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Osram Opto Semiconductors GmbH Patents
Assignee:
Osram Opto Semiconductors GmbH
Address:
Regensburg, DE
No. of patents:
225
Patents:


1 2 3 4 5


Patent Number Title Of Patent Date Issued
RE40718 Method for producing nitride monocrystals June 9, 2009
The inventive method exploits the fact that in solutions or melts which contain certain organic substances, small nitride crystallites consisting of GaN or AlN are formed by thermal reaction and decomposition. A vessel containing the melt is kept at a first temperature T.sub.1. In the ve
7621658 Light-emitting module November 24, 2009
A light-emitting module is specified that comprises a light source, a carrier for said light source, and an optical element, wherein the optical element comprises dowel pins that engage in corresponding recesses in the carrier. The light-emitting module is particularly well suited fo
7620088 Surface emitting-semiconductor laser component featuring emission in a vertical direction November 17, 2009
A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (4, 5). The comp
7620087 Radiation-emitting semiconductor component November 17, 2009
A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength .lamda..sub.1 (11
7607804 Lighting means having a primary optics element and an optical apparatus October 27, 2009
A lighting device with a light source followed by an optical apparatus in an emission direction, and a primary optics element with a light inlet and a light outlet being arranged between the light source and the optical apparatus. The primary optics element is designed such that desi
7598529 Semiconductor chip having a soldering layer sequence, and process for soldering a semiconductor October 6, 2009
A semiconductor chip (1), to which a layer sequence (2) intended for the production of a soldered connection has been applied. The layer sequence (2) comprises a solder layer (15) and an oxidation prevention layer (17), which follows the solder layer (15) as seen from the semiconductor c
7592636 Radiation-emitting semiconductor component and method for the production thereof September 22, 2009
A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater th
7592194 Radiation-emitting and/or -receiving semiconductor component and method for the patterned applic September 22, 2009
A radiation-emitting and/or -receiving semiconductor component comprising a semiconductor body (1), which has an active zone (2) provided for radiation generation or for radiation reception, a lateral main direction of extent and a main area, and also a protective layer (6) arranged on
7589465 Getter material September 15, 2009
An embodiment of an encapsulated organic optoelectronic device is described. The encapsulated device includes a hybrid getter film which is composed of a getter and a handling agent.
7586265 Illumination device September 8, 2009
An illumination device is described that includes a light source that is an organic light-emitting diode and a control device capable of adjusting the current through the organic light-emitting diode, which increases current as the electric resistance of the organic light-emitting diode
7586245 Using prismatic microstructured films for image blending in OLEDS September 8, 2009
An apparatus such as a light source is disclosed which has an OLED device and a microstructured film disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The microstructured film contains features which diffuse light emitted by
7586190 Optoelectronic component and a module based thereon September 8, 2009
An optoelectronic component (1) having a semiconductor arrangement (4) which emits and/or receives electromagnetic radiation and which is arranged on a carrier (22) which is thermally conductively connected to a heat sink (12). External electrical connections (9) are connected to the
7581860 Headlight and headlight element September 1, 2009
A headlight having a multitude of headlight elements, which each have at least one semiconductor chip which emits electromagnetic radiation; a primary optics element, which reduces the divergence of the light which is incident through the light input; and at least one headlight element
7576356 Solution processed crosslinkable hole injection and hole transport polymers for OLEDs August 18, 2009
A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants.
