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Kanto Kagaku Kabushiki Kaisha Patents
Assignee:
Kanto Kagaku Kabushiki Kaisha
Address:
Tokyo, JP
No. of patents:
69
Patents:


1 2










Patent Number Title Of Patent Date Issued
8580136 Etching solution composition for metal thin film consisting primarily of copper November 12, 2013
The problem of the present invention is to provide an etching solution composition that can etch with high accuracy a metal-laminated film pattern comprising thin films of copper and a copper alloy, can form an excellent pattern shape, and has practically excellent and stable charact
8263791 Method and reagent for protein analysis September 11, 2012
A convenient, rapid, and highly sensitive protein detection method is provided. According to the present invention, an easily water-soluble compound of formula I is provided: ##STR00001## [wherein, R.sub.1 and R.sub.2 are same or different, each of which is an aryl or heteroaryl gr
8232420 Asymmetric catalyst and process for preparing optically active alcohols using the same July 31, 2012
The present invention provides an organic metal compound, a ligand, an asymmetric catalyst, and a process for preparing optically-active alcohols using the asymmetric catalyst. The organic metal compound of the present invention is expressed by the following general formula (1): ##ST
8212037 Process for production of optically active quinuclidinols July 3, 2012
A novel ruthenium complex which is a highly efficient catalyst useful for the production of optically active 3-quinuclidinols, and a process for production of optically active 3-quinuclidinols using the ruthenium complex as a catalyst, where the optically active 3-quinuclidinols are
8123976 Alkaline aqueous solution composition used for washing or etching substrates February 28, 2012
As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process for removing the adsorbed metal impurities is requir
8105998 Liquid composition for removing photoresist residue and polymer residue January 31, 2012
Provided is a liquid composition for, at a low temperature in a short time, removing a photoresist residue and a polymer residue generated in a semiconductor circuit element manufacturing process A residue removing method using such composition is also provided. The composition removes
7943516 Manufacturing method for semiconductor device May 17, 2011
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the
7816313 Photoresist residue remover composition and semiconductor circuit element production process emp October 19, 2010
A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a
7816312 Composition for photoresist stripping solution and process of photoresist stripping October 19, 2010
The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring
7687630 Method for producing optically active quinuclidinols having one or more substituted groups at th March 30, 2010
The invention provides a method for producing optically active 3-quinuclidinols having one or more substituted groups at the 2-position; wherein 3-quinuclidinones having one or more substituted groups at the 2-position are reacted with compounds providing hydrogen in the presence of
7619125 Hydrogenation promoter, hydrogenation catalyst, and process for producing alkene compound November 17, 2009
A hydrogenation promoter of the present invention is produced by reacting an alkyne compound or an alkene compound, a palladium compound represented by a general formula Pd(II)X.sub.jL.sub.k (where L represents a monodentate ligand or a polydendate ligand other than a phosphorus-cont
7601667 Sulfonate catalyst and method of producing alcohol compound using the same October 13, 2009
A sulfonate catalyst represented by the formula below and a ketone compound are placed in a solvent, and the ketone compound is hydrogenated by mixing in the presence of hydrogen to produce an optically active alcohol. ##STR00001##
7591911 Plated film of gold-cobalt amorphous alloy, electroplating bath, and method for electroplating September 22, 2009
A gold-cobalt based amorphous alloy plated film consisting of a homogeneous amorphous phase not having microcrystals is formed by electroplating conducted by use of an electroplating bath containing a gold cyanide salt in a concentration of 0.01 to 0.1 mol/dm.sup.3 in terms of gold,
7563754 Composition for removing photoresist residue and polymer residue July 21, 2009
A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic
7517999 Imidazolium compound April 14, 2009
A novel imidazolium compound represented by the following general formula (I), ##STR00001## which has an allyl group incorporated in the 3-position of the imidazolium ring. It needs no complicated operations for dissolution and has excellent handleability and a high ionic conductivi
7507350 Etching liquid composition March 24, 2009
The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from
7368064 Cleaning solution and manufacturing method for semiconductor device May 6, 2008
A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the
7351354 Tungsten metal removing solution and method for removing tungsten metal by use thereof April 1, 2008
A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained.
