of a bipolar power transistor is realized by a localized pinching of the base region by means of a special diffused region. A surface metallization brings the diffused region into contact with the adjacent base region so that a diode is formed in pa |
| 4712127 |
High reliability metal and resin container for a semiconductor device |
December 8, 1987 |
| A container for a semiconductor device has a metal plate and a body of synthetic resin which encapsulates a part of the plate, keeping a large surface thereof exposed. In the area separating the part encapsulated within the body of resin and the part without the resin, the plate has two |
| 4647839 |
High precision voltage-to-current converter, particularly for low supply voltages |
March 3, 1987 |
| The common terminals of the two opposite transistors of a differential stage with an input signal represented by the voltage applied between the bases of the two transistors are connected to ground through two further transistors controlled by the current which passes through the abo |
| 4647791 |
Generator for producing multiple signals which are synchronous with each other |
March 3, 1987 |
| A voltage comparator with several parallel output channels connected to respective threshold circuits is responsive to the increase of the charge voltage of a capacitor with a linear variation of output currents in the channels. The different output currents, equal or different to each o |
| 4638507 |
Audio amplifier switch-on control circuit |
January 20, 1987 |
| A capacitor which is progressively chargeable in response to a switching on of the equipment, however brought about, is associated with an oscillating circuit with intervention threshold. As the load voltage of said capacitor increases the oscillating circuit shifts from a first to a sec |
| 4638465 |
Integrated structure microcomputer provided with non-volatile RAM memory |
January 20, 1987 |
| An integrated structure composed of a processing unit (CPU), ROM memory, RAM memory and other optional functions, such as input/output etc., is arranged as a microcomputer, in which all or part of the RAM is a non-volatile memory which carries out during normal operation all the func |
| 4638122 |
Monolithically integratable telephone circuit for generating control signals for displaying tele |
January 20, 1987 |
| A telephone circuit which may be monolithically integrated, for generating control signals for displaying the telephone charges to a telephone user, is coupled to a AC voltage signal generator having a predetermined amplitude and frequency which are constant over time. The circuit includ |
| 4634991 |
Ratio discriminator |
January 6, 1987 |
| A ratio discriminator is disclosed which can provide an exact indication of the achievement of tuning and is unaffected by drifts and variations in the components or supply or reference voltages. The discriminator includes a modulated signal input, an intermediate frequency circuit compr |
| 4631561 |
Semiconductor overvoltage suppressor with accurately determined striking potential |
December 23, 1986 |
| A semiconductor suppressor device consists of a structure including a P-type substrate, an N-type epitaxial layer, a first P-type diffusion region in the epitaxial layer, and a second N-type diffusion region in the first region. A first metallic layer which is in contact with the sub |
| 4631485 |
Synchronous demodulator for amplitude modulated signals |
December 23, 1986 |
| Two circuits carry out the beating of a modulated signal, with first and second signals, respectively, each having substantially the same frequency as the carrier of the modulated signal but phased-shifted relative to one another by 90.degree.. A commutator controlled by a control circui |
| 4623950 |
Protective device for a power element of an integrated circuit |
November 18, 1986 |
| A protective device for a power element of an integrated circuit includes a circuit element for detecting and processing the value of the current flowing through the power element and the voltage supplied to the power element. The circuit element generates a measuring signal which, when |
| 4615478 |
Method for the soldering of semiconductor chips on supports of not-noble metal |
October 7, 1986 |
| After the support of not-noble metal has suitably been heated and before and during the application of a tablet of soldering material destined to receive the semiconductor chip, the soldering area is engaged by a reducing gas flame (for example, 20% hydrogen and 80% nitrogen at a tem |
| 4614962 |
Controlled electronic switching device for the suppression of transients |
September 30, 1986 |
| This controlled electronic switching device for the suppression of transients can change over from a non-conductive state to a conductive state at lower triggering current levels than conventional devices while retaining unaltered its response characteristics to variations in the vol |
| 4612452 |
Control circuit for the switching of inductive loads having a push-pull output stage |
September 16, 1986 |
| A control circuit for the switching of inductive loads which is monolithically integratable and includes an output stage having push-pull transistors. The base of each transistor of the output stage is connected to a driver circuit and to an auxiliary transistor which is biased in sa |
| 4611162 |
Parallel voltage regulators with different operating characteristics collectively forming a sing |
September 9, 1986 |
| A monolithic integrated voltage regulator consists of a multiplicity of regulator circuits connected in parallel to one another. These circuits have different dropouts and the voltage established across each set of output terminals is held at a predetermined constant value by means of a |
| 4609999 |
RAM memory cell with electrically programmable non-volatile memory element |
September 2, 1986 |
| The cell is realized according to a bistable structure which includes a non-volatile memory element. During the normal operation the structure operates as a static RAM cell with the non-volatile element excluded from the circuit. In case of turn-off of the supply line or after suitable |
| 4595846 |
Electronic circuit for amplitude variation and level displacement of a signal |
June 17, 1986 |
| A first circuit branch subjected to an input voltage and including a first resistance and a second circuit branch subjected to a reference voltage and including a second resistance are connected to a coupling circuit, which is responsive to the current circulating in the first branch to |
| 4587441 |
Interface circuit for signal generators with two non-overlapping phases |
May 6, 1986 |
| An interface circuit with MOS-type transistors for timing signal generators with two non-overlapping phases made up of two identical twin circuits, each having a final stage of the type including two transistors connected in series between the two terminals of a supply voltage generator |
| 4575686 |
Output stage for power amplifiers |
March 11, 1986 |
| The output stage for power amplifiers, in particular of the minimum drop, low tension type, is intended for use with apparatus which do not require a high output current, which output stage can operate at a lower minimum voltage supply than comparable known stages. The output stage compr |
| 4570198 |
Low voltage alternator having short circuit protection |
February 11, 1986 |
| In case of short circuit the overcurrent which passes through a detecting resistance in series with the excitation winding of the alternator operates a threshold current generator, which reduces the voltage of the central node of a voltage divider. A trigger interposed between said c |
| 4568407 |
Equipment for coating and flush cutting of a protective plastics film of silicon slices for fina |
February 4, 1986 |
| An equipment for coating and flush cutting of a protective plastics film of silicon slices for final lapping comprises a plate provided with a plurality of seats, each of which intended to exactly contain a slice, a carriage movable along said plate and carrying a roll of said plastics |
| 4563632 |
Monolithically integratable constant-current generating circuit with low supply voltage |
January 7, 1986 |
| A monolithically integratable constant-current generating circuit includes a current-generating circuit having a control terminal and two output terminals, from which currents flow that are bound by a constant proportionality ratio.There is connected to one output terminal the input bran |
| 4555674 |
Power audio-amplifier with automatic adjustment of the bias current absorbed by the final stage |
November 26, 1985 |
| A current control circuit coupled to the final stage of the amplifier automatically adjusts the bias current of the final stage so that it is low in the no-load state and higher in the load state. The low no-load value avoids useless energy leakages and heat dissipations, while the h |
| 4555644 |
Output interface for a three-state logic circuit in an integrated circuit using MOS transistors |
November 26, 1985 |
| An output interface which includes a capacitor which is charged to a relatively high voltage by a voltage source which may have a high internal impedance, and a switching circuit which is controlled by an output of the associated logic circuit and which connects the capacitor with a gate |
| 4553046 |
Monolithically integratable bistable multivibrator circuit having at least one output that can b |
November 12, 1985 |
| A bistable multivibrator circuit includes two main transistors and two other transistors and an additional pair of transistors. The multivibrator circuit can be monolithically integrated and has an output that can be placed in a preferential state. The two other transistors are utilized |
| 4549095 |
Control circuit for switching inductive loads |
October 22, 1985 |
| A control circuit for switching inductive loads which can be monolithically integrated and used in high-speed printing equipment and in chopper power supply systems. The circuit includes a final power transistor, driven for switching by means of a drive transistor coupled to its control |
| 4517226 |
Metallization process of a wafer back |
May 14, 1985 |
| On the back of a wafer there are deposited firstly a gold layer and then an aluminium layer (eventually including a small silicon percent). It is finally carried out a thermic treatment at low temperature, which causes the aluminium migration towards the wafer through the gold layer. |
| 4507525 |
Transistorized bridge rectifier circuit with overcurrent protection for use in telephones |
March 26, 1985 |
| A transistorized bridge rectifier circuit with overcurrent protection which can be integrated monolithically is used for joining to a two-wire telephone line to the electronic circuits of a telephone subscriber set connected thereto. The circuit includes a transistorized bridge having a |
| 4502016 |
Final bridge stage for a receiver audio amplifier |
February 26, 1985 |
| A final bridge stage for a receiver audio amplifier, which can be monolithically integrated, consists of two pairs of complementary bipolar transistors. The collectors of the transistors of each of the transistor pairs are connected together to form two terminals to which a transducer |
| 4501933 |
Transistor bridge voltage rectifier circuit |
February 26, 1985 |
| A transistor bridge rectifier circuit, which is capable of being monolithically integrated, is designed to connect the electronic circuits in a user's telephone set to a two-wire telephone line. The circuit includes a transistor bridge with a "Graetz bridge" circuit arrangement, a cu |
| 4488931 |
Process for the self-alignment of a double polycrystalline silicon layer in an integrated circui |
December 18, 1984 |
| On a substrate of monocrystalline silicon there are formed, one after another, a first oxide layer, a first polycrystalline silicon layer, a second intermediate oxide layer and a second polycrystalline silicon layer which is thicker than the first. In the second polycrystalline silicon |
| 4480337 |
Transistor mixer and amplifier input stage |
October 30, 1984 |
| A transistor mixer and amplifier input stage which includes a mixer and a differential amplifier whose gain is controlled by a voltage generated by an AGC circuit. Two transistors, each having a resistor connected in series with its emitter, are connected between the inputs of the di |
| 4468852 |
Process for making CMOS field-effect transistors with self-aligned guard rings utilizing special |
September 4, 1984 |
| Two patches of silicon nitride are formed above spaced-apart regions of an n-type substrate (2) on an overlying oxide layer (8) of small thickness. Arsenic ions are then implanted through the oxide layer in substrate areas not covered by the patches whereupon one patch (10a) and an adjoi |
| 4455585 |
Car alternator electric power generator protected against transients due to battery disconnectio |
June 19, 1984 |
| An electric power generator which includes a component, for example, a Zener diode, connected in series with the usual return diode which is connected in parallel to the excitation winding of the alternator. The Zener diode makes it possible to set the discharging voltage due to the |
| 4417292 |
Power amplifier protection circuit |
November 22, 1983 |
| A protective current mirror, with a reflection ratio greater than one, is connected as the active load of an input differential amplifier of a power amplifier. This mirror is provided in addition to the usual current mirror which has its output connected to the drive transistor of the ou |
| 4412311 |
Storage cell for nonvolatile electrically alterable memory |
October 25, 1983 |
| A storage cell of a nonvolatile electrically alterable MOS memory (EAROM) comprises a p-type silicon substrate with n-doped drain and source areas interlinked by an n-channel which is partly overlain by a floating gate extending over part of the drain area. An accessible gate overlaps th |
| 4369380 |
Circuit for controlling a transistor static switch for d.c. loads with high turn-on current |
January 18, 1983 |
| A control circuit provides current to the bases of two transistors connected in a Darlington configuration. A load in series with the Darlington collector receives the turn-on current given the improved current gain of this configuration. A diode connected between the Darlington inpu |
| 4368436 |
Overload protection device for power output circuits |
January 11, 1983 |
| A protection device for a power output circuit, designed such that the device protects the power output circuit from damage due to output overloads and simultaneously eliminates the power dissipation of the protected device, thereby conserving power and eliminating unnecessary heatin |
| 4357685 |
Method of programming an electrically alterable nonvolatile memory |
November 2, 1982 |
| A nonvolatile memory of the electrically alterable kind comprises an orthogonal array of cells each including a floating-gate IGFET and an enhancement IGFET in series. For the programming or the reading of a selected cell, lying at the intersection of a row and a column of the array, |
| 4355344 |
Protective device electronic semiconductor component |
October 19, 1982 |
| To protect a discrete electronic component such as a bipolar transistor or a field-effect transistor against destructive current surges, one or two ancillary transistors are formed in the same semiconductor body which has a major portion thereof overlain by an output electrode constituti |
| 4319262 |
Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging ga |
March 9, 1982 |
| A lateral PNP transistor with concentric p-doped emitter and collector diffusion zones in an n-doped base layer epitaxially grown on a p-type silicon substrate, covered by a layer of silicon oxide, has emitter and collector electrodes in the form of metallic patches on the oxide layer |
| 4315239 |
Process for producing a calibrated resistance element and integrated circuitry incorporating sam |
February 9, 1982 |
| Filiform elements of predetermined resistivity, e.g. selectively destructible leads of an electrically programmable read-only memory, are formed on a semiconductor substrate such as a silicon body by first depositing thereon a layer of dielectric material such as SiO.sub.2 and toppin |
| 4310571 |
Process for producing a calibrated resistance element |
January 12, 1982 |
| Filiform elements of predetermined resistivity, e.g. selectively destructible leads of an electrically programmable read-only memory, are formed on a semiconductor substrate such as a silicon body by first depositing thereon a layer of dielectric material such as SiO.sub.2 and toppin |
| 4293824 |
Linear differential amplifier with unbalanced output |
October 6, 1981 |
| A linear differential amplifier comprises two main transistors of one conductivity type (e.g. PNP) having emitters connected via a common constant-current generator to an ungrounded terminal of a d-c supply whose grounded other terminal is connected to their collectors via a pair of |
| 4277730 |
Voltage limiter for flyback generator of television sweep system |
July 7, 1981 |
| A flyback generator for a television receiver, in a sweep system driving the vertical-deflection yoke of a cathode-ray tube, comprises a storage capacitor with a low-voltage side grounded through a charging transistor and a high-voltage side connected through an isolating diode to the li |
| 4277291 |
Process for making CMOS field-effect transistors |
July 7, 1981 |
| Two patches of silicon nitride are formed above spaced-apart regions of an n-type substrate (2) on an overlying oxide layer (8) of small thickness. Arsenic ions are then implanted through the oxide layer in substrate areas not covered by the patches whereupon one patch (10a) and an adjoi |
