| Patent Number |
Title Of Patent |
Date Issued |
| 7624392 |
USB device set |
November 24, 2009 |
| A USB device set includes a first USB device, which is operable both as a host device and as a peripheral device; and a second USB device, which is operable both as a host device, and as a peripheral device. Each of the first and second USB devices includes: a first memory region storing |
| 7622394 |
Method of fabricating semiconductor device including forming a protective layer and removing aft |
November 24, 2009 |
| The method of fabricating a semiconductor device includes subjecting a semiconductor substrate to trench etching by alternately repeating an etching step and a deposition step. The etching step creates a trench structure by dry-etching the exposed surface of the semiconductor substra |
| 7621732 |
Molding apparatus for manufacturing semiconductor device |
November 24, 2009 |
| A molding apparatus including an upper half having a substrate mounting plate; and a lower half coupled with the upper half to form a cavity there between, wherein the substrate mounting plate faces the cavity, wherein the lower half includes a projecting part which has a top surface |
| 7620090 |
Semiconductor laser device |
November 17, 2009 |
| A semiconductor laser device includes a supporting substrate having a wiring pattern thereon; LD fixed on the surface of the supporting substrate and having a signal output section that emits signal laser light and a monitoring output section that emits monitoring laser light; and a |
| 7619478 |
Operational amplifier having its compensator capacitance temporarily disabled |
November 17, 2009 |
| An operational amplifier includes a differential amplifier connected between an input and an output port of the operational amplifier, a phase compensator capacitance connected between the differential amplifier and the output port, a switching transistor for controlling the connection |
| 7618861 |
Method of manufacturing non-volatile memory device using multiple element isolation regions and |
November 17, 2009 |
| Separate first and second floating gates for attracting carriers transferring in a transistor structure having a channel region and first and second main electrode regions into charge storage films therebelow are formed so as to largely face a control gate. The control gate between t |
| 7616167 |
Semiconductor device and method of producing the same |
November 10, 2009 |
| A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface; a first through wiring penetrating through the semiconductor substrate from the first surface to the second surface; an antenna formed on the first sur |
| 7615835 |
Package for semiconductor acceleration sensor |
November 10, 2009 |
| A semiconductor device comprises a package having a cavity in the interior thereof, a chip having a semiconductor element, a board having the chip fixed to a first region on the upper face thereof, and an adhesive portion formed in a second region on the bottom face of the board in o |
| 7614301 |
Acceleration sensor chip package and method of producing the same |
November 10, 2009 |
| An acceleration sensor chip package includes an acceleration sensor chip formed of a frame portion with an opening portion, a movable structure, a detection element, and an electrode pad. The movable structure has a beam portion and a movable portion supported on the beam portion to be |
| 7608900 |
Semiconductor device and method of manufacturing and inspection thereof |
October 27, 2009 |
| An accelerator sensor includes a semiconductor substrate having a main front surface and a main rear surface, a first groove portion being formed along a front surface pattern, in the main front surface, a second groove portion being formed along a rear surface pattern, in the main r |
| 7608887 |
Non-volatile semiconductor memory device and method for manufacturing the same |
October 27, 2009 |
| In a non-volatile semiconductor memory device having a MONOS structure, a memory cell section for storing information, and a periphery circuitry section for writing and reading the information with respect to the memory cell section are formed in the surface region of a silicon subst |
| 7608864 |
High electron mobility transistor with mesa structure and reduced gate leakage current |
October 27, 2009 |
| The semiconductor device (10) comprises a semiinsulating substrate (12), a layered structure (20) of compound semiconductor which is a mesa structure (18) and contains an active channel layer (14), a first and a second metal main electrodes (22a, 22b) which are provided on the layered |
| 7606447 |
Mach-Zehnder type semiconductor device and method of controlling the same |
October 20, 2009 |
| A Mach-Zehnder type semiconductor device includes electrodes for injecting carriers into first and second branch waveguides so as to change reflection indexes of the first and second branch waveguides. The device further includes electrodes which are placed above either one of the fi |
| 7602326 |
Digital-to-analog converter having resistor string with ranges to reduce circuit elements |
October 13, 2009 |
| An analog-to-digital converter has a resistor string that generates a series of voltages. An upper selector selects voltages at the upper end of the series. A lower selector selects voltages at the lower end of the series. A pair of midrange selectors select a pair of adjacent voltages |
| 7602263 |
Branching filter package |
October 13, 2009 |
| A branching filter package has a SAW filter chip housing area which houses a piezo electric base, on which a transmitting SAW filter and a receiving SAW filter having a different frequency passing band with each other, are formed, and an impedance matching circuit and a branching circuit |
| 7602237 |
Amplifying circuit |
October 13, 2009 |
| In an amplifying circuit, a first and a second switches are provided between an input terminal and output terminal of coupling capacitor and amplifier, and these switches are set in OFF state in a power-down state, and the second switch is turned on for a specified period when changed |
