| Patent Number |
Title Of Patent |
Date Issued |
| 5835333 |
Negative offset bipolar electrostatic chucks |
November 10, 1998 |
| A bipolar electrostatic chuck system having a bipolar electrostatic chuck for securely holding a wafer on the surface of the bipolar electrostatic chuck. The bipolar electrostatic chuck system includes a negative-offset power supply for providing a positive potential level and a negative |
| 5827437 |
Multi-step metallization etch |
October 27, 1998 |
| A method for etching through a selected portion of a metallization layer of a wafer's layer stack in a high density plasma processing chamber includes performing a main etch by etching at least partially through the metallization layer of the layer stack with a main-etch etchant source g |
| 5824606 |
Methods and apparatuses for controlling phase difference in plasma processing systems |
October 20, 1998 |
| A method in a plasma processing system for modifying a phase difference between a first radio frequency (RF) signal and a second RF signal. The first RF signal is supplied by a first RF power source to a first electrode and the second RF signal is supplied by a second RF power source |
| 5824605 |
Gas dispersion window for plasma apparatus and method of use thereof |
October 20, 1998 |
| A gas dispersion window for a plasma etching or plasma deposition reactor including a housing having a chamber in which an article can be treated with plasma. The housing includes at least one inlet port connected to an interior of the chamber through which process gas can be supplied to |
| 5822213 |
Method and apparatus for determining the center and orientation of a wafer-like object |
October 13, 1998 |
| A device and method for determining the center and orientation of a circular workpiece such as a semiconductor wafer. A laser diode projects a sheet of light onto a linear array of charge coupled devices which measures light intensity as a semiconductor wafer is rotated with its oute |
| 5820723 |
Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum |
October 13, 1998 |
| A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extend |
| 5812361 |
Dynamic feedback electrostatic wafer chuck |
September 22, 1998 |
| An electrostatic chuck system having an electrostatic chuck for securely holding a wafer on a surface of the electrostatic chuck. The electrostatic chuck system comprises a wafer bias sensor coupled to a first portion of the electrostatic chuck for sensing an alternating current signal a |
| 5805408 |
Electrostatic clamp with lip seal for clamping substrates |
September 8, 1998 |
| An electrostatic clamping apparatus with lip seal for holding substrates in a vacuum processing chamber. The apparatus includes an electrostatic clamp, a sealing member surrounding the electrostatic clamp, and an edge ring surrounding the sealing member and holding the sealing member in |
| 5803107 |
Method and apparatus for pressure control in vacuum processors |
September 8, 1998 |
| A method and apparatus is disclosed for controlling the pressure of reaction chamber in wafer processing equipment. The disclosed apparatus and method uses a ballast port for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The discl |
| 5801945 |
Scheduling method for robotic manufacturing processes |
September 1, 1998 |
| A scheduling method for robotic manufacturing processes that can be used in the processing of semiconductor wafers employs planning of dispatch times for wafers based on predetermined durations for some operations and estimated durations for other operations. Dispatch is based on the act |
| 5800619 |
Vacuum plasma processor having coil with minimum magnetic field in its center |
September 1, 1998 |
| A substantially planar coil of a vacuum plasma processor has plural turns for exciting gas in the processor to a plasma state in response to r.f. coil energization. The coil is located outside the processor and surrounded by a shield tending to cause magnetic flux coupled from periph |
| 5798904 |
High power electrostatic chuck contact |
August 25, 1998 |
| In a vacuum processing chamber, an exemplary electrical contact assembly between an electrostatic chuck and a voltage source comprises a flexible wire connected at one end to the underside of the electrostatic chuck and at the other end to a conductive socket fixed in the electrode cap. |
| 5796486 |
Apparatus method for determining the presence or absence of a wafer on a wafer holder |
August 18, 1998 |
