| Patent Number |
Title Of Patent |
Date Issued |
| 6010133 |
Chamber interfacing O-rings and method for implementing same |
January 4, 2000 |
| Disclosed is a method for implementing a vacuum seal between an interface of a transport chamber interface port of a transport chamber and another chamber. The transport chamber being configured to mate with the another chamber in an adjacent relationship. The method includes placing an |
| 6004884 |
Methods and apparatus for etching semiconductor wafers |
December 21, 1999 |
| A method for etching a TiN layer of a wafer stack in a plasma processing chamber. The method includes the step of etching at least partially through the TiN layer using a first chemistry, which preferably includes a TiN etchant, a noble gas, and a polymer-forming chemical. In one emb |
| 5998932 |
Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing ch |
December 7, 1999 |
| A focus ring assembly configured to substantially encircle a chuck of a plasma processing chamber. The focus ring assembly includes an annular dielectric body; and an electrically conductive shield surrounding the annular dielectric body. The electrically conductive shield is configured |
| 5994235 |
Methods for etching an aluminum-containing layer |
November 30, 1999 |
| A method for etching selected portions of an aluminum-containing layer of a layer stack that is disposed on a substrate. The aluminum-containing layer is disposed below a photoresist mask having a pattern thereon. The method includes providing a plasma processing chamber and positioning |
| 5993594 |
Particle controlling method and apparatus for a plasma processing chamber |
November 30, 1999 |
| A plasma processing chamber includes a substrate holder and a member of silicon nitride such as a liner, focus ring or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize particle contamination d |
| 5988187 |
Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning |
November 23, 1999 |
| A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is inje |
| 5982492 |
Method of and apparatus for determining the center of a generally circular workpiece relative to |
November 9, 1999 |
| The center of a semiconductor wafer relative to a rotation axis of a spindle carrying the wafer is detected by turning the spindle while a line source of optical radiation is directed at the wafer. A CCD linear optical detector array extending along a line between the spindle axis to a p |
| 5982099 |
Method of and apparatus for igniting a plasma in an r.f. plasma processor |
November 9, 1999 |
| A gas in a vacuum plasma processing chamber is ignited to a plasma by subjecting the gas to an r.f. field derived from an r.f. source having a frequency and power level sufficient to ignite the gas into the plasma and to maintain the plasma. The r.f. field is supplied to the gas by a |
| 5975013 |
Vacuum plasma processor having coil with small magnetic field in its center |
November 2, 1999 |
| A substantially planar coil of a vacuum plasma processor has plural turns for exciting gas in the processor to a plasma state in response to r.f. coil energization. The coil is located outside the processor and surrounded by a shield tending to cause magnetic flux coupled from periph |
| 5968594 |
Direct liquid injection of liquid ammonia solutions in chemical vapor deposition |
October 19, 1999 |
| The invention encompasses delivery of reactants for chemical vapor deposition by direct liquid injection of a liquid ammonia solution. In a preferred embodiment, a solution of titanium tetraiodide in liquid ammonia provides reactants for the deposition of titanium nitride. |
| 5968374 |
Methods and apparatus for controlled partial ashing in a variable-gap plasma processing chamber |
October 19, 1999 |
| A method in a variable-gap plasma processing chamber for controlled removal of at least a portion of an upper crust of a photoresist layer disposed above a substrate. The upper crust represents a hardened upper layer of the photoresist layer. The method includes loading the substrate int |
| 5968275 |
Methods and apparatus for passivating a substrate in a plasma reactor |
October 19, 1999 |
| A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating regi |
| 5966586 |
Endpoint detection methods in plasma etch processes and apparatus therefor |
October 12, 1999 |
| Methods for determining an endpoint for a plasma etching process. The plasma etching process is employed to etch a substrate in a plasma processing chamber. The method includes detecting, using a mass analyzer, a density of a predefined compound in the plasma processing chamber. The |
| 5961724 |
Techniques for reducing particulate contamination on a substrate during processing |
October 5, 1999 |
| A substrate processing system configured for processing a substrate utilizing source gas released from at least one gas jet into a substrate processing chamber of the substrate processing system. The substrate processing system includes a first gas port configured to introduce the ga |
| 5952244 |
Methods for reducing etch rate loading while etching through a titanium nitride anti-reflective |
September 14, 1999 |
| A method, in a plasma processing chamber, for etching through a selected portion of layers of a wafer stack, which comprises an anti-reflective layer and a metallization layer disposed below the anti-reflective layer. The method comprises the step of etching at least partially through th |
| 5948704 |
High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum |
September 7, 1999 |
| A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extend |
| 5948283 |
Method and apparatus for enhancing outcome uniformity of direct-plasma processes |
September 7, 1999 |
| The invention provides method and apparatus that control the thermal environment of the first substrate or substrate of series of substrates treated by a uniform direct-plasma, in order to reduce first-wafer effect. By providing supplemental heat to the substrate in treatment or, equ |
| 5942074 |
Single-piece gas director for plasma reactors |
August 24, 1999 |
