| Patent Number |
Title Of Patent |
Date Issued |
| 6364762 |
Wafer atmospheric transport module having a controlled mini-environment |
April 2, 2002 |
| An atmospheric transport module is provided. The module includes an enclosed housing having a top region, a central region, a bottom region, and a load cell region. A blower is located in the top region of the enclosed housing and is configured to generate a flow of air downward into |
| 6363882 |
Lower electrode design for higher uniformity |
April 2, 2002 |
| A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the proc |
| 6362110 |
Enhanced resist strip in a dielectric etcher using downstream plasma |
March 26, 2002 |
| A method and apparatus for performing a dielectric etch, etch mask stripping, and etch chamber clean. A wafer is placed in an etch chamber. A dielectric etch is performed on the wafer using an in situ plasma generated by an in situ plasma device in the etch chamber. The etch mask is |
| 6361645 |
Method and device for compensating wafer bias in a plasma processing chamber |
March 26, 2002 |
| Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck |
| 6361414 |
Apparatus and method for conditioning a fixed abrasive polishing pad in a chemical mechanical pl |
March 26, 2002 |
| A method and apparatus for conditioning a fixed abrasive polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a conditioning member formed from glass, at least one collimated hole structure located within the conditioning me |
| 6358847 |
Method for enabling conventional wire bonding to copper-based bond pad features |
March 19, 2002 |
| A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may furt |
| 6358118 |
Field controlled polishing apparatus and method |
March 19, 2002 |
| A polishing tool includes a polish pad, a bladder, a fluid, and a flux guide. A bladder containing fluid supports the polishing pad that is positioned adjacent to a surface to be polished. Flux guides positioned along a portion of the bladder direct a field or a magnetic flux to sele |
| 6357308 |
Plasma probe and method for making same |
March 19, 2002 |
| A probe for measuring properties of plasma includes a shell, a contact extending through the shell and having a first connecting portion positioned in the shell, and a connector guide attached to a second connecting portion, the second connecting portion being detachably coupled to t |
| 6354926 |
Parallel alignment method and apparatus for chemical mechanical polishing |
March 12, 2002 |
| A parallel alignment device for chemical mechanical polishing using a plurality of carrier devices (123) rotatably coupled to a turret means. The apparatus (100) includes a turret and plurality of rotatable polishing surfaces (111) positioned around the turret. The apparatus also include |
| 6352595 |
Method and system for cleaning a chemical mechanical polishing pad |
March 5, 2002 |
| A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially r |
| 6350697 |
Method of cleaning and conditioning plasma reaction chamber |
February 26, 2002 |
| A method for cleaning and conditioning interior surfaces of a plasma chamber in which substrates such as silicon wafers are processed. The method includes cleaning the chamber such as by a wet clean or in-situ plasma clean, introducing a conditioning gas into the chamber, energizing |
| 6350317 |
Linear drive system for use in a plasma processing system |
February 26, 2002 |
| A linear drive assembly for moving a body associated with processing a substrate is disclosed. The linear drive assembly includes a first gear and a second gear, which is operatively engaged with the first gear. The linear drive assembly further includes a positioning member having a fir |
| 6347977 |
Method and system for chemical mechanical polishing |
February 19, 2002 |
| A system for chemical mechanical polishing, and a method of chemical mechanical polishing and the preparation of wafer surfaces is provided. The preparation can either be a polishing operation or a buffing operation. The chemical mechanical polishing system includes a carrier to hold |
| 6345404 |
Wafer cleaning apparatus |
February 12, 2002 |
| An apparatus for cleaning a wafer oriented vertically is provided. The apparatus includes a first brush and a second brush located horizontally from the first brush. During use, a wafer is oriented vertically the first and second brushes. The brushes are brought into contact with the waf |
| 6344151 |
Gas purge protection of sensors and windows in a gas phase processing reactor |
February 5, 2002 |
| A gas purged viewport for endpoint detection in a gas phase processing chamber is provided which prevents contamination of an optical monitoring window by use of a purge gas flow. The purge gas purges the viewport and prevents deposition of byproducts and contaminants on the window which |
| 6344105 |
Techniques for improving etch rate uniformity |
February 5, 2002 |
| Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch r |
| 6341574 |
Plasma processing systems |
January 29, 2002 |
| A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation |
| 6340326 |
System and method for controlled polishing and planarization of semiconductor wafers |
January 22, 2002 |
| A system and method for polishing semiconductor wafers includes a rotatable polishing pad movably positionable in a plurality of partially overlapping configurations with respect to a semiconductor wafer. A pad dressing assembly positioned coplanar, and adjacent, to the wafer provides in |
| 6337277 |
Clean chemistry low-k organic polymer etch |
January 8, 2002 |
| A method of cleanly etching an organic polymer layer disposed over a substrate is disclosed. The invention is particularly useful in damascene processing where openings are etched in the organic polymer layer to form interconnects. The method includes lowering the temperature of the |
| 6336845 |
Method and apparatus for polishing semiconductor wafers |
January 8, 2002 |
| A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process pa |
| 6334229 |
Apparatus for cleaning edges of contaminated substrates |
January 1, 2002 |
| An apparatus for cleaning edges of substrates is described. The present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based on friction and/or a difference in tangential velocity at a point of contact between the wafer and the cleaning mechanism. |
| 6333272 |
Gas distribution apparatus for semiconductor processing |
December 25, 2001 |
| A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a |
| 6328642 |
Integrated pad and belt for chemical mechanical polishing |
December 11, 2001 |
| An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface. |
| 6328640 |
Wafer preparation apparatus including rotatable wafer preparation assemblies |
December 11, 2001 |
| An apparatus for preparing a semiconductor wafer is provided. The apparatus includes a pair of drive rollers disposed so as to support a semiconductor wafer in a substantially vertical orientation. Each of the drive rollers is configured to be coupled to a drive belt for rotating the dri |
| 6328637 |
Method and apparatus for conditioning a polishing pad used in chemical mechanical planarization |
December 11, 2001 |
| A method and apparatus for conditioning a polishing pad is described. The method includes steps of moving a cylindrical roller having an abrasive substance affixed to it against a moving polishing pad. The roller may be passively rotated by contact with the polishing pad, or actively |
| 6328042 |
Wafer cleaning module and method for cleaning the surface of a substrate |
December 11, 2001 |
| In a method for cleaning a surface of a substrate an amount of a solution is applied on a surface of the substrate. After the solution is applied on the surface, crystallization of the solution is initiated to form a liquid-crystal mixture. Once the liquid-crystal mixture is formed, |
| 6326064 |
Process for depositing a SiOx film having reduced intrinsic stress and/or reduced hydrogen conte |
December 4, 2001 |
| A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherein a vapor phase etchant is introduc |
| 6325706 |
Use of zeta potential during chemical mechanical polishing for end point detection |
December 4, 2001 |
| A technique for utilizing a sensor to monitor fluid pressure from a fluid bearing located under a polishing pad to detect a polishing end point. A sensor is located at the leading edge of a fluid bearing of a linear polisher, which is utilized to perform chemical-mechanical polishing on |
| 6324715 |
Apparatus for cleaning semiconductor substrates |
December 4, 2001 |
| A cleaning method and apparatus using very dilute Standard Clean 1 (SC1) for cleaning semiconductor substrates, including silicon wafers. The SC1 is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This deliver |
| 6322661 |
Method and apparatus for controlling the volume of a plasma |
November 27, 2001 |
| A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic |
| 6320320 |
Method and apparatus for producing uniform process rates |
November 20, 2001 |
| A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF pow |
| 6319355 |
Plasma processor with coil responsive to variable amplitude rf envelope |
November 20, 2001 |
| A vacuum plasma processor includes a coil for reactively exciting a plasma so plasma incident on a workpiece has substantially uniformity. The coil and a window which reactively couples fields from the coil to the plasma have approximately the same diameter. An r.f. source supplies a pul |
| 6319330 |
Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
November 20, 2001 |
| Provided is a method for cleaning hydrophobic surfaces, such as low K dielectric organic or inorganic surfaces as well as metallization surfaces of a semiconductor wafer. The method includes: (a) applying a surfactant solution to the surface; (b) scrubbing the surface; and (c) spin-rinsi |
| 6316169 |
Methods for reducing profile variation in photoresist trimming |
November 13, 2001 |
| A method of removing photoresist material from a semiconductor substrate includes providing a semiconductor substrate having a patterned photoresist mask. A layer comprised of polymer material is formed over the patterned photoresist mask. The layer comprised of polymer material and a |
