| Patent Number |
Title Of Patent |
Date Issued |
| 7464600 |
Combined temperature and pressure transducer incorporating connector keyway alignment and an ali |
December 16, 2008 |
| A transducer sensor is positioned within a hollow of the body of a housing. The housing has an extending alignment pin, which pin coacts with a corresponding slot or aperture in the wall of a vessel whose pressure or temperature is to be monitored. The transducer body is associated w |
| 7462977 |
High temperature pressure transducer having a shaped ceramic face |
December 9, 2008 |
| A high temperature pressure transducer includes an extended tubular member having an opening from a front to a back surface. The tubular member is preferably fabricated from a metal. At the front end of the tubular member is a ceramic sensor face or tip which basically is a ceramic disk |
| 7448254 |
Method and apparatus for measuring knocking in internal combustion engines |
November 11, 2008 |
| A method and apparatus for measuring knocking in internal combustion engines employs a high temperature transducer, which transducer is mounted within a cylinder. The output of the transducer is solely related to pressure. The output signal from the transducer is directed to the inpu |
| 7444879 |
Displacement transducer |
November 4, 2008 |
| A displacement transducer includes a load cell structure having a thick outer peripheral area, a thick inner central area and two symmetrical thin beams. The two beams are disposed along a common diameter of the structure and joins the outer peripheral area and the inner central area. |
| 7440645 |
Micromachined optical pressure sensor |
October 21, 2008 |
| A pressure sensor including: a deflectable diaphragm including a substantially central boss and channel; and, an optical waveguide having first and second arms, wherein the first arm is substantially aligned with an edge of the boss and the second arm is substantially aligned with an |
| 7439159 |
Fusion bonding process and structure for fabricating silicon-on-insulator (SOI) semiconductor de |
October 21, 2008 |
| A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor |
| 7436037 |
Moisture resistant pressure sensors |
October 14, 2008 |
| A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact t |
| 7432795 |
Pressure sensor header having an integrated isolation diaphragm |
October 7, 2008 |
| A pressure sensor header for a pressure transducer includes a header shell having a sensor cavity formed therein, a sensor element disposed in the sensor cavity, a fluid medium disposed in the sensor cavity, an isolation diaphragm closing the sensor cavity, and a joining arrangement disp |
| 7409866 |
Signal transmission system |
August 12, 2008 |
| A single wire interface for a transducer transmits the transducer output as a frequency modulated signal over one single wire during one interval. During a second interval a reference signal is transmitted as a frequency modulated signal. Both the transducer output and the reference sign |
| 7369032 |
Method of joining a pressure sensor header with an associated transducer element |
May 6, 2008 |
| A pressure transducer assembly including: a pressure sensor header; a transducer assembly member; and a joining arrangement disposed at an interface of the header and the transducer assembly member, for joining the header with the transducer assembly member, the joining arrangement i |
| 7363820 |
Ultra high temperature hermetically protected wirebonded piezoresistive transducer |
April 29, 2008 |
| An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active |
| 7358581 |
Quantum dot based pressure switch |
April 15, 2008 |
| A semiconductor heterostructure based pressure switch comprising: first and second small bandgap material regions separated by a larger bandgap material region; a third small bandgap material region within the region of larger bandgap material, the third material region and larger bandga |
| 7347098 |
Apparatus for providing an output proportional to pressure divided by temperature (P/T) |
March 25, 2008 |
| A circuit produces an output that is proportional to the molar density of gas in a chamber. The circuit employs an operational amplifier which measures the temperature using a RTD or other element that changes resistance with temperature. The RTD is placed such that it produces a dec |
| 7343808 |
Line pressure compensated differential pressure transducer assembly |
March 18, 2008 |
| A pressure transducer apparatus including: first and second pluralities of piezoresistors each coupled in Wheatstone bridge configurations, wherein the bridges are coupled together to provide a first output being indicative of a differential pressure; and, a third plurality of piezor |
| 7331241 |
Low cost pressure sensor for measuring oxygen pressure |
February 19, 2008 |
| A low cost sensor assembly for measuring oxygen pressures contains a transistor header. The transistor header has terminal pins extending therefrom. The transistor header co-acts with a first circuit insulator board. The first circuit board has deposited thereon four hand mirror shap |
| 7312096 |
Nanotube semiconductor structures with varying electrical properties |
December 25, 2007 |
| There is disclosed a nanotube sensor which essentially employs a straight or twisted nanotube deposited on a supporting surface, such as silicon, silicon dioxide and some other semiconductor or metal material. The nanotube is basically a graphite device which is now subjected to stress |
| 7307325 |
High temperature interconnects for high temperature transducers |
December 11, 2007 |
| A silicon wafer is fabricated utilizing two or more semiconductor wafers. The wafers are processed using conventional wafer processing techniques and the wafer contains a plurality of output terminals which essentially are platinum titanium metallization or high temperature contacts. A g |