| Plasma etching apparatus for use in the manufacture of integrated circuit devices utilizes a one-piece director at an input of a process chamber that includes a sleeve portion and a bell jar portion. The director directs incoming process gas in the sleeve portion radially before the gas |
| 5935874 |
Techniques for forming trenches in a silicon layer of a substrate in a high density plasma proce |
August 10, 1999 |
| A method for etching a trench in a monocrystal silicon layer. The method includes providing a plasma processing system having a plasma processing chamber. The plasma processing system has a variable plasma generation source and a variable ion energy source with the variable plasma ge |
| 5933621 |
Method and Apparatus for terminal emulation in a semiconductor fabricating facility |
August 3, 1999 |
| A method and apparatus for emulating a dedicated terminal in semiconductor fabricator having a back end that includes a source of semiconductor substrates, a transport mechanism for transporting the substrates and a process chamber. A wall separates the back end from a front end envi |
| 5929717 |
Method of and apparatus for minimizing plasma instability in an RF processor |
July 27, 1999 |
| Variable reactances of a matching network connected between an r.f. source and a plasma load of a vacuum plasma chamber processing a workpiece are varied so a tendency of the plasma to change in an unstable manner which can adversely affect processing of the workpiece is avoided while ma |
| 5923099 |
Intelligent backup power controller |
July 13, 1999 |
| An intelligent backup controller performs graceful shutdown of a processing system upon the loss of main AC power. The power source supply is monitored to detect a switch from main AC power to backup power, triggering a sequence of events effecting the graceful shutdown of the proces |
| 5916454 |
Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber |
June 29, 1999 |
| A method for increasing mean time between cleans (MTBC) for a plasma processing chamber configured for running a process. The method includes specifying a minimum roughness specification for a finish of a surface of a chamber interior part configured for use within the plasma processing |
| 5916012 |
Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher |
June 29, 1999 |
| A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings |
| 5915190 |
Methods for filling trenches in a semiconductor wafer |
June 22, 1999 |
| A method for filling a trench in a semiconductor wafer that is disposed in a plasma-enhanced chemical vapor deposition chamber. The method includes the step of depositing a protection layer of silicon dioxide over the wafer and into the trench while the wafer is biased at a first RF bias |
| 5913140 |
Method for reduction of plasma charging damage during chemical vapor deposition |
June 15, 1999 |
| A graded gap fill process in which, in a high density plasma processing chamber, an insulating layer is deposited on a substrate without causing plasma charge-related damage to the substrate. The insulating layer is disposed above a first layer having trenches formed therein and below a |
| 5911833 |
Method of in-situ cleaning of a chuck within a plasma chamber |
June 15, 1999 |
| A method for in-situ cleaning of a chuck that bears a semiconductor wafer in a semiconductor manufacturing machine maintains a processing chamber in a sealed condition with the chuck inside the chamber. A wafer bearing surface of the chuck is exposed upon determining that the chuck requi |
| 5908320 |
High selectivity BPSG:TiSi.sub.2 contact etch process |
June 1, 1999 |
| A method for etching through a selected portion of a Borophosphosilicate Glass (BPSG) layer of the silicon wafer layer stack to a Titanium Silicide (TiSi.sub.2) layer in a plasma processing chamber is disclosed. The method includes the step of etching through the BPSG layer using an etch |
| 5905850 |
Method and apparatus for positioning substrates |
May 18, 1999 |
| A method and apparatus for positioning substrates is provided. The substrates are typically semiconductor wafers that require centering on a mounting location within a process module and orientation of a notch, flat or perimeter interruption to a known rotational position. A robot arm |
| 5904862 |
Methods for etching borophosphosilicate glass |
May 18, 1999 |
| A method in a plasma processing chamber for etching through a selected portion of a borophosphosilicate glass (BPSG) layer of a wafer layer stack. The method includes the step of introducing an etchant source gas into the plasma processing chamber, which consists essentially of CO, C |
| 5904779 |
Wafer electrical discharge control by wafer lifter system |
May 18, 1999 |
| A substrate lifting arrangement for use in a plasma processing chamber. The plasma processing chamber has a chuck configured for supporting a substrate during processing of the substrate within the plasma processing chamber. The substrate lilting arrangement includes at least one substra |
| 5897711 |
Method and apparatus for improving refractive index of dielectric films |
April 27, 1999 |
| A method and an apparatus for depositing a dielectric film on a substrate in a plasma process chamber wherein the uniformity of the refractive index of the film is improved. The method involves introducing an oxygen reactant and a silicon reactant into the process chamber and generating |
| 5892198 |
Method of and apparatus for electronically controlling r.f. energy supplied to a vacuum plasma p |
April 6, 1999 |
| A load including a plasma discharge in a plasma processing chamber is matched to a variable frequency source so the power reflected from the load is substantially minimized. The source voltage or a variable reactance of a matching network between the source and load is controlled so |
| 5889252 |
Method of and apparatus for independently controlling electric parameters of an impedance matchi |
March 30, 1999 |
| An arrangement and method for matching a load and a power source, such as an r.f. power source for a vacuum plasma processing chamber, includes a match network coupled between the power source and the load. The match network has at least two controllably variable electrical characteristi |