| The presence and absence of a semiconductor wafer on a wafer holder in a vacuum chamber having an optically transparent window is detected by an optical system including a source of optical energy positioned outside the chamber and a receiver for the optical energy positioned outside the |
| 5796066 |
Cable actuated drive assembly for vacuum chamber |
August 18, 1998 |
| In a vacuum processing chamber, a drive assembly for moving an article such as a substrate, clamp or pin lifter. The drive assembly includes at least one cable actuated assembly having a pin and housing mechanically coupled to a cable and sleeve, respectively, so that movement of the cab |
| 5793192 |
Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing |
August 11, 1998 |
| A method for clamping a wafer to an electrostatic chuck having a substantially resistive dielectric layer disposed thereon. The method includes the step of providing a build-up voltage having a first polarity to a pole of the electrostatic chuck to cause a potential difference to bui |
| 5793162 |
Apparatus for controlling matching network of a vacuum plasma processor and memory for same |
August 11, 1998 |
| A load including a plasma discharge in a vacuum plasma processing chamber is matched to an r.f. source that supplies sufficient power to the discharge to maintain the discharge. A matching network connected between the source and a plasma excitation component of the chamber includes firs |
| 5791850 |
Vacuum compatible fastener and fastening system |
August 11, 1998 |
| A vacuum compatible fastener useful for fastening a workpiece. The fastener has a head section at an upper end of the fastener of a first diameter. A shank section extends from the head section and includes a spring or spring-like element which allows the fastener to be stretched and |
| 5783496 |
Methods and apparatus for etching self-aligned contacts |
July 21, 1998 |
| A method in a plasma processing chamber for fabricating a semiconductor device having a self-aligned contact. The method includes the step of providing a wafer having a substrate, a polysilicon layer disposed above the substrate, a nitride layer disposed above a polysilicon layer, and an |
| 5772906 |
Mechanism for uniform etching by minimizing effects of etch rate loading |
June 30, 1998 |
| A method for etching a layer stack structure on a substrate is provided. The method includes a step of etching the layer stack to a predefined stopping point using a reverse etch rate loading inducing chemistry. The method also includes a step of etching said layer stack through a target |
| 5770469 |
Method for forming semiconductor structure using modulation doped silicate glasses |
June 23, 1998 |
| A method of fabricating a semiconductor structure utilizing doped silicate glass on a substrate of a wafer. The method includes the step forming a modulation doped silicate glass structure over a first layer of the wafer. The modulation doped silicate glass structure is formed by deposit |
| 5762536 |
Sensors for a linear polisher |
June 9, 1998 |
| A technique for utilizing sensors to monitor the polishing of a semiconductor wafer when a linear polisher is utilized to polish the wafer. The sensors are distributed along the surface or are coupled to openings along the surface to monitor the on-going polishing process. The sensed |
| 5759280 |
Inductively coupled source for deriving substantially uniform plasma flux |
June 2, 1998 |
| A planar coil exciting a plasma of an r.f. vacuum plasma processor for a workpiece processed surface in a chamber includes plural turns. The coil, chamber and workpiece are arranged to produce in the chamber a magnetic flux having substantially greater density in peripheral portions of t |
| 5758680 |
Method and apparatus for pressure control in vacuum processors |
June 2, 1998 |
| A method and apparatus is disclosed for controlling the pressure of reaction chamber in wafer processing equipment. The disclosed apparatus and method uses a ballast port for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The discl |
| 5750211 |
Process for depositing a SiO.sub.x film having reduced intrinsic stress and/or reduced hydrogen |
May 12, 1998 |
| A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by ECR chemical vapor deposition, wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for |
| 5746434 |
Chamber interfacing O-rings and method for implementing same |
May 5, 1998 |
| Disclosed is a method for implementing a vacuum seal between an interface of a transport chamber interface port of a transport chamber and another chamber. The transport chamber being configured to mate with the another chamber in an adjacent relationship. The method includes placing an |