| 7602012 |
Semiconductor memory devices with charge traps |
October 13, 2009 |
| A memory cell in a semiconductor memory device has a pair of charge traps formed on opposite sides of a control electrode, above variable resistance regions in the semiconductor substrate. Each charge trap includes a tunnel oxide film, a dual-layer charge trapping film, and a top oxi |
| 7601617 |
Semiconductor wafer and manufacturing method thereof |
October 13, 2009 |
| The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral portion thereof, and a silicon thin film formed over the entire one surface of the ins |
| 7601599 |
Semiconductor device and method for manufacturing the same |
October 13, 2009 |
| A method for manufacturing a semiconductor device includes the steps of (a) forming a first insulating film pattern, which has a first portion and a second portion separated from the first portion through a first space, above a semiconductor substrate, (b) selectively forming a first |
| 7601594 |
Method for fabricating semiconductor memory |
October 13, 2009 |
| A method for fabricating a semiconductor memory, the method including: forming an element isolation region in a concave portion of the semiconductor substrate; forming a layer of a gate electrode material so as to cover the concave portion and the element isolation region; forming a |
| 7601051 |
Grinding machine having grinder head and method of manufacturing semiconductor device by using t |
October 13, 2009 |
| A grinding machine for grinding a workpiece, including a chucking table having a chucking area and a grinder head. The grinder head includes a spinning disk rotating about a rotation axis and a plurality of grindstones, which are circularly arranged on a surface of the spinning disk, |
| 7600142 |
Integrated circuit conserving power during transitions between normal and power-saving modes |
October 6, 2009 |
| An integrated circuit includes a volatile memory, a central processing unit that normally operates on a first clock, and an input-output circuit that transfers data in synchronization with a second clock having a lower frequency than the first clock. The integrated circuit has a power-sa |
| 7599207 |
Semiconductor memory device |
October 6, 2009 |
| A ferroelectric memory cell array has 1T/1C memory cells disposed in matrix form. An address storage unit stores threshold memory addresses for dividing the array into a first block for causing each memory cell to store one-bit data for each memory cell and a second block for causing |
| 7598618 |
Semiconductor device |
October 6, 2009 |
| A semiconductor device that enables the transmission time of a signal and implementation area to be reduced, and a method for manufacturing the same. A semiconductor device includes a first semiconductor substrate, a capacitor chip, an external input terminal, and an external output |
| 7598537 |
Semiconductor device |
October 6, 2009 |
| A semiconductor device comprises one or two semiconductor chips, each including an input circuit having a wiring (3) for connecting an input pad (2) to an inner circuit, a first electrostatic protection element (1) electrically connected to the wiring, a second electrostatic protection |
| 7598140 |
Method of producing a semiconductor device having an oxide film |
October 6, 2009 |
| A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each othe |
| 7595545 |
Anodic bonding apparatus, anodic bonding method, and method of producing acceleration sensor |
September 29, 2009 |
| An anodic bonding apparatus includes a first electrode and a second electrode. The first electrode has a first surface, and the second electrode has a second surface facing the first surface. The first surface includes a first central area; a first substrate placing area for placing |
| 7593610 |
Multi-mode optical coherence device and fabrication method thereof |
September 22, 2009 |
| In an MMI device with which a plurality of narrow width single-mode waveguides are provided at both ends of a multimode waveguide M, and light introduced into one single-mode waveguide on the input side is interfered in the multimode waveguide to be emitted from two single-mode waveg |
| 7592690 |
Semiconductor device including semiconductor elements mounted on base plate |
September 22, 2009 |
| A semiconductor device including a first semiconductor element mounted on a first surface of a base plate, wherein solder balls are formed on a second opposite surface of the base plate such that the second opposite surface includes an area without solder balls. At least one second s |
| 7592274 |
Method for fabricating semiconductor element |
September 22, 2009 |
| A method for fabricating a semiconductor element includes the steps of: providing a semiconductor wafer; forming an oxide layer on the semiconductor wafer; carrying out a high-temperature thermal treatment to the semiconductor wafer at least once, wherein the high-temperature thermal |
| 7592129 |
Method for forming photoresist pattern and method for manufacturing semiconductor device |
September 22, 2009 |
| With the objective of suppressing resist pattern collapse generated at dry etching, energy rays are applied to a photoresist structure including an antireflection film provided on a base and a resist pattern brought into contact with the antireflection film, the resist pattern being a |
| 7590891 |
Debugging circuit and a method of controlling the debugging circuit |
September 15, 2009 |
| In a debugging circuit and a controlling method of the debugging circuit, a mode judgment signal is generated which indicates that a central processing unit (CPU) is preparing to debug a predetermined program. Responsive to the mode judgment signal, a monitoring signal is generated i |
| 7589586 |
High frequency signal detection circuit |
September 15, 2009 |
| A high frequency signal detection circuit includes an input terminal for a high frequency signal to be detected, a switch transferring the high frequency signal as intermittent ringing signal to a first node in response to a pulse signal whose frequency is lower than that of the high |
| 7586471 |