| 5885423 |
Cammed nut for ceramics fastening |
March 23, 1999 |
| In a vacuum processing chamber, a method and apparatus for securing an article to a ceramic plate comprises forming a bore in the ceramic plate, forming a counterbore in the ceramic plate, the counterbore having a center which is offset from a center of the bore, inserting a nut into the |
| 5883007 |
Methods and apparatuses for improving photoresist selectivity and reducing etch rate loading |
March 16, 1999 |
| Disclosed is an inventive multiple-chemistry etching method suited for etching through selected portions of layers in a layer stack in a plasma processing chamber. The layer stack preferably includes at least an anti-reflective layer and a metallization layer disposed below the anti- |
| 5880922 |
Multilayered electrostatic chuck and method of manufacture thereof |
March 9, 1999 |
| A ceramic electrostatic chucking device having electrostatic clamping electrodes suitable for clamping wafers and flat panel displays. The chucking device includes a top insulating layer, the clamping electrode, a second insulating layer, a first metallization layer for distributing |
| 5874704 |
Low inductance large area coil for an inductively coupled plasma source |
February 23, 1999 |
| A low inductance large area coil (LILAC) is provided as a source for generating a large area plasma. The LILAC comprises at least two windings which, when connected to an RF source via impedance matching circuitry, produce a circulating flow of electrons to cause a magnetic field in the |
| 5871390 |
Method and apparatus for aligning and tensioning a pad/belt used in linear planarization for che |
February 16, 1999 |
| The present invention describes an apparatus and method for aligning a pad/belt on a roller for use in chemical mechanical polishing using linear planarization. The present invention comprises an alignment sensor that senses the alignment of the pad/belt. The present invention additional |
| 5869877 |
Methods and apparatus for detecting pattern dependent charging on a workpiece in a plasma proces |
February 9, 1999 |
| A charge monitoring apparatus measures an electrical charge deposited on a multiple-layered workpiece, such as a semiconductor wafer, in a plasma processing system. The apparatus includes a charge collection electrode (CCE), a non-conducting patterned layer and a voltage or current senso |
| 5869401 |
Plasma-enhanced flash process |
February 9, 1999 |
| A method in a plasma processing chamber, the chamber being employed for processing a substrate, for removing corrosive species from the plasma processing chamber after the substrate is processed. The method includes introducing a flash source gas comprising an oxidizing agent such as |
| 5869149 |
Method for preparing nitrogen surface treated fluorine doped silicon dioxide films |
February 9, 1999 |
| A process of preparing a moisture-resistant fluorine containing SiO.sub.x film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substrate on a substrate support in the proc |
| 5863376 |
Temperature controlling method and apparatus for a plasma processing chamber |
January 26, 1999 |
| A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift duri |
| 5849641 |
Methods and apparatus for etching a conductive layer to improve yield |
December 15, 1998 |
| A method in a substrate processing chamber for forming a conductive feature by etching through a conductive layer disposed above a semiconductor substrate. The method includes etching at least partially through the conductive layer using a first etch recipe to form a top portion of the |
| 5847918 |
Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors |
December 8, 1998 |
| A dielectric workpiece is clamped to a holder in a vacuum plasma processor chamber by applying the plasma to a surface of the workpiece exposed to the plasma simultaneously with applying a relatively high voltage to an electrode on the holder. The electrode is in close proximity to a por |
| 5846443 |
Methods and apparatus for etching semiconductor wafers and layers thereof |
December 8, 1998 |
| A method in a plasma processing chamber, for etching through a selected portion of an aluminum-containing layer and a titanium-containing layer. The titanium-containing layer is disposed above the aluminum-containing layer. The method includes a first etching step that etches at least |
| 5846373 |
Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement |
December 8, 1998 |
| Thin film deposition process endpoints and in situ-clean process endpoints are monitored using a single light filter and photodetector arrangement. The light filter has a peak transmission proximate a characteristic wavelength of the deposition plasma, such as Si, and one of the pluralit |
| 5841623 |
Chuck for substrate processing and method for depositing a film in a radio frequency biased plas |
November 24, 1998 |
| A chuck for processing a substrate includes a chuck body having a dielectric layer, the dielectric layer including a substrate receiving surface, the substrate receiving surface being at least as large as a substrate to be processed on the chuck. The chuck further includes an electro |
| 5838529 |
Low voltage electrostatic clamp for substrates such as dielectric substrates |
November 17, 1998 |
| An electrostatic clamp for dielectric substrates is operated with a low voltage electric source by reducing the width of electrode lines to less than 100 .mu.m and by reducing the spacing between adjacent electrode lines to less than 100 .mu.m. The electrostatic clamp includes an array o |
| 5835335 |
Unbalanced bipolar electrostatic chuck power supplies and methods thereof |
November 10, 1998 |
| A method of providing unbalanced voltages to a bipolar electrostatic chuck of a substrate processing chamber. The method includes providing a variable balanced voltage power supply, which is configured for producing, responsive to a control signal, balanced differential output voltages o |
