| Patent Number |
Title Of Patent |
Date Issued |
| RE34375 |
System for controlling apparatus for growing tubular crystalline bodies |
September 14, 1993 |
| A control system for controlling the operation of an apparatus for growing tubular crystalline bodies. The control system comprises a weight sensor for measuring the weight of the crystal, a length sensor for measuring the length of the crystal, a pressure sensor for measuring the pressu |
| 5698451 |
Method of fabricating contacts for solar cells |
December 16, 1997 |
| A solar cell fabrication procedure is described in which a silicon substrate having a layer of silicon nitride on one side is selectively coated with a paste that contains silver metal and a glass frit. Upon heating to a temperature in excess of 760 degrees C. for a time not exceedin |
| 5411897 |
Machine and method for applying solder paste to electronic devices such as solar cells |
May 2, 1995 |
| A machine and method are provided for applying a solder paste to a solar cell or other semiconductor device. The machine comprises (1) a conveyor means having at least one cell-holding means for holding a photovoltaic solar cell, (2) drive means for moving the conveyor means stepwise so |
| 5320684 |
Solar cell and method of making same |
June 14, 1994 |
| An improved photovoltaic cell and a method for making such cells is provided. In a generic sense, the preferred method comprises the step of (1) applying a coating of an aluminum metal paste onto the rear surface of the substrate in a suitable rear contact pattern, (2) applying a layer o |
| 5279682 |
Solar cell and method of making same |
January 18, 1994 |
| An improved solar cell of the type including a semiconductor substrate having a shallow p-n junction adjacent its front surface, a rear electrode affixed in adherent mechanical and electrical contact with the rear surface of the semiconductor substrate, and a front generally grid-shaped |
| 5270248 |
Method for forming diffusion junctions in solar cell substrates |
December 14, 1993 |
| Silicon solar cells are made by subjecting semiconductor substrates to a diffusion junction forming process wherein a liquid source material containing a selected dopant is sprayed onto one side of the substrates, and thereafter the substrates are fired in an oxygen-containing enviro |
| 5228924 |
Photovoltaic panel support assembly |
July 20, 1993 |
| A solar energy power source is provided comprising at least two flat photovoltaic panels disposed in co-planar side-by-side relation and an improved support structure for supporting the panels for pivotal movement on a pivot axis that extends transversely of the panels, the improved |
| 5178685 |
Method for forming solar cell contacts and interconnecting solar cells |
January 12, 1993 |
| Photovoltaic cells with silver-rich thick film electrical contacts having superior thermal aging properties are disclosed. The silver-rich contacts are formed by firing a silver ink or paste wherein substantially all of the silver in the ink or paste before firing is in the form of spher |
| 5156978 |
Method of fabricating solar cells |
October 20, 1992 |
| A method and apparatus for producing crystalline substrate for use in fabricating solid state electronic devices. A hollow crystalline body is grown from a melt containing a dopant and a P-N junction is formed in said crystalline body as it is being grown. Then the hollow body is severed |
| 5151386 |
Method of applying metallized contacts to a solar cell |
September 29, 1992 |
| A method of applying metallized contacts to the surfaces of semiconductor substrates using a conventional pad printing device. Standard screen printing inks diluted 2-30 weight percent with an appropriate solvent have been satisfactorily used to accomplish the method. For certain contact |
| 5151377 |
Method for forming contacts |
September 29, 1992 |
| A method and apparatus are provided for forming grid electrodes for solar cells, the method and apparatus essentially involving dispensing a viscous ink through a hollow pen tip onto a selected horizontally oriented solar cell blank, so that the discharged ink forms a ribbon or line on t |
| 5118362 |
Electrical contacts and methods of manufacturing same |
June 2, 1992 |
| Nickel is introduced into the construction of the rear electrical contacts on silicon solar cells to reduce contact resistance between the aluminum contact material and the silver pads. In one embodiment, the nickel is applied as an intermediate layer between the silicon substrate and ea |
| 5110369 |
Cable interconnections for solar cell modules |
May 5, 1992 |
| A terminal connection for a solar cell device includes a conductive terminal strip protruding from the rear wall of the device and provided with a hole. An insulating convex/concave member is secured to the rear wall and is provided with an aperture which is positioned so that the hole |
| 5106763 |
Method of fabricating solar cells |
April 21, 1992 |
| A method and apparatus for producing crystalline substrates for use in fabricating solid state electronic devices. A hollow crystalline body is grown from a melt containing a dopant and a P-N junction is formed in said crystalline body as it is being grown. Then the hollow body is severe |
| 5102494 |
Wet-tip die for EFG cyrstal growth apparatus |
April 7, 1992 |
| A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the in |
| 5098229 |
Source material delivery system |
March 24, 1992 |
| A system for repeatedly supplying a predetermined quantity of solid particulate material, e.g. solid, spherical silicon particles, to a location remote from the area where the particulate material is stored. The system includes a container for storing solid particulate material, a re |
