| Patent Number |
Title Of Patent |
Date Issued |
| 7323676 |
Color photosensor with color filters and subtraction unit |
January 29, 2008 |
| The invention relates to a color photosensor for sensing the color contents of incident light. In order to provide a color photosensor which is cheap to produce and which allows the control of light in as well intensity as color a color photosensor is proposed comprising: a sensing u |
| 7264527 |
Quantum dot white and colored light-emitting devices |
September 4, 2007 |
| A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to |
| 7071494 |
Light emitting device with enhanced optical scattering |
July 4, 2006 |
| A light emitting device includes a substrate, a textured layer overlying the substrate, at least one III-nitride layer overlying the textured layer, and a substantially planar light emitting region. Devices incorporating scattering layers may be formed by several different methods. I |
| 7064355 |
Light emitting diodes with improved light extraction efficiency |
June 20, 2006 |
| Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element having a refractive index for light emitted |
| 7053419 |
Light emitting diodes with improved light extraction efficiency |
May 30, 2006 |
| Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the ac |
| 7049159 |
Stenciling phosphor layers on light emitting diodes |
May 23, 2006 |
| A method for forming a luminescent layer on a light emitting semiconductor device includes positioning a stencil on a substrate such that a light emitting semiconductor device disposed on the substrate is located within an opening in the stencil, depositing a stenciling composition inclu |
| 7048412 |
Axial LED source |
May 23, 2006 |
| A lamp has LED sources that are placed about a lamp axis in an axial arrangement. The lamp includes a post with post facets where the LED sources are mounted. The lamp includes a segmented reflector for guiding light from the LED sources. The segmented reflector includes reflective s |
| 7038370 |
Phosphor converted light emitting device |
May 2, 2006 |
| A system includes a radiation source capable of emitting first light and a fluorescent material capable of absorbing the first light and emitting second light having a different wavelength than the first light. The fluorescent material is a phosphor having the formula (Lu.sub.1-x-y-a |
| 7030572 |
Lighting arrangement |
April 18, 2006 |
| In a lighting arrangement comprising a LED array and a DC-DC-converter for supplying the LED array, the DC-DC-converter is an up-converter and the LED array is coupled between an input terminal and an output terminal. The up-converter generates a very low voltage over the LED array witho |
| 7026663 |
Selective filtering of wavelength-converted semiconductor light emitting devices |
April 11, 2006 |
| A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and |
| 7026653 |
Semiconductor light emitting devices including current spreading layers |
April 11, 2006 |
| III-nitride or III-phosphide light emitting devices include a light emitting region disposed between a p-type region and an n-type region. At least one heavily doped layer is disposed within either the n-type region or the p-type region or both, to provide current spreading. |
| 7019330 |
Resonant cavity light emitting device |
March 28, 2006 |
| A light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through the distributed Bragg reflector. A light emitting region sandwiched between a layer of first conductivity type and |
| 7015054 |
Semiconductor light emitting device and method |
March 21, 2006 |
| A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different s |
| 7012279 |
Photonic crystal light emitting device |
March 14, 2006 |
| A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type |
| 7009213 |
Light emitting devices with improved light extraction efficiency |
March 7, 2006 |
| A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semi |
| 6995402 |
Integrated reflector cup for a light emitting device mount |
February 7, 2006 |
| A mount for a semiconductor light emitting device includes an integrated reflector cup. The reflector cup includes a wall formed on the mount and shaped and positioned to reflect side light emitted from the light emitting device along a vertical axis of the device/mount combination. |
| 6995389 |
Heterostructures for III-nitride light emitting devices |
February 7, 2006 |
| Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer a |
| 6992334 |
Multi-layer highly reflective ohmic contacts for semiconductor devices |
January 31, 2006 |
| A high performance, highly reflective ohmic contact, in the visible spectrum (400 nm 750 nm), has the following multi-layer metal profile. A uniform and thin ohmic contact material is deposited and optionally alloyed to the semiconductor surface. A thick reflector layer selected from |
| 6989555 |
Strain-controlled III-nitride light emitting device |
January 24, 2006 |
| In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the |
| 6987613 |
Forming an optical element on the surface of a light emitting device for improved light extracti |
January 17, 2006 |
| Provided is a light emitting device including a Fresnel lens and/or a holographic diffuser formed on a surface of a semiconductor light emitter for improved light extraction, and a method for forming such light emitting device. Also provided is a light emitting device including an op |
| 6977396 |
High-powered light emitting device with improved thermal properties |
December 20, 2005 |
| A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least |
| 6974229 |
Devices for creating brightness profiles |
December 13, 2005 |
| A mixing chamber includes a first surface and a second surface opposite the first surface. At least two light emitting diodes are disposed along the first surface. At least a portion of the first surface is reflective, and the second surface includes a reflective region and a plurality o |
| 6969946 |
Enhanced brightness light emitting device spot emitter |
November 29, 2005 |
| The amount of usefully captured light in an optical system may be increased by concentrating light in a region where it can be collected by the optical system. A light emitting device may include a substrate and a plurality of semiconductor layers. In some embodiments, a reflective m |
| 6956247 |
Semiconductor light emitting device including photonic band gap material and luminescent materia |
October 18, 2005 |
| A light emitting structure includes a semiconductor light emitting device capable of emitting first light having a first peak wavelength, a luminescent material capable of emitting second light having a second peak wavelength disposed over the semiconductor light emitting device, and a |
| 6956246 |
Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
October 18, 2005 |
| A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the |
| 6955933 |
Light emitting diodes with graded composition active regions |
October 18, 2005 |
