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Interuniversitair Microelektronica Centrum Patents
Assignee:
Interuniversitair Microelektronica Centrum
Address:
IMEC) VZW (Leuven, BE
No. of patents:
185
Patents:


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Patent Number Title Of Patent Date Issued
RE37512 Method of preparing solar cell front contacts January 15, 2002
Method of preparing on a solar cell the top contact pattern which consists of a set of parallel narrow finger lines and wide collector lines deposited essentially at right angles to the finger lines on the semiconductor substrate, characterized in that it comprises at least the follo
D590442 Multilingual block April 14, 2009
8020163 Heterogeneous multiprocessor network on chip devices, methods and operating systems for control September 13, 2011
Network on Chip (NoC) Devices, especially Heterogeneous Multiprocessor Network on Chip Devices are described, that optionally contain Reconfigurable Hardware Tiles, as well as Methods and Operating Systems (OS) for Control thereof. In accordance with an aspect of the present inventio
7831951 Task concurrency management design method November 9, 2010
A system and method of designing digital system. One aspect of the invention includes a method for designing an essentially digital system, wherein Pareto-based task concurrency optimization is performed. The method uses a system-level description of the functionality and timing of t
7671768 Digital-to-analogue converter system with increased performance March 2, 2010
The invention relates to an N-bit digital-to-analogue converter (DAC) system, comprising--a DAC unit comprising an N-bit master DAC and a slave DAC, yielding a master DAC unit output signal and a slave DAC unit output signal, respectively, said N-bit master DAC having an output step
7649722 Electrostatic discharge protected circuits January 19, 2010
A method for designing an ESD protected analog circuit is described. The method includes creating an analog circuit design comprising a plurality of interconnected functional components and circuit-level ESD protection components with predetermined electric properties for achieving a
7646138 Diamond enhanced thickness shear mode resonator January 12, 2010
A thickness shear mode (TSM) resonator is described, comprising a diamond layer. The diamond layer is preferably a high quality diamond layer with at least 90% sp.sup.3 bonding or diamond bonding. A method for manufacturing such a resonator is also described. The thickness shear mode
7643709 Slanted segmented coupler January 5, 2010
A slanted grating coupler for coupling a radiation beam between a waveguide lying substantially in a plane on a substrate and an optical element outside that plane is provided, whereby the slanted grating coupler has a good coupling efficiency for medium or low index contrast materia
7638922 Method for ultra-fast controlling of a magnetic cell and related devices December 29, 2009
The present invention relates to a device and corresponding method for ultrafast controlling of the magnetization of a magnetic element. A device (100) includes a surface acoustic wave generating means (102), a transport layer (104), which is typically functionally and partially stru
7626226 Method for improving erase saturation in non-volatile memory devices and devices obtained thereo December 1, 2009
Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the use of a complex symmetrical structure. In the example device, programming is accomplished
7589425 Method of manufacturing a semiconductor device having damascene structures with air gaps September 15, 2009
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises providing a substantially planar layer having a first metal layer, depositing a via level dielectric layer, patterning the via level dielect
7586393 Reconfigurable cavity resonator with movable micro-electromechanical elements as tuning elements September 8, 2009
One inventive aspect relates to a reconfigurable cavity resonator. The resonator comprises a cavity delimited by metallic walls. The resonator further comprises a coupling device for coupling an electromagnetic wave into the cavity. The resonator further comprises a tuning element for
7576385 Method for improving erase saturation in non-volatile memory devices and devices obtained thereo August 18, 2009
Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the use of a complex symmetrical structure. In the example device, programming is accomplished
7570180 Method for syntactically analyzing a bit stream using a schema and a method of generating a bit August 4, 2009
A method and apparatus for transforming a description of an encoded bit stream is described. The encoded bit stream comprises data packets and the description is written in a markup language such as BSDL. A group of one or more data packets is described in the description by an element,
7569882 Non-volatile multibit memory cell and method of manufacturing thereof August 4, 2009
One embodiment of the invention comprises a first semiconductor structure in electrical contact with a first contact region, a second semiconductor structure in electrical contact with a second contact region, the first semiconductor structure and the second semiconductor structure being
7560357 Method for creating narrow trenches in dielectric materials July 14, 2009