7268250 Process for producing optically active compound September 11, 2007
A highly efficient process is provided for producing an optically active compound having high optical purity by an asymmetric reaction using as a catalyst a transition metal complex having an optically active nitrogen-containing compound as an asymmetric ligand.
7138362 Washing liquid composition for semiconductor substrate November 21, 2006
There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washin
7087562 Post-CMP washing liquid composition August 8, 2006
A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a
7084097 Cleaning solution for substrates of electronic materials August 1, 2006
The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials.The cleaning solution for cleaning substrates of electronic materials comprises an org
7073518 Cleaning solution and cleaning method for mask used in vacuum vapor deposition step in productio July 11, 2006
A cleaning solution for a mask used in a vacuum vapor deposition step in the production of a low molecular weight organic EL device is provided, the cleaning solution including one type or two or more types of aprotic polar solvent. There is also provided a cleaning method for a mask use
7022878 Organic borate compounds and the nonaqueous electrolytes and lithium secondary batteries using t April 4, 2006
Organic borates having the formula: ##STR00001## The borates are highly soluble in solvent of low dielectric constant. Also disclosed are nonaqueous electrolytes made from these organic borates; lithium secondary batteries with improved high-temperature storage characteristics; and
7022169 Electroless gold plating solution April 4, 2006
An electroless gold plating solution is provided that contains no cyanide compound as a source of gold and that contains a decomposition inhibitor represented by general formula (1), provided that, in a case in which the solution contains a gold complex of sulfite and the decomposition
7011697 Electroless gold plating solution March 14, 2006
An electroless gold plating solution is provided that includes a cyanide compound and ascorbic acid or a derivative thereof, the electroless gold plating solution containing one or more than one deposition accelerator selected from the group consisting of a copper compound, a thallium
6914039 Etching liquid composition July 5, 2005
The invention provides etching liquid compositions for transparent conducting films wherein foaming is suppressed and residues do not occur after etching. The etching liquid compositions include an etching liquid for transparent conducting films and one or more compounds selected from
6877518 Chemical solution treatment apparatus for semiconductor substrate April 12, 2005
A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment
6864044 Photoresist residue removing liquid composition March 8, 2005
The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulat
6855191 Electroless gold plating solution February 15, 2005
An electroless gold plating solution is provided in which an amount of gold deposited by a displacement reaction is at least 15 .mu.g/cm.sup.2, and the electroless gold plating solution includes a reducing agent that is oxidized by gold, and a reducing agent that is of the same type as o
6824928 Organic borate compounds and the nonaqueous electrolytes and lithium secondary batteries using t November 30, 2004
The object of the present invention is to supply organic borates highly soluble even in a solvent of a low dielectric constant; nonaqueous electrolytes made from these organic borates and excellent in characteristics; lithium secondary batteries with improved high-temperature storage
6790973 Ruthenium complexes and process for preparing alcoholic compounds using these September 14, 2004
The invention provides novel ruthenium complexes having an optically active diphosphine compound, which has asymmetry on carbon and is easy to synthesize, as the ligand and a process for preparing optically active alcoholic compounds using said complexes as the catalysts, wherein said
6787293 Photoresist residue remover composition September 7, 2004
A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that incl
6730644 Cleaning solution for substrates of electronic materials May 4, 2004
The present invention relates to a cleaning solution capable of removing efficiently at the same time particles and metallic impurities from a substrate surface without corroding metallic materials.The cleaning solution for cleaning substrates of electronic materials comprises an organic
6713033 Process for producing hydrophilic ODS packing material made of silica gel March 30, 2004
A process for the production of a highly chemically stable hydrophilic ODS packing material made of silica gel for liquid chromatography that causes hardly any peak tailing. ODS groups are chemically bonded to a silica gel having a specific surface area of 200 to 300 m.sup.2 /g, which is
6706533 Method for detecting a concentration of a solution March 16, 2004
A concentration detection method and a concentration detection apparatus, and an agent diluting preparation apparatus capable of accurately estimating the concentration of a solution without the need of strict temperature control, and of estimating the concentration of the solution i