| 5740016 |
Solid state temperature controlled substrate holder |
April 14, 1998 |
| A substrate resting on a substrate surface is inserted into a processing chamber and processed to produce integrated chips. The substrate may be clamped electrostatically to the substrate support surface during processing. The substrate support surface plays a major role in controlli |
| 5738756 |
Method and apparatus for detecting optimal endpoints in plasma etch processes |
April 14, 1998 |
| An improved method for specifying and reliably detecting endpoints in processes such as plasma etching, where the signal-to-noise ratio has been severely degraded due to factors such as "cloudy window" and low ratio of reactive surface area to non-reactive surface area. The improved meth |
| 5737175 |
Bias-tracking D.C. power circuit for an electrostatic chuck |
April 7, 1998 |
| A DC power circuit for a electrostatic chuck adapted for use in a plasma etching system is disclosed. The power circuit receives an input that reflects a voltage bias on the workpiece caused by the application of an RF signal for creating the plasma. A DC power supply outputs a diffe |
| 5731565 |
Segmented coil for generating plasma in plasma processing equipment |
March 24, 1998 |
| A segmented transformer coupled plasma (TCP) coil is provided as a source for generating a uniform plasma in a plasma reactor. The segmented TCP is divided into two or more segment coils which, when connected to an RF source, produces a circulating flow of electrons to cause a magnetic f |
| 5722877 |
Technique for improving within-wafer non-uniformity of material removal for performing CMP |
March 3, 1998 |
| A platen ring for use with a platen on a linear polisher, in which the platen ring is used to reduce fluctuation of the belt/pad assembly as it encounters the platen. The platen ring is disposed around the platen so that a fluctuation of the belt/pad assembly is dampened before the b |
| 5718511 |
Temperature mapping method |
February 17, 1998 |
| In a method for mapping temperatures reached by an object during heating, a thermally sensitive material which, when heated, undergoes a gradual irreversible change is applied to a surface of an object. The object and the material applied thereto are heated. An amount of irreversible cha |
| 5714031 |
Topology induced plasma enhancement for etched uniformity improvement |
February 3, 1998 |
| A plasma discharge electrode having a front surface with a central portion thereof including outlets for discharging reactant gas which forms a plasma and a peripheral portion substantially surrounding the outlets. The peripheral portion has at least one recess for locally enhancing a de |
| 5711998 |
Method of polycrystalline silicon hydrogenation |
January 27, 1998 |
| A method of hydrogenating poly-Si in an electrical device including the step of placing a substrate having a poly-Si component in a radio frequency induced low pressure, high density plasma reactor. The method further includes the step of introducing into the radio frequency induced |
| 5702533 |
Particulate free vacuum compatible pinch seal |
December 30, 1997 |
| A pinch seal in which particle generation by frictional contact is prevented so that the pinch seal can be used in a semiconductor processing apparatus where elimination of particulate contamination is desirable. The pinch seal is particularly adapted for use in connection with a sem |
| 5689215 |
Method of and apparatus for controlling reactive impedances of a matching network connected betw |
November 18, 1997 |
| An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reac |
| 5679215 |
Method of in situ cleaning a vacuum plasma processing chamber |
October 21, 1997 |
| Surfaces having semiconductor oxides, metal oxides and hydrocarbons deposited thereon in a vacuum plasma processing chamber are in situ cleaned by introducing water vapor and SF.sub.6 and/or NF.sub.3 gas in the presence of a plasma discharge. The vapor and gas react to form gaseous H |
| 5671116 |
Multilayered electrostatic chuck and method of manufacture thereof |
September 23, 1997 |
| A ceramic electrostatic chucking device having electrostatic clamping electrodes suitable for clamping wafers and flat panel displays. The chucking device includes a top insulating layer, the clamping electrode, a second insulating layer, a first metallization layer for distributing |
| 5670066 |
Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated |
September 23, 1997 |