| 5085728 |
System for controlling crystal growth apparatus and melt replenishment system therefor |
February 4, 1992 |
| A control system for controlling the operation of a system for replenishing the melt in the crucible of an apparatus for growing tubular crystalline bodies of a selected material. The melt replenishment system comprises a container for storing solid particles of said selected material an |
| 5082791 |
Method of fabricating solar cells |
January 21, 1992 |
| A solar cell fabrication procedure is described in which an excimer laser is used to cut a trench in a flat solar cell substrate so as to electrically isolate front and back regions of the substrate. The trench is cut around the perimeter of the cell. The advantage of using an excimer |
| 5074920 |
Photovoltaic cells with improved thermal stability |
December 24, 1991 |
| Photovoltaic cells with silver-rich thick film electrical contacts and superior thermal aging properties are disclosed. Electrical wires are bonded to the silver-rich thick film contacts using a tin and silver solder paste comprising between about 96% tin/4% silver and 98% tin/2% sil |
| 5037622 |
Wet-tip die for EFG crystal growth apparatus |
August 6, 1991 |
| A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the in |
| 5011567 |
Method of fabricating solar cells |
April 30, 1991 |
| A method of forming a metallization pattern on a solar cell substrate having an outer layer of a selected dielectric such as silicon nitride, silicon dioxide, or glass, by removing selected portions of the dielectric layer with a laser beam. This laser exposure drives portions of the P/N |
| 5011565 |
Dotted contact solar cell and method of making same |
April 30, 1991 |
| A method of applying metallized contacts to a solar cell substrate, the front surface of which is covered with a dielectric layer. The method involves forming a plurality of apertures extending through the dielectric layer using a laser beam and defining a grid-shaped electrode. The |
| 5010040 |
Method of fabricating solar cells |
April 23, 1991 |
| A method of forming a metallization pattern on a substrate used in the fabrication of a solar cell or other semiconductor device. The metallization pattern is formed by (1) hydrogen passivating a silicon substrate having a P/N junction formed therein adjacent one surface of the subst |
| 4989059 |
Solar cell with trench through pn junction |
January 29, 1991 |
| A solar cell fabrication procedure is described in which a trench is cut in the substrate so as to electrically isolate front and back regions of a flat solar cell. The trench is preferably cut around the perimeter of the rear side of the cell. The trench is preferably formed by an excim |
| 4968380 |
System for continuously replenishing melt |
November 6, 1990 |
| A system for continuously supplying solid silicon particles to an apparatus for growing hollow, tubular crystalline bodies. The system includes a container for storing solid silicon particles, a vibratory, pneumatic, or other device for causing the particles to exit the container through |
| 4945065 |
Method of passivating crystalline substrates |
July 31, 1990 |
| A method of bulk passivating a crystalline or polycrystalline substrate made from silicon, germanium, gallium arsenide or other III-V compounds, and II-VI compounds by exposing the substrate to a fluorine ion beam created by a Kaufman ion source. The Kaufman ion source is controlled so |
| 4937053 |
Crystal growing apparatus |
June 26, 1990 |
| An apparatus and process are disclosed for growing tubular crystalline bodies according to the Edge defined, Film-Fed Growth (EPG) process, wherein the apparatus has at least one exterior passage (240) and at least oen interior passage (245) formed in its crucible die assembly (200) and |
| 4936947 |
System for controlling apparatus for growing tubular crystalline bodies |
June 26, 1990 |
| A control system for controlling the operation of an apparatus for growing tubular crystalline bodies. The control system comprises a weight sensor for measuring the weight of the crystal, a length sensor for measuring the length of the crystal, a pressure sensor for measuring the pressu |
| 4751191 |
Method of fabricating solar cells with silicon nitride coating |
June 14, 1988 |
| A process of manufacturing silicon solar cells with efficiencies of between about 12.5% and about 16.0% is described, the method being characterized by forming a P/N junction adjacent the front surface of a silicon substrate, subjecting the front surface of the substrate to a selected |
| 4721688 |
Method of growing crystals |
January 26, 1988 |
| The invention comprises an improved method of growing crystalline bodies from a melt. The method involves providing (1) a crucible for containing a melt having a plurality of first and second grooves of capillary size formed in first and second opposite side walls thereof respectively, a |
| 4711695 |
Apparatus for and method of making crystalline bodies |
December 8, 1987 |
| An improved apparatus and method is disclosed for use in a system for growing a hollow tubular body of crystalline material by growing the body from the end of a die member, whereby the hollow tubular body can be cut lengthwise along predetermined lines of the body to provide separate |
| 4691077 |
Antireflection coatings for silicon solar cells |
September 1, 1987 |
| An improved optical match to a subsequently-formed antireflection overcoating is achieved by providing a silicon solar cell substrate with an altered surface layer that is formed by an ion-beam process, and has a refractive index between about 3.4 and about 3.6 at 633 nm and between |
