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Fujimi Incorporated Patents
Assignee:
Fujimi Incorporated
Address:
Kiyosu-shi, JP
No. of patents:
62
Patents:


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Patent Number Title Of Patent Date Issued
8080476 Polishing composition and polishing process December 20, 2011
To provide a polishing composition particularly useful for an application to polish a conductor layer made of copper in a semiconductor wiring process, and a polishing process employing it. A polishing composition comprising an anionic surfactant and a nonionic surfactant, characterized
8075860 Thermal spray powder and method for forming a thermal spray coating December 13, 2011
A thermal spray powder includes granulated and sintered yttria particles obtained by granulating and sintering a raw material powder in air or oxygen. The primary particles constituting the granulated and sintered yttria particles have an average particle size between 0.5 and 1.5 .mu.m
8066795 Thermal spray powder and thermal spray coating November 29, 2011
A thermal spray powder including cermet particles, each of which contains metal containing at least one selected from the group consisting of cobalt, chrome, and nickel, and tungsten carbide. The ratio of the summed weight of cermet particles having a particle size of 25 .mu.m or more in
7998229 Polishing composition and polishing method August 16, 2011
The polishing composition contains polyoxyethylene sorbitan mono-fatty acid ester, silicon dioxide, water soluble cellulose, an alkaline compound, and water. The content of polyoxyethylene sorbitan mono-fatty acid ester in the polishing composition is less than 0.0025% by mass. The p
7867909 Polishing composition and polishing method January 11, 2011
A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer
7862911 Thermal spray coating and thermal spray powder January 4, 2011
A thermal spray coating is made of cermet and provided on the surface of a base. The value that is gained by further dividing the value, which is gained by dividing the coefficient of thermal expansion of the thermal spray coating by the thickness of the thermal spray coating (unit:
7842383 Yttrium-aluminum double oxide thermal spraying powder November 30, 2010
A thermal spraying powder contains granulated and sintered particles of an yttrium-aluminum double oxide formed by granulating and sintering raw-material particles. The crushing strength of the granulated and sintered particles is 15 MPa or more, and 10% particle size of the granulat
7837967 Thermal spray powder and method for forming thermal spray coating November 23, 2010
A thermal spray powder contains particles composed of an oxide of any of the rare earth elements having an atomic number of 39 or from 59 to 70. The crushing strength of the particles is 80 MPa or greater. The ratio of bulk specific gravity to true specific gravity of the thermal spray
7776450 Thermal spraying powder comprising chromium carbide and alloy containing cobalt or nickel, therm August 17, 2010
A thermal spraying powder contains 30 to 50% by mass of chromium carbide with the remainder being an alloy containing chromium, aluminum, yttrium, and at least one of cobalt and nickel. The thermal spraying powder has an average particle size of 20 to 60 .mu.m. The thermal spraying powde
7772173 Rinsing composition, and method for rinsing and manufacturing silicon wafer August 10, 2010
A rinsing composition contains at least one water-soluble polymer selected from a water-soluble polysaccharide, polyvinyl alcohol, polyethylene oxide, polypropylene oxide, a copolymer of ethylene oxide and propylene oxide, and a hydrophilic polymer obtained by adding an alkyl group or an
7700060 Yttria thermal spray powder and method for forming a thermal spray coating April 20, 2010
A thermal spray powder contains granulated and sintered yttria particles and fine yttria particles, the average particle diameter of the fine yttria particles being no more than 1 .mu.m. The content of the fine yttria particles in the thermal spray powder is 1,000 to 10,000 ppm by ma
7687393 Polishing composition and rinse composition March 30, 2010
A polishing composition for reducing the haze level of the surface of silicon wafers contains hydroxyethyl cellulose, polyethylene oxide, an alkaline compound, water, and silicon dioxide.
