| Patent Number |
Title Of Patent |
Date Issued |
| 8258531 |
Semiconductor devices |
September 4, 2012 |
| A semiconductor device includes a substrate and an epitaxy layer positioned on the substrate. In one embodiment of the present disclosure, the substrate includes an upper surface and a plurality of bumps positioned on the upper surface, and each of the bumps includes a top plane subs |
| 8247837 |
Light-emitting diode with high lighting efficiency |
August 21, 2012 |
| The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconduc |
| 8247822 |
Semiconductor light-emitting device |
August 21, 2012 |
| A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on |
| 8237184 |
Light-emitting semiconductor device |
August 7, 2012 |
| A semiconductor light-emitting device includes a conductive substrate, a light-emitting structure layer, a metallic reflective layer, a transparent conductive layer, a first patterned dielectric layer, and a second patterned dielectric layer. The light-emitting structure layer, the t |
| 8232567 |
Light emitting device with pillar structure having hollow structure |
July 31, 2012 |
| A light emitting device, includes a substrate; a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a transparent conductive layer on the second semiconductor layer; and a plurality of pillar |
| 8174039 |
Light-emitting diode device with high luminescent efficiency |
May 8, 2012 |
| The invention discloses a light-emitting diode including a substrate, a main stack structure, a plurality of secondary pillars, a transparent insulating material, a transparent conducting layer, a first electrode and a second electrode. The pillars are formed on the substrate and sur |
| 8143081 |
Method for dicing a diced optoelectronic semiconductor wafer |
March 27, 2012 |
| A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an |
| 8129736 |
Light-emitting diode |
March 6, 2012 |
| The invention discloses a light-emitting diode which includes a substrate on which a first conducting-type semiconductor layer, an illuminating layer and a second conducting-type semiconductor layer are formed sequentially, a transparent insulating material, a first transparent condu |
| 8124989 |
Light optoelectronic device and forming method thereof |
February 28, 2012 |
| The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes a first nitrogen-containing compound layer, an II/V group compound layer is provided o |
| 8044422 |
Semiconductor light emitting devices with a substrate having a plurality of bumps |
October 25, 2011 |
| A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type sem |
| 8013322 |
Light-emitting diode device with a double-layer contact structure and a fabrication method there |
September 6, 2011 |
| The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer being patterned to increase ohmic contact area of the double-layered contact layer structur |
| 8008679 |
Light emitting diode and method |
August 30, 2011 |
| A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second sub |
| 7999273 |
Light emitting device having pillar structure with roughness surface and the forming method ther |
August 16, 2011 |
| A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active |
| 7973326 |
Semiconductor structure combination for epitaxy of semiconductor optoelectronic device |
July 5, 2011 |
| The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an u |
| 7960749 |
Light-emitting device structure and semiconductor wafer structure with the same |
June 14, 2011 |
| A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, |
| 7956374 |
Semiconductor light-emitting device |
June 7, 2011 |
| The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer |
| 7956373 |
Semiconductor light-emitting device with high light-extraction efficiency |
June 7, 2011 |
| The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is |
| 7947991 |
High efficiency lighting device |
May 24, 2011 |
| A high efficiency lighting device comprising a light emitting diode structure, an eutectic layer and a distributed-Bragg reflecting layer (DBR) therebetween is disclosed. The distributed-Bragg reflecting layer is attached to said light emitting diode structure by vapor deposition and |
| 7928461 |
Light-emitting diode |
April 19, 2011 |
| The invention discloses a light-emitting diode which comprises a substrate, a first conducting-type semiconductor layer, plural pillars, a transparent insulating material, an illuminating layer, a second conducting-type semiconductor layer, a first transparent conducting layer and a |
| 7923744 |
Semiconductor light-emitting device |
April 12, 2011 |
| The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bu |
| 7915605 |
LED packaged structure and applications of LED as light source |
March 29, 2011 |
| LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the a |
| 7834368 |
Light-emitting diode having additional stack structure |
November 16, 2010 |
| A light-emitting diode includes a substrate, a primary stack structure, a secondary stack structure, a transparent insulating material and a transparent conducting layer in an embodiment. Each of the primary and the secondary stack structure has a first conducting-type semiconductor |
| 7821017 |
Light-emitting diode and method for fabricating the same |
October 26, 2010 |
| The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) formin |
| 7804104 |
Light-emitting diode with high lighting efficiency |
September 28, 2010 |
| The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting |
| 7768027 |
Semiconductor light-emitting device |
August 3, 2010 |
| The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bu |
| 7745837 |
Semiconductor light-emitting device with high light-extraction efficiency and method for fabrica |
June 29, 2010 |
| The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. |
| 7737453 |
Light emitting diode structure |
June 15, 2010 |
| Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer |
| 7659557 |
Semiconductor light-emitting device and method of fabricating the same |
February 9, 2010 |
| The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first cond |
| 7569420 |
Flip-chip packaging method for light emitting diode with eutectic layer not overlapping insulati |
August 4, 2009 |
| A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conduct |
| 7498607 |
Epi-structure with uneven multi-quantum well and the method thereof |
March 3, 2009 |
| An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active lay |
| 7408204 |
Flip-chip packaging structure for light emitting diode and method thereof |
August 5, 2008 |
| A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conduct |
