| Patent Number |
Title Of Patent |
Date Issued |
| RE37740 |
Method and apparatus for optical inspection of substrates |
June 11, 2002 |
| Substrate inspection apparatus and methods, and illumination apparatus. The inspection apparatus and method includes memory for storing the desired features of the surface of the substrate, focussed illuminator for substantially uniformly illuminating a region of the surface of the s |
| 7623229 |
Systems and methods for inspecting wafers |
November 24, 2009 |
| Systems and methods for inspecting wafers are provided. One system includes a detection subsystem configured to separately and simultaneously detect light scattered from different portions of a single spot obliquely, or normally, illuminated on a wafer and to separately generate outp |
| 7623227 |
System and method for inspecting a workpiece surface using polarization of scattered light |
November 24, 2009 |
| A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. |
| 7616308 |
Optical measurement apparatus and method |
November 10, 2009 |
| An optical measurement apparatus and method a method for performing modulation spectroscopy measurement of a sample comprising: delivering an incident probe beam to a sample at a known spot; modulating reflectance of the probe beam with a pump beam which periodically forms a pump beam |
| 7616307 |
Optical measurement apparatus and method |
November 10, 2009 |
| An optical modulation spectroscopy system comprises a probe beam source and components for directing the probe beam at a sample. It also may comprise a modulated pump beam source and components for directing a modulated pump beam at the sample. A dispersive system may disperse the re |
| 7615747 |
Sampling feedback system |
November 10, 2009 |
| An electron microscope includes an electron beam source, which produces an electron beam. Scan deflectors direct the electron beam in a pattern across a sample, which thereby emits electrons. The pattern includes line portions and retrace portions. A main detector receives the electrons |
| 7605915 |
System and method to create haze standard |
October 20, 2009 |
| In one embodiment, a system to create a haze standard on a surface of an object, comprises a radiation targeting assembly that targets a radiation beam onto the surface of the object, a drive assembly to impart relative motion between the radiation targeting assembly and the surface of t |
| 7605913 |
System and method for inspecting a workpiece surface by analyzing scattered light in a front qua |
October 20, 2009 |
| A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. |
| 7602958 |
Mirror node process verification |
October 13, 2009 |
| An inspection image analysis system. At least one image processing computer is configured to receive and analyze at least one portion of an image. At least one test computer is configured to receive at least one common portion of the image also received by the at least one image proc |
| 7602509 |
Method for selecting optical configuration for high-precision scatterometric measurement |
October 13, 2009 |
| The present application discloses a method for selecting an optical configuration for a high-precision scatterometric measurement. A geometric parameterization of a grating is determined, wherein the grating comprises a periodic structure. The geometric parameterization is used to ge |
| 7602491 |
Optical gain approach for enhancement of overlay and alignment systems performance |
October 13, 2009 |
| A resultant image of a grating target may be obtained by dividing an image of the target into first and second portions and optically modifying the first and/or second portion such that a final image formed from their combination is characterized by a Moire pattern. The resultant image m |
| 7595891 |
Measurement of the top surface of an object with/without transparent thin films in white light i |
September 29, 2009 |
| White light interferometry is used to obtain the height information of the topmost surface of an object having a transparent thin film on it. N frames of data are acquired from an interferometer while a white light fringe pattern is scanning through a field of view. The modulation fringe |
| 7592616 |
Detecting micropipes |
September 22, 2009 |
| An automated, non-invasive method for classifying, detecting, and counting micropipes contained within silicon wafers, and generally any assortment of transparent wafers. Classifying, detecting, and counting micropipes takes place through the use of a data processing algorithm that i |
| 7583386 |
Method and apparatus for optically analyzing a surface |
September 1, 2009 |
| In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a radial motor to move an optical head in a radial direction to detect defects at locations displaced from the edge of the wafer, and a rotational motor to rotate |
| 7580767 |
Methods of and apparatuses for maintenance, diagnosis, and optimization of processes |
August 25, 2009 |
| One aspect of the present invention is a method of monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. Another aspect of the present invention is a system configured for monitoring processes, optimizing |
| 7570354 |
Image intensification for low light inspection |
August 4, 2009 |
| An optical inspection system for inspecting a substrate. A beam source produces a light beam and directs it toward a surface of the substrate, thereby producing a reflected light beam that is received by an intensifier module. A photocathode receives the reflected light beam at a fir |
| 7567351 |