7655057 Polishing composition and polishing method February 2, 2010
A polishing composition contains a compound represented by the general formula (1) below and abrasive grains. In the general formula (1), X represents a residue of polyether polyol (having a polyether chain containing an oxyethylene group in an amount of 20 to 90% by mass) derived fr
7597729 Polishing composition and polishing method using the same October 6, 2009
A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition preferably further contains an alkali compound, a water-soluble polymer, or a chelating agent
7485162 Polishing composition February 3, 2009
A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an
7481950 Polishing composition and polishing method using the same January 27, 2009
A polishing composition of the present invention, which is used in precision polishing the surface of a wafer for semiconductor devices, remarkably reduces haze that occurs on the surface of the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-
7368387 Polishing composition and polishing method May 6, 2008
A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second organic acid is citric acid, the first organic acid is preferably malic acid, while when the
7282079 Thermal spray powder October 16, 2007
A thermal spray powder includes cermet particles. Each cermet particle includes tungsten carbide particles having a mean primary particle size of 3 to 9 .mu.m and metal particles or ceramic particles containing chrome. The mean particle size of the cermet particles is preferably from
7279221 Thermal spraying powder October 9, 2007
A thermal spraying powder includes granulated and sintered particles of an yttrium-aluminum double oxide obtained by granulating and sintering a raw powder containing yttrium and aluminum. The total volume of fine pores having a diameter of 6 .mu.m or less in one gram of the granulated a
7223379 Process for producing aluminum oxide powder May 29, 2007
To provide a process for producing an aluminum oxide powder, whereby the content of impurities is controlled by a physical means. A process for producing an aluminum oxide powder, which comprises pulverizing electrofused alumina by a batch system and classifying the obtained pulveriz
7217989 Composition for selectively polishing silicon nitride layer and polishing method employing it May 15, 2007
To provide a polishing composition whereby the stock removal rate of a silicon nitride layer is higher than the stock removal rate of a silicon oxide layer, there is substantially no adverse effect against polishing planarization, and a sufficient stock removal rate of a silicon nitride
7211122 Polishing composition and rinse composition May 1, 2007
A polishing composition for reducing the haze level of the surface of silicon wafers contains hydroxyethyl cellulose, polyethylene oxide, an alkaline compound, water, and silicon dioxide.
7211121 Polishing composition May 1, 2007
The present invention relates to a polishing composition more suitable for use in polishing synthetic resin products or metal products. The polishing composition includes a reaction product produced by a reaction between a polyalkylene oxide and a compound having a functional group h
7204865 Polishing composition April 17, 2007
The present invention relates to a polishing composition that can be preferably used to polish a silicon wafer. The polishing composition includes a block polyether represented by the chemical formula HO--(EO).sub.a--(PO).sub.b--(EO).sub.c--H, wherein EO represents an oxyethylene gro
7189684 Polishing composition and method for forming wiring structure using the same March 13, 2007
A polishing composition capable of satisfactorily polishing a semiconductor. The first polishing composition of the present invention includes silicon dioxide, at least one component selected from periodic acids and salts thereof, at least one component selected from tetraalkyl ammon
7141344 Electrostatic image developer and image-forming process November 28, 2006
An image-forming process, which comprises steps of developing an electrostatic latent image on an inorganic photoreceptor with an electrostatic image developer containing 0.1 to 5.0% by weight, based on the toner particles, of silicon carbide fine powder of 0.2 to 1.5 .mu.m in averag
7052522 Polishing composition and polishing method using the same May 30, 2006
A polishing composition of the present invention, which is used in polishing the edge of a wafer for semiconductor devices, effectively suppresses remaining amounts of abrasives on the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble po
6984255 Thermal spraying powder and method of forming a thermal sprayed coating using the same January 10, 2006
The present invention relates to a thermal spraying powder capable of reliably allowing the achievement of a thermal sprayed coating having superior characteristics. A thermal spraying powder according to a first embodiment of the invention includes a predetermined amount of each of
6852009 Polishing composition and polishing method employing it February 8, 2005
A polishing composition which comprises the following components (a) to (d): (a) silicon dioxide, (b) at least one basic substance selected from the group consisting of an inorganic salt of an alkali metal, an ammonium salt, piperazine and ethylenediamine, (c) at least one chela
6849099 Polishing composition February 1, 2005
There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.