7573927 Semiconductor laser with reduced heat loss August 11, 2009
Disclosed is a semiconductor laser. The semiconductor laser includes a semiconductor chip that includes an active layer and emits radiation in a main radiating direction. The active layer is structured in a direction perpendicular to the main radiating direction to reduce heating of the
7570682 VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter August 4, 2009
A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitt
7570147 Fuse component comprising an optical indicator August 4, 2009
A fuse component with an optical indicator, which has a first terminal (2) and a second terminal (3) and also a fusible link (4), which connects the terminals (2) and (3) in an electrically conducting manner. Connected in parallel with the fusible link (4) is at least one LED (8), which
7564080 Method for producing a laser diode component, housing for a laser diode component, and laser dio July 21, 2009
A method for producing a laser diode component having an electrically insulating housing basic body and electrical connecting conductors, which are led out from the housing basic body and are accessible from outside the housing basic body. The housing basic body is produced from a ma
7563707 Laser process for reliable and low-resistance electrical contacts July 21, 2009
Disclosed is a method for manufacturing an organic optoelectronic device. The method comprises providing a substrate, disposing a first electrode on the substrate, disposing a metal pad on the substrate, electrically separated from the first electrode, disposing a first material over the
7560741 Lighting module and method for the production thereof July 14, 2009
An illumination module with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and has a first and a second electrical connection side and also an fabricated semiconductor layer sequence. The semiconductor layer
7558453 Arrangement of a micro-optical component on a substrate, a method for adjustment of the arrangem July 7, 2009
An arrangement of a microoptical component on a substrate, containing an adjustment connection which is provided between the component and the substrate and containing a first and a second connection element, which, matching one another, have first and second surfaces which are in contac
7554258 Light source having an LED and a luminescence conversion body and method for producing the lumin June 30, 2009
A light source, having at least one LED for emitting a primary radiation and at least one luminescence conversion body having at least one luminescent material for converting the primary radiation into a secondary radiation. The luminescence conversion body is a polycrystalline ceram
7554257 Method to generate high efficient devices which emit high quality light for illumination June 30, 2009
An electroluminescent apparatus includes an OLED device emitting light in the blue and green spectrums, and at least one down conversion layer. The down conversion layer absorbs at least part of the green spectrum light and emits light in at least one of the orange spectra and red spectr
7551660 Optically pumped semiconductor laser device June 23, 2009
An optically pumped semiconductor laser apparatus. The apparatus includes a vertical emitter which has a central waveguide and a quantum well structure which is arranged within the central waveguide and has at least one quantum layer. The apparatus also includes a pump radiation source,
7550915 Organic electronic device with hole injection June 23, 2009
In a first embodiment of the present invention, in order to increase the number of holes injected into the emissive layer, an intermixed layer is formed from the intermixing of the hole transport layer ("HTL") and the emissive layer. The intermixed layer is between the HTL and the emissi
7547921 Semiconductor chip for optoelectronics June 16, 2009
An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing
7535017 Flexible multilayer packaging material and electronic devices with the packaging material May 19, 2009
The invention discloses a flexible multilayer packaging material for protecting articles that are sensitive to moisture and oxidizing agents. The packaging material has at least one active polymeric barrier layer that is able to bind the moisture and oxidizing agents and at least one
7529284 Semiconductor optical pumping device for radiation emission and the production method thereof May 5, 2009
An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically
7525083 Radiation detector with an epitaxially grown semiconductor body April 28, 2009
A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detect
7524737 Method of fabricating a semiconductor chip with a nitride compound semiconductor material April 28, 2009
In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by
7524687 Method for producing a radiation-emitting-and-receiving semiconductor chip April 28, 2009
A method for producing an integrated semiconductor component comprising a first semiconductor layer construction for emitting radiation and a second semiconductor layer construction for receiving radiation, wherein a substrate is first provided and a first semiconductor layer sequence
7522646 Vertically emitting optically pumped diode laser with external resonator April 21, 2009
A vertically emitting semiconductor laser with an external resonator, a semiconductor body (1) in which a quantum well structure (4) is located as active zone that includes quantum wells (6) and barrier layers (5) situated therebetween, and at least one pumping radiation source (9) for
7521856 OLED device April 21, 2009
An organic light-emitting device (OLED) comprising an organic active region which emits electromagnetic radiation, a conversion material which converts a portion of the radiation into light of a certain spectral range, and a filter material which transmits said light.
