| Patent Number |
Title Of Patent |
Date Issued |
| 6446355 |
Disk drying apparatus and method |
September 10, 2002 |
| Liquid is removed from disks by apparatus and methods for drying a disk that has been wet in a liquid bath. The disk and the bath are separated at a controlled rate to form a monolayer of liquid on the disk as the disk is positioned in a gas-filled volume. The separation may be by moving |
| 6444083 |
Corrosion resistant component of semiconductor processing equipment and method of manufacturing |
September 3, 2002 |
| A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon |
| 6443815 |
Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishi |
September 3, 2002 |
| A CMP system and methods make repeatable measurements of eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. The CMP system and method |
| 6441555 |
Plasma excitation coil |
August 27, 2002 |
| A spiral-like multi-turn coil excites a plasma for treating a workpiece in a vacuum plasma processor. In one embodiment two of the turns have a discontinuity. Each discontinuity has a capacitor connected across it. An RF source drives the coil via a matching network, an inductor connecte |
| 6439245 |
Method for transferring wafers from a conveyor system to a wafer processing station |
August 27, 2002 |
| A wheel for a conveyor system for transporting semiconductor wafers includes a first section for supporting a semiconductor wafer at a first level and a second section for supporting the wafer at a second level, with the first level being higher than the second level. In one embodime |
| 6435952 |
Apparatus and method for qualifying a chemical mechanical planarization process |
August 20, 2002 |
| A method and apparatus for qualifying a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes at least one qualifying member including at least one collimated hole structure, wherein the collimated hole structure forms mu |
| 6433484 |
Wafer area pressure control |
August 13, 2002 |
| A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confine |
| 6432832 |
Method of improving the profile angle between narrow and wide features |
August 13, 2002 |
| A method of performing a shallow trench isolation etch in a silicon layer of a layer stack is disclosed. The layer stack includes a silicon layer being disposed below a pad oxide layer, the pad oxide being disposed below a nitride layer, and the nitride layer being disposed below a photo |
| 6432831 |
Gas distribution apparatus for semiconductor processing |
August 13, 2002 |
| A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle asse |
| 6432729 |
Method for characterization of microelectronic feature quality |
August 13, 2002 |
| Disclosed is a method for characterizing the quality of microelectronic features using broadband white light. A highly collimated light source illuminates an area of a first wafer using broadband multi-spectral light. The angular distribution of the light scattered from the first wafer i |
| 6431959 |
System and method of defect optimization for chemical mechanical planarization of polysilicon |
August 13, 2002 |
| A system and method of reducing defects in chemical mechanical planarization of polysilicon is disclosed. The system includes first and second polishing stations each having a different hardness polishing pad and a different slurry. A cleaning station using a dilute SC1 chemistry is |
| 6430841 |
Apparatus for drying batches of wafers |
August 13, 2002 |
| Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the |
| 6428394 |
Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers |
August 6, 2002 |
| A method and apparatus are disclosed for chemically-mechanically polishing and planarizing semiconductors. An apparatus includes first and second rollers connected by a tension belt. A polishing member is releasably attached to the first and second rollers. A method includes clamping a |
| 6427566 |
Self-aligning cylindrical mandrel assembly and wafer preparation apparatus including the same |
August 6, 2002 |
| A self-aligning mandrel assembly is provided. The assembly includes a cylindrical inner core and a fulcrum disposed on an outer surface of the cylindrical inner core. A mandrel shell surrounds the cylindrical inner core. The mandrel shell has a wafer preparation material affixed to an |
| 6426304 |
Post etch photoresist strip with hydrogen for organosilicate glass low-.kappa. etch applications |
July 30, 2002 |
| Method for stripping photoresist from a semiconductor wafer including a layer of organosilicate dielectric. The method introduces a flow of hydrogen-containing gas to the wafer, and uses the hydrogen-containing gas to form a plasma in proximity with at least a portion of the wafer. The |
| 6425812 |
Polishing head for chemical mechanical polishing using linear planarization technology |
July 30, 2002 |
| A polishing head for performing chemical-mechanical polishing on a linear polisher has a flexible diaphragm coupling between a wafer carrier and a support housing which houses the wafer carrier. The diaphragm allows the carrier to move-substantially in the vertical direction within the |
| 6425158 |
Apparatus for processing a wafer |
July 30, 2002 |
| A method and apparatus for processing wafer edges is disclosed. Pressure applied to the wafer at one end of A brush/pad assembly is greater than at the opposite end of the brush/pad assembly. The increased pressure causes wafer rotation to slow or to reverse direction as compared to less |
