| |
 |
Komatsu Electronic Metal Co., Ltd. Patents |
|
Assignee: Komatsu Electronic Metal Co., Ltd.
Address: Kanagawa, JP
No. of patents: 4
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6056931 |
Silicon wafer for hydrogen heat treatment and method for manufacturing the same |
May 2, 2000 |
| In growing silicon single crystals by the CZ method, the cooling rate in the 1150-1080.degree. C. temperature zone (defect-forming temperature range) where the grown-in defects are formed is set at more than 2.0.degree. C./min to manufacture single crystals having an as-grown LSTD de |
| 5963821 |
Method of making semiconductor wafers |
October 5, 1999 |
| This invention provides a method for efficiently making semiconductor wafers having uniform thickness where the thickness of the back side does not influence the front side and where the front side of the wafer is capable of being distinguished from the back side. A semiconductor ingot |
| 5868836 |
Semiconductor single-crystal lift device |
February 9, 1999 |
| A semiconductor single crystal lift device which comprises a crucible for melting materials for forming semiconductor single crystals and a radiation screen disposed at an upper portion of the crucible and formed of a reversed-cone-shaped adiabatic tube surrounding a lift zone, the a |
| 5866468 |
Method for fabricating an SOI substrate |
February 2, 1999 |
| In the wafer-bonding method of fabricating an SOI (silicon-on-insulator) substrate, even if there exists thickness variation in the silicon layer, devices fabricated onto the silicon layer, in accordance with the present invention, have a decreased threshold voltage variation. According |
|
|
|
