| Patent Number |
Title Of Patent |
Date Issued |
| 7622540 |
Metal carbonate initiator and method for polymerizing isocyanates using the same |
November 24, 2009 |
| Disclosed herein is a metal enolate initiator for polymerizing isocyanates and a method for polymerizing isocyanates by anionic polymerization using the same, in which the initiator forms a cluster upon the initiation and protects stability of terminal anions at the end of the chain to c |
| 7596325 |
Method and apparatus for pulse-amplitude equalization of rational harmonic mode-locked optical s |
September 29, 2009 |
| A method and an apparatus for pulse-amplitude equalization of rational harmonic mode-locked optical pulses provides modulation voltages greater than a switching voltage of a dual-electorde Mach-Zehnder modulator to electrodes of the Mach-Zehnder modulator, so that rational harmonic m |
| 7562107 |
Mixed-type adder comprising multiple sub-adders having different carry propagation schemes |
July 14, 2009 |
| Disclosed is a mixed-type adder with optimized design costs. The mixed-type adder includes I sub adders, (where, I is a positive number larger than 1). An overall bit width of the mixed-type adder is divided into I bit groups which are respectively allocated to the I sub adders. The |
| 7555050 |
Space-time block coding system combined with local polynomial approximation based beamformer |
June 30, 2009 |
| Provided is an STBC transceiving system with LPA-based beamformer, including: an STBC encoder having branches, in number of D, to generate output signals in number of D for an input signal; a beamformer having output antennas in number of D*B, being comprised of beam-forming subarray |
| 7541207 |
Light emitting device and method of manufacturing the same |
June 2, 2009 |
| A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic |
| 7519643 |
Montgomery multiplier for RSA security module |
April 14, 2009 |
| A Montgomery multiplier for providing security of information used in smart cards from hacking by a differential power analysis attack by minimizing power consumption difference by the input data. More particularly, the Montgomery multiplier applies an asynchronous dual rail lines me |
| 7491979 |
Reflective electrode and compound semiconductor light emitting device including the same |
February 17, 2009 |
| Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the |
| 7491564 |
Flip-chip nitride light emitting device and method of manufacturing thereof |
February 17, 2009 |
| A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in |
| 7485897 |
Nitride-based light-emitting device having grid cell layer |
February 3, 2009 |
| A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell |
| 7482639 |
Nitride-based light-emitting device |
January 27, 2009 |
| Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked s |
| 7467358 |
Asynchronous switch based on butterfly fat-tree for network on chip application |
December 16, 2008 |
| The present invention disclosed herein is an asynchronous switch for an network on chip application making possible between IP (Intellectual Property) communication among various IPs in the network on chip. The asynchronous switch according to the present invention in which comprises |
| 7462877 |
Nitride-based light emitting device, and method of manufacturing the same |
December 9, 2008 |
| A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer whic |
| 7425593 |
Amphiphilic triblock copolymers comprising poly(2-vinylpyridine) block and poly(alkyl isocyanate |
September 16, 2008 |
| The present invention relates to an amphiphilic triblock copolymer comprising a poly(2-vinylpyridine) block and a poly(alkylisocyanate) block and the preparation method thereof, and particularly relates to an amphiphilic triblock copolymer comprising a coil-shaped hydrophilic poly(2- |
| 7420539 |
Method of stabilizing haptic interface and haptic system using the same |
September 2, 2008 |
| A method of stabilizing a haptic interface and a haptic system using the same, are provided. The method comprises detecting a value of a physical parameter related to a motion generated by a human operator's action in an actual element included in the haptic device at each predetermined |
| 7417264 |
Top-emitting nitride-based light emitting device and method of manufacturing the same |
August 26, 2008 |
| Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer |
| 7372081 |
Nitride light emitting device and manufacturing method thereof |
May 13, 2008 |
| A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact |
| 7369249 |
Apparatus for measuring differential mode delay of multimode optical fiber |
May 6, 2008 |
| Disclosed herein is an apparatus for measuring the differential mode delay of multimode optical fiber. The apparatus includes a tunable laser source, an interferometer, a data collecting device, and a computer. The tunable laser source outputs light, frequencies of which vary linearly. |
| 7368514 |
Siloxane monomer containing trifluorovinylether group and sol-gel hybrid polymer prepared by usi |
May 6, 2008 |
| The present invention relates to a siloxane monomer containing a trifluorovinylether group and a sol-gel hybrid polymer prepared using the monomer, more particularly to siloxane monomer with novel structure prepared by reacting alkoxychlorosilane with a Grignard reagent containing a |
| 7358541 |
Flip-chip light emitting diode and method of manufacturing the same |
April 15, 2008 |
| Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is for |
| 7313672 |
Intellectual property module for system-on-chip |
December 25, 2007 |
| Disclosed is an IP module for an SOC which brings easiness in designing system architecture and integration. The IP module of the invention includes a controller for generating a control signal for IP module with reference to a handshake signal and sending a control signal which leads |
| 7285857 |
GaN-based III--V group compound semiconductor device and p-type electrode for the same |
October 23, 2007 |
| Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked |
| 7282946 |
Delay-insensitive data transfer circuit using current-mode multiple-valued logic |
October 16, 2007 |
| The present invention relates to a delay-insensitive DI data transfer circuit based on a current-mode multiple-valued logic for transferring data regardless of a delay time of transmission according to a length of wire.The delay-insensitive data transfer circuit of the present invent |
| 7190002 |
Flip-chip nitride light emitting device and method of manufacturing thereof |
March 13, 2007 |
| A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in |
| 7180094 |
Nitride-based light emitting device and method of manufacturing the same |
February 20, 2007 |
| Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting |
| 7173155 |
Terphenyl dihalide monomers having sulfonate groups and process for preparing the same |
February 6, 2007 |
| The present invention relates to a terphenyl dihalide monomer having sulfonate groups and a process for preparing the same. More particularly, the present invention relates to a terphenyl dihalide monomer having sulfonate groups prepared by a process comprising obtaining a terphenyl |
| 7169879 |
Bisphenyl-2,3,5,6-tetrafluoro-4-trifluoromethylphenyl phosphine oxide derivative and synthesis t |
January 30, 2007 |
| The present invention relates to bisphenyl-2,3,5,6-tetrafluoro-4-trifluoromethylphenylphosphine oxide compounds and synthesis thereof, more particularly to novel bisphenyl-2,3,5,6-tetrafluoro-4-trifluoromethylphenylphosphine oxide compounds having both a perfluorinated benzene substi |
| 7135536 |
Production method of polyisocyanate by end capping with acyl chloride |
November 14, 2006 |
| The present invention relates to a polymerization method of polyisocyanates endcapped with acyl chlorides, and more particularly to a process for preparing polyisocyanate with higher stability comprising endcapping a living polymer chain amidate anion with an acyl chloride derivative |