A method for producing narrow trenches in semiconductor devices. The narrow trenches are formed by chemically changing the properties of a first dielectric layer locally, such that the side walls of a patterned hole in the first dielectric layer is converted locally and becomes etcha
7557027 Method of producing microcystalline silicon germanium suitable for micromachining July 7, 2009
A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a silicon source and a
7552304 Cost-aware design-time/run-time memory management methods and apparatus June 23, 2009
Methods, apparatus and software products are described for design-time data-assignment techniques for hierarchical memories, e.g., multi-banked memories in an essentially digital system as well as methods, apparatus and software products for run-time memory management techniques of such
7547928 AlGaN/GaN high electron mobility transistor devices June 16, 2009
The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy, with higher performance (power), by covering the surface with a thin SiN layer on the
7538764 System and method to obtain surface structures of multi-dimensional objects, and to represent th May 26, 2009
Four related but independent aspects are described: (1) a method and a system to derive mesh surface descriptions (also called connectivity-wireframes) and material properties from objects represented as a scalar field (e.g. discrete multi-dimensional data), scalar functions (e.g. im
7528387 Methods and systems for characterising and optimising immersion lithographic processing May 5, 2009
A method is provided for characterizing an immersion lithography process of a device using an immersion liquid. In order to study pre-soak and post-soak effects on the image performance of an immersion lithography process, the method includes determining at least one image performance
7527698 Method and apparatus for removing a liquid from a surface of a substrate May 5, 2009
A method and apparatus for removing a first liquid from a surface of a substrate is provided. A second liquid is supplied to at least part of a surface of a substrate having a rotary movement. The rotary movement has a center of rotation and an edge of rotation. The second liquid is
7521408 Semiconductor cleaning solution April 21, 2009
The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula ( 1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical
7521369 Selective removal of rare earth based high-k materials in a semiconductor device April 21, 2009
A method is disclosed for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO.sub.3) over silicon or silicon dioxide. As an example Dy and Sc comprising high-k materials are used as a high-k material in gate stacks of a
7517765 Method for forming germanides and devices obtained thereof April 14, 2009
The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a substrate having topog
7511116 Method of preparing derivatives of polyarylene vinylene and method of preparing an electronic de March 31, 2009
A technique is described for the preparation of polymers according to a process in which the starting compound of formula (I) is polymerized in the presence of a base in an organic solvent. No end chain controlling agents are required during the polymerisation to obtain soluble precursor
7510959 Method of manufacturing a semiconductor device having damascene structures with air gaps March 31, 2009
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable layer, depositing a first barrier layer on top of the patterned disposable layer, deposi
7508718 Method for operating a non-volatile charge-trapping memory device and method for determining pro March 24, 2009
A method for determining programming/erase conditions and a method for operating a charge-trapping semiconductor device are disclosed. Programming and erase conditions are determined such that a first net charge distribution variation profile, upon going from programmed to erased sta
7504329 Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET March 17, 2009
Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting ni
7491635 Method for forming a fully silicided gate and devices obtained thereof February 17, 2009
A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source and/or a drain region. In particular, the method discloses the formation of an expansion volu
7468328 Method for producing patterned thin films December 23, 2008
The present invention relates to methods for producing a patterned thin film on a substrate. The method comprises the spatially and possibly also temporally modulation of nucleation modes of film growth during the growth of patterned thin films. The nucleation modes are modulated bet
7449920 Power-aware configurable driver circuits for lines terminated by a load November 11, 2008
The present invention provides a driver circuit for driving a line terminated by a load, wherein said driver circuit is configurable for design time selected energy/delay working points. The configuration capability is used, e.g. during run-time, for dynamically selecting a suitable
7446164 Method of preparing derivatives of polyarylene vinylene and method of preparing an electronic de November 4, 2008
A technique is described for the preparation of polymers according to a process in which the starting compound of formula (I) is polymerized in the presence of a base in an organic solvent. No end chain controlling agents are required during the polymerisation to obtain soluble precursor
7445390 Method and system for optically coupling components November 4, 2008
