| Patent Number |
Title Of Patent |
Date Issued |
| 6749485 |
Hydrolytically stable grooved polishing pads for chemical mechanical planarization |
June 15, 2004 |
| An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and pro |
| 6739962 |
Polishing pads and methods relating thereto |
May 25, 2004 |
| Polishing pads are provided having a polishing surface formed from a material. The polishing surface has a topography produced by a thermoforming process. The topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and plan |
| 6736709 |
Grooved polishing pads for chemical mechanical planarization |
May 18, 2004 |
| An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and pro |
| 6722249 |
Method of fabricating a polishing pad having an optical window |
April 20, 2004 |
| A method of fabricating a polishing pad in which a pad material includes a polishing layer overlying a substantially optically transparent backing layer is subjected to a process in which an optical window is formed in the pad material by removing a portion of the polishing layer and exp |
| 6699299 |
Composition and method for polishing in metal CMP |
March 2, 2004 |
| A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as |
| 6699104 |
Elimination of trapped air under polishing pads |
March 2, 2004 |
| A polishing pad includes a polishing layer and an adhesive layer. An adhesive bottom surface of the adhesive layer has an air transmitting pathway to collect air that is expelled from under the adhesive bottom surface, which avoids entrapment of air under the adhesive bottom surface. |
| 6693035 |
Methods to control film removal rates for improved polishing in metal CMP |
February 17, 2004 |
| A method for chemical mechanical planarization of a semiconductor structure comprised of a conductive metal interconnect layer, a barrier or liner film, and an underlying dielectric layer using a two-step polishing process is provided. In the first step, the conducting metal overburden i |
| 6685757 |
Polishing composition |
February 3, 2004 |
| A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammon |
| 6682402 |
Polishing pads and methods relating thereto |
January 27, 2004 |
| This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrofoil polishing material and have an innovative surface topography and texture which generally improves predictabili |
| 6679928 |
Polishing composition having a surfactant |
January 20, 2004 |
| A polishing composition for polishing a semiconductor substrate has a pH of under 5.0 and comprises (a) a carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low |
| 6679769 |
Polishing pad having an advantageous micro-texture and methods relating thereto |
January 20, 2004 |
| This invention relates to polishing pads and a method for making the polishing pad surface readily machineable thereby facilitating permanent alteration of the polishing pad surface to create an advantageous micro-texture. The advantageous micro-texture is statistically uniform and p |
| 6676718 |
Polishing of semiconductor substrates |
January 13, 2004 |
| According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding si |
| 6676483 |
Anti-scattering layer for polishing pad windows |
January 13, 2004 |
| An anti-scattering layer for polishing pad windows as used in chemical-mechanical planarization (CMP) systems is disclosed. The invention finds particular use in circumstances where the windows have a roughened lower surface. The anti-scattering layer is formed over the roughened low |
| 6648733 |
Polishing pads and methods relating thereto |
November 18, 2003 |
| A polishing pad with a polishing layer having a macro-texture and a micro-texture wherein the polishing layer is formed by solidifying a flowable material, the polishing layer further comprising hard domains and soft domains, each domain having an average size less than 100 microns. |
| 6641631 |
Polishing of semiconductor substrates |
November 4, 2003 |
| An aqueous polishing composition having abrasive particles of a metal oxide has a pH that undergoes pH drift, because ions are provided by dissolution of the metal oxide, and the pH drift is minimized by providing the aqueous polishing composition with an equilibrium concentration of the |
| 6641471 |
Polishing pad having an advantageous micro-texture and methods relating thereto |
November 4, 2003 |
| A statistically uniform micro-texture on a polishing pad surface improves break-in preconditioning time, and is measured by: Land Surface Roughness, Ra, from about 0.01 .mu.m to about 25 .mu.m; Average Peak to Valley Roughness, Rtm, from about 2 .mu.m to about 40 .mu.m; Core roughne |
| 6632259 |
Chemical mechanical polishing compositions and methods relating thereto |
October 14, 2003 |
| A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functio |
| 6626740 |
Self-leveling pads and methods relating thereto |
September 30, 2003 |
| A polishing pad having a soft layer with a porous structure impregnated with a relatively hard material that locally deforms irreversibly under polishing pressure to a substantially flat polishing pad surface. |