| A determination of whether a workpiece is properly positioned on an electrostatic chuck in a vacuum plasma processing chamber is made by measuring the capacitance across a pair of electrodes of the chuck. If the chuck is properly positioned, the workpiece is held in situ on the chuck |
| 5669977 |
Shape memory alloy lift pins for semiconductor processing equipment |
September 23, 1997 |
| A lift pin arrangement for use in semiconductor processing apparatus wherein the lift pins are of a shape memory alloy. The lift pins exhibit superelasticity and/or shape memory effects which allows the lift pins to withstand substantial bending forces without permanent deformation t |
| 5667631 |
Dry etching of transparent electrodes in a low pressure plasma reactor |
September 16, 1997 |
| A method for dry etching an indium tin oxide (ITO) layer disposed above a substrate in a low pressure plasma reactor is disclosed. The method includes a step of placing a substrate having the ITO layer into the low pressure plasma reactor, a step of introducing an etchant gas into the lo |
| 5667197 |
Vacuum chamber gate valve and method for making same |
September 16, 1997 |
| Disclosed is a method for implementing a gate drive valve assembly used to isolate interfacing chambers. The method includes: (a) providing a drive assembly having at least one surface for attaching to a chamber, the drive assembly being mounted to the chamber such that a shaft contained |
| 5658425 |
Method of etching contact openings with reduced removal rate of underlying electrically conducti |
August 19, 1997 |
| A process for etching of silicon oxide such as silicon dioxide, or oxynitride. The process includes etching a silicon oxide layer to expose an underlying electrically conductive titanium silicide layer and provide a contact opening extending through the silicon oxide layer to the ele |
| 5656122 |
Shadow clamp |
August 12, 1997 |
| A wafer clamping member for clamping a wafer in a plasma reaction chamber. The clamping member has a design which minimizes particle contamination of the wafer and allows more wafers to be processed before it is necessary to clean built-up deposits from the clamping member. The clamping |
| 5654796 |
Apparatus and method for mapping plasma characteristics |
August 5, 1997 |
| An apparatus and method for mapping characteristics of a volume of plasma in a plasma reaction chamber uses a photosensitive detector, a scanner that scans the volume, and a light directing element that directs light emissions from the volume scanned by the scanner to the photosensitive |
| 5647953 |
Plasma cleaning method for removing residues in a plasma process chamber |
July 15, 1997 |
| A method for cleaning and conditioning a plasma processing chamber wherein oxide residues have been previously formed on interior surfaces of the chamber. The method includes introducing a cleaning gas including a fluorine-based gas into the chamber followed by performing a plasma cl |
| 5644400 |
Method and apparatus for determining the center and orientation of a wafer-like object |
July 1, 1997 |
| A device and method for determining the center and orientation of a circular workpiece such as a semiconductor wafer. A beam of light from a light emitting diode is nearly collimated by a collimation lens before being reflected by a conical mirror. After reflecting from the conical m |
| 5626716 |
Plasma etching of semiconductors |
May 6, 1997 |
| A dry etching process for use in the manufacture of silicon integrated circuit devices uses a mixture of about eight parts neon to one part CHF.sub.3 (Freon 23) to form the etching plasma. The process etches doped oxides of silicon, such as BPSG and BPTEOS, in preference to undoped o |
| 5611888 |
Plasma etching of semiconductors |
March 18, 1997 |
| A dry etching process for use in the manufacture of silicon integrated circuit devices uses a mixture of about eight parts neon to one part CHF.sub.3 (Freon 23) to form the etching plasma. The process etches doped oxides of silicon, such as BPSG and BPTEOS, in preference to undoped o |
| 5609720 |
Thermal control of semiconductor wafer during reactive ion etching |
March 11, 1997 |
| Apparatus and method for obtaining improved control of the temperature of a semiconductor wafer over its area during plasma processing including reactive ion etching (RIE) and similar processing. RIE reactor apparatus is provided with a novel chuck arrangement both for holding and for |
| 5589737 |
Plasma processor for large workpieces |
December 31, 1996 |
| A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural s |