A method is described for providing a predetermined optical path in an optical module, the predetermined optical path being defined by predetermined optical characteristics for the optical module. a modifiable optical element is provided at a predetermined position in the optical mod
7442635 Method for producing a semiconductor device and resulting device October 28, 2008
The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiples source-g
7440085 Apparatus and methods for simultaneous surface acoustic wave and surface plasmon resonance measu October 21, 2008
The invention relates to a method and apparatus for obtaining and analysing physical properties of a substance. Optical data and acoustical data are obtained for the substance and the data are used to apply a model of the optical/acoustical properties of the substance such that there
7439117 Method for designing a micro electromechanical device with reduced self-actuation October 21, 2008
A method is described for designing a micro electromechanical device in which the risk of self-actuation of the device in use is reduced. The method includes locating a first conductor in a plane and locating a second conductor with its collapsible portion at a predetermined distance
7432233 Composition and method for treating a semiconductor substrate October 7, 2008
The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is stable and provokes less
7422019 Composition and method for treating a semiconductor substrate September 9, 2008
The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is stable and provokes less
7415902 Method for the quantification of hydrophilic properties of porous materials August 26, 2008
Methods for the quantification of hydrophilic properties of a porous material, as well as determining a depth of damage of a porous material are disclosed. An example method includes performing a first ellipsometric measurement on the porous material using a first adsorptive having a
7405914 Electrostatic discharge protection circuit July 29, 2008
An electrostatic discharge (ESD) protection circuit for the protection of an electronic circuit from an ESD event. The electronic circuit, in operation, is provided with a supply voltage and a reference voltage (typically electrical ground) via voltage terminals and/or power supply b
7400024 Formation of deep trench airgaps and related applications July 15, 2008
A method for forming deep trench or via airgaps in a semiconductor substrate is disclosed comprising the steps of patterning a hole in the substrate, partly fill said hole with a sacrificial material (e.g. poly-Si), depositing spacers on the sidewalls of the unfilled part of the hole
7399635 Impurity measuring method for Ge substrates July 15, 2008
The present invention provides an impurity measuring method comprising the steps of dropping a drop of a first solution on the surface of a substrate to be measured, moving the drop dropped on the surface of the substrate so that the drop is kept in contact with the surface and colle
7393768 Etching of structures with high topography July 1, 2008
The present invention relates to a method for the patterning of a stack of layers on a surface with high topography. A method of the present invention can be used for gate patterning for multiple Gate FETs (MuGFETs), for patterning of the control gate in non-volatile memory applicati
7390708 Patterning of doped poly-silicon gates June 24, 2008
A method is provided for the patterning of a stack comprising elements that do not form volatile compounds during conventional reactive ion etching. More specifically the element(s) are Lanthanide elements such as Ytterbium (Yb) and the patterning preferably relates to the dry etching
7388785 Method for extracting the distribution of charge stored in a semiconductor device June 17, 2008
A method is described for extracting the spatial distribution of charge stored in a charge-trapping layer of a semiconductor device. The method comprises the steps of performing a first charge-pumping measurement on a device under test using a variation of the upper level of the pulse an
7372346 Acoustic resonator May 13, 2008
A tuneable film bulk acoustic resonator (FBAR) device. The FBAR device includes a bottom electrode, a top electrode and a piezoelectric layer in between the bottom electrode and the top electrode. The piezoelectric layer has a first overlap with the bottom electrode, where the first
7368377 Method for selective deposition of a thin self-assembled monolayer May 6, 2008
A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assem
7338896 Formation of deep via airgaps for three dimensional wafer to wafer interconnect March 4, 2008
A method for forming deep via airgaps in a semiconductor substrate is disclosed comprising the steps of patterning a hole in the substrate, partly fill said hole with a sacrificial material (e.g. poly-Si), forming spacers on the sidewalls of the unfilled part of the hole (e.g. TEOS) to
7336931 Electrical device comprising analog frequency conversion circuitry and method for deriving chara February 26, 2008
An electrical device comprises analog conversion circuitry having an input and an output. The electrical device is essentially provided for converting a first input signal within a first frequency range applied to the input to a first output signal within a second frequency range dif
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