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Mitsubishi Denki Kabushiki Kaisha Patents
Assignee:
Mitsubishi Denki Kabushiki Kaisha
Address:
Tokyo, JP
No. of patents:
20276
Patents:












Patent Number Title Of Patent Date Issued
RE43209 Speech coding apparatus and speech decoding apparatus February 21, 2012
A speech coding apparatus comprises a repetition period pre-selecting unit for generating a plurality of candidates for the repetition period of a driving excitation source by multiplying the repetition period of an adaptive excitation source by a plurality of constant numbers, respe
RE43190 Speech coding apparatus and speech decoding apparatus February 14, 2012
A speech coding apparatus comprises a repetition period pre-selecting unit for generating a plurality of candidates for the repetition period of a driving excitation source by multiplying the repetition period of an adaptive excitation source by a plurality of constant numbers, respe
RE42826 Rewritable optical disk with spare area and optical disk processing apparatus October 11, 2011
In order to enable recording and reproduction from optical disks with defect management formatted with different group configurations without changing the firmware of the conventional apparatus and to allow the size of the spare area to be specified at initialization, the position in
RE42185 Image retrieval system and image retrieval method March 1, 2011
When a retrieval condition of an attribute list is input from a user interface unit to a retrieval processing unit, the attribute list stored in an attribute list storing unit is retrieved in the retrieval processing unit. Thereafter, attribute information conforming to the retrieval
RE41997 Mobile telephone terminal with improved utility December 14, 2010
A mobile communication terminal includes timer for detecting the time of an incoming call, a caller number registration table for storing caller numbers, answer message ID numbers and time-dependent switching codes in relation to each other, the time-dependent control codes designating
RE41866 Semiconductor device and method of fabricating same October 26, 2010
There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (V.sub.th) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby reducing the amount of hydrogen
RE41729 Digital signal coding apparatus, digital signal decoding apparatus, digital signal arithmetic co September 21, 2010
In a bit stream syntax containing compressed video slice data for compressed video data of a slice structure, a slice header for compressed video slice data has attached thereto a slice start code, a register reset flag indicating whether a register value, which designates a status o
RE41330 Digital radio telephone for a digital mobile radio communication system May 11, 2010
A digital radio telephone comprises a radio portion for receiving a radio signal modulated by an encoded digital signal including control information, for demodulating and outputting the encoded digital signal, a control signal processing portion for decoding the demodulated encoded
RE41199 Color conversion device and method April 6, 2010
A color conversion device and method are provided in which six hues and inter-hue areas are corrected independently, and the conversion characteristics can be changed flexibly, and which does not require a large-capacity memory. Coefficients of second-order and first-order calculatio
RE40997 Spread spectrum communication transmitter and receiver, and CDMA mobile communication system and November 24, 2009
A transmitter used in a CDMA mobile communication system includes a pilot channel transmit unit which intermittently transmits a pilot signal in a spread spectrum formation, and traffic channel transmit units which respectively transmit data signals in respective traffic channels.
RE40910 Mobile communication terminal equipment usable for both satellite and terrestrial communications September 8, 2009
A mobile communication terminal equipment is mounted in a vehicle and can utilize both the satellite and terrestrial communication systems. The mobile communication terminal equipment includes a satellite transceiver and a portable set. The satellite transceiver has a satellite trans
RE40528 Voltage fluctuation compensating apparatus October 7, 2008
Voltage compensating circuits are connected serially to a power system, including capacitors each having different charging voltages (in relationship of approximately 2.sup.k (K=0, 1, 2, . . . ) times the smallest charging voltage value). The voltage compensating circuits convert DC
RE40417 Digital radio telephone for a digital mobile radio communication system July 1, 2008
A digital radio telephone comprises a radio portion for receiving a radio signal modulated by an encoded digital signal including control information, for demodulating and outputting the encoded digital signal, a control signal processing portion for decoding the demodulated encoded
RE40277 Digital radio telephone for a digital mobile radio communication system April 29, 2008
A digital radio telephone comprises a radio portion for receiving a radio signal modulated by an encoded digital signal including control information, for demodulating and outputting the encoded digital signal, a control signal processing portion for decoding the demodulated encoded
RE40210 Digital radio telephone for a digital mobile radio communication system April 1, 2008
A digital radio telephone comprises a radio portion for receiving a radio signal modulated by an encoded digital signal including control information, for demodulating and outputting the encoded digital signal, a control signal processing portion for decoding the demodulated encoded
RE40104 Plasma display panel with bus electrodes having black electroconductive material February 26, 2008
On a first substrate provided on a display surface of a plasma display panel, bus electrodes (12a, 14a) in X and Y electrode lines (12, 14) forming a pair of display electrode lines are formed with an Ag material containing a black additive (RuO.sub.2, etc.) by a screen printing. This
RE39599 Fuel supply apparatus May 1, 2007
