| Patent Number |
Title Of Patent |
Date Issued |
| 7405605 |
Storage elements using nanotube switching elements |
July 29, 2008 |
| Data storage circuits and components of such circuits constructed using nanotube switching elements. The storage circuits may be stand-alone devices or cells incorporated into other devices or circuits. The data storage circuits include or can be used in latches, master-slave flip-fl |
| 7394687 |
Non-volatile-shadow latch using a nanotube switch |
July 1, 2008 |
| A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in r |
| 7385266 |
Sensor platform using a non-horizontally oriented nanotube element |
June 10, 2008 |
| Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Und |
| 7375369 |
Spin-coatable liquid for formation of high purity nanotube films |
May 20, 2008 |
| Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nan |
| 7365632 |
Resistive elements using carbon nanotubes |
April 29, 2008 |
| Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of th |
| 7342818 |
Hybrid circuit having nanotube electromechanical memory |
March 11, 2008 |
| A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides |
| 7339401 |
Nanotube-based switching elements with multiple controls |
March 4, 2008 |
| Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the na |
| 7335528 |
Methods of nanotube films and articles |
February 26, 2008 |
| Nanotube films and articles and methods of making the same. A conductive article includes an aggregate of nanotube segments which contact other nanotube segments to define a plurality of conductive pathways along the article. Segments may have different lengths and may be shorter than th |
| 7335395 |
Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, e |
February 26, 2008 |
| Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to create a non-woven fa |
| 7330709 |
Receiver circuit using nanotube-based switches and logic |
February 12, 2008 |
| Receiver circuits using nanotube based switches and logic. Preferably, the circuits are dual-rail (differential). A receiver circuit includes a differential input having a first and second input link, and a differential output having a first and second output link. First, second, thi |
| 7329931 |
Receiver circuit using nanotube-based switches and transistors |
February 12, 2008 |
| Receiver circuits using nanotube-based switches and transistors. A receiver circuit includes a differential input having a first and second input link, a differential output having a first and second output link, and first and second switching elements in electrical communication with |
| 7304357 |
Devices having horizontally-disposed nanofabric articles and methods of making the same |
December 4, 2007 |
| New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and |
| 7301802 |
Circuit arrays having cells with combinations of transistors and nanotube switching elements |
November 27, 2007 |
| Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, reference |
| 7298016 |
Electromechanical memory array using nanotube ribbons and method for making same |
November 20, 2007 |
| Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the el |
| 7294877 |
Nanotube-on-gate FET structures and applications |
November 13, 2007 |
| Nanotube on gate FET structures and applications of such, including n.sup.2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor |
| 7289357 |
Isolation structure for deflectable nanotube elements |
October 30, 2007 |
| Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is |
| 7288970 |
Integrated nanotube and field effect switching device |
October 30, 2007 |
| Hybrid switching devices integrate nanotube switching elements with field effect devices, such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In embodiments of the i |
| 7288961 |
Tri-state circuit using nanotube switching elements |
October 30, 2007 |
| Nanotube-based logic circuitry is disclosed. Tri-stating elements add an enable/disable function to the circuitry. The tri-stating elements may be provided by nanotube-based switching devices. In the disabled state, the outputs present a high impedance, i.e., are tri-stated, which state |
| 7280394 |
Field effect devices having a drain controlled via a nanotube switching element |
October 9, 2007 |
| Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source |
| 7274078 |
Devices having vertically-disposed nanofabric articles and methods of making the same |
September 25, 2007 |
| Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the cha |
| 7269052 |
Device selection circuitry constructed with nanotube technology |
September 11, 2007 |
| A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. The d |
| 7268044 |
Non-volatile electromechanical field effect devices and circuits using same and methods of formi |
September 11, 2007 |
| Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said |
| 7265575 |
Nanotube-based logic driver circuits |
September 4, 2007 |
| Nanotube based logic driver circuits. These include pull-up driver circuits, push-pull driver circuits, tristate driver circuits, among others. Under one embodiment, an off-chip driver circuit includes a differential input having first and second signal links, each coupled to a respe |
| 7264990 |
Methods of nanotubes films and articles |
September 4, 2007 |
| Nanotube films and articles and methods of making the same are disclosed. A conductive article includes an aggregate of nanotube segments in which the nanotube segments contact other nanotube segments to define a plurality of conductive pathways along the article. The nanotube segments |
| 7259410 |
Devices having horizontally-disposed nanofabric articles and methods of making the same |
August 21, 2007 |
| New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electromechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and |
| 7245520 |
Random access memory including nanotube switching elements |
July 17, 2007 |
| A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive nanotube, and a set |