6485779 Solution for forming ferroelectric film and method for forming ferroelectric film November 26, 2002
Acetylacetone and an aqueous nitric acid are included in a solution in which organic metal compounds of metals constituting a ferroelectric in an organic solvent thereby forming a ferroelectric film formation solution. The solution is applied to a substrate, followed by drying and baking
6428974 Microplate for drug susceptibility testing containing a drug, a color reagent, and color suppres August 6, 2002
A reagent for a drug susceptibility testing which is simple and highly reproducible is provided. A microplate for a drug susceptibility testing wherein a drug and a color reagent containing a tetrazolium salt, 1-methoxy-5-methylphenazinium methylsulfate (1-methoxy PMS), potassium fer
6388146 Polymerizable compound, polymerizable resin composition, cured polymer and liquid crystal displa May 14, 2002
The polymerizable compound of this invention is represented by general formula (I): ##STR1##where R is H, R', R'O, R'COO, or R'OCO, R' is a linear or branched alkyl group or alkenyl group having 1 to about 15 carbon atoms, A.sub.1 and A.sub.2 are independently a cyclohexane ring or a
6231677 Photoresist stripping liquid composition May 15, 2001
A photoresist stripping liquid composition effective for removing resist residues after dry etching and resist ashing in the manufacturing processes of semiconductor devices, which does not corrode the different metallic materials, and wherein are comprised, as active component, one or
6165420 Production unit for producing high purity hydrochloric acid and using the same December 26, 2000
Disclosed is an apparatus for supplying hydrogen chloride gas from a hydrogen chloride gas generator to an absorbing reactor through a gas supply pipe, and a method for producing hydrochloric acid by allowing the gas absorbed in water in an absorbing reactor. The apparatus obtains a
6098848 Method and apparatus for connecting a fluid reservoir with pipelines August 8, 2000
The object of the present invention is to simplify the process of connecting a reservoir for charging and discharging 2 or more fluids with a pipeline for conveying said fluid and to assist the automation of this process.In the present invention, a reservoir, having, at its end face, 2 o
6086665 Solution for forming ferroelectric film and method for forming ferroelectric film July 11, 2000
Acetylacetone and an aqueous nitric acid are included in a solution in which organic metal compounds of metals constituting a ferroelectric in an organic solvent thereby forming a ferroelectric film formation solution. The solution is applied to a substrate, followed by drying and baking
6080709 Cleaning solution for cleaning substrates to which a metallic wiring has been applied June 27, 2000
The present invention relates to a cleaning solution for cleaning substrates, to which a metallic wiring has been applied, being capable of easily removing the metallic impurities of the substrate surface without corroding the metal, not putting a strain on the environment, and not c
6007739 Liquid crystal compound, liquid crystal composition, and liquid crystal display device using the December 28, 1999
A liquid crystal compound of the present invention is represented by the following general Formula I: ##STR1## wherein R.sub.1 and R.sub.2 are independently a linear or branched alkyl group or alkoxy group having 1 to 14 carbon atoms, provided that at least one of R.sub.1 and R.s
5892075 Process for synthesizing metallocene compounds April 6, 1999
The object of the invention resides in the development of an improved process for synthesizing metallocene compounds useful as olefin polymerization catalysts.A new process for synthesizing metallocene compounds of formulae (IV) and (IV') comprises a reaction of formula (I) with formula
5859276 Organotransition metal compounds January 12, 1999
New metallocene compounds (II) and their synthetic intermediates (I) used for olefin polymerization catalysts represented by the general formulas (I) and (II) ##STR1## (wherein X can be identical or different and is each independently of one another a halogen atom, M.sup.1 is a g
5750213 Polymerizable compound and liquid crystal display device using the same May 12, 1998
A polymerizable compound represented by Formula (I): ##STR1## where X is a hydrogen atom or a methyl group; l and m are independently an integer of 0 to 14; Y is a single bond, --COO--, --OCO--, or --O--; n and p are independently an integer of 0 to 18; q and s are independently an
5728463 Stationary phase material for chromatography March 17, 1998
A material for use as a stationary phase for chromatography comprising a solid material the surface of which is coated with pyrophosphate and/or metaphosphate.
5709911 Polymerizable compound and liquid crystal display device using the same January 20, 1998
A polymerizable compound represented by Formula (I): ##STR1## where X is a hydrogen atom or a methyl group; Y and Z are independently a hydrogen atom or a fluorine atom; l is an integer of 0 to 14; m and n are independently an integer of 0 or 1; R is represented by Formula (II),
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