A fuel supplying apparatus comprising a fuel pump 4 disposed within a fuel tank 1 for pumping fuel to an injector, a pressure regulator 6 for discharging an excess amount of fuel out of the fuel from the fuel pump 4 into the fuel tank 1 as an excess fuel, a fuel filter 5 disposed within
RE39109 Inverter circuit May 30, 2006
An inverter circuit to reduce a resistor for overcurrent detection and decrease the number of filters in an inverter circuit for supply polyphase power. Transistors each having a current detection terminal and a protective diode for regenerative current are adopted as switching eleme
RE38953 Insulated gate semiconductor device and method of manufacturing the same January 31, 2006
The RBSOA of a device is improved. A gate electrode (10) is linked to a p base layer (4) which is formed in a cell region (CR), and a p semiconductor layer (13) is formed to surround the cell region (CR). An emitter electrode (11) is connected to a top surface of a side diffusion reg
RE38871 Data receiving apparatus and method November 8, 2005
The present invention is to provide a decoder which detects a start code in a layered coded data stream on a layer basis for improving an error detecting function to reduce possible damaging effects, and replaces a detected start code with minor error by an appropriate start code to
RE38734 Semiconductor switching apparatus and method of controlling a semiconductor switching element May 17, 2005
An inductance in a path (R1) from a gate electrode (3G) of a GTO (3) through a gate driver (4) and a node (13) to a cathode electrode (3K) is determined so that a turn-off gain may be not more than 1. At a turn-off, a main current (I.sub.A) is entirely commutated from the gate electrode
RE38679 Data processor and method of processing data December 28, 2004
A second decoder (114) of an instruction decode unit (119) decodes an operation code for a multiply-add operation, and a second operation unit (117) receives two data stored in a register file (115) to perform the multiply-add operation. In parallel with the operations of the second
RE38390 Read/write head retract mechanism January 20, 2004
A retract mechanism for a magnet head which can read from and/or write to a disk, the mechanism includes a spring arm which supports the head and urges the head toward the disk. The spring arm includes a cam follower which rides along the surface of the cam, which has two parallel ho
RE38213 Data output circuit with reduced output noise August 12, 2003
A data output drive transistor is rendered conductive when the potential of an internal node attains an H level, whereby an output node is discharged to the level of ground potential. When the drive transistor is turned on, the output node is discharged to the level of ground potential a
RE38043 Lead frame March 25, 2003
In a lead frame, L-shaped support tapes are applied to inner leads and suspension leads. Ends of the support tapes are overlapped with each other at the suspension leads to form, together, a rectangular ring shape. Since the support tapes are L-shaped, when the overlapped portions are
RE37858 Motion compensation predicting encoding method and apparatus September 24, 2002
A motion compensation predicting coding apparatus includes a motion detector for comparing pixel data in an image signal with pixel data of the previous image signal to generate a motion vector. The motion vector is indicative of the displacement differences between the image signal and
RE37669 Method and apparatus for hand-off of call in progress April 23, 2002
A method and apparatus for a hand-off of a call-in-progress according to the present invention is arranged such that both a first ratio of a length of time, in which a measured value of SNR is below a predetermined "threshold" to a total length of the measuring time, and a second ratio o
RE36932 Semiconductor memory device operating stably under low power supply voltage with low power consu October 31, 2000
A semiconductor memory device of the present invention includes an internal power supply voltage generating circuit down converting external power supply voltage to generate first and second internal power supply voltages, a Vpp generating circuit generating a high voltage from external
RE36875 Semiconductor memory device capable of performing test mode operation and method of operating su September 19, 2000
Disclosed is a DRAM including a test mode operation capable of testing whether a plurality of memory cells are defective or not in a short time. The DRAM includes a power-on detection signal generator, a power-on reset signal generator, and a test mode instruction signal generator. The
RE36842 Semiconductor memory device for maintaining level of signal line August 29, 2000
A memory array MA.sub.0 is divided into four sub memory arrays by sense amplifier strips. Word drivers belonging to each sub memory array are connected to a corresponding segment boosted signal line. A fuse is connected to each segment boosted signal line. By blowing out a fuse, the
RE36818 Insulated gate semiconductor device with stripe widths August 15, 2000
There is disclosed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n.sup.- semiconductor layer (3) by double diffusion in corresponding relation to a p type base region (4) of an IGBT cell adjacent thereto, and an emitter
RE36672 Read/write head retract mechanism April 25, 2000
A retract mechanism for a magnetic head which can read from and/or write to a disk, the mechanism includes a spring arm which supports the head and urges the head toward the disk. The spring arm includes a cam follower which rides along the surface of the cam, which has two parallel
RE36655 Semiconductor memory device and method for reading and writing data therein April 11, 2000
An NAND gate for outputting an output establishment detection signal in response to the fact that a complementary output of a latch type sense amplifier has been established is provided. When a tristate buffer is activated by signal, a word line which has been in a selected state is
RE36604 Scroll type compressor having curved surface portions between the shaft and bearing means March 7, 2000
