| Patent Number |
Title Of Patent |
Date Issued |
| 7450626 |
Lasers that operate independently of temperature |
November 11, 2008 |
| Apparatus, methods, systems and devices for providing a temperature independent laser by determining a temperature dependence of a lasing wavelength, selecting the lasing wavelength having minimal temperature dependence and constraining the lasing wavelength of the laser device to th |
| 7194049 |
Digital automatic level control system |
March 20, 2007 |
| A digital automatic level control system employs delay elements, which enable information about a signal parameter from the past, present and future to be processed to provide an optimal gain that can be used to level rapidly varying signals, such as bursty signals. As digital time s |
| 7190288 |
Look-up table delta-sigma conversion |
March 13, 2007 |
| Signal conversion is implemented employing a memory system operating as a look-up table that stores a plurality of sets of output samples associated with each of a plurality of respective input samples. The look-up table thus can generate a corresponding set of output samples in resp |
| 7182975 |
Moisture barrier sealing of fiber optic coils |
February 27, 2007 |
| A method of applying a moisture barrier seal to a fiber optic coil includes mounting a fiber optic coil in a vacuum deposition chamber, so as to expose a large exterior surface area of the fiber optic coil to an interior portion of the deposition chamber. The method further includes |
| 7088743 |
Laser source comprising amplifier and adaptive wavefront/polarization driver |
August 8, 2006 |
| A hybrid laser source including a solid state laser driven by an array of fiber laser amplifiers, the inputs of which are controllable in phase and polarization, to compensate for distortions that arise in the solid state laser, or to achieve desired output beam properties relating to di |
| 7084722 |
Switched filterbank and method of making the same |
August 1, 2006 |
| An integrated switched filterbank and method of forming an integrated switched filterbank is disclosed. One embodiment includes a switched filterbank that includes an active subassembly, a plurality of active devices mounted to the active subassembly, and a stripline filter subassemb |
| 7084040 |
Method for growth of group III-V semiconductor material on a dielectric |
August 1, 2006 |
| Formation of a regrowth layer of a Group III V semiconductor material is facilitated by prior formation of an intermediate layer, selected primarily for its smooth morphology properties. The intermediate layer is formed over an underlying substrate and over a dielectric layer formed |
| 7068998 |
Methodology for the detection of intrusion into radio frequency (RF) based networks including ta |
June 27, 2006 |
| The present invention provides strategies for detecting intrusions in wireless environments, and the strategies are based on innovative applications of information analysis as well as other information correlating techniques. The key to detecting intrusions in a RF based environment |
| 7039126 |
M-ary signal constellations suitable for non-linear amplification |
May 2, 2006 |
| A communications system (10) which utilizes an M-ary QAM signal constellation suitable for non-linear applications. The communications system includes a modulator (18) for utilizing the M-ary constellation to implement the modulation. The M-ary constellation is a circular constellati |
| 7038293 |
Dissipation of a charge buildup on a wafer portion |
May 2, 2006 |
| An apparatus in one example comprises a wafer portion that comprises a conduction layer. Upon exposure of the conduction layer during a etch of the wafer portion, the conduction layer serves to dissipate a portion of a charge buildup on the wafer portion during an etch of the wafer p |
| 7038256 |
Low turn-on voltage, non-electron blocking double HBT structure |
May 2, 2006 |
| A double heterojunction bipolar transistor structure having desirable properties of a low base-emitter turn-on voltage and no electron blocking discontinuities in the base-collector junction. These properties are achieved by selecting base, emitter and collector materials to provide a |
| 6593695 |
Broadband, inverted slot mode, coupled cavity circuit |
July 15, 2003 |
| A coupled cavity circuit for a microwave electron tube comprises at least two resonant cavities adjacent to each other. An electron beam tunnel passes through the coupled cavity circuit to allow a beam of electrons to pass through and interact with the electromagnetic energy in the cavit |
| 6489001 |
Protective impact-resistant thermal insulation structure |
December 3, 2002 |
| A protective structure for thermal insulation and impact resistance, and especially suited for bonded application to the exterior of aircraft including spacecraft to protect the craft from high temperatures generated by exhaust gases and by atmospheric re-entry. The structure includes |
| 6462474 |
Grooved multi-stage depressed collector for secondary electron suppression |
October 8, 2002 |
| A linear beam device comprises a cathode and an anode spaced therefrom, with the anode and cathode being operable to form and accelerate an electron beam. An RF interaction region having a drift tube is arranged relative to the anode to permit the electron beam to pass therethrough. A |
| 6016007 |
Power electronics cooling apparatus |
January 18, 2000 |
| A semiconductor cooling arrangement wherein a semiconductor is affixed to a thermally and electrically conducting carrier such as by brazing. The coefficient of thermal expansion of the semiconductor and carrier are closely matched to one another so that during operation they will not be |
| 5619206 |
Secondary radar digital monopulse receiving apparatus and method |
April 8, 1997 |
| A secondary radar uses monopulse reception techniques to improve the estimate of the aircraft position and to improve the reliability of the reply decoding process. Digital signal processing techniques are utilized to replace the analog circuit used in the prior implementations. The |
| 5611955 |
High resistivity silicon carbide substrates for high power microwave devices |
March 18, 1997 |
| A substrate for use in semiconductor devices, fabricated of silicon carbide and having a resistivity of greater than 1500 Ohm-cm. The substrate being characterized as having deep level impurities incorporated therein, wherein the deep level elemental impurity comprises one of a selected |
| 5590536 |
Bypass cryogenic current leads employing high temperature superconductors |
January 7, 1997 |
| A cryogenic bypass current lead to bypass quenched magnets in a string of magnets in a superconducting super collider comprises a HTSC section interposed between a lower conductive body terminal and the conductive of the lead is described. |
| 5532485 |
Multispectral superconductive quantum detector |
July 2, 1996 |
| An array of superconductive quantum detectors (SQD) with current biased SQUID flowing in one direction from fifty percent of the detectors and flowing in the opposite direction for the other fifty percent. The SQD in one embodiment has a serpentine pattern loop and minimal cross-sectiona |