| 6423200 |
Copper interconnect seed layer treatment methods and apparatuses for treating the same |
July 23, 2002 |
| A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then trea |
| 6422173 |
Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled |
July 23, 2002 |
| An inductively coupled plasma etching apparatus includes a chamber and a window for sealing a top opening of the chamber. The window has an inner surface that is exposed to an internal region of the chamber. A metal plate, which acts as a Faraday shield, is disposed above and spaced apar |
| 6419170 |
Adjustable nozzle assembly for semiconductor wafer backside rinsing |
July 16, 2002 |
| A nozzle assembly includes a connector tube having a first end and a second end. An outer surface of the connector tube is threaded. A first cap having an opening therethrough is threaded onto the first end of the connector tube. A second cap having an opening therethrough is threaded |
| 6416385 |
Method and apparatus for polishing semiconductor wafers |
July 9, 2002 |
| A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process pa |
| 6415804 |
Bowl for processing semiconductor wafers |
July 9, 2002 |
| A bowl includes a bottom wall having a generally circular shape. A sidewall extends upwardly from the bottom wall to define a cylindrical chamber. The sidewall has a projection that extends into the cylindrical chamber. The projection has a top surface that defines a step in the cylindri |
| 6415736 |
Gas distribution apparatus for semiconductor processing |
July 9, 2002 |
| A gas distribution system for semiconductor processing includes a contoured surface to achieve a desired gas distribution on the backside of a showerhead. The system can include one or more gas supplies opening into a plenum between a baffle plate and a temperature-controlled support mem |
| 6413877 |
Method of preventing damage to organo-silicate-glass materials during resist stripping |
July 2, 2002 |
| A method for making an etched organo-silicate-glass (OSG) layer over a substrate is provided. Generally an OSG layer is placed over the substrate. A patterned resist mask is placed over the OSG layer. The OSG layer is then etched, where the etching of the OSG layer forms at least one |
| 6411490 |
Integrated power modules for plasma processing systems |
June 25, 2002 |
| A power delivery system for providing energy to sustain a plasma in a plasma processing chamber configured for processing substrates. The power delivery system includes a metallic enclosure having an input port, a first output port, a second output port, and a third output port. There is |
| 6410451 |
Techniques for improving etching in a plasma processing chamber |
June 25, 2002 |
| Improved methods and apparatus for chemically assisted etch processing in a plasma processing system are disclosed. In accordance with one aspect of the invention, improved techniques suitable for performing an etch process in the plasma processing can be realized. The invention operates |
| 6410437 |
Method for etching dual damascene structures in organosilicate glass |
June 25, 2002 |
| Method for forming dual damascene etch structures in wafers, and semiconductor devices formed according to the method. The present invention utilizes the two-step etch process to form dual damascene structures in organosilicate dielectric layers. According to one embodiment of the pr |
| 6409051 |
Method and apparatus for dispensing a fluid media |
June 25, 2002 |
| An apparatus for dispensing media is provided. The apparatus has a rotating element having a cylindrical bore with a first end and a second end where the rotating element rotates the first end and the second end. The apparatus also includes a housing which has a fixed input port and a fi |
| 6408786 |
Semiconductor processing equipment having tiled ceramic liner |
June 25, 2002 |
| A plasma processing chamber including a ceramic liner in the form of ceramic tiles mounted on a resilient support member. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature |
| 6406363 |
Unsupported chemical mechanical polishing belt |
June 18, 2002 |
| A belt for polishing a workpiece such as a semiconductor wafer in a chemical mechanical polishing system includes a polymeric layer forming an endless loop and having a polishing surface on one side of the endless loop. The belt is manufactured by molding a polymeric material such as |
| 6406273 |
Pressure fluctuation dampening system |
June 18, 2002 |
| A pressure booster and method for amplifying a water pressure that is supplied by a water facility is provided. The pressure booster is configured to be connected between the water facility and one or more semiconductor substrate cleaning systems. The pressure booster includes a pump |
| 6405740 |
Accurate positioning of a wafer |
June 18, 2002 |
| A load station is used in a planarizing machine to perform several useful functions related to handling of a wafer. By centering the wafer with respect to a spindle carrier the load station interrupts the accumulation of positional errors. The load station never makes solid contact with |
| 6405399 |
Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing |
June 18, 2002 |
| A method and system are provided for cleaning a surface of a semiconductor wafer following a fabrication operation. The system includes a brush box, which has a fluid manifold and at least one nozzle. The nozzle is connected to the fluid manifold by a flexible conduit. The nozzle is |
