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LG Semicon Co., Ltd. Patents
Assignee:
LG Semicon Co., Ltd.
Address:
Cheongju-Si, Chungcheongbuk-Do, KR
No. of patents:
1011
Patents:












Patent Number Title Of Patent Date Issued
7479797 TDDB test pattern and method for testing TDDB of MOS capacitor dielectric January 20, 2009
A Time Dependent Dielectric Breakdown (TDDB) test pattern circuit, which can reduce testing time and statistically improve a precision of measurement as well as a method for testing the test pattern circuit are discussed. Typically, a test pattern circuit includes in plurality of uni
7170309 TDDB test pattern and method for testing TDDB of MOS capacitor dielectric January 30, 2007
A Time Dependent Dielectric Breakdown (TDDB) test pattern circuit, which can reduce testing time and statistically improve a precision of measurement as well as a method for testing the test pattern circuit are discussed. Typically, a test pattern circuit includes in plurality of uni
6852606 Method for forming isolation layer of semiconductor device and semiconductor device February 8, 2005
A method for forming an isolation layer of a semiconductor device which is capable of improving isolation characteristics of a highly integrated semiconductor device. The method includes the steps of forming a first insulating layer on a substrate; forming both a first recess in the firs
6845441 User initiated microcode modification January 18, 2005
An instruction decoding unit in a microcomputer is disclosed having an instruction word capable of being selected by a user to conveniently produce application software while maintaining security. The decoding unit in a microcomputer includes an instruction register for storing instr
6831362 Diffusion barrier layer for semiconductor device and fabrication method thereof December 14, 2004
The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insula
6781401 TDDB test pattern and method for testing TDDB of MOS capacitor dielectric August 24, 2004
A Time Dependent Dielectric Breakdown (TDDB) test pattern circuit, which can reduce testing time and statistically improve a precision of measurement as well as a method for testing the test pattern circuit are discussed. Typically, a test pattern circuit includes in plurality of unit
6720998 Device for managing snap shot in USB camera and method therefor April 13, 2004
Device and method for managing a snap shot in a USB camera, the device including a camera for taking, and digitizing an image, and providing the image through an end point exclusive for an image, an interface unit for inserting either a frame sync pattern between frames of image data
6657253 Memory of multilevel quantum dot structure and method for fabricating the same December 2, 2003
Memory of a multilevel quantum dot structure and a method for fabricating the same, is disclosed, the method including the steps of (1) forming a first insulating layer on a substrate, (2) repeating formation of a conductive layer and a second insulating layer on the first insulating
6637443 Semiconductor wafer cleaning apparatus and method October 28, 2003
A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating p
6627929 Solid state CCD image sensor having a light shielding layer September 30, 2003
Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from
6558985 Charge coupled device and method of fabricating the same May 6, 2003
A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form, includes a first interlevel insulating layer and first transfer gate sequentially formed
6555881 Mask ROM cell and method of fabricating the same April 29, 2003
Mask ROM cell and method of fabricating the same, is disclosed, including a semiconductor substrate of a first conductivity type, a plurality of impurity diffusion regions of a second conductivity type, formed in the semiconductor substrate in one direction, having a predetermined distan
6532976 Semiconductor wafer cleaning apparatus March 18, 2003
A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating p
6518179 Method of controlling hillock formation of platinum thin film of semiconductor memory device by February 11, 2003
A method of forming metal thin film of a memory device includes the steps of forming a metal layer on a semiconductor substrate, forming uniform grains on a surface of the metal layer, and forming a dielectric layer on the metal layer.
