| Patent Number |
Title Of Patent |
Date Issued |
| 7368750 |
Semiconductor light-receiving device |
May 6, 2008 |
| A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrate and has a lower |
| 7352086 |
Switching circuit, switching module and method of controlling the switching circuit |
April 1, 2008 |
| A switching circuit includes switching transistors connected to one of an input terminal and an output terminal of the switching circuit, and a control bias supply circuit that supplies a control bias for cutting off all the switching transistors to the switching transistors when all of |
| 7335542 |
Semiconductor device with mushroom electrode and manufacture method thereof |
February 26, 2008 |
| A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconduct |
| 7303933 |
Process of manufacturing a semiconductor device |
December 4, 2007 |
| A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V |
| 7267893 |
Optical multilayer film and optical semiconductor device including the same |
September 11, 2007 |
| An optical multilayer film includes: a first layer; a second layer that contains titanium oxynitride as a main component; and a third layer that contains magnesium fluoride as a main component; the first layer that has a different refractive index from that of the second layer or the thi |
| 7253513 |
High-frequency switch device and electronic device using the same |
August 7, 2007 |
| A switch device includes a semiconductor chip, and at least two switches formed on the semiconductor chip. Ground parts of the at least two switches are arranged between said at least two switches. |
| 7223645 |
Semiconductor device with mushroom electrode and manufacture method thereof |
May 29, 2007 |
| A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconduct |
| 7157756 |
Field effect transistor |
January 2, 2007 |
| A field-effect transistor includes a channel layer that is formed on a predetermined semiconductor layer and has an impurity concentration varying from a low value to a high value, and a source region and a drain region each having a bottom face above the predetermined semiconductor |
| 7144164 |
Optical device and method of manufacturing the same |
December 5, 2006 |
| An optical device includes a rigid pipe provided to cover the outer peripheries of a fixing joint portion and an optical fiber. The tip portion of the rigid pipe has a gap for providing flexibility between the optical fiber and the tip portion. Therefore, the rigid pipe suppresses be |
| 7122393 |
Optical semiconductor device and method of fabricating the same |
October 17, 2006 |
| An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than that of the interme |
| 7105798 |
Semiconductor light-receiving device with multiple potentials applied to layers of multiple cond |
September 12, 2006 |
| A semiconductor light-receiving device includes: a substrate that has a first surface and a second surface facing each other; a first semiconductor layer that is formed on the first surface of the substrate and includes at least one semiconductor layer of a first conductivity type; a |
| 7091527 |
Semiconductor photodetection device |
August 15, 2006 |
| A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a cont |
| 7081639 |
Semiconductor photodetection device and fabrication process thereof |
July 25, 2006 |
| A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile strain, wherein the |
| 7067743 |
Transmission line and device including the same |
June 27, 2006 |
| A transmission line includes a transmission line substrate, a signal line, and a first ground pattern that is provided on the transmission line substrate and is located between the transmission line substrate and a metal wire used to connect the signal line to a component. |
| 7049179 |
Semiconductor device and manufacturing method thereof |
May 23, 2006 |
| A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and the side surfaces of the insulat |
| 7015109 |
Interdigital capacitor and method for adjusting the same |
March 21, 2006 |
| An interdigital capacitor includes a semiconductor substrate, and a pair of comb-like electrodes formed on the semiconductor substrate. At least one of the pair of comb-like electrodes includes a cutting target portion. |
| 6998679 |
Semiconductor device and method of fabricating the same |
February 14, 2006 |
| A semiconductor device includes a gate electrode on a semiconductor substrate, a source electrode and a drain electrode that are provided on the semiconductor substrate, the gate electrode being interposed between the source electrode and the drain electrode, an insulating layer cove |
| 6982441 |
Semiconductor device with a super lattice buffer |
January 3, 2006 |
| A semiconductor device includes a compound semiconductor substrate having a resistivity less than 1.0.times.10.sup.8 Ohm-cm at least at one surface thereof, a buffer layer formed on the compound semiconductor substrate and having a super lattice structure, and an active layer formed on t |
| 6975031 |
Semiconductor device and chip carrier |
December 13, 2005 |
