| Patent Number |
Title Of Patent |
Date Issued |
| RE40139 |
Wafer having chamfered bend portions in the joint regions between the contour of the cut-away po |
March 4, 2008 |
| A wafer having chamfered bent portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer such as an orientation flatness. The chipping of the wafer can be prevented, and in coating the wafer with a photoresist, forming an epiaxially grown layer |
| RE39895 |
Semiconductor integrated circuit arrangement fabrication method |
October 23, 2007 |
| To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable sta |
| RE39645 |
Compressed image decompressing device |
May 22, 2007 |
| An image processing device which processes a portion of the decompression process including a lot of comparatively complex operations like an inverse discrete cosine transform by software with using a high-performance, general-purpose processor capable of parallel processing, and the |
| RE39579 |
Semiconductor integrated circuit device comprising RAM with command decode system and logic circ |
April 17, 2007 |
| A semiconductor integrated circuit device includes a logic circuit and a synchronous dynamic random access memory including a core unit, integrated on a single semiconductor chip. The semiconductor integrated circuit device includes a synchronous dynamic random access memory control |
| RE39529 |
Graphic processing apparatus utilizing improved data transfer to reduce memory size |
March 27, 2007 |
| A Memory Interface and Video Attribute Controller (MIVAC) is inserted between a dynamic RAM (DRAM) capable of a consecutive data read operation, such as the operation associated with the static column mode, page mode, or nibble mode, and a graphic processor to provide a parallel data |
| D581932 |
Memory card |
December 2, 2008 |
|
| D504433 |
Memory card |
April 26, 2005 |
|
| 7620410 |
Broadcast station synchronization method and mobile terminal |
November 17, 2009 |
| A broadcast station synchronization method in a mobile terminal operating with a system clock different from the reference clock of a broadcast station, wherein a clock synchronized with the broadcast station is reproduced according to an internal reference clock corrected by the ref |
| 7618855 |
Manufacturing method of semiconductor device |
November 17, 2009 |
| A technology capable of improving the yield in a manufacturing process of a MISFET with a gate electrode formed of a metal silicide film. A gate insulating film is formed on a semiconductor substrate and silicon gate electrodes formed of a polysilicon film are formed on the gate insulati |
| 7616519 |
Semiconductor integrated circuit device |
November 10, 2009 |
| The present invention provides a technique capable of achieving area reduction on a semiconductor integrated circuit device mounted with a time sharing virtual multi port memory or the like. By providing a configuration including a single port memory, data latch circuit for plural po |
| 7616476 |
Thin film magnetic memory device suitable for drive by battery |
November 10, 2009 |
| After a digit line is charged to a power supply voltage by turn-on of a first switching element, the first switching element is turned off and a second switching element is turned on, whereby the digit line is connected to a ground voltage. Similarly, in order to feed data write curr |
| 7616221 |
Driving circuits for display device |
November 10, 2009 |
| A driving circuit provided by the present invention is characterized in that the driving circuit selects a gray-scale voltage in accordance with high-order bits of display data from a group of gray-scale voltages with their voltage level varying step by step from fractional time period t |
| 7615872 |
Semiconductor device |
November 10, 2009 |
| A semiconductor device comprises: a package substrate having a plurality of bonding electrodes arranged in a peripheral region of a main surface thereof and wirings connected to the respective bonding electrodes and electrolessly plated; a semiconductor chip mounted on the package su |
| 7615855 |
IC card and method of manufacturing the same |
November 10, 2009 |
| An IC body is loaded to a case 2 made of thermosetting resin material and sealed with a sealing portion made of thermosetting resin material to be integrated, whereby an IC card is manufactured. The IC body comprises: a wiring substrate formed with an external connection terminal at a ba |
| 7615848 |
Semiconductor device and a method of manufacturing the same |
November 10, 2009 |
| A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conduc |
| 7615453 |
Method of manufacturing a semiconductor integrated circuit device |
November 10, 2009 |
| In the chip with which a plurality of MISFET from which threshold value voltage differs is intermingled, leakage current, such as GIDL current and BTBT current, is suppressed, inhibiting the short channel effect of MISFET. The concentration of the impurity for threshold value voltage |
