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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
MSI Electronics Inc. Patents
Assignee:
MSI Electronics Inc.
Address:
Woodside, NY
No. of patents:
6
Patents:




Patent Number Title Of Patent Date Issued
RE32024 Mercury probe November 5, 1985
The disclosed apparatus provides a mercury electrode for making non-destructive tests, especially for Schottky-diode tests of semi-conductors such as silicon. By developing vacuum under a test wafer on a support, a column of mercury is drawn into contact with the test wafer through a
5448625 Telephone advertising method and apparatus September 5, 1995
A method and apparatus for routing a telephone call through a telephone network from a caller to a called party designated by the caller via advertising service apparatus that operates in two modes successively, the parties being in communication with each other in one mode and ads are
4587484 Mercury probe and method May 6, 1986
The disclosed mercury probe has a mercury reservoir and one or more passages extending from the reservoir to an aperture plate for engaging a test wafer. Dross that tends to form at the wafer-contact end of the mercury passage(s) is removed by returning all of the mercury in the pass
4521730 Mercury probes June 4, 1985
The disclosed mercury probe has one or more mercury reservoirs and one or more passages extending from the reservoir(s) to an aperture plate for engaging a test wafer. Dross that tends to form at the wafer-contact end of the mercury passage(s) is removed by returning all of the mercury i
4409547 Mercury-probe apparatus October 11, 1983
The described apparatus includes a member of insulation containing a reservoir of mercury and a passage from a side of the reservoir to a contact aperture in a flat face of the member that engages a test wafer, the contact aperture being below the upper surface of the reservoir by a
4101830 Mercury probe July 18, 1978
The disclosed apparatus provides a mercury electrode for making non-destructive tests, especially for Schottky-diode tests of semi-conductors such as silicon. By developing vacuum under a test wafer on a support, a column of mercury is drawn into contact with the test wafer through a

 
 
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