| Patent Number |
Title Of Patent |
Date Issued |
| 7615394 |
Method for fabricating MEMS device package that includes grinding MEMS device wafer to expose ar |
November 10, 2009 |
| A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array pads arrayed on an outer side of the bonding bumps, and an MEMS device wafer bonded to an upper portion of the cap wafer in a |
| 7605610 |
Differential current driving type transmission system |
October 20, 2009 |
| There is provided a differential current driving current type transmission system. The system includes a transmission line pair for transmitting a signal by a differential scheme; a transmission unit having a transmission circuit for making the transmission line pair have a current d |
| 7604750 |
Method for fabricating semiconductor device |
October 20, 2009 |
| A method for fabricating a semiconductor device is provided. The method includes: loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma; etching a gate structure formed on the wafer, thereby generating etch remnants; and |
| 7592940 |
Digital-to-analog converter and digital-to-analog conversion method thereof |
September 22, 2009 |
| A digital-to-analog converter (DAC) can minimize the increase of an area caused by increase of number of bits. The DAC includes a coarse resistor-string digital-to-analog conversion unit for selectively outputting 2.sup.N-level analog voltages in response to upper N-bit digital data, |
| 7592670 |
Semiconductor device |
September 22, 2009 |
| A semiconductor device includes a P-channel metal-oxide semiconductor (PMOS) transistor and an N-channel metal-oxide semiconductor (NMOS) transistor formed in three or more fin active regions in a vertical stack structure, an input metal line contacting gates of the PMOS transistor a |
| 7588950 |
Test pattern for reliability measurement of copper interconnection line having moisture window a |
September 15, 2009 |
| Disclosed is a test pattern for a reliability measurement of a copper interconnection line having a moisture window and a method for manufacturing the same. The method includes the steps of: a first inter-layer insulation layer formed on the substrate; a plurality of bottom copper in |
| 7573082 |
CMOS image sensor and method of fabricating the same |
August 11, 2009 |
| A CMOS image sensor and a method of fabricating the same are provided. In the CMOS image sensor, a device isolation layer is formed in a substrate to define an active region, and a photodiode is formed in the active region. A floating diffusion region is formed at a position spaced apart |
| 7570276 |
Display driver circuit and drive method thereof |
August 4, 2009 |
| There is provided a technology that can reduce the number of signal lines by encoding a PWM signal used in a display driver IC. The display driver circuit for displaying a gradation on a display screen based on a PWM signal includes a PWM signal generator for generating a PWM signal, a P |
| 7564451 |
Organic light emitting device |
July 21, 2009 |
| An organic light emitting device driver for driving an organic light emitting device including a plurality of unit pixels each of which includes an organic light emitting element, the organic light emitting device driver includes: a discharge unit for generating a discharge current d |
| 7557441 |
Package of MEMS device and method for fabricating the same |
July 7, 2009 |
| A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array bumps arrayed on an outer side of the bonding bumps, and an MEMS device wafer over which a plurality of first outer pads are |
| 7554845 |
EEPROM cell and EEPROM block |
June 30, 2009 |
| The EEPROM cell includes a writing unit having a flash cell Metal Oxide Semiconductor (MOS) for receiving from outside a gate selection signal via a gate and a drain selection signal via a drain, and writing one bit data, and a high-voltage MOS whose source is connected to a source of th |
| 7542601 |
Method for enhancing image quality by saturation |
June 2, 2009 |
| The present invention relates to a method for enhancing an image quality by saturation. The method includes the step of: determining a minimum gain value `SatGainMin` and a maximum gain value `SatGainMax` of a gain value `PGain` of a pre-amplifier; defining a first to a third ranges |
| 7537998 |
Method for forming salicide in semiconductor device |
May 26, 2009 |
| Forming salicide in a semiconductor device includes the steps of: forming a first and a second gate oxide film and in a non-salicide region and a salicide region, the first gate oxide film being thicker than the second gate oxide film; forming a conductive layer and a nitride based hard |
| 7537971 |
Method for fabricating CMOS image sensor |
May 26, 2009 |
| A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes performing an ion implantation process onto a photodiode region in a first conductivity type semiconductor layer to form a second conductivity type first impurity region, and performing an |
| 7535067 |
Transistor in semiconductor devices and method of fabricating the same |
May 19, 2009 |
| Disclosed are a transistor in the semiconductor device and method of fabricating the same. A gate oxide film is formed using a nitrification oxide film in a low voltage device region and a gate oxide film is formed to have a stack structure of a nitrification oxide film/oxide film/ni |
| 7531884 |
CMOS image sensor with backside illumination and method for manufacturing the same |
May 12, 2009 |
| A CMOS image sensor includes a plurality of pixel regions formed under a front surface of a substrate, and having photodiodes separated from each other by a field oxide, a multi-layered metal interconnection formed over the pixel regions of the front of the substrate, a bump connected to |
| 7531872 |
High voltage transistor and method for fabricating the same |
May 12, 2009 |
| A high voltage transistor operating through a high voltage and a method for fabricating the same are provided. The high voltage transistor includes: an insulation layer on a substrate; an N.sup.+-type drain junction region on the insulation layer; an N.sup.--type drain junction regio |