A scroll type compressor comprising: a crankshaft having an eccentric shaft portion formed thereon; an orbiting scroll which is given torque by the crankshaft through the eccentric shaft portion; and bearing means for rotatably supporting the crankshaft; wherein at least one of the eccen
RE36531 Semiconductor memory device including memory cells connected to a ground line January 25, 2000
A memory cell array in a static random access memory (SRAM) includes an improved circuit. Memory cells in one row are connected to a ground line. The memory cells in another row are connected to the ground line. Word lines each are connected alternately to the memory cells of two rows
RE36517 Thin film magnet, cylindrical ferromagnetic thin film and production method thereof January 18, 2000
A thin film magnet and a cylindrical ferromagnetic thin film having a high maximum energy product (greater than 120 kJ/m.sup.3) and thus suitable for use in miniature high performance devices are provided. The thin film magnet is produced by means of physical vapor deposition. The thin f
RE36429 Alternating electric field diminishing structure for cathode ray tube device December 7, 1999
A cathode ray tube device capable of providing sufficient shielding effect against leaking alternating electric field while exhibiting high reliability during long use. Alternating electric field generated by a deflection yoke is sufficiently reduced by the shielding effect produced
RE36169 Semiconductor memory device March 30, 1999
A semiconductor memory device is provided having a read out gate for detecting and providing to a main I/O line pair the potential difference of a sub-data input/output line pair, and a write gate for transferring data of the main I/O line pair to the sub-data input/output line pair in
RE36089 Column selecting circuit in semiconductor memory device February 9, 1999
Column address A0-A11 is once predecoded by a first predecoder PD1, a second predecoder PD2, and a CDE buffer CDB and then applied to a column decoder CD. Column decoder CD selectively drives one of a plurality of column selecting lines CSL on the basis of the applied predecoded signals.
RE36077 Method of manufacturing inversion type IC's and IC module using same February 2, 1999
A method of manufacturing inversion ICs includes the steps of connecting a first electrode pad group of a semiconductor chip to a second lead group via wires, connecting a second electrode pad group of the semiconductor chip to a first lead group via wires, sealing the semiconductor chip
RE36056 Mobile telephone device with low power consumption January 19, 1999
A mobile telephone device comprises a separate paging signal channel in addition to the conventional transceiver channels which process voice signals. The paging signal channel has a lower power consumption level than the transceiver channels. A power supply control device shuts off
RE36027 Random access memory of a CSL system with a bit line pair and an I/O line pair independently set January 5, 1999
In a dynamic RAM of a CSL system, a memory array is divided into a plurality of memory array portions, and bit line pairs provided in the respective memory array portions are connected to their corresponding I/O line pairs simultaneously in response to a CSL output. In such an RAM, o
RE35781 Coding method of image information May 5, 1998
A coding method of a binary Markov information source comprises the steps of providing a range on a number line from 0 to 1 which corresponds to an output symbol sequence from the information source, and performing data compression by binary expressing the position information on the num
RE35645 Semiconductor memory device having a test mode setting circuit October 28, 1997
In a semiconductor memory device having a test mode setting circuit, when a voltage higher than a common operation range is applied to an input terminal (101) receiving CAS signals, a first voltage detecting circuit (100) detects the voltage and the detected output is latched in a latch
RE35613 Dynamic random access memory with isolated well structure September 23, 1997
A semiconductor memory device includes a first conductivity type well in a first conductivity type semiconductor substrate surrounded by a second conductivity type well, one of a memory cell and an external input circuit arranged on the first conductivity type well and the other disposed
RE35591 Memory cell array semiconductor integrated circuit device August 19, 1997
Memory cells having a stable write operation are formed in an array on a CMOS gate array semiconductor substrate. Each memory cell includes mutually adjacent transistors from a first pair of complementary conductivity type MOS transistor rows. These transistors are used to form a fli
RE35496 Semiconductor device and method of producing the same April 29, 1997
A semiconductor device of the present invention accommodates a large semiconductor chip in a downsized package without impairing its reliability. The semiconductor chip is bonded on a relatively small die pad. Common inner leads and a plurality of inner leads are disposed opposite an
RE35414 Picture coding and decoding apparatus using vector quantization December 31, 1996
An interframe video data coding and decoding apparatus utilizes a differential amplitude suppression circuit in combination with a block encoder and a motion detector to non-linearly suppress amplitude values of interframe differential block data based on a motion detection threshold
RE35333 Infrared detector September 24, 1996
An infrared detector wherein an infrared detecting device can be cooled efficiently without increasing thermal stresses generated in the device body owing to cooling during the operation of the detector, and intrusion of ambient light can be prevented. A container for the infrared detect
RE35141 Substrate bias generating circuit January 9, 1996
The disclosure described a substrate bias generating circuit in which an internal RAS (Row Address Strobe) signal and an internal CAS (Column Address Strobe) signal, both of which are synchronized with an external RAS signal and external CAS supplied from outside in addition to self-

 
 
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