| There are provided a carrier substrate, a temperature sensing resistor film formed directly on the carrier substrate, first and second conductive patterns formed on the carrier substrate and connected to both ends of the temperature sensing resistor film respectively, and a semiconductor |
| 6972638 |
Directional coupler and electronic device using the same |
December 6, 2005 |
| A directional coupler includes a transmission line, and a coupling line, the transmission line being coupled with the coupling line. The transmission line is located at a height position different from that of the coupling line with respect to a reference plane. The transmission line |
| 6955994 |
Method of manufacturing semiconductor device and method of manufacturing optical wave guide |
October 18, 2005 |
| A method of manufacturing a semiconductor device, including the steps of (a) rowing an InP layer on a surface of starting growth, resulting in the InP layer having a convex structure, and (b) wet etching the InP layer by an enchant including hydrochloric acid and acetic acid, and thereby |
| 6949811 |
Device having interdigital capacitor |
September 27, 2005 |
| A device includes a transistor, and two interdigital capacitors. The transistor is located on an imaginary extension line aligned with a common electrode of the two interdigital capacitors. |
| 6944252 |
Phase comparator circuit |
September 13, 2005 |
| A data signal DATA is captured by flip-flops 10 and 11 alternately every half cycle time of a clock signal CLK, outputs of the flip-flops 10 and 11 are delayed by respective delay circuits 15 and 16 to generate delayed signals 10QD and 11QD, and an output of the flip-flop 10 and the dela |
| 6930334 |
High frequency semiconductor device |
August 16, 2005 |
| A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering electrode provided on the active region and connected to a ground potential; and a back |
| 6924918 |
Optical modulator and method of manufacturing the same |
August 2, 2005 |
| An optical modulator includes a p- or n-type semiconductor layer that is provided at an upper part of an optical waveguide path, and modulating electrodes that are provided at intervals on the semiconductor layer in an extension area of the optical waveguide path. The semiconductor layer |
| 6924541 |
Semiconductor photodetection device |
August 2, 2005 |
| A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a cont |
| 6924162 |
Process of manufacturing a semiconductor device |
August 2, 2005 |
| A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V |
| 6900482 |
Semiconductor device having divided active regions with comb-teeth electrodes thereon |
May 31, 2005 |
| A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a |
| 6882667 |
Optical semiconductor device and method for controlling the same |
April 19, 2005 |
| An optical semiconductor device includes an element in which a laser diode and an optical modulator are integrated, and a circuit that sets a common node of the laser diode and the optical modulator at a reference potential different from a ground potential and drives the laser diode and |
| 6876683 |
Optical semiconductor device |
April 5, 2005 |
| A package for hermetically sealing a semiconductor laser which outputs light having a wavelength of 1.1 .mu.m or more is filled with a gas containing an oxidizing gas such as oxygen or ozone. The oxidizing gas in the package oxidizes hydrogen in the package to prevent hydrogen embrit |
| 6853054 |
High frequency semiconductor device |
February 8, 2005 |
| A high frequency semiconductor device including wiring layers which are formed above a semiconductor substrate and in which transmission lines are formed by combining with a ground plate having a potential fixed at the ground potential, at least one crossing portion in which the wiring l |
| 6831265 |
Photodetector having improved photoresponsitivity over a broad wavelength region |
December 14, 2004 |
| A photodetector includes an optical absorption layer having a thickness d optimized with regard to a voltage applied across the optical absorption layer such that there occurs an increase of optical absorption coefficient at the wavelength of 1580 nm or longer. |
| 6825809 |
High-frequency semiconductor device |
November 30, 2004 |
| A structure for eliminating the influence of an antenna line connected to the patch electrode on the antenna characteristics of a patch antenna built in an MMIC is disclosed. A through-hole is formed in the antenna ground plane which is provided under the patch electrode with an inte |
| 6822984 |
Device for and method of testing semiconductor laser module |
November 23, 2004 |
| In the semiconductor laser module testing device, a temperature control power source changes a temperature of a wavelength locker module, and a wavelength monitoring bias circuit detects an output of a wavelength monitor in the changed temperature range and computes a correlation bet |
| 6809344 |
Optical semiconductor device and method of fabricating the same |
October 26, 2004 |
| An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than that of the interme |
| 6807199 |
Wavelength inspection method of a semiconductor laser diode and a wavelength inspection unit the |
October 19, 2004 |