| A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semicon |
| 6946685 |
Light emitting semiconductor method and device |
September 20, 2005 |
| Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver metallization to the pn junction of the device results in an alternate shunt path across the jun |
| 6946309 |
III-Phosphide and III-Arsenide flip chip light-emitting devices |
September 20, 2005 |
| A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the |
| 6943381 |
III-nitride light-emitting devices with improved high-current efficiency |
September 13, 2005 |
| A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier con |
| 6933767 |
Circuit arrangement |
August 23, 2005 |
| In an up-converter feed forward control of the output current is effected by rendering the conduction time of the switching element proportional to V.sub.out /V.sub.in.sup.2. This control is fast and avoids interference and loss of efficiency. |
| 6933535 |
Light emitting devices with enhanced luminous efficiency |
August 23, 2005 |
| A structure includes semiconductor light emitting device and a wavelength converting layer. The wavelength converting layer converts a portion of the light emitted from the semiconductor light emitting device. The dominant wavelength of the combined light from the semiconductor light |
| 6930452 |
Circuit arrangement |
August 16, 2005 |
| In a circuit arrangement for driving a LED array comprising red, green and blue LEDs, a control loop is added for limiting the duty cycles of the control signals for driving the red, green and blue LEDs. In case one of the duty cycles reaches the limit value, the reference signals for th |
| 6922022 |
LED switching arrangement for enhancing electromagnetic interference |
July 26, 2005 |
| The invention relates to a switching arrangement for operating at least one LED, which switching arrangement is provided with input terminals (1, 2) for connecting a supply source, --output terminals (3, 4) for connecting the LED to be operated, --a first series circuit (I) between one o |
| 6914272 |
Formation of Ohmic contacts in III-nitride light emitting devices |
July 5, 2005 |
| P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 .OMEGA.cm is formed between a p-type conductivity layer and a metal con |
| 6914265 |
Quantum dot white and colored light emitting diodes |
July 5, 2005 |
| An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of |
| 6903376 |
Selective placement of quantum wells in flipchip light emitting diodes for improved light extrac |
June 7, 2005 |
| In accordance with embodiments of the invention, a light emitting device includes a light emitting region and a reflective contact separated from the light emitting region by one or more layers. In a first embodiment, the separation between the light emitting region and the reflective |
| 6900474 |
Light emitting devices with compact active regions |
May 31, 2005 |
| A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second |
| 6900472 |
Semiconductor light emitting device having a silver p-contact |
May 31, 2005 |
| A light emitting device is constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is |
| 6900067 |
Growth of III-nitride films on mismatched substrates without conventional low temperature nuclea |
May 31, 2005 |
| A method of forming a light emitting device includes providing a sapphire substrate, growing an Al.sub.1-x Ga.sub.x N first layer by vapor deposition on the substrate at a temperature between about 1000.degree. C. and about 1180.degree. C., and growing a III-nitride second layer over |
| 6891197 |
Semiconductor LED flip-chip with dielectric coating on the mesa |
May 10, 2005 |
| A dielectric layer is formed on the mesa wall of a flip-chip LED. The dielectric layer is selected to maximize reflection of light incident at angles ranging from 10 degrees towards the substrate to 30 degrees away from the substrate. In some embodiments, the LED is a III-nitride device |
| 6885035 |
Multi-chip semiconductor LED assembly |
April 26, 2005 |
| A light emitting device includes several LEDs, mounted on a shared submount, and coupled to circuitry formed on the submount. The LEDs can be of the III-Nitride type. The architecture of the LEDs can be either inverted, or non-inverted. Inverted LEDs offer improved light generation. |
| 6878973 |
Reduction of contamination of light emitting devices |
April 12, 2005 |
| A light emitting device and a method of making the same are provided. The light emitting device includes a light emitting diode and a submount. A phosphormaterial is disposed around at least a portion of the light emitting diode. An underfill is disposed between a first surface of the |
| 6876008 |
Mount for semiconductor light emitting device |
April 5, 2005 |
| A device includes a submount, and a semiconductor light emitting device mounted on first and second conductive regions on a first side of the submount in a flip chip architecture configuration. The submount has third and fourth conductive regions on a second side of the submount. The thi |
| 6870311 |
Light-emitting devices utilizing nanoparticles |
March 22, 2005 |
| Light-emitting devices are disclosed that comprise a light source emitting first light, a first material substantially transparent to and located to receive at least a portion of the first light, and particles of a second material dispersed in the first material. The second material has |
| 6849474 |
Growing a low defect gallium nitride based semiconductor |
February 1, 2005 |
| A low defect gallium nitride based semiconductor, and method for its production, is disclosed. A first gallium nitride based semiconductor layer overlying a substrate of a dissimilar material is grown. A trench is formed in the first gallium nitride based semiconductor layer. A material |
| 6849472 |
Nitride semiconductor device with reduced polarization fields |
February 1, 2005 |
| A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the |
| 6847057 |
Semiconductor light emitting devices |
January 25, 2005 |
| A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second |
| 6844903 |
Blue backlight and phosphor layer for a color LCD |
January 18, 2005 |
| A color, transmissive LCD uses a backlight that supplies a uniform blue light to the back of the liquid crystal layer in an LCD. The blue light, after being modulated by the liquid crystal layer, is then incident on the back surface of phosphor material located above the liquid crystal l |
| 6844571 |
III-nitride light-emitting device with increased light generating capability |
January 18, 2005 |
| The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, |
| 6835957 |
III-nitride light emitting device with p-type active layer |
December 28, 2004 |
| A III-nitride light emitting device includes an n-type layer, a p-type layer, and an active region capable of emitting light between the p-type layer and the n-type layer. The active region includes at least one additional p-type layer. The p-type layer in the active region may be a |
