The present invention is directed to bearings produced from a silicon nitride material. The silicon nitride material consists of a sintering aid selected from the group consisting of Al.sub.2O.sub.3 and Y.sub.2O.sub.3, silicon dioxide, and optionally, up to 10 mole %, based on the am
The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage du
