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New Japan Radio Co;, Ltd. Patents
Assignee:
New Japan Radio Co;, Ltd.
Address:
Tokyo-Tu, JP
No. of patents:
38
Patents:




Patent Number Title Of Patent Date Issued
7366312 Artificial stereophonic circuit and artificial stereophonic device April 29, 2008
An artificial stereophonic circuit which includes a monophonic signal input terminal, a signal output terminal of one of an L channel and an R channel which are connected to the signal input terminal, a phase-shifting circuit having an input side connected to the signal input termina
7352017 Nitride semiconductor device and manufacturing method thereof April 1, 2008
A nitride semiconductor device enabiling to supress current collapse and manufacturing method thereof including a III-V group nitride semiconductor layer formed of III group elements includes at least one element from the group consisting of gallium, aluminum, boron and indium, and V
7326638 Method for manufacturing semiconductor device February 5, 2008
An electronic circuit is formed on a semiconductor substrate and electrode pads are formed, which are formed by disposing electrode terminals of the electronic circuit through interconnections on a surface of the semiconductor substrate. After grinding a back surface of the semicondu
7304554 U-shaped microwave and millimeter wave resonator filter December 4, 2007
A filter including a body on which a waveguide groove, whose one surface is open, is formed in a U-shape and a plurarity of inductive resonant windows are provided along a longitudinal direction of the waveguide groove at a predetermined interval in the waveguide groove; and a cover
7304330 Nitride semiconductor device December 4, 2007
A nitride semiconductor device, which includes a III-V Group nitride semiconductor layer being composed of a III Group element consisting of at least one of a group containing of gallium, aluminum, boron and indium and V Group element consisting of at least nitrogen among a group con
7250986 External output video signal processor July 31, 2007
The object of the invention is offering an external output video signal processor, which does not need coupling capacitor or clamping circuit. A system controller outputs a video signal by which the sync. tip level and the pedestal level were fixed to a predetermined value. It was consid
7195996 Method of manufacturing silicon carbide semiconductor device March 27, 2007
A manufacturing method for forming a region into which impurity ions are implanted, and an electrode is coupled to the region, in a self-aligned manner. An oxide film is formed on an n-type semiconductor layer composed of a silicon carbide semiconductor, and then the oxide film on region
7038387 Pulse magnetron with different anode and cathode radiuses May 2, 2006
A pulse magnetron includes a cylindrical shell anode, a cathode provided at the center of the anode having a number of vanes mounted radially on an inner wall of the cylindrical anode shell, and a pair of pole pieces provided for applying a magnetic field to an interaction space where th
7026858 Switch semiconductor integrated circuit April 11, 2006
A switch semiconductor integrated circuit having a switch FET for controlling passage of a high-frequency signal so that the switch FET is switched between on-operation and off-operation. The switch semiconductor integrated circuit includes a logic control section using of an inverter
6985042 Magnetron January 10, 2006
The object to the present invention is to provide a magnetron which can reduce spurious oscillation such as the .pi.-1 mode which presents a problem particularly in magnetrons and can reduce spurious radiations without placing filters. The magnetron of the present invention includes
6967528 Variable gain amplifier November 22, 2005
The present invention is a variable gain amplifier for amplifying a radio frequency signal by using a field effect transistor for signal amplification. The variable gain amplifier includes: an input impedance correcting means for correcting the input impedance when varying the gain a
6959222 Accelerator engine for processing functions used in audio algorithms October 25, 2005
An engine for processing functions used in audio algorithms. The engine runs in parallel with a digital signal processor (DSP) in an audio chip to increase performance for that chip. Functions performed by the engine include biquad filtering and inverse discrete cosine transform (IDCT)
6922339 Heat dissipating structure of printed circuit board and fabricating method thereof July 26, 2005
A heat dissipating structure of a printed circuit board on which a circuit pattern is provided so that a heat generating part can be mounted, and which has a through hole formed at a site where the heat generating part is mounted from a surface on which the heat generating part is mounte
6686647 Gunn diode and method of manufacturing the same February 3, 2004
Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided.In a Gunn diode of the present invention, contact layers are interposing an active layer. An anode electrode and a cathod
6600483 Driving circuit July 29, 2003
The present invention relates to a driving circuit used suitably for driving a capacitive load such as liquid crystal panel. The driving circuit of the present invention comprises a differential amplifying circuit, an output circuit and current control circuit. The output circuit is
6559582 Cathode and process for producing the same May 6, 2003
There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400.degree. C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a
6514832 Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn diode and structure for assemb February 4, 2003
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage
6426511 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assemb July 30, 2002
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage
6420821 Cathode for magnetron July 16, 2002
A cathode for a magnetron having concave/convex portions on a surface of a cylindrical base metal with thermionic emitting materials being fixedly attached to concave portions from among the concave/convex portions. The convex portions of the concave/convex portions are arranged to be
6407614 Semiconductor integrated switching circuit June 18, 2002