| 7613880 |
Memory module, memory system, and information device |
November 3, 2009 |
| A memory system including large-capacity ROM and RAM in which high-speed reading and writing are enabled is provided. A memory system including a non-volatile memory (CHIP1), DRAM (CHIP3), a control circuit (CHIP2) and an information processing device (CHIP4) is configured. Data in FLASH |
| 7612417 |
Semiconductor integrated circuit device |
November 3, 2009 |
| Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a |
| 7612402 |
Nonvolatile memory semiconductor device and manufacturing method thereof |
November 3, 2009 |
| To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory, a polycrystalline silicon film 7 and an insulating film 8 are sequentially stacked on a gate insulating film 6, then the polycrystalline silicon film 7 and the insu |
| 7612391 |
Semiconductor integrated circuit device |
November 3, 2009 |
| In a low power consumption mode in which prior data is retained upon power shutdown, the return speed thereof is increased. While use of an existent data retaining flip-flop may be considered, this is not preferred since it increases area overhead such as enlargement of the size of a cel |
| 7611942 |
Semiconductor integrated circuit device and a method of manufacturing the same |
November 3, 2009 |
| A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed |
| 7610572 |
Semiconductor integrated circuit device with independent power domains |
October 27, 2009 |
| A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a chip. In the semicond |
| 7609545 |
Semiconductor device |
October 27, 2009 |
| To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores information depending on a change in its state caused by applied heat, as well as an in |
| 7609544 |
Programmable semiconductor memory device |
October 27, 2009 |
| The present invention provides a technology which can suppress a variation in a value after a write operation to minimum so as to facilitate multi-bit operation in a semiconductor device such as a phase change memory. A semiconductor device includes: a memory cell having a storage el |
| 7608922 |
Semiconductor device including amplifier and frequency converter |
October 27, 2009 |
| A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for c |
| 7608879 |
Semiconductor device including a capacitance |
October 27, 2009 |
| It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (167a to 167c) is selectively formed in an upper la |
| 7606323 |
Carrier leak reduction transmitter circuit |
October 20, 2009 |
| A transmitter circuit has two mixers that modulate a carrier wave according to an input signal, outputs a signal having information in a phase and an amplitude, detects a DC offset in each of the mixers, and adds a DC voltage that corrects the detected DC offset to the input signal o |
| 7605448 |
Semiconductor device with seal ring |
October 20, 2009 |
| A semiconductor device according to the invention is a semiconductor device which includes a low dielectric constant film of which the relative dielectric constant is less than 3.5, is provided with one or more seal rings that are moisture blocking walls in closed loop form in a plan |
| 7605420 |
Semiconductor tunneling magneto resistance device and method of manufacturing the same |
October 20, 2009 |
| The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TM |
| 7605085 |
Method of manufacturing interconnecting structure with vias |
October 20, 2009 |
| First wirings and first dummy wirings are formed in a p-SiOC film formed on a substrate. A p-SiOC film is formed, and a cap film is formed on the p-SiOC film. A dual damascene wiring, including vias connected to the first wirings and the second wirings, is formed in the cap film and the |
| 7604727 |
Electroplating method for a semiconductor device |
October 20, 2009 |
| An electroplating method calls for immersing a body to be plated in a plating solution containing tin and bismuth to form a tin-bismuth alloy skin layer on surfaces of the body. The plating is carried out such that a solid tin metal and a solid bismuth metal placed in the plating sol |
| 7603194 |
Fabrication system and fabrication method |
October 13, 2009 |
| A fabricating method for a system that includes a plurality of processing apparatuses connected to each other by an inter-apparatus transporter and a computer storing managing information of processing and transporting of semiconductor wafers. The processing apparatuses have an interface |
| 7602665 |
Semiconductor integrated circuit device |
October 13, 2009 |
| A clock-generating circuit for forming internal clock signals by comparing a signal obtained by delaying, through a variable delay circuit, an input clock signal input through an external terminal with the input clock signal through a phase comparator circuit, and so controlling the dela |
