| Patent Number |
Title Of Patent |
Date Issued |
| 7106764 |
High-repetition-rate passively mode-locked solid-state laser |
September 12, 2006 |
| A passively mode-locked solid-state laser is designed to emit a continuous-wave train (51, 52) of electromagnetic-radiation pulses, the fundamental repetition rate of the emitted pulses exceeding 1 GHz, without Q-switching instabilities. The laser includes an optical resonator (3.1), |
| 6826219 |
Semiconductor saturable absorber device, and laser |
November 30, 2004 |
| According to the invention, a semiconductor saturable absorber mirror device for reflecting at least a proportion of electromagnetic radiation of essentially one given optical frequency impinging on said device, comprises a substrate with a Bragg reflector, and on top of this Bragg r |
| 6778565 |
Pulse-generating laser |
August 17, 2004 |
| An optically pumped laser with an Er:Yb: doped solid state gain element is disclosed, which is passively mode-locked by means of a saturable absorber mirror. The laser is designed to operate at a fundamental repetition rate exceeding 1 GHz and preferably at an effective wavelength betwee |
| 6735234 |
Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser |
May 11, 2004 |
| A passively mode-locked optically pumped semiconductor vertical-external-cavity surface-emitting laser (OPS-EXSEL) is disclosed. The laser is mode locked by a semiconductor saturable absorber mirror (SESAM) which forms part of an external cavity. Both the beam-quality limitations of |
| 6551850 |
Optically nonlinear semiconductor material and a method for the production thereof |
April 22, 2003 |
| Essentially non-linear optical material characteristics of a semiconductor material grown at low temperatures can be significantly improved by the following measures: Doping with foreign atoms and/or additional thermal annealing. If, for example GaAs grown at 300.degree. C. is doped with |
| 6538298 |
Semiconductor saturable absorber mirror |
March 25, 2003 |
| A "low field enhancement" (LFR) semiconductor saturable absorber device design in which the structure is changed such that it has a resonant condition. Consequently, the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher |
| 6393035 |
High-repetition rate passively mode-locked solid-state laser |
May 21, 2002 |
| A passively mode-locked solid-state laser for emitting a continuous-wave train of electromagnetic-radiation pulses, the fundamental repetition rate of the emitted pulses exceeding 1 GHz, without Q-switching has an optical resonator, a solid-state laser gain element placed inside the opti |