| 6403322 |
Acoustic detection of dechucking and apparatus therefor |
June 11, 2002 |
| In a vacuum processing chamber, a monitoring arrangement for detecting when a substrate is sufficiently dechucked by an electrostatic clamp to allow safe movement thereof by a transfer mechanism such as a pin lifter. The monitoring arrangement includes an acoustic generator which outputs |
| 6402591 |
Planarization system for chemical-mechanical polishing |
June 11, 2002 |
| A method for performing and an apparatus to perform chemical mechanical polishing on a semiconductor wafer are disclosed. The apparatus includes a wafer holder, a polishing member, and a movable table. The movable table is in contact with and is supporting the polishing member. The polis |
| 6400458 |
Interferometric method for endpointing plasma etch processes |
June 4, 2002 |
| A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber. |
| 6394026 |
Low contamination high density plasma etch chambers and methods for making the same |
May 28, 2002 |
| A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. The apparatus can include a heater |
| 6391787 |
Stepped upper electrode for plasma processing uniformity |
May 21, 2002 |
| A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a densi |
| 6391786 |
Etching process for organic anti-reflective coating |
May 21, 2002 |
| A process for selectively removing an anti-reflective coating (ARC) in the manufacturing of semiconductor integrated circuits using an oxygen-free plasma of one or more fluorine containing compounds, chlorine and an optional inert carrier gas. The process renders effective etching of the |
| 6390448 |
Single shaft dual cradle vacuum slot valve |
May 21, 2002 |
| A single slot valve shaft is in a vacuum body between adjacent vacuum chambers, such as a process module and a transport module. Separate valves are provided on the single shaft actuator for each of two valve body slots, each body slot being closed or opened according to the position of |
| 6389677 |
Perimeter wafer lifting |
May 21, 2002 |
| The invention relates to an apparatus for lifting a substrate from a surface of a chuck subsequent to a processing step. The apparatus includes a perimeter pin for lifting the substrate from the surface of the chuck to a first position wherein the substrate is disposed on the perimeter p |
| 6388383 |
Method of an apparatus for obtaining neutral dissociated gas atoms |
May 14, 2002 |
| A downstream stripper includes a source of dissociated electrically neutral gas atoms derived by a plasma generator responsive to gas molecules including the atoms. The plasma generator includes a chamber responsive to RF electromagnetic fields derived by two coils on opposed sides of th |
| 6386962 |
Wafer carrier with groove for decoupling retainer ring from water |
May 14, 2002 |
| The present invention provides a wafer carrier for use with a chemical mechanical planarization apparatus. The wafer carrier includes a vacuum chuck and a retainer ring. The vacuum chuck is configured to hold and rotate a wafer for planarizing a surface topography of the wafer on a p |
| 6383931 |
Convertible hot edge ring to improve low-K dielectric etch |
May 7, 2002 |
| Two-step process to improve low-K dielectric etch uniformity, apparatus to perform the method, and semiconductor devices formed in accordance with the method. In a first etching step, an insulating hot edge ring is provided. When the photoresist clearing signal is observed using end-poin |
| 6377437 |
High temperature electrostatic chuck |
April 23, 2002 |
| A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from |
| 6376385 |
Method of manufacturing assembly for plasma reaction chamber and use thereof |
April 23, 2002 |
| An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly |
| 6375540 |
End-point detection system for chemical mechanical posing applications |
April 23, 2002 |
| Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad that is configured to move from a first point to a second point. A carrier is also included and is configured to hold a substrate to be polished over the polishing pad. The carrier is des |
| 6368452 |
Plasma treatment apparatus and method of semiconductor processing |
April 9, 2002 |
| In a plasma treatment apparatus having a plasma reaction chamber whose internal surface is covered with a plasma protection member, the protection member is constituted by a sintered silicon carbide substrate and a silicon carbide coating thereon. The resistivity of the silicon carbi |
| 6368416 |
Method for validating pre-process adjustments to a wafer cleaning system |
April 9, 2002 |
| A method for validating pre-process adjustments to a wafer cleaning system includes the operations of (a) making pre-process adjustments to a wafer cleaning system, (b) loading a substantially transparent wafer into the wafer cleaning system, and (c) observing the substantially transpare |
| 6368192 |
Wafer preparation apparatus including variable height wafer drive assembly |
April 9, 2002 |
| An apparatus for preparing a semiconductor wafer is provided. The apparatus includes a wafer drive assembly having a pair of wafer drive rollers for rotating a semiconductor wafer in a vertical orientation. The wafer drive assembly is configured such that the wafer drive rollers are cont |