6496223 Solid-state image sensor December 17, 2002
A solid-state image sensor in which an interface area between a vertical charge coupled device (VCCD) and a horizontal charge coupled device (HCCD) is formed under the HCCD, thereby maximizing charge-transferring efficiency is disclosed, including a substrate; a well formed in the su
6489644 Semiconductor memory device and method for fabricating the same December 3, 2002
A semiconductor memory device and method of fabricating the same, which improves adhesion of the lower electrode of a ferroelectric planar capacitor, and prevents inter-diffusion between the Pt electrode of the capacitor and adhesion layer placed under the Pt electrode. The semicondu
6482734 Diffusion barrier layer for semiconductor device and fabrication method thereof November 19, 2002
The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insula
6482712 Method for fabricating a bipolar semiconductor device November 19, 2002
A method for fabricating a bipolar device, including the steps of forming an epitaxial growth retarding layer on a substrate at a predetermined angle, forming a collector layer on the substrate so that the collector layer is adjacent the epitaxial growth retarding layer and has an inclin
6482667 Solid state image sensor device and method of fabricating the same November 19, 2002
A solid state image sensor device and a method of fabricating the same are disclosed in the present invention. A solid state image sensor device includes a semiconductor substrate, a well region in the semiconductor substrate, a horizontal charge transmission region in the well region, a
6479346 Semiconductor memory device and fabrication method thereof November 12, 2002
In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a
6455380 Semiconductor device and method for fabricating the same September 24, 2002
A semiconductor device is disclosed, including: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a first gate insulating layer formed between the gate electrode and semiconductor substrate, and formed at a first region including one edge of the gate
6438214 Answering system for a communication device August 20, 2002
The present invention provides an answering system for a communication device which, when set up with an automatic answering mode because a called party is absent or does not want to answer it, responds to a calling party by outputting automatically an responding message that a telep
6434112 Frame transmission method August 13, 2002
A method of transmitting a frame on a communications medium by a node of a local area network in which a node without priorit employs a conventional IEEE 802.3 CSMA/CD medium-access method and a node with priority employs the conventional IEEE 802.3 CSMA/CD medium-access method less the
6414670 Gate driving circuit in liquid crystal display July 2, 2002
A gate driving circuit in a liquid crystal display is disclosed which can minimize a power consumption by avoiding unnecessary drive of gate line drivers. The gate driving circuit is used in a liquid crystal display having a liquid crystal panel with thin film transistors and pixel e
6413804 Method of fabrication of thin film transistor July 2, 2002
A method of fabricating a thin film transistor includes the steps of forming an active layer on a substrate, forming a gate insulating layer covering the active layer and the substrate, forming a gate on a portion of the gate insulating layer and over the active layer, forming an ins
6407415 Solid state image sensor and method for fabricating the same June 18, 2002
Solid state image sensor having photodiode regions for converting optical image signal into an electrical signal and charge coupled device regions for transferring video charges generated in the photodiode regions in one direction, including first microlens layers spaced from one another
6401146 Device and method for controlling PCI ethernet June 4, 2002
Device and method for controlling a PCI ethernet in data transmission between a host computer and various media, is disclosed, the method including the steps of (1) storing data to be transmitted in a memory in succession until an amount of the data becomes greater than a threshold v
6399420 Ultra high density integrated circuit BLP stack and method for fabricating the same June 4, 2002
BLP stack is disclosed which has a higher reliability and a less area of mounting for providing a denser package, including a first package having external power connection leads each started to be exposed through a bottom thereof and extended to a top surface through a side surface
6391725 Semiconductor device and method for fabricating the same May 21, 2002
A semiconductor device which is applied to access transistors of an SRAM cell to improve its operation performance and a method for fabricating the same are disclosed. The semiconductor device includes a gate insulating layer formed on a semiconductor substrate, a gate electrode formed o
6383876 MOS device having non-uniform dopant concentration and method for fabricating the same May 7, 2002
A metal-oxide-semiconductor (MOS) device in which the nonuniform dopant concentration in the channel region is obtained by means of ion implantation through a polysilicon gate electrode of nonuniform cross section, which is itself obtained by oxidizing the polysilicon using a semirec
6383834 Charge coupled device May 7, 2002
The charge coupled device (CCD) formed according the method of the present invention includes a substrate, at least two photodiodes formed in the substrate and a first insulating layer formed on the substrate. A first transfer gate is formed on a portion of the first insulating layer bet
6380607 Semiconductor device and method for reducing parasitic capacitance between data lines April 30, 2002
A wire in a semiconductor device and the fabricating the same are disclosed in the present invention. A semiconductor device includes a semiconductor substrate, a plurality of conductive layers on the semiconductor substrate, and an insulating layer on the semiconductor substrate inc
6373459 Device and method for driving a TFT-LCD April 16, 2002