| In order to tune an oscillation wavelength of a semiconductor laser diode to a target wavelength, the amount of change of a wavelength to the amount of change of a wavelength varying item is determined by actual measurement and a basic wavelength coefficient is renewed by using the ratio |
| 6806181 |
Method of fabricating an air bridge |
October 19, 2004 |
| A protective pattern is formed on a semiconductor substrate in a shape covering a circuit region and exposing an air bridge connecting portion, a metallic film and an insulating film are formed to cover the protective pattern, the metallic film and the insulating film are patterned to fo |
| 6803312 |
Semiconductor device and method for fabricating the same |
October 12, 2004 |
| A method for fabricating a semiconductor device includes the steps of forming a mask on a predetermined layer, said mask having a first opening at a given side of the predetermined layer and a second opening that continues to and is smaller than the first opening, and forming a plating |
| 6800878 |
Field-effect type compound semiconductor device and method for fabricating the same |
October 5, 2004 |
| At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the etching stopper layer, and InGaP having an In composition ratio of 0.66 through 0.9 is used as th |
| 6788521 |
Capacitor and method for fabricating the same |
September 7, 2004 |
| A capacitor which includes a lower electrode 12 formed on a substrate 10; an insulation film 16 having an opening 24 on the lower electrode 12; a capacitor dielectric film 30 formed on the lower electrode 12 in the opening 24 and having a larger thickness at a peripheral part of the |
| 6787909 |
High frequency semiconductor device |
September 7, 2004 |
| A structure for preventing MMICs (Monolithic Microwave Integrated Circuits) from deterioration in the high-frequency transmission characteristics thereof, which results from mechanical pressure applied to the pads during the wire-bonding thereto for external connection. The structure inc |
| 6787821 |
Compound semiconductor device having a mesfet that raises the maximum mutual conductance and cha |
September 7, 2004 |
| There is provided a compound semiconductor device that comprises a substrate formed of a first compound semiconductor, a graded channel layer formed on the substrate and formed of a second compound semiconductor layer, that lowers mostly an energy band gap in its inside by continuously |
| 6784036 |
Method for making semiconductor device |
August 31, 2004 |
| A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate electrode and a second opening pla |
| 6781165 |
Hetero-junction bipolar transistor with gold out-diffusion barrier made from InP or InGaP |
August 24, 2004 |
| A hetero-junction bipolar transistor includes a collector layer, a base layer and an emitter layer, an emitter electrode containing Au being provided for the emitter layer, and an Au-diffusion barrier layer of InP or InGaP interposed between the emitter electrode and the base layer. |
| 6778572 |
Electrode structure, process for fabricating electrode structure and semiconductor light-emittin |
August 17, 2004 |
| An electrode structure includes a conductive film 24c formed on a base substrate 10 through an insulation film. The insulation film comprises a plurality of poles 36 of polyimide, a first film 38 formed on the side surfaces of the poles and formed of an insulation material of a high |
| 6774484 |
High frequency semiconductor device |
August 10, 2004 |
| A multilayer wiring structure for MMICs includes a power-supply wiring formed of a multilayer wiring (a plurality of power-supply lines). The wires are interconnected by throughholes. A power-supply current is divided and supplied to the lines. A large current can be supplied to the |
| 6768147 |
Semiconductor device and method of fabricating the same |
July 27, 2004 |
| A compound semiconductor device includes a gate electrode, a drain electrode, and a source electrode, and a p-type semiconductor layer provided between the gate electrode and the drain electrode. The p-type semiconductor layer has a lower acceptor concentration on a drain side thereo |
| 6753587 |
Semiconductor photo detecting device and its manufacturing method |
June 22, 2004 |
| A high response speed semiconductor photo detecting device having a thin photo absorption layer which avoids an optical efficiency loss. The semiconductor photo detecting devices are formed on a semiconductor substrate having an inclined cleavage face to a principal plane of the subs |
| 6748746 |
Device and method for controlling temperature of semiconductor module |
June 15, 2004 |
| A device and method for controlling the temperature of a semiconductor module in which the semiconductor module is sandwiched by a first supporting unit and a second supporting unit. An area of the second supporting unit with which the semiconductor module comes into contact is shiel |
| 6747299 |
High frequency semiconductor device |
June 8, 2004 |
| A high frequency semiconductor device includes a ground plate, an insulating layer, a power-supply conductor, an insulating interlayer, and a strip line as a line conductor. The power-supply conductor is disposed above the ground plate, with the insulating layer provided therebetween. |