| 7531858 |
Complementary metal oxide semiconductor image sensor with multi-floating diffusion region |
May 12, 2009 |
| The present invention relates to a complementary metal oxide semiconductor (CMOS) image sensor. Particularly, a unit pixel of the complementary metal oxide semiconductor (CMOS) image sensor, wherein the unit pixel has a rectangular shape and is defined with the top region and the bottom |
| 7522202 |
Image sensor and digital gain compensation method thereof |
April 21, 2009 |
| An image sensor and digital gain compensation method thereof. The image sensor comprises a variable amplification device for amplifying an inputted analog image signal as a variable first gain value, an analog-to-digital conversion unit for converting the amplified analog image signa |
| 7521315 |
Method for fabricating image sensor capable of increasing photosensitivity |
April 21, 2009 |
| An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the |
| 7518647 |
Image sensor for removing horizontal noise |
April 14, 2009 |
| Disclosed herein is an image sensor for removing a horizontal noise. The image sensor includes a pixel array including a plurality of unit pixels located at every row or column; an analog bus located at every row or column, for transferring output signals of the pixel array; and a readou |
| 7515179 |
Method for integrating image sensor |
April 7, 2009 |
| Disclosed is a method for integrating an image sensor capable of removing a flicker noise without causing any burdens on a hardware due to setting up additional logics. The method for integrating an exposure time of an image sensor employing a line scan method, including the steps of: |
| 7508430 |
Method for locally reducing row noise |
March 24, 2009 |
| A method for reducing the row noise from complementary metal oxide semiconductor (CMOS) image sensor by using a local offset correction is disclosed. The method operates on sensor with and without a Color Filter Array (CFA) before any interpolation is applied and estimates the local |
| 7508018 |
Image sensor having a highly doped and shallow pinning layer |
March 24, 2009 |
| An image sensor includes a first conductivity type substrate with a trench formed in a predetermined portion thereof, a second conductivity type impurity region formed in the first conductivity type substrate below the trench and being a part of a photodiode, a second conductivity type f |
| 7504681 |
Image sensor and method for fabricating the same |
March 17, 2009 |
| A complementary metal oxide semiconductor (CMOS) image sensor capable of improving photosensitivity and a signal to noise ratio and a method for fabricating the same are provided. An image sensor for embodying the colors of red, green and blue includes: a plurality of photodiodes formed |
| 7496231 |
Color interpolation method |
February 24, 2009 |
| Disclosed is a color interpolation method. The present invention decides a precise position of an edge with use of a G value in a unit pixel structure with a size of 3.times.3, thereby using different color interpolations according to the position of the edge. Also, the present inven |
| 7495206 |
Image sensor with stacked and bonded photo detection and peripheral circuit substrates |
February 24, 2009 |
| A complementary metal oxide semiconductor (CMOS) device with a three dimensional integration structure and a method for fabricating the same are provided. An image sensor includes a first substrate in which a photo detection device is formed; a second substrate in which a peripheral |
| 7456878 |
Method of color filter design and color reproduction under the effect of pixel crosstalk in CMOS |
November 25, 2008 |
| The present invention is directed at method of designing a Color Filter Arrays (CFA) for CMOS image sensors under the effects of crosstalk for optimal color reproduction. Instead of a focus on lowering crosstalk, a novel method of designing color filter spectral responses to compensate |
| 7450161 |
System and method to enhance the uniformity of intensity distribution on digital imaging sensors |
November 11, 2008 |
| Systems, computer readable media and methods for digital processing of images captured by a sensor to enhance intensity uniformity of the images. The sensor captures an image of a white light source. Then, using the captured image, a compensation factor for each pixel of the image se |
| 7436261 |
Operational amplifier |
October 14, 2008 |
| An operational amplifier includes: a differential amplifier circuit configured to receive an inverting input voltage (VIN-) and a non-inverting input voltage (VIN+); and an auxiliary circuit for improving a slew rate of an output voltage of the differential amplifier circuit, wherein |
| 7427547 |
Three-dimensional high voltage transistor and method for manufacturing the same |
September 23, 2008 |
| A method for manufacturing a three-dimensional high voltage transistor is disclosed. According to the method, lengths and widths of channels are increased while the reducing transistor forming area on plane, and semiconductor devices are completely separated from each other while res |
| 7425941 |
Source driver of liquid crystal display |
September 16, 2008 |
| A TFT-LCD source driver for driving L channels of a liquid crystal panel (where L is a positive integer), the TFT-LCD source driver comprising a plurality of DACs (digital-to-analog converters) for converting (M+N)-bit different digital signals into analog signals (where M and N are posi |
| 7417492 |
Regulator |
August 26, 2008 |
| A regulator includes a digital voltage detection unit for generating a digital voltage detection signal by detecting a digital value of a voltage level of an input voltage; a variable gain amplifying unit for amplifying the input voltage in an amplifying ratio according to a gain con |
| 7413956 |
Semiconductor device manufacturing method |
August 19, 2008 |
| Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor substrate, in which active and inactive regions are separated by a field oxidation film; source/drain junctions contacting the field oxidation film and form |
| 7409084 |
Method for determining dark condition and method for interpolating color in image sensor |
August 5, 2008 |
| Disclosed are a method for determining a dark condition in an image sensor to prevent a color noise and a method for interpolating colors. The present invention forms a window with a size of 5.times.5 array and determines a local color distribution based on a center pixel by using th |
| 7402479 |
CMOS image sensor and fabricating method thereof |
July 22, 2008 |
| A fabricating method of a CMOS image sensor includes the steps of: forming a transfer gate on a semiconductor substrate where a device isolation layer is formed; forming a first n-type ion implantation region for a photodiode beneath a surface of the semiconductor substrate, the first |
| 7394491 |
Image sensor having clamp circuit |
July 1, 2008 |
| An image sensor of the present invention prevents the phenomenon that surrounding background of a bright object reflecting or emitting strong light like the sun is presented at dark and improves image quality of the image sensor by controlling the brightness of the bright object. The |
| 7385434 |
Circuit for preventing latch-up in DC-DC converter |
June 10, 2008 |
| There is provided a circuit for preventing latch-up in a DC-DC. The circuit for preventing a latch-up phenomenon in a DC-DC converter, the DC-DC converter having a first and a second DC-DC converters coupled with each other in one chip for receiving an input voltage to generate a pos |
| 7385253 |
Device for electrostatic discharge protection and circuit thereof |
June 10, 2008 |
| Disclosed herein are a device for electrostatic protection and circuit thereof. According to the present invention, a device for electrostatic discharge protection comprises first to third wells formed on a semiconductor substrate, a first device, which includes a well pick-up region |
| 7378747 |
Semiconductor device chip and semiconductor device chip package |
May 27, 2008 |
| A semiconductor device chip includes channel blocks each of which includes channels, each of the channels including unit devices placed in a substrate and well regions; first metal interconnection lines connected to the unit devices comprising the channels to receive and transfer data |
| 7378315 |
Method for fabricating semiconductor device |
May 27, 2008 |
| A method for fabricating a semiconductor device for a system on chip (SOC) for embodying a transistor for a logic device, an electrical erasable programmable read only memory (EEPROM) cell and a flash memory cell in one chip is provided. Floating gates of the EEPROM cell and the flash |
| 7372492 |
Image sensor having reset compensation block |
May 13, 2008 |
| An image sensor for obtaining a digital image data by using a correlated double sampling method unrelated to an intensity of inputted light includes a pixel array including N.times.M unit pixels; a reset voltage check block for receiving each reset signal outputted from each unit pix |
| 7368748 |
Test pixel and test pixel array for evaluating pixel quality in CMOS image sensor |
May 6, 2008 |
| A test pixel for use in a CMOS image sensor is employed to evaluate a pixel quality by modulating a contact chain. The test pixel for use the CMOS image sensor including: a test pixel active area corresponding to each unit pixel active area, wherein the unit pixel active area has a f |
| 7366347 |
Edge detecting method |
April 29, 2008 |
| There is provided an edge detecting method, which is capable of preventing a noise influence caused by imaging device and a color interpolation. The edge detecting method includes the steps of: setting a first kernel based on a center pixel in pixel data arranged in a mosaic structure; s |
| 7364963 |
Method for fabricating semiconductor device |
April 29, 2008 |
| A method for fabricating a semiconductor device is provided. The method includes: implanting impurities onto a substrate by performing an ion implantation process; recessing portions of the substrate to form a plurality of trenches; performing a first thermal process to form junction |
| 7361957 |
Device for electrostatic discharge protection and method of manufacturing the same |
April 22, 2008 |
| The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes a semiconductor substrate, a plurality of field oxide films formed in predetermined re |
| 7361527 |
Image sensor with improved charge transfer efficiency and method for fabricating the same |
April 22, 2008 |
| An image sensor includes: a gate structure on a semiconductor layer of a first conductive type; a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a predetermined depth from a surface portion of the semiconductor layer; s |
| 7358552 |
Complementary metal-oxide-semiconductor image sensor and method for fabricating the same |
April 15, 2008 |
| A complementary metal-oxide-semiconductor (CMOS) image sensor and a method for fabricating the same are provided. The CMOS image sensor includes: a pixel region provided with a plurality of unit pixels, each including a buried photodiode and a floating diffusion region; and a logic regio |
| 7352395 |
Defect pixel repairable image sensor |
April 1, 2008 |
| An image sensor includes a storage block for storing a plurality of pixel data which is transmitted from a pixel array block; a switching block for delivering a first pixel data from the storage block in response to a first control signal; a defect pixel repairing block which is controll |
| 7345703 |
CMOS image sensor including photodiodes having different depth according to wavelength of light |
March 18, 2008 |
| An image sensor capable of preventing the cross-talk phenomenon due to a deep penetration depth and a low absorption coefficient of red light in a photodiode region and a method for fabricating the same, wherein the photodiode for collecting incident light has different depths in acc |