| 7602063 |
Semiconductor device and manufacturing method therefor |
October 13, 2009 |
| In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric cons |
| 7602045 |
Semiconductor device and inverter device using the same |
October 13, 2009 |
| In a semiconductor device having a pair of IGBT and diode which are connected to each other in inverse-parallel in which a collector-electrode of the IGBT and a cathode-electrode of the diode are wired to each other, and an emitter-electrode of the IGBT and an anode-electrode of the |
| 7602040 |
Semiconductor device and a method of manufacturing the same |
October 13, 2009 |
| In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing |
| 7601635 |
Method of manufacturing a semiconductor device |
October 13, 2009 |
| For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gat |
| 7601581 |
Method of manufacturing a semiconductor device |
October 13, 2009 |
| Provided is a manufacturing method of a semiconductor device, which comprises forming a film stack of a gate insulating film, a charge storage film, insulating film, polysilicon film, silicon oxide film, silicon nitride film and cap insulating film over a semiconductor substrate; rem |
| 7599214 |
Semiconductor memory device |
October 6, 2009 |
| Source contacts of driver transistors are short-circuited through the use of an internal metal line within a memory cell. This metal line is isolated from memory cells in an adjacent column and extends in a zigzag form in a direction of the columns of memory cells. Individual lines for |
| 7598570 |
Semiconductor device, SRAM and manufacturing method of semiconductor device |
October 6, 2009 |
| A semiconductor device according to the present invention is provided with an SOI substrate, an active region, a first insulating film (complete separation insulating film), a second insulating film (partial separation insulating film), and a contact portion. Here, the active region is |
| 7598558 |
Method of manufacturing semiconductor integrated circuit device having capacitor element |
October 6, 2009 |
| In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the |
| 7598171 |
Method of manufacturing a semiconductor device |
October 6, 2009 |
| A method of manufacturing a semiconductor device according to the present invention includes the steps of introducing first impurities of a first conductivity type into a main surface of a semiconductor substrate 1 to form a first impurity region, introducing second impurities of a secon |
| 7598154 |
Manufacturing method of semiconductor device |
October 6, 2009 |
| Size of a chipping is made small, suppressing blinding of a blade, when performing dicing of a wafer.When cutting a wafer, cutting is performed so that the portion of a V character-shaped shoulder may enter below the front surface of a wafer (depth Z.sub.2 from a substrate front surface) |
| 7598133 |
Semiconductor memory device and a method of manufacturing the same |
October 6, 2009 |
| A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly comprise laminate formed of a lower semiconductor layer, intermediate semiconductor layer and |
| 7598121 |
Method of manufacturing a semiconductor device |
October 6, 2009 |
| A method of manufacturing a semiconductor device includes the steps of: grinding the rear surface of a semiconductor wafer to reduce its thickness; flattening the rear surface of the semiconductor wafer; dividing the semiconductor wafer into a plurality of semiconductor chips; formin |
| 7598100 |
Manufacturing method of semiconductor integrated circuit device |
October 6, 2009 |
| As the thickness of the card holder for preventing warping of a multilayered wiring substrate 1 is increased, there occurs a problem that a thin film sheet 2 is buried in a card holder and secure contact between probes 7 and test pads cannot be realized. For its prevention, the thin |
| 7596041 |
Nonvolatile memory system |
September 29, 2009 |
| The invention is directed to largely improve reliability by surely protecting data on the basis of an emergency stop request even during a data transfer process. The invention provides a data memory system taking the form of a memory card or the like. When an emergency stop signal re |
| 7596033 |
Nonvolatile semiconductor memory device |
September 29, 2009 |
| A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is inverted in a Y di |
| 7596013 |
Semiconductor integrated circuit and manufacturing method therefor |
September 29, 2009 |
| High manufacturing yield is realized and variations in threshold voltage of each MOS transistor in a CMOS.cndot.SRAM is compensated. Body bias voltages are applied to wells for MOS transistors of each SRAM memory cell in any active mode of an information holding operation, a write op |
| 7595694 |
Electronics parts for high frequency power amplifier |
September 29, 2009 |
| This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseb |
