| Patent Number |
Title Of Patent |
Date Issued |
| 6526355 |
Integrated full wavelength spectrometer for wafer processing |
February 25, 2003 |
| A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An inp |
| 6521050 |
Methods for evaluating advanced wafer drying techniques |
February 18, 2003 |
| Methods for evaluating advanced wafer drying techniques are provided. An exemplary method includes applying a solution containing an analytically detectable compound to a substrate prior to a desired drying operation. The method then provides for the inspection and analysis of the substr |
| 6520833 |
Oscillating fixed abrasive CMP system and methods for implementing the same |
February 18, 2003 |
| A chemical mechanical polishing (CMP) apparatus is provided. A first roller is situated at a first point and a second roller situated at a second point, such that the first point is separate from the second point. A polishing pad strip is also included and has a first end secured to the |
| 6518705 |
Method and apparatus for producing uniform process rates |
February 11, 2003 |
| An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, wher |
| 6518174 |
Combined resist strip and barrier etch process for dual damascene structures |
February 11, 2003 |
| A method of etching a stack is provided. Generally, a trench patterned resist layer is placed over a dielectric layer of the stack. A trench is partially etched into the dielectric layer. A simultaneous stripping of the trench patterned resist layer, etching the barrier layer, and etchin |
| 6517426 |
Composite polishing pad for chemical-mechanical polishing |
February 11, 2003 |
| A composite polishing pad for use in a linear chemical-mechanical polishing apparatus is provided. The pad comprises a hard polishing pad having a polishing surface and an attachment surface opposite the polishing surface, the attachment surface comprising a border comprising an adhe |
| 6517418 |
Method of transporting a semiconductor wafer in a wafer polishing system |
February 11, 2003 |
| A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process pa |
| 6514378 |
Method for improving uniformity and reducing etch rate variation of etching polysilicon |
February 4, 2003 |
| An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine-containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor subs |
| 6508913 |
Gas distribution apparatus for semiconductor processing |
January 21, 2003 |
| A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a |
| 6506685 |
Perforated plasma confinement ring in plasma reactors |
January 14, 2003 |
| The invention relates to a plasma processing reactor apparatus for semiconductor processing a substrate. The apparatus includes a chamber. The apparatus further includes a top electrode configured to be coupled to a first RF power source having a first RF frequency and a bottom electrode |
| 6506254 |
Semiconductor processing equipment having improved particle performance |
January 14, 2003 |
| A ceramic part having a surface exposed to the interior space, the surface having been shaped and treated to reduce particles thereon by formation of an oxide layer on the surface in which particles produced by shaping are incorporated in the oxide layer optionally followed by stripping |
| 6505636 |
Apparatus for wafer carrier in-process clean and rinse |
January 14, 2003 |
| A system and method for rinsing and cleaning a wafer carrier and a semiconductor wafer mounted thereon during a chemical mechanical planarization (CMP) process is provided. The system includes a head spray assembly that comprises a plurality of spray nozzles positioned therein. The h |
| 6505635 |
Lifting and rinsing a wafer |
January 14, 2003 |
| A nozzle that extends telescopically upward is used to elevate a wafer without contacting the wafer. The nozzle includes a stationary hollow cylinder, closed at its lower end and open at its upper end, within which a spool is disposed to slide vertically. In its lowest position the spool |
| 6505417 |
Method for controlling airflow on a backside of a semiconductor wafer during spin processing |
January 14, 2003 |
| In a method for controlling airflow on a backside of a semiconductor wafer during spin processing, a wafer backing plate is first disposed below a semiconductor wafer. Air is then supplied to the volume defined by the wafer backing plate and the semiconductor wafer. The air may be suppli |
| 6503129 |
Activated slurry CMP system and methods for implementing the same |
January 7, 2003 |
| A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems is provided. The method includes applying radiation to an amount of slurry before the slurry is applied to the upper layer of the wafer. In one example, the |
| 6502054 |
Method of and apparatus for dynamic alignment of substrates |
December 31, 2002 |
| A wafer is transported on a blade of a robot along a path through a port into a module of semiconductor manufacturing equipment. The port has a transverse axis intersecting the path. Dynamic alignment uses two through-beam sensors positioned along the transverse axis to determine the |
| 6500056 |
Linear reciprocating disposable belt polishing method and apparatus |
December 31, 2002 |
| An apparatus for chemically mechanically planarizing a semiconductor wafer is disclosed having a continuous polishing strip with first side having a fixed abrasive surface and a second side opposite the first side. In one embodiment, a first drive roller holds a first end of the polishin |
| 6497241 |
Hollow core spindle and spin, rinse, and dry module including the same |
December 24, 2002 |
| A spindle includes a hollow central shaft having an upper end and a lower end. The hollow central shaft defines a channel for transmitting fluid through the spindle. A wafer backing plate is disposed at the upper end of the hollow central shaft. The wafer backing plate reduces particle |
| 6495464 |
Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool |
December 17, 2002 |
| A method of creating and using a polishing substrate having a coating layer that includes providing a substrate having a predetermined pattern disposed on a surface of the substrate and coating the surface of the substrate with an abrasive to form a coated substrate conforming to the |
| 6492774 |
Wafer area pressure control for plasma confinement |
December 10, 2002 |
| A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confine |
| 6490536 |
Integrated load simulator |
December 3, 2002 |
| A load simulator and switch are connected to a power source of a plasma processing device. The switch allows the load simulator to be electrically connected to the power source to allow testing of the power source. The switch and load simulator allow the testing of the power source witho |
| 6489245 |
Methods for reducing mask erosion during plasma etching |
December 3, 2002 |
| A method for reducing erosion of a mask while etching a feature in a first layer underlying the mask is disclosed. The first layer is disposed on a substrate, with the substrate being positioned on a chuck within in a plasma processing chamber. The method includes flowing an etchant sour |
| 6488568 |
Optical view port for chemical mechanical planarization endpoint detection |
December 3, 2002 |
| An optical endpoint system for a CMP system with a viewport located off-center on the platen, said view port being adjustable in height so that the window of the viewport can be made flush with the top of the polishing pad. |
| 6488040 |
Capillary proximity heads for single wafer cleaning and drying |
December 3, 2002 |
| A wafer cleaner and dryer to be used in wafer manufacturing operations is provided. The wafer cleaner and dryer has a proximity head which moves toward a wafer surface to complete either a cleaning or a drying operation. The proximity head includes a plurality of source inlets where |
| 6486550 |
Locking mechanism for detachably securing a wafer carrier to a conveyor |
November 26, 2002 |
| A system and method for detachably securing a locking mechanism to a housing is provided. The locking mechanism comprises a cam ring, a retention ring and a plurality of locking elements. The cam ring and the retention ring are slidably coupled and concentric with respect to each oth |
| 6486070 |
Ultra-high oxide to photoresist selective etch of high-aspect-ratio openings in a low-pressure, |
November 26, 2002 |
| An etch that provides a high oxide to photoresist selectivity in a low-pressure, high-density plasma is provided. An extremely high reverse RIE lag is achieved, wherein the etching of small high-aspect ratio openings is possible, but that of large openings is not. A high-density plas |
| 6483690 |
Ceramic electrostatic chuck assembly and method of making |
November 19, 2002 |
| A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the |
| 6482678 |
Wafer preparation systems and methods for preparing wafers |
November 19, 2002 |
| Wafer preparation systems and methods for wafer preparation are provided. The wafer preparation system includes a scrubber unit and a dryer unit arranged vertically with the dryer unit above the scrubber unit. The scrubber unit is configured to receive a wafer for mechanical scrub cl |
| 6481723 |
Lift pin impact management |
November 19, 2002 |
| A pin stop and method of implementation suitable for use lift pin assemblies used in semiconductor process environments is provided. The pin stop includes a pin shaft and a circular pin head with soft stop and hard stop features defined thereon. The soft stop feature is defined in a grov |
| 6481447 |
Fluid delivery ring and methods for making and implementing the same |
November 19, 2002 |
| A fluid delivery module for use in preparing a substrate is provided. The fluid delivery module includes a process bowl designed to contain a substrate to be prepared. The process bowl has a bottom wall and a sidewall. The fluid delivery module further includes a fluid delivery ring |
| 6479443 |
Cleaning solution and method for cleaning semiconductor substrates after polishing of copper fil |
November 12, 2002 |
| A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid, an amount of ammonium fluoride, and an amount of hydrogen fluoride in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.09% by weight to about |
| 6477786 |
Apparatus for drying batches of disks |
November 12, 2002 |
| Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the |
| 6475336 |
Electrostatically clamped edge ring for plasma processing |
November 5, 2002 |
| An edge ring clamping assembly wherein an edge ring is supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and |
| 6475332 |
Interlocking chemical mechanical polishing system |
November 5, 2002 |
| An interlocking polishing belt apparatus is disclosed. The interlocking polishing belt apparatus includes an interlocking belt, which includes a plurality of studs each having an upper stud end and a lower stud end. In addition, the interlocking polishing belt apparatus includes a polish |
| 6475298 |
Post-metal etch treatment to prevent corrosion |
November 5, 2002 |
| A method of improving the post-etch corrosion resistance of aluminum-containing wafers by performing a two-step post-etch passivation sequence which does not involve a plasma. In the first step the pressure is high, relative to typical passivation procedures, and the wafer temperatur |
| 6471566 |
Sacrificial retaining ring CMP system and methods for implementing the same |
October 29, 2002 |
| A retaining ring structure of a carrier head designed for use in a chemical mechanical polishing system (CMP) is provided. The retaining ring includes a retaining ring support and a sacrificial retaining ring, which is designed to confine a substrate to be polished. The included sacrific |
| 6468134 |
Method and apparatus for slurry distribution |
October 22, 2002 |
| A method and apparatus for slurry distribution is provided. The apparatus for the distribution of slurry over a polishing pad surface used in chemical mechanical polishing includes a roller positioned over a polishing pad surface. The roller is connected with a gimbaling attachment t |
| 6465159 |
Method and apparatus for side wall passivation for organic etch |
October 15, 2002 |
| A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within |
| 6464843 |
Contamination controlling method and apparatus for a plasma processing chamber |
October 15, 2002 |
| A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize c |
| 6464796 |
Methods for applying fluid through a brush interflow distributor |
October 15, 2002 |
| A method of applying a fluid to a brush is provided. The method includes outputting a flow of fluid from a shaft to an area between the shaft and a distributor where the flow of fluid is restricted by the distributor to generate a uniform pressure buildup inside of the distributor. The m |
| 6463875 |
Multiple coil antenna for inductively-coupled plasma generation systems |
October 15, 2002 |
| A radio frequency plasma multiple-coil antenna allows for controllable, uniform inductive coupling within a plasma reactor. According to exemplary embodiments, multiple coils are positioned on a dielectric window of a plasma chamber, and are powered by a single radio frequency generator |
| 6461974 |
High temperature tungsten etching process |
October 8, 2002 |
| A method of etching a tungsten film, comprising the steps of supporting a semiconductor substrate having a tungsten film thereon on a substrate support in an interior of a plasma etcher, supplying process gas to the interior of the plasma etcher, energizing the process gas into a plasma |
| 6461224 |
Off-diameter method for preparing semiconductor wafers |
October 8, 2002 |
| Methods for preparing semiconductor wafers are disclosed. A method includes rotating a semiconductor wafer in a vertical orientation, and the wafer having first and second opposing surfaces. The method further includes contacting each of the first and second opposing surfaces of the wafe |
| 6457199 |
Substrate processing in an immersion, scrub and dry system |
October 1, 2002 |
| A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tank |
| 6454637 |
Edge instability suppressing device and system |
September 24, 2002 |
| The present invention provides device and system for suppressing edge instability during a chemical mechanical planarization (CMP) process for planarizing a surface topography on a wafer. A wafer carrier holds and rotates a wafer on a polishing surface of a polishing pad that is arranged |
| 6452775 |
Electrostatic chuck and method for manufacturing the same |
September 17, 2002 |
| An electrostatic chuck includes a metal substrate. A conductive ceramic layer is disposed above the metal substrate. A high purity barrier layer is disposed above the conductive ceramic layer. The high purity barrier layer preferably has a thickness of not more than about 200 .mu.m and a |
| 6451159 |
Grounded centering ring for inhibiting polymer build-up on the diaphragm of a manometer |
September 17, 2002 |
| A grid protects a manometer diaphragm from plasma. A plasma chamber is used to generate a plasma. A manometer is used to measure the pressure in the plasma chamber. A grounded electrically conductive grid is used to screen out ions in the plasma before they reach a diaphragm in the manom |
| 6451158 |
Apparatus for detecting the endpoint of a photoresist stripping process |
September 17, 2002 |
| A method and apparatus for detecting the endpoint of a photoresist stripping process. A wafer to be stripped of photoresist is disposed inside a stripping chamber. After substantially all the photoresist is stripped from the wafer, the rate of a reaction of O and NO to form NO.sub.2 |
| 6451157 |
Gas distribution apparatus for semiconductor processing |
September 17, 2002 |
| A baffle plate of a showerhead gas distribution system and method of using the baffle plate wherein the baffle plate is effective for reducing particle and/or metal contamination during processing of semiconductor substrates such as silicon wafers. The showerhead can be a showerhead |
| 6447380 |
Polishing apparatus and substrate retainer ring providing continuous slurry distribution |
September 10, 2002 |
| A polishing apparatus includes a rotatable head assembly including a substrate retainer that incorporates a cavity in the face surface of the substrate retainer for temporarily holding polishing slurry during operation of the polishing apparatus. The cavity resides in the face surfac |