7521723 Surface emitting semiconductor laser chip and method for producing the chip April 21, 2009
A surface emitting semiconductor laser chip contains a semiconductor body, which has, at least partly, a crystal structure with principal crystal directions, a radiation exit face, and side faces laterally delimiting the semiconductor body. At least one of the side faces is disposed
7514723 Optoelectronic component April 7, 2009
Optoelectronic component, having a basic body or housing (2), at least one optoelectronic semiconductor chip (3) arranged in a recess of the basic body, and a potting composition (5) made of a transparent material, which potting composition embeds the at least one semiconductor chip in t
7514279 Optoelectronic component and method for producing it April 7, 2009
An optoelectronic component having a basic housing or frame (12) and at least one semiconductor chip (20), specifically a radiation-emitting or -receiving semiconductor chip, in a cavity (18) of the basic housing. In order to increase the efficiency of the optoelectronic component (10),
7510890 Method for producing a luminescence diode chip March 31, 2009
A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation dur
7504770 Enhancement of light extraction with cavity and surface modification March 17, 2009
An organic light emitting diode (OLED) device includes an anode layer upon a DBR (Distributed Bragg Reflector) stack such that the anode layer is modified by creating lens-like features on its surface. The OLED device also includes a planarizing layer on said anode layer, said planarizin
7502399 Package for a laser diode component, laser diode component and method for producing laser diode March 10, 2009
A package for a laser diode component is described. This comprises a carrier, which has on a front side a mounting region for a laser diode chip or laser diode bar, and at least one holding device, which is arranged on the carrier and has at least one aperture, in which an electrical
7501660 Housing for an electronic component March 10, 2009
A housing is specified for an electronic component having at least two connecting parts (4a, 4b), which are partially in contact with the housing. The conductivity of at least subareas of the housing are set in a defined manner and current paths through the housing are formed between
7498737 Method of manufacturing an organic electronic device and organic electronic device March 3, 2009
The invention discloses a method for manufacturing an organic electro-luminescent display device, the method comprising the steps of: providing a light-permeable substrate; arranging a plurality of transparent electrodes in a stripe-like manner on the light-permeable substrate, the t
7495249 Radiation-emitting semiconducting body with confinement layer February 24, 2009
A radiation-emitting semiconductor with a radiation-emitting active layer having In.sub.xAl.sub.yGa.sub.1-x-yP (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) is described. The active layer is arranged between a first confinement layer and a second confinement layer
7489074 Reducing or eliminating color change for microcavity OLED devices February 10, 2009
In an embodiment of the invention, a microcavity OLED device that minimizes or eliminates color change at different viewing angles is fabricated. The OLED device can be, for example, an OLED display or an OLED light source used for area illumination. This OLED device includes a multi
7488622 Method for producing a surface-mountable semiconductor component February 10, 2009
Presented is a method for simultaneously producing a multiplicity of surface-mountable semiconductor components each having at least one semiconductor chip, at least two external electrical connections, which are electrically conductively connected to at least two electrical contacts
7485243 Luminescent material and light emitting diode using the same February 3, 2009
UV-blue excitable luminescent material consisting of a Eu-doped oxynitride host lattice with general composition MAI.sub.2-xSixO.sub.4-xN.sub.x, wherein M is at least one of an alkaline earth metal chosen from the group Ca, Sr, Ba.
7482181 Method for fabricating a light-emitting device based on a gallium nitride-based compound semicon January 27, 2009
A light-emitting device is based on a gallium nitride-based compound semiconductor. A light-emitting layer with a first and a second main surface is formed from a compound semiconductor based on gallium nitride. A first coating layer, which is joined to the first main surface of the
7481951 Luminescent powder, method for producing the luminescent powder and luminescent body provided wi January 27, 2009
A luminescent powder (1) with luminescent particles (2) having an average luminescent-particle size (3) selected from the range of from 0.1 .mu.m inclusive to 5.0 .mu.m inclusive. The luminescent particles comprise primary particles (4) having an average primary-particle size (5) sel
7479732 Luminescence conversion of LED with phosphorescence effect, and use thereof and operational meth January 20, 2009
A light source, comprising at least one LED for emitting primary radiation, and at least one phosphor for converting the primary radiation into secondary radiation. The secondary radiation has a decay time at room temperature of at least 0.1 seconds before the luminescence intensity
7476906 Photodiode array and method for establishing a link between a first semiconductor element and a January 13, 2009
The invention relates to a photodiode array comprising a photodiode and a submount, via which the photodiode is contacted, said photodiode and said submount being interlinked by eutectic bonding. The invention further relates to a method for establishing a link between a first semiconduc
7473924 Electroluminescent device with a blocking layer and a dummy electrode region January 6, 2009
Disclosed is an organic electroluminescent display, comprising a first active electrode region and a first dummy electrode region, the first dummy electrode region electrically isolated from the first active electrode region. Further disclosed is an organic electroluminescent display
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