| 7211854 |
Field effect devices having a gate controlled via a nanotube switching element |
May 1, 2007 |
| Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. |
| 7176505 |
Electromechanical three-trace junction devices |
February 13, 2007 |
| Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the first and second co |
| 7167026 |
Tri-state circuit using nanotube switching elements |
January 23, 2007 |
| Nanotube-based logic circuitry is disclosed. Tri-stating elements add an enable/disable function to the circuitry. The tri-stating elements may be provided by nanotube-based switching devices. In the disabled state, the outputs present a high impedance, i.e., are tri-stated, which state |
| 7164744 |
Nanotube-based logic driver circuits |
January 16, 2007 |
| Nanotube based logic driver circuits. These include pull-up driver circuits, push-pull driver circuits, tristate driver circuits, among others. Under one embodiment, an off-chip driver circuit includes a differential input having first and second signal links, each coupled to a respe |
| 7161403 |
Storage elements using nanotube switching elements |
January 9, 2007 |
| Data storage circuits and components of such circuits constructed using nanotube switching elements. The storage circuits may be stand-alone devices or cells incorporated into other devices or circuits. The data storage circuits include or can be used in latches, master-slave flip-fl |
| 7161218 |
One-time programmable, non-volatile field effect devices and methods of making same |
January 9, 2007 |
| One-time programmable, non-volatile field effect devices and methods of making same. Under one embodiment, a one-time-programmable, non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, dr |
| 7138832 |
Nanotube-based switching elements and logic circuits |
November 21, 2006 |
| Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is |
| 7115960 |
Nanotube-based switching elements |
October 3, 2006 |
| Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is |
| 7115901 |
Non-volatile electromechanical field effect devices and circuits using same and methods of formi |
October 3, 2006 |
| Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-def |
| 7113426 |
Non-volatile RAM cell and array using nanotube switch position for information state |
September 26, 2006 |
| Non-Volatile RAM Cell and Array using Nanotube Switch Position for Information State. A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor with first, secon |
| 7112493 |
Method of making non-volatile field effect devices and arrays of same |
September 26, 2006 |
| Methods of making non-volatile field effect devices and arrays of same. Under one embodiment, a method of making a non-volatile field effect device includes providing a substrate with a field effect device formed therein. The field effect device includes a source, drain and gate with a |
| 7112464 |
Devices having vertically-disposed nanofabric articles and methods of making the same |
September 26, 2006 |
| Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the cha |
| 7075141 |
Four terminal non-volatile transistor device |
July 11, 2006 |
| A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of m |
| 7071023 |
Nanotube device structure and methods of fabrication |
July 4, 2006 |
| Nanotube device structures and methods of fabrication. Under one embodiment, a method of forming a nanotube switching element includes forming a first structure having at least one output electrode, forming a conductive article having at least one nanotube, and forming a second struc |
| 7056758 |
Electromechanical memory array using nanotube ribbons and method for making same |
June 6, 2006 |
| Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the el |
| 7045421 |
Process for making bit selectable devices having elements made with nanotubes |
May 16, 2006 |
| A method is used to make a bit selectable device having nanotube memory elements. A structure having at least two transistors is provided, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. A trench is |
| 6995046 |
Process for making byte erasable devices having elements made with nanotubes |
February 7, 2006 |
| A method of making byte erasable devices having elements made with nanotubes. Under one aspect of the invention, a device is made having nanotube memory elements. A structure is provided having a plurality of transistors, each with a drain and a source with a defined channel region t |
| 6990009 |
Nanotube-based switching elements with multiple controls |
January 24, 2006 |
| Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the na |
| 6982903 |
Field effect devices having a source controlled via a nanotube switching element |
January 3, 2006 |
| Field effect devices having a source controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The drain |
| 6979590 |
Methods of making electromechanical three-trace junction devices |
December 27, 2005 |
| Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an upper surface of the |
| 6944054 |
NRAM bit selectable two-device nanotube array |
September 13, 2005 |
| A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor and a restore transistor with first, second and third nodes. Each cell further includes an electromechanica |
| 6942921 |
Nanotube films and articles |
September 13, 2005 |
| Nanotube films and articles and methods of making the same are disclosed. A conductive article includes an aggregate of nanotube segments in which the nanotube segments contact other nanotube segments to define a plurality of conductive pathways along the article. The nanotube segments m |
| 6924538 |
Devices having vertically-disposed nanofabric articles and methods of making the same |
August 2, 2005 |
| Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the cha |
| 6919592 |
Electromechanical memory array using nanotube ribbons and method for making same |
July 19, 2005 |
| Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electr |
