| Patent Number |
Title Of Patent |
Date Issued |
| D559250 |
Viewing device |
January 8, 2008 |
|
| D479545 |
Digital camera |
September 9, 2003 |
|
| D464971 |
Liquid crystal display holder |
October 29, 2002 |
|
| D454848 |
Wireless phone with microdisplay |
March 26, 2002 |
|
| D446783 |
Wireless phone with microdisplay |
August 21, 2001 |
|
| D427587 |
Portable communication display device |
July 4, 2000 |
|
| D420671 |
Portable communication display device |
February 15, 2000 |
|
| D412919 |
Monocular viewer |
August 17, 1999 |
|
| D394649 |
Head mounted display device |
May 26, 1998 |
|
| D388426 |
Head-mounted display device |
December 30, 1997 |
|
| D381346 |
Head-mountable matrix display |
July 22, 1997 |
|
| D371549 |
Head-mounted display device |
July 9, 1996 |
|
| D368730 |
Compact light valve projector |
April 9, 1996 |
|
| D355649 |
Base mounted rear projection monitor |
February 21, 1995 |
|
| D355648 |
Rear projection monitor |
February 21, 1995 |
|
| D355206 |
Liquid crystal display housing unit adapted for use with a slide projector |
February 7, 1995 |
|
| D353390 |
Liquid crystal display housing unit for a slide projector |
December 13, 1994 |
|
| D352304 |
Liquid crystal display housing unit adapted for use with a slide projector |
November 8, 1994 |
|
| D349896 |
Rear projection monitor |
August 23, 1994 |
|
| D347840 |
Rear projection monitor |
June 14, 1994 |
|
| 7372447 |
Microdisplay for portable communication systems |
May 13, 2008 |
| The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a hand held communication display device. The system can employ an LED illumination system |
| 7365811 |
Display housing with a display alignment device |
April 29, 2008 |
| Alignment of an imaging area of a display with a user's eye provides optimum image quality for the user. Typically, a display is formed of a display panel encased within a carrier. The carrier is used to mechanically align the display panel within a device housing. However, the displ |
| 7345327 |
Bipolar transistor |
March 18, 2008 |
| A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of ga |
| 7321354 |
Microdisplay for portable communication systems |
January 22, 2008 |
| The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a hand held communication display device. The system can employ an LED illumination system |
| 7310072 |
Portable communication display device |
December 18, 2007 |
| A head-mounted display system displays information via a matrix display element mounted within a housing that is positioned relative to at least eye of a user. The display is connected to a video or information source such that the user can view information or images shown on the display |
| 7310071 |
Instrument panel with active display |
December 18, 2007 |
| An instrument panel including at least one instrument indicator positioned in the panel. At least one active display is positioned in the panel and is capable of displaying images from data provided to the display. |
| 7253852 |
Polarizer removal in a microdisplay system |
August 7, 2007 |
| A display module includes a display, a first polarizer and a second polarizer. The polarizers can be located at a distance from the image plane of the display to remove the visibility of optical defects located within the polarizer or between the polarizer and display. The display mo |
| 7242383 |
Portable microdisplay system |
July 10, 2007 |
| An active matrix color crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix display is located in a portable microdisplay system that has a display computer that generates images to be displayed on the liq |
| 7186624 |
Bipolar transistor with lattice matched base layer |
March 6, 2007 |
| A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to |
| 7138993 |
LCD with integrated switches for DC restore |
November 21, 2006 |
| An AC-coupled display driver circuit includes one or more DC-restore switches that are integrated within a liquid crystal display. A liquid crystal display system includes a coupling capacitor coupled at one end to a system input video signal, the coupling capacitor providing a displ |
| 7122841 |
Bonding pad for gallium nitride-based light-emitting devices |
October 17, 2006 |
| A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-sid |
| 7115466 |
Bipolar transistor with graded base layer |
October 3, 2006 |
| A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of ga |
| 7075501 |
Head mounted display system |
July 11, 2006 |
| A head mounted display system including a high resolution active matrix display which reduces center of gravity offset in a compact design. The active matrix display can be either a liquid crystal display or a light emitting display. |
| 7057668 |
Color/mono switched display |
June 6, 2006 |
| A color sequential display operative in one of two alternate modes. The first mode is a color sequential mode in which primary color images are displayed in successive frames while respective background light sources are simultaneously flashed on the display. The second mode is a mon |
| 7002180 |
Bonding pad for gallium nitride-based light-emitting device |
February 21, 2006 |
| A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used t |
| 6999057 |
Timing of fields of video |
February 14, 2006 |
| An apparatus and method to delay a field of video by one row in a two field frame to reduce DC build-up or stick caused by textual image. |
| 6967697 |
Display housing with a display alignment device |
November 22, 2005 |
| Alignment of an imaging area of a display with a user's eye provides optimum image quality for the user. Typically, a display is formed of a display panel encased within a carrier. The carrier is used to mechanically align the display panel within a device housing. However, the displ |
| 6955985 |
Domain epitaxy for thin film growth |
October 18, 2005 |
| A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial l |
| 6919935 |
Method of forming an active matrix display |
July 19, 2005 |
| The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferr |
| 6911079 |
Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
June 28, 2005 |
| The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes a |
| 6909419 |
Portable microdisplay system |
June 21, 2005 |
| An active matrix color crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix display is located in a portable microdisplay system that has a display computer that generates images to be displayed on the liquid |
| 6881983 |
Efficient light emitting diodes and lasers |
April 19, 2005 |
| An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides. |
| 6847060 |
Bipolar transistor with graded base layer |
January 25, 2005 |
| A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of ga |
| 6847052 |
Light-emitting diode device geometry |
January 25, 2005 |
| A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed regi |
| 6800879 |
Method of preparing indium phosphide heterojunction bipolar transistors |
October 5, 2004 |
| InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the |
| 6750480 |
Bipolar transistor with lattice matched base layer |
June 15, 2004 |
| A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to |
| 6734091 |
Electrode for p-type gallium nitride-based semiconductors |
May 11, 2004 |
| An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor |
| 6683584 |
Camera display system |
January 27, 2004 |
| A camera display system displays information via a matrix display element mounted within a housing that is positioned relative to at least eye of a user. The display is connected to a video or image sensor such that the user can view information or images shown on the display. The displa |
| 6677936 |
Color display system for a camera |
January 13, 2004 |
| The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a viewfinder in a electronic image record system such as a digital camera or video camera. |
| 6636185 |
Head-mounted display system |
October 21, 2003 |
| A head mounted display system including a high resolution active matrix display which reduces center of gravity offset in a compact design. The active matrix display can be either a liquid crystal display or a light emitting display. |