| 6315634 |
Method of optimizing chemical mechanical planarization process |
November 13, 2001 |
| A method for determining an optimized set of polishing parameters is disclosed. a wafer is polished using one set of polishing parameters, and a first polishing result can then be determined. The wafer is then polished using a second set of polishing parameters, wherein at least one |
| 6309979 |
Methods for reducing plasma-induced charging damage |
October 30, 2001 |
| A method in a high density plasma chamber for protecting a semiconductor substrate from charging damage from plasma-induced current through the substrate while etching through a selected portion of a conductive layer above the substrate. The method includes performing a bulk etch at leas |
| 6306312 |
Method for etching a gold metal layer using a titanium hardmask |
October 23, 2001 |
| Disclosed is an inventive method for etching a gold metallization in a plasma processing chamber. The method includes introducing a substrate having a gold layer and an overlying titanium hardmask layer into the plasma processing chamber. The hardmask is first etched using conventional |
| 6306244 |
Apparatus for reducing polymer deposition on substrate support |
October 23, 2001 |
| In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring |
| 6306019 |
Method and apparatus for conditioning a polishing pad |
October 23, 2001 |
| A method and apparatus for conditioning a polishing pad is described. The method includes steps of moving a cylindrical roller having an abrasive substance affixed to it against a moving polishing pad. The roller may be actively rotated or reciprocated at variable rates, while maintainin |
| 6305677 |
Perimeter wafer lifting |
October 23, 2001 |
| The invention relates to an apparatus for lifting a substrate from a surface of a chuck subsequent to a processing step. The apparatus includes a perimeter pin for lifting the substrate from the surface of the chuck to a first position wherein the substrate is disposed on the perimeter p |
| 6305565 |
Transport chamber and method for making same |
October 23, 2001 |
| A transport chamber implemented to retrieve a substrate from at least one storage facility that is external to the transport chamber and transition the substrate into at least one processing chamber that is external to the transport chamber is provided. The transport chamber includes a b |
| 6303551 |
Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper fil |
October 16, 2001 |
| A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia |
| 6303045 |
Methods and apparatus for etching a nitride layer in a variable-gap plasma processing chamber |
October 16, 2001 |
| A method for reducing gap-drive wear while employing a variable-gap plasma processing chamber for etching at least partially through a Si.sub.3 N.sub.4 layer disposed on a substrate. The method includes introducing the substrate into the variable-gap plasma processing chamber while a gap |
| 6303044 |
Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing |
October 16, 2001 |
| The end of a cleaning process of a vacuum workpiece processing chamber evacuated to a constant pressure vacuum condition is controlled. The chamber is cleaned by exciting a cleaning gas to a plasma state by a field including an electric component. The process is terminated in response to |
| 6302966 |
Temperature control system for plasma processing apparatus |
October 16, 2001 |
| A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature |
| 6301510 |
Method and apparatus to calibrate a semi-empirical process simulator |
October 9, 2001 |
| A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in |
| 6297163 |
Method of plasma etching dielectric materials |
October 2, 2001 |
| A semiconductor manufacturing process wherein deep and narrow 0.3 micron and smaller openings are plasma etched in a dielectric layer such as doped and undoped silicon oxide. The etching gas includes at least one fluorocarbon reactant and carbon monoxide and optionally a carrier gas |
| 6296778 |
Method and apparatus for simulating standard test wafers |
October 2, 2001 |
| A method and apparatus are provided for simulating a standard wafer in semiconductor manufacturing equipment. The apparatus includes a support layer suitable for being handled by the semiconductor manufacturing equipment. Applied to the support layer is a mixture including a process |
| 6294027 |
Methods and apparatus for cleaning semiconductor substrates after polishing of copper film |
September 25, 2001 |
| A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an ac |
| 6290780 |
Method and apparatus for processing a wafer |
September 18, 2001 |
| A method and apparatus for processing wafer edges is disclosed. Pressure applied to the wafer at one end of A brush/pad assembly is greater than at the opposite end of the brush/pad assembly. The increased pressure causes wafer rotation to slow or to reverse direction as compared to less |