| 4661324 |
Apparatus for replenishing a melt |
April 28, 1987 |
| Apparatus for replenishing a melt while a crystal growing operation is in process. The apparatus comprises an elongated hollow housing member having an open top end and a closed bottom end. A vertically movable support means for supporting a charge of source material, to be added to the |
| 4650695 |
Method of fabricating solar cells |
March 17, 1987 |
| An improvement to the process of passivation of polycrystalline silicon using a broad beam ion source wherein a controlled flow, greater in volume than the background level, of a low molecular weight hydrocarbon vapor is introduced into the vacuum system of the Kaufman-type ion source us |
| 4647437 |
Apparatus for and method of making crystalline bodies |
March 3, 1987 |
| An improved apparatus and method is disclosed for use in a system for growing a hollow tubular body of crystalline material by growing the body from the end of a die member, whereby the hollow tubular body can be cut lengthwise along predetermined lines of the body to provide separate |
| 4617722 |
Method for electrically interconnecting solar cells |
October 21, 1986 |
| A method for electrically interconnecting a plurality of solar cells in series using a multi-faced drum, a first bus spool having an associated first bus strip, and a second bus spool having an associated second bus strip, wherein the method involves placing a solar cell on the then- |
| 4612698 |
Method of fabricating solar cells |
September 23, 1986 |
| A solar cell fabrication procedure is described which is characterized by (1) forming a front surface mask in the configuration of the front surface electrodes, (2) a passivation step which, inter alia, results in the formation of an altered silicon substrate surface layer in the areas n |
| 4609565 |
Method of fabricating solar cells |
September 2, 1986 |
| A solar cell fabrication procedure is described which is characterized by (1) removal of the front surface electrode plating mask after preliminary metallization of the front surface electrodes, (2) a passivation step which, inter alia, results in the formation of an altered silicon |
| 4557037 |
Method of fabricating solar cells |
December 10, 1985 |
| A solar cell fabrication procedure is described in which a hydrogen ion passivation step is used to form, inter alia, an altered silicon substrate surface layer to which immersion plated nickel will not readily adhere. The altered surface layer is formed by shadow casting an ion beam in |
| 4544528 |
Apparatus for growing tubular crystalline bodies |
October 1, 1985 |
| Apparatus for growing hollow tubular crystalline bodies from the melt includes, in a preferred embodiment, a capillary die of the desired shape, a seed holder having a cross section of similar shape and to which a plurality of elongate seeds may be attached, and an inner after heater of |
| 4451969 |
Method of fabricating solar cells |
June 5, 1984 |
| A solar cell fabrication procedure is described which is characterized by (1) formation of a "polysilazane" coating on a silicon substrate, (2) photo-lithography of the polysilazane coating to form a plating mask pattern, (3) a heating step which removes residual photoresist and conv |
| 4443411 |
Apparatus for controlling the atmosphere surrounding a crystal growth zone |
April 17, 1984 |
| Method and apparatus for using a gas mixture containing an additive gas capable of beneficially altering the physical or chemical properties of a crystallized body grown from a melt by means of a shaping member. A suitable mixture of an inert gas and the additive gas is directed subs |
| 4440728 |
Apparatus for growing tubular crystalline bodies |
April 3, 1984 |
| Apparatus for growing hollow tubular crystalline bodies from the melt includes, in a preferred embodiment, a capillary die of the desired shape, a seed holder having a cross section of similar shape and to which a plurality of elongate seeds may be attached, and an inner after heater of |
| 4430305 |
Displaced capillary dies |
February 7, 1984 |
| An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die. |
| 4415401 |
Control of atmosphere surrounding crystal growth zone |
November 15, 1983 |
| The invention pertains to growth of silicon bodies from a melt and comprises enveloping the liquid/solid interface with a mixture of an inert gas and more than a trace amount of a carbon-containing gas. The carbon-containing gas may be a compound of carbon and oxygen such as CO or CO |
| 4402786 |
Adjustable heat shield assembly |
September 6, 1983 |
| A novel apparatus is disclosed for use in controlling in a known and predictable manner the temperature of the top surface of a capillary die and the adjacent meniscus during the growth of a crystalline body. The novel apparatus comprises an adjustable heat shield assembly with relat |
| 4390505 |
Crystal growth apparatus |
June 28, 1983 |
| A novel apparatus is disclosed for controlling the temperature of the top surface of the capillary die and the adjacent meniscus during growth of a crystalline body. The apparatus includes a tiltable heat shield located so that by appropriately positioning it about its tilt axis it is po |
| 4379202 |
Solar cells |
April 5, 1983 |
| A solar cell having a periodic front surface electrode is provided with a transparent cover chosen and configured to provide refractive discontinuities of the same spatial frequency as and aligned with the conductive grid. The refractive discontinuities are so controlled, through sel |
