| Patent Number |
Title Of Patent |
Date Issued |
| RE39534 |
Method and apparatus to calibrate a semi-empirical process simulator |
March 27, 2007 |
| A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in |
| RE39145 |
Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a puls |
June 27, 2006 |
| An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used |
| RE38097 |
Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning |
April 29, 2003 |
| A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is inje |
| 7413992 |
Tungsten silicide etch process with reduced etch rate micro-loading |
August 19, 2008 |
| The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the subst |
| 7413988 |
Method and apparatus for detecting planarization of metal films prior to clearing |
August 19, 2008 |
| A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, |
| 7413673 |
Method for adjusting voltage on a powered Faraday shield |
August 19, 2008 |
| An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mi |
| 7413672 |
Controlling plasma processing using parameters derived through the use of a planar ion flux prob |
August 19, 2008 |
| Methods and apparatus for detecting and/or deriving the absolute values of and/or the relative changes in parameters such as the plasma potential and the ion flux using a Planar Ion Flux (PIF) probing arrangement are disclosed. The detected and/or derived values are then employed to |
| 7407597 |
Line end shortening reduction during etch |
August 5, 2008 |
| A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with at least one photoresist line having a pair of sidewalls ending at a line end. A coating is placed over the photoresist line comprising at least one cycle of de |
| 7406972 |
Substrate proximity processing structures |
August 5, 2008 |
| An apparatus for generating a fluid meniscus to process a substrate is provided. The apparatus includes a manifold head with a manifold surface having a plurality of conduits configured to generate a fluid meniscus on a substrate surface when positioned proximate the substrate. The manif |
| 7405521 |
Multiple frequency plasma processor method and apparatus |
July 29, 2008 |
| A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes |
| 7404123 |
Automated test and characterization data analysis methods and arrangement |
July 22, 2008 |
| A method for testing a component configured to be installed in a plasma processing system. The method includes providing an ATAC (Automated Test and Characterization) fixture, which includes a system control software package ( SCS) that is representative of production system control |
| 7403001 |
Methods and apparatus for measuring morphology of a conductive film on a substrate |
July 22, 2008 |
| A method of determining a mass variation of a conductive film on a substrate with an area, an edge zone, and a center zone, is disclosed. The method includes providing a measured conductive film mass of a conductive film on a substrate. The method also includes positioning a sensor n |
| 7402258 |
Methods of removing metal contaminants from a component for a plasma processing apparatus |
July 22, 2008 |
| Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid, citric acid, and |
| 7401275 |
Automated test and characterization web services |
July 15, 2008 |
| A testing arrangement for testing a plasma cluster tool having system control software (SCS) for controlling the plasma cluster tool during production. The testing arrangement includes a data manager module for obtaining, via a computer network, specification data pertaining to a com |
| 7399711 |
Method for controlling a recess etch process |
July 15, 2008 |
| A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net |
| 7397555 |
System, method and apparatus for in-situ substrate inspection |
July 8, 2008 |
| A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle |
| 7396769 |
Method for stripping photoresist from etched wafer |
July 8, 2008 |
| A method of forming a feature in a low-k (k<3.0) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A stripping g |
| 7396430 |
Apparatus and method for confined area planarization |
July 8, 2008 |
| A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte soluti |
| 7395611 |
System processing a substrate using dynamic liquid meniscus |
July 8, 2008 |
| A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surfac |
| 7393432 |
RF ground switch for plasma processing system |
July 1, 2008 |
| An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relati |
| 7393414 |
Methods and systems for processing a microelectronic topography |
July 1, 2008 |
| Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and |
| 7392815 |
Chamber for wafer cleaning and method for making the same |
July 1, 2008 |
| A wafer processing chamber "chamber" is provided. Broadly speaking, the chamber allows a fluid flow and a fluid pressure within the chamber to be controlled in a variable manner. More specifically, the chamber utilizes removable plates that can be configured to control the fluid flow and |
| 7390749 |
Self-aligned pitch reduction |
June 24, 2008 |
| A method for providing features in an etch layer with a memory region and a peripheral region is provided. A memory patterned mask is formed over a first sacrificial layer. A first set of sacrificial layer features is etched into the first sacrificial layer and a second sacrificial layer |
| 7389783 |
Proximity meniscus manifold |
June 24, 2008 |
| An apparatus for processing a substrate is provided which includes a first manifold module to generate a fluid meniscus on a substrate surface. The apparatus also includes a second manifold module to connect with the first manifold module and also to move the first manifold module into |
| 7387689 |
Methods for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in |
June 17, 2008 |
| Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close pr |
| 7385287 |
Preventing damage to low-k materials during resist stripping |
June 10, 2008 |
| A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is pre |
| 7383844 |
Meniscus, vacuum, IPA vapor, drying manifold |
June 10, 2008 |
| A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit |
| 7383843 |
Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
June 10, 2008 |
| Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a |