A device and method for driving a liquid crystal display (LCD). The device includes a mixer for temporarily storing digital picture signals of a plurality of channels and outputting the digital picture signals according to a predetermined order of polarity based on polarity control data,
6366322 Horizontal charge coupled device of CCD image sensor April 2, 2002
The present invention relates to a HCCD of a CCD image sensor comprising a channel stop region, a BCCD channel formed on the channel stop region, a plurality of first poly gates and a plurality of second poly gates formed on the BCCD channel and alternately arranged in a partially overla
6365972 Method for forming a metal wiring structure of a semiconductor device April 2, 2002
A metal wiring stricture includes a conduction line, an insulator film for electrically insulating the conduction line, and a transmutation layer formed as the density of a portion of the insulator film adjacent to the conduction line is increased or by adding impurities to the insulator
6358805 Method of making a SOI device having fixed channel threshold voltage March 19, 2002
In a semiconductor device and method for manufacturing the same, a buried insulating layer is formed on a semiconductor substrate, multiple depletion regions of a first conductivity type are formed on the buried insulating layer and separated from one another, a field oxide layer is
6358768 Method for fabricating a solid-state image sensor having an HCCD and VCCDs March 19, 2002
A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the entire process and maximizing the
6351135 TDDB test pattern and method for testing TDDB of MOS capacitor dielectric February 26, 2002
TDDB test pattern which can reduce a test time period and improve a precision of a measurement result statistically; and a method for testing TDDBs of MOS capacitor dielectric films using the same, the TDDB test pattern including a plurality of unit test pattern cells each having an
6348715 SOI (silicon on insulator) device February 19, 2002
A SOI device in which floating body effect is reduced to improve performance. The SOI device including a semiconductor substrate; a first buried insulating film formed on the semiconductor substrate; a first conductivity type silicon layer formed on the first buried insulating film;
6348708 Semiconductor device utilizing a rugged tungsten film February 19, 2002
A DRAM cell capacitor having a high capacitance is obtained by forming a lower capacitor electrode of TiN and a roughened tungsten film on the TiN layer. A high dielectric constant film, such as tantalum pentaoxide, is then provided on the tungsten film and an upper capacitor electrode i
6340619 Capacitor and method of fabricating the same January 22, 2002
A capacitor includes a substrate, an insulating layer on the substrate, the insulating layer having a contact hole, a first storage node in the contact hole and on the insulating layer, a second storage node on a peripheral portion of the first storage node, the second storage node h
6339622 Data transmission device January 15, 2002
A data transmission device which improves data transmission efficiency is disclosed. A data transmission device includes a decoder converting a first binary data to a ternary data, a ternary data generator coupled to the decoder and generating three logic levels corresponding to a power
6335553 Nonvolatile semiconductor memory and method of fabrication January 1, 2002
A contactless, nonvolatile metal oxide semiconductor memory device having a rectangular array of memory cells interconnected by word-lines in the row direction of the array and bit-lines in the column direction of the array. Each memory cell has a structurally asymmetrical pair of floati
6335243 Method of fabricating nonvolatile memory device January 1, 2002
A method of fabricating a nonvolatile memory device having a first conductivity type substrate, includes the steps of forming a gate insulating layer on the entire surface of the semiconductor substrate, forming a plurality of floating gate lines on the gate insulating layer, forming
6326312 Contact hole of semiconductor and its forming method December 4, 2001
Provided with a contact hole of a semiconductor device and its forming method which is adapted to form double slopes in the insulating layer, with the contact hole including an insulating layer formed on a semiconductor substrate, and a contact hole having double slopes, exposing a d
6319768 Method for fabricating capacitor in dram cell November 20, 2001
A method for fabricating a capacitor in a DRAM cell, includes the steps of: forming a plurality of wordlines each having a first cap insulating film on a semiconductor substrate; forming source/drain impurity regions in an active region of the semiconductor substrate on both sides of eac
6303966 SRAM cell having overlapping access transistor and drive transistor gates October 16, 2001
An SRAM cell and method for fabricating the same including first and second access transistors, first and second drive transistors, and first and second load resistors. A first terminal of the first access transistor, a gate terminal of the second drive transistor, and a first load resis
6300157 Solid state image sensor and method for fabricating the same October 9, 2001
Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from
6294803 Semiconductor device having trench with vertically formed field oxide September 25, 2001
A semiconductor device includes a substrate, a plurality of active regions on the substrate, the active regions having recessed and elevated types and being alternatively in parallel with the substrate, respectively, and a plurality of first and second field insulating layers at field re
6291865 Semiconductor device having improved on-off current characteristics September 18, 2001
A semiconductor device and a method of fabricating the same are disclosed in the present invention. The semiconductor device includes a semiconductor substrate, first and second gate insulating layers on the semiconductor layer, the first and second insulating layer having different

 
 
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