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Huga Optotech Inc. Patents
Assignee:
Huga Optotech Inc.
Address:
Taichung County, TW
No. of patents:
31
Patents:












Patent Number Title Of Patent Date Issued
8258531 Semiconductor devices September 4, 2012
A semiconductor device includes a substrate and an epitaxy layer positioned on the substrate. In one embodiment of the present disclosure, the substrate includes an upper surface and a plurality of bumps positioned on the upper surface, and each of the bumps includes a top plane subs
8247837 Light-emitting diode with high lighting efficiency August 21, 2012
The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconduc
8247822 Semiconductor light-emitting device August 21, 2012
A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on
8237184 Light-emitting semiconductor device August 7, 2012
A semiconductor light-emitting device includes a conductive substrate, a light-emitting structure layer, a metallic reflective layer, a transparent conductive layer, a first patterned dielectric layer, and a second patterned dielectric layer. The light-emitting structure layer, the t
8232567 Light emitting device with pillar structure having hollow structure July 31, 2012
A light emitting device, includes a substrate; a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a transparent conductive layer on the second semiconductor layer; and a plurality of pillar
8174039 Light-emitting diode device with high luminescent efficiency May 8, 2012
The invention discloses a light-emitting diode including a substrate, a main stack structure, a plurality of secondary pillars, a transparent insulating material, a transparent conducting layer, a first electrode and a second electrode. The pillars are formed on the substrate and sur
8143081 Method for dicing a diced optoelectronic semiconductor wafer March 27, 2012
A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an
8129736 Light-emitting diode March 6, 2012
The invention discloses a light-emitting diode which includes a substrate on which a first conducting-type semiconductor layer, an illuminating layer and a second conducting-type semiconductor layer are formed sequentially, a transparent insulating material, a first transparent condu
8124989 Light optoelectronic device and forming method thereof February 28, 2012
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes a first nitrogen-containing compound layer, an II/V group compound layer is provided o
8044422 Semiconductor light emitting devices with a substrate having a plurality of bumps October 25, 2011
A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type sem
8013322 Light-emitting diode device with a double-layer contact structure and a fabrication method there September 6, 2011
The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer being patterned to increase ohmic contact area of the double-layered contact layer structur
8008679 Light emitting diode and method August 30, 2011
A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second sub
7999273 Light emitting device having pillar structure with roughness surface and the forming method ther August 16, 2011
A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active
7973326 Semiconductor structure combination for epitaxy of semiconductor optoelectronic device July 5, 2011
The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an u
7960749 Light-emitting device structure and semiconductor wafer structure with the same June 14, 2011
A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer,
7956374 Semiconductor light-emitting device June 7, 2011
The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer
7956373 Semiconductor light-emitting device with high light-extraction efficiency June 7, 2011
The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is
7947991 High efficiency lighting device May 24, 2011
A high efficiency lighting device comprising a light emitting diode structure, an eutectic layer and a distributed-Bragg reflecting layer (DBR) therebetween is disclosed. The distributed-Bragg reflecting layer is attached to said light emitting diode structure by vapor deposition and
7928461 Light-emitting diode April 19, 2011
The invention discloses a light-emitting diode which comprises a substrate, a first conducting-type semiconductor layer, plural pillars, a transparent insulating material, an illuminating layer, a second conducting-type semiconductor layer, a first transparent conducting layer and a
7923744 Semiconductor light-emitting device April 12, 2011
The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bu
7915605 LED packaged structure and applications of LED as light source March 29, 2011
LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the a
7834368 Light-emitting diode having additional stack structure November 16, 2010
A light-emitting diode includes a substrate, a primary stack structure, a secondary stack structure, a transparent insulating material and a transparent conducting layer in an embodiment. Each of the primary and the secondary stack structure has a first conducting-type semiconductor
7821017 Light-emitting diode and method for fabricating the same October 26, 2010
The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) formin
7804104 Light-emitting diode with high lighting efficiency September 28, 2010
The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting
7768027 Semiconductor light-emitting device August 3, 2010
The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bu
7745837 Semiconductor light-emitting device with high light-extraction efficiency and method for fabrica June 29, 2010
The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure.
7737453 Light emitting diode structure June 15, 2010
Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer
7659557 Semiconductor light-emitting device and method of fabricating the same February 9, 2010
The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first cond
7569420 Flip-chip packaging method for light emitting diode with eutectic layer not overlapping insulati August 4, 2009
A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conduct
7498607 Epi-structure with uneven multi-quantum well and the method thereof March 3, 2009
An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active lay
7408204 Flip-chip packaging structure for light emitting diode and method thereof August 5, 2008
A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conduct

 
 
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