| 7284444 |
Hermetically sealed displacement sensor apparatus |
October 23, 2007 |
| A hermetically sealed displacement sensor has strain gauges placed on thin flexible triangular shaped beams of a load beam cell. The strain gauges are enclosed in a hermetically sealed cavity which cavity is sealed by means of a cover plate placed over the load beam cell. The thin beams |
| 7284440 |
Line pressure compensated differential pressure transducer assembly |
October 23, 2007 |
| A pressure transducer apparatus including: first and second pluralities of piezoresistors each coupled in Wheatstone bridge configurations, wherein the bridges are coupled together to provide a first output being indicative of a differential pressure; and, a third plurality of piezor |
| 7283922 |
Transducer employing wireless transmissions for sending and receiving signals |
October 16, 2007 |
| A transducer is implemented to operate with transmitted frequency signals. These transmitted signals provide a bias potential to the transducer and enable the transducer to transmit a transducer output signal to a remote location. The transducer has an antenna for receiving transmitted |
| 7260127 |
Dual layer color-center patterned light source |
August 21, 2007 |
| A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color cente |
| 7258018 |
High accuracy, high temperature, redundant media protected differential transducers |
August 21, 2007 |
| A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spa |
| 7231828 |
High temperature pressure sensing system |
June 19, 2007 |
| A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of |
| 7212096 |
Pressure sensor header having an integrated isolation diaphragm |
May 1, 2007 |
| A pressure sensor header for a pressure transducer includes a header shell having a sensor cavity formed therein, a sensor element disposed in the sensor cavity, a fluid medium disposed in the sensor cavity, an isolation diaphragm closing the sensor cavity, and a joining arrangement disp |
| 7201067 |
System and method for determining flow characteristics |
April 10, 2007 |
| A fluid flow probe including: first, second and third pressure sensors; a first port for communicating a first pressure to the first pressure sensor; a second port for communicating a second pressure to the second pressure sensor, the second port being substantially oppositely disposed |
| 7189378 |
Miniature reaction chamber template structure for fabrication of nanoscale molecular systems and |
March 13, 2007 |
| A unique, micro-miniature reaction chamber template structure is disclosed for the fabrication of nanoscale molecular systems and devices. The structure is composed of multiple layers of silicon (either doped or intrinsic), Pyrex and various metals. The silicon may or may not be tota |
| 7188528 |
Low pass filter semiconductor structures for use in transducers for measuring low dynamic pressu |
March 13, 2007 |
| A semiconductor filter is provided to operate in conjunction with a differential pressure transducer. The filter receives a high and very low frequency static pressure attendant with a high frequency low dynamic pressure at one end, the filter operates to filter said high frequency d |
| 7186131 |
Vibration isolated transducer connector |
March 6, 2007 |
| A transducer including a transducer body, a sensor associated with the transducer body, an electrical connector assembly fastened to an end of the transducer body, and a vibration damper system disposed between the end of the transducer body and the electrical connector assembly. The |
| 7183620 |
Moisture resistant differential pressure sensors |
February 27, 2007 |
| A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact t |
| 7178403 |
Transducer responsive to pressure, vibration/acceleration and temperature and methods of fabrica |
February 20, 2007 |
| A pressure sensing device produces an output proportional to applied pressure irrespective of vibration/acceleration of the device, which device also provides an output proportional only to vibration/acceleration of the device irrespective of the pressure. |
| 7159401 |
System for detecting and compensating for aerodynamic instabilities in turbo-jet engines |
January 9, 2007 |
| The present invention relates to a system for detecting aerodynamic instabilities in a jet turbine engine having a pressure transducer mounted in the engine. The pressure transducer, welded to a circuit in signal communication with a controller, is adapted to send measured pressure r |
| 7155980 |
Resonating transducer |
January 2, 2007 |
| A resonating pressure transducer operable to measure an applied pressure by measuring changes in a resonant frequency is disclosed. The pressure transducer comprises a plurality of diaphragms formed in a wafer of semi-conducting material between two layers, wherein each of the diaphr |
| 7124639 |
Ultra high temperature hermetically protected wirebonded piezoresistive transducer |
October 24, 2006 |
| An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active |
| 7107853 |
Pressure transducer for measuring low dynamic pressures in the presence of high static pressures |
September 19, 2006 |
| A sensor is described, which basically consists of a leadless high sensitivity differential transducer chip which responds to both static and dynamic pressure. Located on the transducer are two sensors. One sensor has a thicker diaphragm and responds to both static and dynamic pressu |
| 7086299 |
Multi-load beam apparatus to prevent improper operation due to off-axis loads |
August 8, 2006 |