High resolution monitoring of CD variations |
July 28, 2009 |
| An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These mea |
| 7560703 |
Integrated segmented scintillation detector |
July 14, 2009 |
| A signal conduction channel having a first element that receives electrons at a first end from a vacuum environment, produces photons as the electrons are received, and propagates the photons along a length of the first element to a distal second end, and a second element that receives |
| 7557910 |
System and method for controlling a beam source in a workpiece surface inspection system |
July 7, 2009 |
| A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. |
| 7555409 |
Daisy chained topology |
June 30, 2009 |
| An inspection system. The inspection system has a sensor for generating data. A first network is coupled to the sensor and communicates the data. An array of nodes is coupled to the first network, and processes the data to produce reports. Each node has an interface coupled to the first |
| 7554655 |
High throughput brightfield/darkfield water inspection system using advanced optical techniques |
June 30, 2009 |
| The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a d |
| 7554654 |
Surface characteristic analysis |
June 30, 2009 |
| In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a scatterometer to identify at least one defect region on the surface and a surface profile height measuring tool to measure one or more characteristics of the |
| 7550744 |
Chamberless substrate handling |
June 23, 2009 |
| without substantially touching the surface, having annular rings forming annular orifices, one of the rings forming an air bearing portion and having passages through which a flow of a gas can be established in a first direction, where the flow of the gas is sufficient to create a cu |
| 7550743 |
Chamberless substrate handling |
June 23, 2009 |
| A particle beam system having a beam source for generating a particle beam and a vacuum air bearing. The beam source is mounted to a first side of the vacuum air bearing, with an active side of the vacuum air bearing disposed on an opposing second side of the vacuum air bearing. The acti |
| 7548308 |
Illumination energy management in surface inspection |
June 16, 2009 |
| An apparatus and associated method for reducing thermal damage on a specimen during an inspection which includes a radiation source for supplying a beam of radiation, and a means for adjusting a first energy level of the beam of radiation to a second energy level as the beam of radia |
| 7546573 |
Semiconductor device pattern generation |
June 9, 2009 |
| In one embodiment, a computer system a processor and a memory module comprising logic instructions stored on a computer readable medium which. When executed, the logic instructions configure a processor to create a reticle pattern for use in a lithography process, apply an orthogonal |
| 7541826 |
Compliant pad wafer chuck |
June 2, 2009 |
| A platform is designed to support thin flat substrates, such as semiconductor wafers, during observation of characteristics of the substrates. The platform includes a rigid base having a top surface. A resilient pad is supported on the base and the pad has a top surface, at least a p |
| 7539584 |
Volume based extended defect sizing system |
May 26, 2009 |
| A system and method for sizing semiconductor wafer defects combines contiguous light intensity values over a defect area of the wafer to provide a defect sizing metric. The light intensity values resulting from a light source applied to the wafer are summed and the summation is compa |
| 7538887 |
Temporal interferometric signal modeling with constant phase shift in white light interferometry |
May 26, 2009 |
| A method for determining the surface topography of an object with various surface properties in white light interferometry first generates a set of interferograms, produced by a phase shift driving mechanism supplied with known inputs, obtained from a single reflective surface at the loc |
| 7532318 |
Wafer edge inspection |
May 12, 2009 |
| In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a radial motor to move an optical head in a radial direction to detect defects at locations displaced from the edge of the wafer, and a rotational motor to rotate |
| 7531984 |
Sensor apparatus power transfer, communication and maintenance methods and apparatus |
May 12, 2009 |
| Presented are methods, systems, and apparatuses for managing and maintaining an electronic device such as a sensor apparatus. |
| 7525304 |
Measurement of effective capacitance |
April 28, 2009 |
| A method for determining an effective capacitance of a dielectric material, by forming first and second asymmetrical electrodes entirely within a field of the dielectric material, where the first electrode, the second electrode, and the field of the dielectric material are co-planar, |
| 7522275 |
High throughput darkfield/brightfield wafer inspection system using advanced optical techniques |
April 21, 2009 |
| The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a d |
| 7518789 |
Broad band deep ultraviolet/vacuum ultraviolet catadioptric imaging system |
April 14, 2009 |
| A design for inspecting specimens, such as photomasks, for unwanted particles and features such as pattern defects is provided. The system provides no central obscuration, an external pupil for aperturing and Fourier filtering, and relatively relaxed manufacturing tolerances, and is |
| 7505143 |
Dynamic reference plane compensation |
March 17, 2009 |