| 6623337 |
Base-pad for a polishing pad |
September 23, 2003 |
| The invention is directed to a base-pad for placement under a polishing pad for use with a polishing fluid during a polishing operation, the base-pad having a layer with vertical elongated pores that absorb polishing fluid and that confine absorbed polishing fluid from transport laterall |
| 6620036 |
Stacked polishing pad having sealed edge |
September 16, 2003 |
| A stacked polishing pad includes an upper polishing layer and a lower sub-layer having major faces which are in contact with each other. The polishing layer is substantially impermeable to liquid while the sub-layer is liquid absorbent. The sub-layer has an outer peripheral edge which is |
| 6616717 |
Composition and method for polishing in metal CMP |
September 9, 2003 |
| A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as |
| 6607424 |
Compositions for insulator and metal CMP and methods relating thereto |
August 19, 2003 |
| A composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising an organic polymer having a backbone comprised of at least 16 carbon atoms, the polymer having a plurality of moieties with affinity to surface groups on the semiconductor wafer |
| 6605537 |
Polishing of metal substrates |
August 12, 2003 |
| A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower p |
| 6602436 |
Chemical mechanical planarization of metal substrates |
August 5, 2003 |
| A method of polishing a wafer in a carrier by a polishing pad, controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or controlling a first polishing step with a PS to CS ratio in the range of about 150:1 to about 1:150 followed by a second polishing st |
| 6602112 |
Dissolution of metal particles produced by polishing |
August 5, 2003 |
| A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide. |
| 6582283 |
Polishing pads for chemical mechanical planarization |
June 24, 2003 |
| An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and pro |
| 6572449 |
Dewatered CMP polishing compositions and methods for using same |
June 3, 2003 |
| A dry solids composition is provided which may be reconstituted into a chemical-mechanical polishing composition comprising no abrasive particles. |
| 6568997 |
CMP polishing composition for semiconductor devices containing organic polymer particles |
May 27, 2003 |
| This invention is directed to a polishing composition used for the chemical mechanical polishing of semiconductor wafers having a copper metal circuit. The composition has a pH of under 5.0 and comprises the following: (a) a water soluble carboxylic acid polymer comprising polymerized |
| 6561891 |
Eliminating air pockets under a polished pad |
May 13, 2003 |
| A polishing pad assembly is provided that is useful for the chemical mechanical polishing of glass and electrical devices such as semiconductor wafers that comprises a polish pad and a semi-rigid base material firmly adhered to the polishing pad for positioning on a polishing platen of a |
| 6544307 |
Polishing composition and manufacturing and polishing methods |
April 8, 2003 |
| A polishing compound containing cocoon-shaped silica particles and crystal silica particles, and water-soluble polymers including; at least one type selected from the groups including ammonium nitrate and ammonium acetate, and at least one type selected from methylcellulose, carboxym |
| 6537137 |
Methods for chemical-mechanical polishing of semiconductor wafers |
March 25, 2003 |
| Method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of abrasive particles which contact the wafer surface in combination with a reactive liquid solution essentially free of abrasive particles wherein the ionic |
| 6530824 |
Method and composition for polishing by CMP |
March 11, 2003 |
| A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operation, while the |
| 6524168 |
Composition and method for polishing semiconductors |
February 25, 2003 |
| An aqueous polishing composition for chemical mechanical polishing of semiconductor devices of silica and circuits of aluminum, titanium or titanium nitride; wherein said aqueous composition includes, an oxidizing agent, an inhibitor of a polyalkyleneimine, and a pH buffer, and a method |
| 6518188 |
Apparatus and methods for chemical-mechanical polishing of semiconductor wafers |
February 11, 2003 |
| An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to |
| 6517417 |
Polishing pad with a transparent portion |
February 11, 2003 |
| A transparent portion of a polishing pad in the solid phase has an index of refraction nearly matched to the index of refraction of a fluid polishing composition for chemical mechanical polishing, which minimizes scattering of an optical beam at an interface of the transparent portion an |
| 6500053 |
Polishing pads and methods relating thereto |
December 31, 2002 |