| A multi-load beam transducer includes a fixed member, a movable member, and a plurality of load beams positioned between the members, each beam separated by a given distance normal from each other and positioned about a longitudinal axis between the members. The plurality of load beams a |
| 7073389 |
Shunt calibration for electronic pressure switches |
July 11, 2006 |
| An electronic switch of the type uses a piezoresistive Wheatstone bridge configuration to sense pressure. The output of the Wheatstone bridge is applied to an electronic control circuit which contains a comparator. The comparator monitors the output of the bridge and if the output voltag |
| 7034700 |
Solid state electronic pressure switch |
April 25, 2006 |
| An electronic single pole double throw switch has two states. In each state, one of the lamps is on and the other lamp is off. In the electronic switch, the voltage, which is at the output terminal of the lamp that is off is utilized to drive a low voltage regulator which operates el |
| 7000484 |
Load beam apparatus operative to prevent improper operation due to off axis loads |
February 21, 2006 |
| A beam transducer employs a linear bearing which surrounds the active element of the transducer which is the beam. One end of the bearing is welded to the inactive end of the load beam. The other end of the bearing is not welded, allowing the active end of the beam to move freely. The |
| 6941816 |
Transducer with integral switch for wireless electronics |
September 13, 2005 |
| There is disclosed a transducer with an integral switch for wireless electronics. Essentially, the transducer contains a housing which includes a sensor device. The sensor device may be a piezoresistive Wheatstone bridge arranged in a conventional manner. The output of the bridge is |
| 6935184 |
Pressure transducer capable of detecting internal leakage of external media |
August 30, 2005 |
| A pressure transducer capable of detecting leakage of media into the pressure transducer. The pressure transducer comprises a spacer having first and second ends. A first header assembly containing a first pressure sensor for measuring a pressure of the media, is sealingly disposed at th |
| 6900108 |
High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbi |
May 31, 2005 |
| Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of crystalline doped silicon carbide. The device is a 3C--SiC/SiO.sub.2 /SiC structure. This structure can be employed to fabricate h |
| 6895822 |
Apparatus and method for interconnecting leads in a high temperature pressure transducer |
May 24, 2005 |
| A novel method for interconnecting leads in a high pressure transducer without the use of solder employs a ceramic disc containing a number of through holes. Each hole has a tube inserted therein, which tubes are connected to the disc by brazing or a high temperature attachment. Each |
| 6891711 |
Ultra-miniature, high temperature, capacitive inductive pressure transducer |
May 10, 2005 |
| An ultra miniature high temperature capacitive inductive pressure transducer is fabricated by MEMS techniques. The transducer consists of two separated pieces of silicon which form the plates of the capacitor, one of which plate is micromachined in such a way to allow a controlled de |
| 6877379 |
Doubly compensated pressure transducer |
April 12, 2005 |
| The present invention relates to a compensated pressure transducer having a pressure transducer connected to a coarse temperature adjustment compensator and to a fine temperature adjustment compensator. The coarse temperature adjustment compensator includes an analog circuit and the fine |
| 6871487 |
System for detecting and compensating for aerodynamic instabilities in turbo-jet engines |
March 29, 2005 |
| The present invention relates to a system for detecting aerodynamic instabilities in a jet turbine engine having a pressure transducer mounted in the engine. The pressure transducer, welded to a circuit in signal communication with a controller, is adapted to send measured pressure r |
| 6861276 |
Method for fabricating a single chip multiple range pressure transducer device |
March 1, 2005 |
| A single chip multiple range pressure transducer device including a wafer having a plurality of simultaneously formed thinned regions. The thinned regions are separated by a fixed portion, and each have a same minimum thickness. The thinned regions have at least one different planar |
| 6848307 |
Dual beam frequency-output accelerometer |
February 1, 2005 |
| There is described an accelerometer which is fabricated utilizing a beam diaphragm sensor employing dielectrically isolated resonant beams. Each resonant beam is subject to an acceleration. One beam is an acceleration sensing beam and contains a mass which is coupled to the deflecting |
| 6727524 |
P-n junction structure |
April 27, 2004 |
| There is disclosed a p-n junction diode structure whose electrical characteristics can be affected by the application of pressure or other mechanical stresses that will control sensitivity. The p-n junction consists of two different semiconductor materials, one being of p-type and th |
| 6700473 |
Pressure transducer employing on-chip resistor compensation |
March 2, 2004 |
| A dielectrically isolated temperature compensated pressure transducer including: a wafer including a deflectable diaphragm formed therein, the diaphragm being capable of deflecting in response to an applied pressure, and the diaphragm defining an active region surrounded by an inactive |
| 6691581 |
Pressure transducer fabricated from beta silicon carbide |
February 17, 2004 |
| A method for fabricating a dielectrically isolated silicon carbide high temperature pressure transducer which is capable of operating at temperatures above 600.degree. C. The method comprises applying a layer of beta silicon carbide of a first conductivity, on a first substrate of si |