| In one embodiment, a method of dynamic reference plane compensation, comprises impinging radiation from a first radiation source onto a surface of an object; generating an uncompensated measurement signal from radiation reflected from a first location on the surface and a second loca |
| 7505125 |
System and method for signal processing for a workpiece surface inspection system |
March 17, 2009 |
| A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. |
| 7502104 |
Probe beam profile modulated optical reflectance system and methods |
March 10, 2009 |
| The present invention provides a probe beam profile--modulated optical reflectivity metrology system having a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample in a manner so that the rays within the probe beam create a spread of |
| 7497134 |
Process condition measuring device and method for measuring shear force on a surface of a substr |
March 3, 2009 |
| At least one shear force sensor is used to measure the shear force on a member, when the member is in contact with and pressed against a polishing or planarization surface and a lateral force is applied between the two surfaces. Preferably the structure and the surface of the structu |
| 7495217 |
Film thickness and composition measurement via auger electron spectroscopy and electron probe mi |
February 24, 2009 |
| In some embodiments, techniques are described for combining an X-ray detector (e.g., for providing EPMA) and an electron detector (e.g., for providing AES) to provide a tool for determining film compositions and thicknesses on a specimen, such as a semiconductor structure or wafer. In |
| 7489399 |
Spectroscopic multi angle ellipsometry |
February 10, 2009 |
| An ellipsometer having a light source for generating a probe beam along a probe beam path. A polarizing beam splitter passes the probe beam along the probe beam path, at least in part, as the probe beam passes through the beam splitter in a first direction, and diverts the probe beam alo |
| 7482576 |
Apparatuses for and methods of monitoring optical radiation parameters for substrate processing |
January 27, 2009 |
| One or more problems related to processing workpieces using processes that involve optical radiation are presented along with solutions to one or more of the problems. One embodiment of the invention comprises a sensor apparatus for collecting optical radiation data representing one or m |
| 7480047 |
Time-domain computation of scattering spectra for use in spectroscopic metrology |
January 20, 2009 |
| In an embodiment, a method of time-domain simulation for simulating scattering spectra is described. The method may provide for computing spatial derivatives including computing spectral derivatives in some portion of the domain and finite difference derivatives in some other portion |
| 7478019 |
Multiple tool and structure analysis |
January 13, 2009 |
| Measurement data sets for optical metrology systems can be processed in parallel using Multiple Tool and Structure Analysis (MTSA). In an MTSA procedure, at least one parameter that is common to the data sets can be coupled as a global parameter. Setting this parameter as global allows a |
| 7477371 |
Process and assembly for non-destructive surface inspections |
January 13, 2009 |
| A light beam is directed towards a surface along a direction normal to the surface. The surface is caused to move so that the beam scans the surface along a spiral path. An ellipsoidal mirror is placed with its axis along the surface normal to collect light scattered by the surface and a |
| 7465913 |
System and method for sensing using adjustable modulation transfer function (MTF) with voltage v |
December 16, 2008 |
| A variable modulated transfer function (MTF) design employing a variable gate voltage source for use in inspecting specimens is disclosed. The design applies a variable gate voltage to each pixel of a sensor, wherein applying the variable gate voltage to each pixel adjusts the MTF of the |
| 7457034 |
High NA system for multiple mode imaging |
November 25, 2008 |
| A system for multiple mode imaging is disclosed. The catadioptric system has an NA greater than 0.65, and preferably greater than 0.9, highly corrected for low and high order monochromatic aberrations. The system employs unique illumination entrances and optics to collect reflected, |
| 7456964 |
Detector configurations for optical metrology |
November 25, 2008 |
| An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. |
| 7453571 |
Dimensional calibration standards |
November 18, 2008 |
| A calibration standard, for calibrating lateral or angular dimensional measurement systems, is provided. The standard may include a first substrate spaced from a second substrate. The standard may be cross-sectioned in a direction substantially perpendicular or substantially non-perp |
| 7453562 |
Ellipsometry measurement and analysis |
November 18, 2008 |
| A method of performing a measurement of properties of a sample, by directing a first beam of light at the sample, where a combination of the wavelength, energy, and length of time is sufficient to cause temporary damage to the sample. The first beam is reflected from the sample. The |
| 7446416 |
Barrier material formation in integrated circuit structures |
November 4, 2008 |
| A method of forming an electrically conductive via. A first electrically conductive layer is formed, and a second layer is formed on the first layer. The second layer has desired barrier layer properties. A third non electrically conductive layer is formed on the second layer. A via hole |
