| Patent Number |
Title Of Patent |
Date Issued |
| 5392729 |
Method of producing silicon single crystal |
February 28, 1995 |
| A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon |
| 5260037 |
Apparatus for producing silicon single crystal |
November 9, 1993 |
| An apparatus and a method for producing a silicon single crystal by Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the |
| 5225235 |
Semiconductor wafer and manufacturing method therefor |
July 6, 1993 |
| A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities therefrom which causes auto-doping, |
| 5223077 |
Method of manufacturing single-crystal silicon |
June 29, 1993 |
| A single crystal silicon is prepared by providing a silicon melt reservoir formed of an induction coil coated on its internal surfaces with a high melting insulating material which is subjected to an electromagnetic field which heats silicon placed in said melt reservoir, melting silicon |
| 5211802 |
Method for producing silicon single crystal from polycrystalline rod formed by continous casting |
May 18, 1993 |
| A method of producing single-crystal silicon is disclosed. Polycrystalline silicon rod is formed from polycrystalline silicon granules, lumps or a mixture thereof by continuous casting through electromagnetic induction. Then, silicon single cyrstal is grown from the polycrystalline silic |
| 5204031 |
Powder of oxide for dielectric ceramics and a process for producing dielectric ceramics |
April 20, 1993 |
| A powder of oxide which is a material for dielectric ceramics including perovskite-type double oxide containing lead, and a process for producing dielectric ceramics using the powder. In the process of this invention, perovskite-type double oxide containing lead are initially produced by |
| 5152867 |
Apparatus and method for producing silicon single crystal |
October 6, 1992 |
| An apparatus and a method for producing a silicon single crystal by the Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the |
| 5108490 |
Method of refining high purity titanium |
April 28, 1992 |
| A method of refining high purity titanium, which comprises reacting crude titanium with titanium tetraiodide in a reactor, thereby forming lower valent titanium iodides, and thermally decomposing the formed lower valent titanium iodides, and depositing high purity titanium. |
| 5077028 |
Manufacturing high purity/low chlorine content silicon by feeding chlorosilane into a fluidized |
December 31, 1991 |
| A method of manufacturing high-purity silicon crystals, which comprises depositing silicon on the surface of high-purity silicon particles, while feeding into a fluidized bed reactor at a high temperature a material gas consisting of high purity chlorosilane and a diluting gas, said meth |
| 5051375 |
Method of producing semiconductor wafer through gettering using spherical abrasives |
September 24, 1991 |
| Disclosed is a method of producing a semiconductor wafer through gettering by means of sand blasting in a semiconductor wafer fabrication process. The method includes blasting abrasives each having a configuration at least similar to a sphere against a back surface of the semiconductor |
| 5041308 |
Method of coating silicon particles |
August 20, 1991 |
| An apparatus for heating polycrystalline silicon, in which polycrystalline silicon of semiconductor grade placed in the reaction vessel is directly heated by means of a heater outside of the reaction vessel where the inner surface of the reaction vessel is formed of graphite coated with |
| 5037503 |
Method for growing silicon single crystal |
August 6, 1991 |
| A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 |
| 4986215 |
Susceptor for vapor-phase growth system |
January 22, 1991 |
| A susceptor for use in a vertical vapor-phase growth system designed to heat substrates by means of heat transferred and radiated from a susceptor heated to cause vapor-phase growth on the substrates. The susceptor has a large number of spot-faced portions for receiving substrates, r |
| 4959603 |
Solar battery equipment |
September 25, 1990 |
| A solar battery system characterized by at least one solar cell for converting light energy to electrical energy which is stored in the system is provided. The solar cell is formed of a semiconductor selected from the group consisting of single crystal, polycrystalline and amorphous |
| 4925809 |
Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and |
May 15, 1990 |
| A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities therefrom which causes auto-doping, |
| 4915723 |
Apparatus for casting silicon with gradual cooling |
April 10, 1990 |
| For the continuous casting of silicon, an electrically conductive bottomless crucible is circumferentially divided by axial slits and is positioned within an electrical induction coil. The slits form circumferential gaps of between 0.3 mm and 1.0 mm and the inner wall of the crucible |
| 4613489 |
Process for the disproportionation of chlorosilanes |
September 23, 1986 |
| The process of disproportionation of chlorosilanes in the presence of a dried catalyst which is dried by heating up to 200.degree. C. under vacuum starting from a water-containing anion exchange cross-linked resin matrix containing as a functional group and said resin matrix stable at |
| 4562338 |
Heating power supply apparatus for polycrystalline semiconductor rods |
December 31, 1985 |
| A heating power supply apparatus for polycrystalline semiconductor rods, including a power transformer and anti-parallel thyristor unit groups connected to respective portions of the secondary of the power transformer, balance transformer groups connected to the anti-parallel thyrist |
