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High Q Laser Production GmbH Patents
Assignee:
High Q Laser Production GmbH
Address:
Hohenems, AT
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
7924902 Highly repetitive laser system having a compact design April 12, 2011
The invention relates to a highly repetitive laser system operating according to the reproducible amplifier principle. Said system comprises at least one amplified laser medium, a laser resonator provided with at least one resonator mirror and at least one modulator and a pump source,
7907644 High-repetition laser system for generating ultra-short pulses according to the principle of cav March 15, 2011
A high-repetition laser system for generating ultra-short pulses according to the principle of pulse decoupling is described. This is achieved by the use of an amplifying laser medium, a laser resonator with at least one resonator mirror and at least one pulse decoupling component, a
7738516 Method and apparatus for detecting and avoiding multiple-pulse states in ultra-short-pulse laser June 15, 2010
In a detection method for undesired double- or multiple-pulse states in an ultra-short-pulse laser system operated in the soliton regime and intended for generating femtosecond or picosecond pulses, comprising an amplifying laser medium for producing a laser emission, a laser resonator
7046711 High power and high gain saturation diode pumped laser means and diode array pumping device May 16, 2006
A diode pumped solid state laser for producing a high aspect ratio beam comprises a diode pumping array (1) on a diode array mount (3) and optical means for imaging a pump light beam onto a substantially asymmetrical spot with a smooth intensity profile. The pump light beam is pumpin
6944201 Compact ultra fast laser September 13, 2005
The solid state laser comprises a laser gain medium (1), pumping means for pumping the laser gain medium, and a laser cavity having a first end (3) and a second end (17), wherein the laser gain medium is at, or in the vicinity of, said first end (3) of said cavity. A semiconductor satura

 
 
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