| Patent Number |
Title Of Patent |
Date Issued |
| 7612344 |
Radiation detector and method |
November 3, 2009 |
| A radiation detector and method. One embodiment provides a radiation detector including a semiconductor body with a first base zone of a first conduction type and with at least one second base zone arranged at least partly in the first base zone, extending in a vertical direction of the |
| 7605580 |
Integrated hybrid current sensor |
October 20, 2009 |
| A sensor arrangement for measuring current is disclosed. The sensor arrangement includes a substrate, at least one Hall element integrated in or arranged on the substrate, a first coil that is spaced apart from a surface of the substrate in a vertical direction, a second coil that is |
| 7602153 |
Concept for providing a regulated, limited generator excitation current to a generator |
October 13, 2009 |
| A device for providing a regulated, limited generator excitation current to a generator to acquire a regulated output voltage of the generator, the device including a combiner for weighted combining a first system deviation on the basis of a setpoint voltage and of the regulated output |
| 7601596 |
Semiconductor device with trench transistors and method for manufacturing such a device |
October 13, 2009 |
| According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches and on the first side. A part of the first side and the trenches is masked using a first |
| 7598143 |
Method for producing an integrated circuit with a trench transistor structure |
October 6, 2009 |
| A method for producing an integrated circuit including a semiconductor and in one embodiment a trench transistor structure, is disclosed. A first diffusion method is carried out. A second diffusion method is carried out, by which dopant atoms of a second conduction type are introduced vi |
| 7587193 |
Signal transmission arrangement having a transformer and a receiver circuit |
September 8, 2009 |
| A signal transmission arrangement includes a transformer and a receiver circuit. The transformer has at least one primary winding and at least one secondary winding, each having first and second connections. The receiver circuit is connected to the secondary winding, and has an input |
| 7582922 |
Semiconductor device |
September 1, 2009 |
| A semiconductor device is disclosed. One embodiment provides a top surface. A first lateral semiconductor region is arranged adjacent to the top surface and includes a transistor structure. The transistor structure includes a drain zone of a first conductivity type. A second lateral |
| 7582531 |
Method for producing a buried semiconductor layer |
September 1, 2009 |
| A method for producing a region of increased doping in an n-doped semiconductor layer which is buried in a semiconductor body of a vertical power transistor and which is arranged between a p-doped body region facing the front side contact of the power transistor and an n-doped substr |
| 7569903 |
Component arrangement having a transistor and an open-load detector |
August 4, 2009 |
| One embodiment of the invention relates to a component arrangement including a load and an open-load detector. The load transistor has a first transistor region arranged in a semiconductor body, a second transistor region arranged in the semiconductor body and a third transistor regi |
| 7560833 |
Drive circuit having a transformer for a semiconductor switching element |
July 14, 2009 |
| A drive circuit for a semiconductor switching element includes a transformer, first and second driver circuits, and a rectifier element. The drive circuit produces a drive signal based on an input signal. The transformer has a primary winding and a secondary winding, and is integrate |
| 7557386 |
Reverse conducting IGBT with vertical carrier lifetime adjustment |
July 7, 2009 |
| A reverse conducting insulated gate bipolar transistor (IGBT) includes a semiconductor substrate having a front side and a back side and a first conductivity region between the front and back sides. The first conductivity region includes a reduced lifetime zone, a first lifetime zone |
| 7554157 |
Lateral SOI component having a reduced on resistance |
June 30, 2009 |
| An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, |
| 7554137 |
Power semiconductor component with charge compensation structure and method for the fabrication |
June 30, 2009 |
| A semiconductor component (1) with charge compensation structure (3) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift zones of a first conduction type, which provide a current path between the electrodes (6, 7) in the drift |
| 7541660 |
Power semiconductor device |
June 2, 2009 |
| A The semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivit |
| 7541260 |
Trench diffusion isolation in semiconductor devices |
June 2, 2009 |
| A semiconductor structure is formed comprising a plurality of columns doped with alternating dopants. The columns are separated by trenches, and the dopant is diffused in the doped columns. The trenches are filled with semiconductor material. Other embodiments may be described and cl |
| 7538412 |
Semiconductor device with a field stop zone |
May 26, 2009 |
| A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a seco |
| 7535055 |
Trench transistor |
May 19, 2009 |
| A trench transistor is disclosed. One embodiment has an active zone enclosed by an edge trench, wherein an edge electrode at gate potential is embedded into the edge trench, and the active zone has a mesa structure at least partly adjoining the edge trench. That region of the mesa st |
| 7491629 |
Method for producing an n-doped field stop zone in a semiconductor body and semiconductor compon |
February 17, 2009 |
| A method for producing an n-doped field stop zone in a semiconductor body. The method includes carrying out a diffusion process for the indiffusion of sulfur, hydrogen or selenium proceeding from one side into the semiconductor body in order to produce a first n-doped semiconductor z |
| 7465987 |
Field electrode trench transistor structure with voltage divider |
December 16, 2008 |
| A trench transistor structure having a field electrode arrangement formed in trenches is disclosed. In one embodiment, the field electrode arrangement is conductively connected to subvoltage taps of a voltage divider for the purpose of stabilizing the potentials on a longer time scal |
| 7459365 |
Method for fabricating a semiconductor component |
December 2, 2008 |
| The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a |
| 7419883 |
Method for fabricating a semiconductor structure having selective dopant regions |
September 2, 2008 |
| A method for fabricating a semiconductor structure having selective dopant regions in a semiconductor substrate having trenches formed therein I disclosed. In one embodiment, by a dopant source of an auxiliary structure, parts of the semiconductor structure which lie within the trenc |
| 7375395 |
Vertical field-effect transistor in source-down structure |
May 20, 2008 |
| The invention relates to a vertical field-effect transistor in source-down structure, in which the active zones (10, 7, 11) are introduced from trenches (5, 8, 9) into a semiconductor body (1), a source electrode (18) being connected via the filling (6) of a body trench (5) to a highly |
| 7372103 |
MOS field plate trench transistor device |
May 13, 2008 |
| A MOS field plate trench transistor device is disclosed. In one embodiment, in order to obtain a lowest possible on resistance, in the case of a MOS field plate trench transistor device having a body contact hole, it is proposed to form the avalanche breakdown region preferably in an |
| 7342440 |
Current regulator having a transistor and a measuring resistor |
March 11, 2008 |
| The invention relates to a current regulator having the following features: a first semiconductor body (1; 1') having a first and second terminal contact (11, 12), a transistor (T) having a control terminal and a load path, which is integrated in the semiconductor body (1; 1') and |
| 7274225 |
Method for driving a semiconductor switching element in a half-bridge and circuit arrangement ha |
September 25, 2007 |
| A method and related apparatus drives a first semiconductor switching element, the load path of which is connected in series with a load path of a second semiconductor switching element in a half-bridge circuit and which is driven in the on state or in the off state according to swit |
| 7136292 |
Power supply and method for regulating supply voltage |
November 14, 2006 |
| In a preferred embodiment, there is provided a switched mode power supply operable in start-up mode, normal mode and standby mode. The power supply may comprise a transformer having a primary winding on a primary side and a secondary winding on a secondary side, the primary winding being |
