| Patent Number |
Title Of Patent |
Date Issued |
| 6509067 |
Method and apparatus for the deposition of metal nanoclusters and films on a substrate |
January 21, 2003 |
| A method for forming metallic nanoclusters upon a substrate includes moving the substrate through a deposition chamber at a predetermined uniform velocity and depositing metallic precursor compounds onto the substrate. The metallic precursor compounds are subsequently bombarded with an |
| 6165554 |
Method for hydrogen atom assisted jet vapor deposition for parylene N and other polymeric thin f |
December 26, 2000 |
| A method is presented for the vapor deposition of a material film upon a substrate. The method comprises the use of a Jet Vapor Deposition process with a vaporized polymer gas flowing at supersonic velocity. The vaporized polymer gas consists of a carrier gas and a vaporized polymer, suc |
| 6148764 |
Multiple micro inlet silane injection system for the jet vapor deposition of silicon nitride wit |
November 21, 2000 |
| Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interferin |
| 5759634 |
Jet vapor deposition of nanocluster embedded thin films |
June 2, 1998 |
| An "arrested nucleation" jet vapor deposition system uses sonic jets and moving substrates to produce nanocluster-embedded films in which semiconductor or metal nanoclusters are trapped in a film of hard, inorganic host materials. CdSe films fabricated at high rate and room temperatu |
| 5725672 |
Apparatus for the high speed, low pressure gas jet deposition of conducting and dielectric thin |
March 10, 1998 |
| Described is a method for depositing from the vapor phase a chemical species into the form of a thin solid film material which overlays a substrate material. The deposition process consists of three steps: (1) synthesis of depositing species, (2) transport of said species from site o |
| 5650197 |
Jet vapor deposition of organic molecule guest-inorganic host thin films |
July 22, 1997 |
| A host-guest jet vapor deposition system uses sonic jets and moving substrates to produce host-guest films in which complex organic molecules are trapped in hard, inorganic hosts. The system is capable of film fabrication at high rate and room temperature. Guest molecule concentratio |
| 5571332 |
Electron jet vapor deposition system |
November 5, 1996 |
| A gas jet film deposition system includes a source of thermionically emitted electrons which are accelerated through carrier gas and generate He ions by impact ionization. The resultant electron avalanching and multiplication generates an extremely dense plasma, and produces large el |
| 5356673 |
Evaporation system and method for gas jet deposition of thin film materials |
October 18, 1994 |
| A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors |
| 5356672 |
Method for microwave plasma assisted supersonic gas jet deposition of thin films |
October 18, 1994 |
| A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which |
| 5256205 |
Microwave plasma assisted supersonic gas jet deposition of thin film materials |
October 26, 1993 |
| An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. T |