Drive circuit and drive method for panel display device |
September 8, 2009 |
| Disclosed is a drive circuit for a panel display device for driving light-emitting devices arranged at respective intersections between a plurality of data lines and a plurality of scan lines. This drive circuit includes a voltage control circuit for charging the light-emitting devic |
| 7586337 |
Circuit for switching between two clock signals independently of the frequency of the clock sign |
September 8, 2009 |
| A clock switching circuit for switching between plural clock signals includes a selector for outputting a first control signal when a low speed clock is selected by a selection signal with a permission signal halted, and a second control signal when a high speed clock is selected by |
| 7586181 |
Semiconductor device and method for manufacturing |
September 8, 2009 |
| A semiconductor device and method has trenches for raising reliability. An electrode pad, with a protective film and an interlayer film which form an opening on top, are on a substrate. A rewiring pattern in contact with the electrode pad at this opening is on top of the interlayer film. |
| 7585733 |
Method of manufacturing semiconductor device having multiple gate insulation films |
September 8, 2009 |
| A method of manufacturing a semiconductor device includes the steps of: preparing a semiconductor substrate having first and second element forming regions, the first and second element forming regions divided by an element separating insulation film; forming a first gate insulation |
| 7582972 |
Semiconductor device and fabrication method thereof |
September 1, 2009 |
| A semiconductor device includes a semiconductor substrate with circuit elements and electrode pads formed on one surface. This surface is covered by a dielectric layer with openings above the electrode pads. A metal layer is deposited on the dielectric layer and patterned to form a c |
| 7582168 |
Method and apparatus for cleaning semiconductor wafer |
September 1, 2009 |
| A wafer is placed on a rotatable stage to clean an upper surface of the wafer with a cleaning liquid while the stage and wafer are rotating. A cup-shaped cover is provided over the upper surface of the wafer. A frame portion of the cover is brought into close contact with a circumferenti |
| 7579851 |
Operation voltage supply apparatus and operation voltage supply method for semiconductor device |
August 25, 2009 |
| The voltage application probe (54) and the voltage measurement probe (56) are connected to the voltage application pad (74) and the voltage measurement pad (76) of the semiconductor device (70). The voltage application pad (74) and the voltage measurement pad (76) are connected by th |
| 7579688 |
Heat radiation structure of semiconductor device, and manufacturing method thereof |
August 25, 2009 |
| The invention of the present application provides a heat radiation structure of a semiconductor device, and includes a substrate having, on a surface thereof, a first area on which the semiconductor device is mounted, and a second area which surrounds the first area. The semiconducto |
| 7579640 |
Hybrid memory device |
August 25, 2009 |
| A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the l |
| 7579264 |
Method for manufacturing an electrode structure of a MOS semiconductor device |
August 25, 2009 |
| A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a semiconductor substrate, forming a laminated body on the first insulating film that includes a polysilicon film and a metal film that is separated from the insulating film by me |
| 7576731 |
Information processing apparatus and a method of controlling the same that detects position coor |
August 18, 2009 |
| An information processing apparatus has a resistance film type touch panel generating position coordinate data at a predetermined sampling interval, a liquid crystal display panel driven by a liquid crystal drive voltage, a first control circuit having a first generating circuit generati |
| 7576431 |
Semiconductor chip package and multichip package |
August 18, 2009 |
| The present invention provides a multichip package wherein a plurality of semiconductor chip packages (100) in each of which first electrode pads (16a) provided in a main surface of a semiconductor chip, and first bonding pads (20a) and first central bonding pads (18a) formed in an u |
| 7576377 |
Ferroelectric memory device and manufacturing method thereof |
August 18, 2009 |
| A ferroelectric memory device includes a semiconductor substrate, a first insulating film, a plurality of first and second plugs which extend through the first insulating film, conductive hydrogen barrier films, ferroelectric capacitor structural bodies, a first insulating hydrogen b |
| 7573968 |
Data transmission circuit with serial interface and method for transmitting serial data |
August 11, 2009 |
| A data transmission circuit includes a first clock generating circuit that generates a first clock; a second clock generating circuit that generates a second clock, which is different from the first clock; a serial interface circuit that supplies an output signal in synchronization with |
| 7573314 |
Level shift circuit |
August 11, 2009 |
| The present invention provides a level shift circuit that can reliably cut off the path of a through current regardless of the state of supply of power to plural circuit sections that operate by different power supplies. The level shift circuit is provided with an input circuit secti |
| 7573304 |
Input/output circuit and input/output device |
August 11, 2009 |
| An input/output circuit has an output terminal, a first transistor, a second transistor, a pulse generator, and a bias circuit. The first transistor drives the output terminal based on a predetermined signal. The second transistor controls a potential of the gate of the first transis |
| 7572333 |
Method for manufacturing semiconductor device |
August 11, 2009 |
| A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a predetermined interval, and having support portions which respectively support the sapphire substrat |
