| |
 |
Hitachi Europe Limited Patents |
|
Assignee: Hitachi Europe Limited
Address: Maidenhead, GB
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6436784 |
Method of forming semiconductor structure |
August 20, 2002 |
| Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brilluin-zone-averaged energy bandgap (< |
| 6172793 |
Apparatus for coherently controlling an optical transition |
January 9, 2001 |
| Optically generated charge carriers in an optically responsive medium, such as an optical switch, which are produced in response to a first pulse of optical radiation (P.sub.1), are de-excited by directing a second pulse (P.sub.2) of optical radiation into the medium. The second pulse oc |
| 5997958 |
Method of depositing nanometer scale particles |
December 7, 1999 |
| Nanometre scale particles (3) e.g. of Au are deposited on a Si substrate (2) with a SiO.sub.2 surface layer (1) provided with receptor sites (4) of a first electrical polarity by treatment with APTMS solution. The Au particles (3) have a surface charge (5) of a second opposite polarity e |
|
|
|