| 7383601 |
Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, a |
June 10, 2008 |
| In one embodiment, a substrate preparation system is provided. The system includes a brush, a front head, and a back head. The brush is configured to brush scrub a back surface of a substrate using a brush scrubbing chemistry. The front head is defined in close proximity to a front s |
| 7380982 |
Accurate temperature measurement for semiconductor applications |
June 3, 2008 |
| A temperature sensing component enables accurate in situ temperature measurement. The temperature sensing component is disposed within the process chamber. The temperature sensing component has a cavity, in which a transparent cover is disposed over an opening of the cavity. A material |
| 7376520 |
System and method for gas flow verification |
May 20, 2008 |
| A gas flow rate verification apparatus is provided for shared use in a multiple tool semiconductor processing platform. The gas flow rate verification apparatus is defined to measure a pressure rate of rise and temperature within a test volume for determination of a corresponding gas |
| 7371332 |
Uniform etch system |
May 13, 2008 |
| Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone s |
| 7368017 |
Method and apparatus for semiconductor wafer planarization |
May 6, 2008 |
| Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer ("wafer"). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas |
| 7367345 |
Apparatus and method for providing a confined liquid for immersion lithography |
May 6, 2008 |
| A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate. |
| 7364623 |
Confinement ring drive |
April 29, 2008 |
| A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have |
| 7363727 |
Method for utilizing a meniscus in substrate processing |
April 29, 2008 |
| A method for processing a substrate is provided. The method includes applying an active agent to an active region of a surface of the substrate. Then, the method includes generating a fluid meniscus on the surface of the substrate with a proximity head, where the fluid meniscus is su |
| 7361607 |
Method for multi-layer resist plasma etch |
April 22, 2008 |
| A method for etching a multi-layer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the multi-layer resist into the etch chamber. SO.sub.2 gas flows into the etch cha |
| 7358186 |
Method and apparatus for material deposition in semiconductor fabrication |
April 15, 2008 |
| Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer ("wafer"). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating |
| 7357115 |
Wafer clamping apparatus and method for operating the same |
April 15, 2008 |
| A wafer clamping apparatus is provided to secure a wafer within a chamber during wafer processing. The wafer clamping apparatus creates a pressure differential between a top surface and a bottom surface of the wafer. The pressure differential serves to pull the wafer toward a wafer suppo |
| 7356580 |
Plug and play sensor integration for a process module |
April 8, 2008 |
| A process chamber with a computer system that controls the process chamber is connected to one or more sensors, which are used to monitor the process in the process chamber. The sensors are connected to the computer system in a client/server relationship, in a way that allows the sensors |
| 7353560 |
Proximity brush unit apparatus and method |
April 8, 2008 |
| An apparatus is provided for producing a wet region and corresponding dry region on a wafer. A proximity brush unit delivers fluids with a rotatable brush to produce the wet region on the wafer. As the proximity brush unit moves in a selected scan method across the wafer, a plurality |
| 7353379 |
Methods for configuring a plasma cluster tool |
April 1, 2008 |
| A method for configuring a plasma cluster tool is disclosed. The method includes generating a key file from option specifications, the key file encapsulating configuration restrictions specifically imposed on the plasma cluster tool. The method also includes generating at least one s |
| 7351664 |
Methods for minimizing mask undercuts and notches for plasma processing system |
April 1, 2008 |
| A method for etching silicon layer of a substrate, which is deposited on a bottom electrode in a plasma processing chamber. The method includes performing a main etch step until at least 70 percent of silicon layer is etched. The method further includes an overetch step, which includes a |
| 7350316 |
Meniscus proximity system for cleaning semiconductor substrate surfaces |
April 1, 2008 |
| A system and apparatus for cleaning a substrate is provided. The system includes a first head configured as a bar shape that extends approximately a diameter of the substrate. The first head is configured for placement on a first side of the substrate. A second head is also provided, |
| 7350315 |
Edge wheel dry manifold |
April 1, 2008 |
| A apparatus for drying a substrate includes a vacuum manifold positioned adjacent to an edge wheel. The edge wheel includes an edge wheel groove for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum |
| 7347915 |
Plasma in-situ treatment of chemically amplified resist |
March 25, 2008 |
| A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing hi |
| 7341953 |
Mask profile control for controlling feature profile |
March 11, 2008 |
| A method for etching features into a dielectric layer over a substrate and existent below a polymeric hard mask is provided. The substrate is placed in a plasma processing chamber. Mask features are etched into the polymeric hard mask and necks are formed inadvertently. A plasma trea |
| 7341673 |
Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation |
March 11, 2008 |
| A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequenc |
| 7334477 |
Apparatus and methods for the detection of an arc in a plasma processing system |
February 26, 2008 |
| In a plasma processing system, a method for detecting an arc event on a substrate in a plasma chamber having a chuck is disclosed. The method includes positioning a substrate on the chuck. The method also includes providing a vibration-sensing arrangement in the plasma chamber, the v |
| 7329321 |
Enhanced wafer cleaning method |
February 12, 2008 |
| A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an |
