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RFMD Patents
Assignee:
RFMD
Address:
UK) Limited (Newton Aycliffe, GB
No. of patents:
13
Patents:












Patent Number Title Of Patent Date Issued
8174054 Field effect transistor with interdigitated fingers and method of manufacturing thereof May 8, 2012
A field effect transistor comprising a semiconductor substrate comprising an electrically conducting channel layer therein; a plurality of source and drain fingers on a first face of the substrate, each finger separated from the adjacent finger by a gate channel; the gate channels compri
8115233 Field effect transistor having multiple pinch off voltages February 14, 2012
A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein. An ohmic contact layer
8105888 Diode assembly January 31, 2012
A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising a semiconductor substrate; an electrically conducting channel layer on the semiconductor substrate; an upper semiconductor layer on the channe
8101973 Transistor January 24, 2012
A heterojunction bipolar transistor comprising a substrate; a collector on the substrate; a base layer on the collector; an emitter layer on the base layer; the emitter layer comprising an upper emitter layer and a lower emitter layer between the upper emitter layer and base; the c
7939866 Field effect transistor May 10, 2011
A transistor includes a first electrode on a substrate, wherein the first electrode comprises a bus bar and has first and second first electrode fingers extending therefrom, the fingers being spaced apart to define a channel therebetween. The transistor also includes a second electrode o
7880198 Field effect transistor having multiple pinch off voltages February 1, 2011
A compound field effect transistor having multiple pinch-off voltages comprising: first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein; an ohmic contact layer
7862859 Method of correcting for pattern run out January 4, 2011
A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps of providing a test substrate; providing a stencil of known thickness on the test substrate; providing a stencil pattern extending through the stencil to the te
7851830 Multigate Schottky diode December 14, 2010
A multigate Schottky diode comprising an electrically conducting active semiconductor region; first and second electrically connected metallic contact arms on the active semiconductor region forming ohmic contacts therewith; the ohmic contacts being spaced apart on the active semicon
7795641 Diode assembly September 14, 2010
A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising a semiconductor substrate; an electrically conducting channel layer on the semiconductor substrate; an upper semiconductor layer on the channe
7705698 Field effect transistor and a linear antenna switch arm April 27, 2010
A field effect transistor comprising a substrate; an electrically conducting channel within the substrate; an electrically conducting source on the substrate comprising a source finger; an electrically conducing drain on the substrate comprising a drain finger; the source and drain f
7692514 Linear antenna switch arm April 6, 2010
A linear antenna switch arm comprising a plurality of field effect transistors connected in series, the drain of each transistor being connected to the source of the next transistor at a join, the end source comprising one of a signal input or output port and the end drain comprising
7532094 Linear antenna switch arm and a field effect transistor May 12, 2009
A linear antenna switch arm comprising a field effect transistor comprising a source, a drain and a plurality of gates; a signal line connected between source and drain, the signal line comprising at least one signal line resistor; at least one gate being connected to the signal line
7440254 Micro-electromechanical variable capacitor October 21, 2008
A micro-electromechanical variable capacitor with first and second capacitor plates spaced apart to define a gap therebetween. The first plate has two control electrodes and an active electrode. The second plate is movable relative to first plate when a voltage is applied to produce

 
 
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