| This invention describes improved polishing pads useful in the manufacture ofsemiconductor devices or the like. The pads of the present invention may have an advantageous hydrophilic polishing material and are sufficiently thin to generally improve predictability and polishing performanc |
| 6488570 |
Method relating to a polishing system having a multi-phase polishing layer |
December 3, 2002 |
| A method of making a polishing pad composition comprising a high modulus phase component and a low modulus phase component, and a method of polishing a semiconductor substrate by creating nanoasperities at a polishing interface between the polishing layer and the wafer during polishi |
| 6475069 |
Control of removal rates in CMP |
November 5, 2002 |
| A method for CMP polishing with a first step slurry composition selective to a metal in a metal layer to remove the metal at a high removal rate during polishing, and a second step slurry composition selective to a barrier film and least selective to either of an underlying dielectric |
| 6471571 |
Substrate supporting carrier pad |
October 29, 2002 |
| A carrier head assembly of a substrate polishing apparatus and a substrate supporting carrier pad is disclosed. A down force is uniformly distributed over the backside of the substrate by the carrier pad adapted to be internally pressurized by the down force. |
| 6464741 |
CMP polishing slurry dewatering and reconstitution |
October 15, 2002 |
| A method of making a slurry, by mixing a quantity of water with dissolvable constituents of an aqueous slurry used for polishing, with the dissolvable constituents being apportioned according to their desired per cent concentrations thereof in the aqueous slurry, and drying the mixture t |
| 6464576 |
Stacked polishing pad having sealed edge |
October 15, 2002 |
| A stacked polishing pad includes an upper polishing layer and a lower sub-layer having major faces which are in contact with each other. The polishing layer is substantially impermeable to liquid while the sub-layer is liquid absorbent. The sub-layer has an outer peripheral edge which is |
| 6454634 |
Polishing pads for chemical mechanical planarization |
September 24, 2002 |
| An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and pro |
| 6454633 |
Polishing pads of flocked hollow fibers and methods relating thereto |
September 24, 2002 |
| A polishing pad is provided which is comprised of vertically oriented hollow fibers. Such pads can be produced by electrostatically flocking fibers onto a substrate. |
| 6447375 |
Polishing method using a reconstituted dry particulate polishing composition |
September 10, 2002 |
| A polishing method uses a dry particulate solids composition that is reconstituted into an aqueous composition for delivery to a polishing apparatus. In one aspect of the invention, the dry particulate solids composition is provided in a package size that is just substantially suffic |
| 6447373 |
Chemical mechanical polishing slurries for metal |
September 10, 2002 |
| A slurry for use in chemical-mechanical polishing of a metal layer comprising particles dispersed in an aqueous medium. The slurry particles will tend to agglomerate when the slurry is at rest and will de-agglomerate with simple stirring. Such metastable slurry systems have been foun |
| 6443812 |
Compositions for insulator and metal CMP and methods relating thereto |
September 3, 2002 |
| A composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising an organic polymer having a backbone comprised of at least 16 carbon atoms, the polymer having a plurality of moieties with affinity to surface groups on the semiconductor wafer |
| 6439989 |
Polymeric polishing pad having continuously regenerated work surface |
August 27, 2002 |
| An article or polishing pad for altering a surface of a workpiece includes a polymeric matrix having a work surface and a subsurface proximate to the work surface. When the article is in contact with a working environment, the work surface is made relatively softer than the subsurface as |
| 6428586 |
Method of manufacturing a polymer or polymer/composite polishing pad |
August 6, 2002 |
| Manufacture of a polishing pad for polishing a semiconductor substrate, involves, transporting a backing layer to successive manufacturing stations, supplying a fluid phase polymer composition onto the transported backing layer, shaping the fluid phase polymer composition into a surface |
| 6425816 |
Polishing pads and methods relating thereto |
July 30, 2002 |
| Polishing pads are provided having a polishing surface formed from a material. The polishing surface has a topography produced by a thermoforming process. The topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and plan |
| 6425803 |
Scored polishing pad and methods relating thereto |
July 30, 2002 |
| A polishing pad is provided comprising an upper surface and a lower surface, substantially parallel to one another, wherein the pad has enhanced flexibility produced by scoring of either or both surfaces. The pad thickness is generally greater than 500 .mu.. The scoring creates slits |