The semiconductor integrated switching circuit S1 employed in a dual-band mobile phone comprises the first through fourth field effect transistor 1, 2, 3, 4 by which electrical connection between either of the first through fourth input/output terminal 22 through 25 and the common input-
6405227 Digital crossover and parametric equalizer June 11, 2002
A DSP-based and multi-channel digital filter chip providing crossover filtering and parametric equalization. Crossovers can be low-pass, high-pass, or band-pass filters with programmable cutoff frequencies. Each equalizer band has independently adjustable center frequency band, and l
6369663 NRD guide Gunn oscillator April 9, 2002
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage
6344658 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assemb February 5, 2002
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage
6118219 AC driver having three power supply voltages including an internally generated voltage September 12, 2000
The present invention relates to an improvement in an EL driver including a second power supply voltage producer for producing second supply voltage for use in driving an EL lamp using a battery serving as a first power source, a third supply voltage producer for producing third supply v
6057569 Diode limiter device May 2, 2000
The present invention provides a diode limiter device in which a first penetration hole is formed on a wall surface of an H surface; the PIN diode is supported by the PIN diode mounting side of the post with the PIN diode being electrically connected to the waveguide at the first pen
6049184 Method and arrangement for controlling a current April 11, 2000
To control the current through a winding interconnected in an H-bridge to control e.g. a stepping motor, at the beginning of each chopper period, the H-bridge is kept in its slow demagnetization state during predetermined interval (t1-t2). Then, just before, at or just after the end
5982810 Signal extraction circuit and correlator utilizing the circuit November 9, 1999
A correlator used for spread spectrum communications which reduces consumed power. A signal extraction circuit (6) is provided for directly extracting phase information from an input signal which expresses two values of code data by each phase of a plurality of cycles. A signal transferr
5614447 Method for heat-treating a semiconductor body March 25, 1997
A method for heat-treating a semiconductor body comprising steps of: (a) disposing a susceptor on one surface of the semiconductor body, and disposing a protection plate in such a manner that the other surface of the semiconductor faces to a surface the protection plate, (b) heat-tre
5494861 Method for heat-treating a compound semiconductor February 27, 1996
A method for heat-treating a compound semiconductor comprising a step of heat-treating a susceptor in a manner as to be disposed on a surface of the compound semiconductor with oposing each other, the susceptor comprising a compound of nitrogen and a group III element such as aluminum
5178683 Microwave plasma CVD apparatus January 12, 1993
A microwave CVD apparatus comprises a rectangular applicator with microwave inlets, a bell jar with an inlet and an outlet for reaction gas arranged in the applicator, and a sample-receiving table. Reaction gas is introduced into the bell jar and plasma of the reaction gas is generated
5039918 Electrodeless microwave-generated radiation apparatus August 13, 1991
An electrodeless microwave-generated radiation apparatus includes a microwave cavity wall made of metal material defining a microwave cavity, a lamp arranged in the microwave cavity containing emission material, a microwave generator supplying microwaves for exciting the emission mat
4894624 Combined amplitude modulator and frequency converter January 16, 1990
An amplitude modulator for mixing multifrequency signals characterized in that there are combined a mixer for producing a mixed signal by mixing not less than two alternating current signals with different frequency and a signal generator for the modulator to modulate the mixed signal by
4803446 Low noise microwave amplifier February 7, 1989
A low noise microwave amplifier wherein a length of a pair of broad or wider walls inside the rectangular waveguide is shortened at least near a portion where a probe for introducing a microwave signal into the amplifying portion is provided. A cutoff frequency of the waveguide near
4691376 Frequency converter September 1, 1987
A frequency converter for use in a 4 GHz-band comprising a printed circuit board and a shield case. The printed circuit board is provided in the shield case and composed of an input terminal, and successively, a circuit of low noise amplifier, a band pass filter, a mixer and a circuit of
4686413 Cathode for magnetron August 11, 1987
A method of manufacturing a cathode for magnetron comprises a cathode sleeve formed as a hollow cylinder, a heater inside the sleeve, two end shields formed around the sleeve at a prescribed interval and an electron emitting material applied around the sleeve between both end-shields,
4660572 Container, for fixing an animal to be tested in a biochemical test April 28, 1987
A container for fixing an animal to be tested in a biochemical test comprises a tubular portion for covering a head of the animal, and a body portion for covering a body of the animal, wherein a microwave is applied to the tubular portion projected into an applicator, the container being
4616120 Microwave-heating apparatus having means for measuring reflection coefficient under low power op October 7, 1986
A microwave-heating apparatus comprising a high-power microwave oscillator which rises in its output power in a shorter time required than a time for irradiating a testing animal, a waveguide connected to the high-power microwave oscillator, a measuring member for measuring reflection
4309605 Photo-reflective sensor January 5, 1982
A photo-reflective sensor comprising a light-emitting element and a light-detecting element adapted to receive the light from the light-emitting element after the light has been reflected from an article to be detected as modulated by a variation in the reflectance of the article. Th

 
 
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