6838016 Polishing composition and polishing method employing it January 4, 2005
A polishing composition comprising the following components (a) to (g): (a) an abrasive which is at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) a polyalkyleneimine, (c) at least one mem
6814766 Polishing composition and polishing method employing it November 9, 2004
A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d): (a) silicon dioxide, (b) periodic acid, (c) at least one pH controlling agent selected from the group consisting
6811583 Polishing composition for a substrate for a magnetic disk and polishing method employing it November 2, 2004
A polishing composition for a substrate for a magnetic disk, which comprises: (a) a polishing accelerator composed of at least one compound selected from the group consisting of malic acid, glycolic acid, succinic acid, citric acid, maleic acid, itaconic acid, malonic acid, iminodiace
6797626 Method of polishing copper layer of substrate September 28, 2004
The method of polishing a copper layer of a substrate is capable of improving a stock removal rate, etc. The method comprises the steps of: supplying a substrate onto an polishing pad of an polishing plate with a copper layer facing the polishing pad; pressing the substrate onto the
6773476 Polishing composition and polishing method employing it August 10, 2004
A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether,
6679929 Polishing composition and polishing method employing it January 20, 2004
A polishing composition comprising the following components (a) to (g): (a) at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) an aliphatic carboxylic acid, (c) at least one basic compound se
6645051 Polishing composition and polishing method for polishing a substrate to be used for a memory har November 11, 2003
A polishing composition for a substrate to be used for a memory hard disk, which comprises the following components (a) to (d): (a) water, (b) at least one compound selected from the group consisting of a polyoxyethylene polyoxypropylene alkyl ether and a polyoxyethylene polyoxypro
6641917 Spray powder and method for its production November 4, 2003
A spray powder to be used for forming a coating, which comprises from 80 to 97 wt %, based on the total weight, of a cermet powder and from 3 to 20 wt %, based on the total weight, of a metal powder, wherein the metal powder comprises Cr and Ni in a total amount of at least 90 wt %, base
6626967 Polishing composition and polishing method employing it September 30, 2003
A polishing composition comprising the following components (a) to (c): (a) colloidal silica; (b) at least one bicarbonate selected from the group consisting of ammonium bicarbonate, lithium bicarbonate, potassium bicarbonate, sodium bicarbonate and a mixture thereof; and (c) water;
6565619 Polishing composition and polishing method employing it May 20, 2003
A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, ox
6482534 Spray powder, thermal spraying process using it, and sprayed coating November 19, 2002
A spray powder which has a particle size of from 6 to 63 .mu.m and which comprises from 75 to 95 wt % of a ceramic phase made of a WC powder and at least one chromium carbide powder selected from the group consisting of Cr.sub.3 C.sub.2, Cr.sub.7 C.sub.3 and Cr.sub.23 C.sub.6, and from 5
6478832 Grinding stone, process for its production and grinding method employing it November 12, 2002
A grinding stone using a metal material as the main material of a bonding material, which comprises:(A) abrasive grains of at least one member selected from the group consisting of diamond, cubic boron nitride, silicon carbide and aluminum oxide,(B) a bonding material made of at least on
6440186 Polishing composition and polishing method employing it August 27, 2002
A polishing composition comprising: (a) an abrasives (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water,wherein the abrasive of component (a) has a primary particle
6428721 Polishing composition and polishing method employing it August 6, 2002
A polishing composition comprising the following components: (a) an abrasive, (b) .alpha.-alanine, (c) hydrogen peroxide, and (d) water.
6423125 Polishing composition July 23, 2002
A polishing composition for magnetic disk substrates to be used for memory hard disks, which comprises: (a) water; (b) at least one phosphate. compound selected from the group consisting of a phosphate ester of ethoxylated alkylalcohol and a phosphate ester of ethoxylated arylalcoh
6355075 Polishing composition March 12, 2002
A polishing composition comprising an abrasive, an anticorrosive, an oxidizing agent, an acid, a pH regulator and water and having a pH within a range of from 2 to 5, wherein the abrasive is colloidal silica or fumed silica, and its primary particle size is at most 20 nm.
6315803 Polishing composition and polishing process November 13, 2001
Object: To provide a polishing composition which is capable of polishing a tantalum-containing compound at a high stock removal rate and whereby the copper surface after polishing is scarcely corroded, and to provide a polishing process where dishing can be minimized. Means to accomplish
6309434 Polishing composition and method for producing a memory hard disks October 30, 2001
A polishing composition for a magnetic disk substrate to be used for a memory hard disk, which comprises:(a) colloidal silica as an abrasive in an amount within a range of from 0.1 to 35 wt % based on the total weight of the composition;(b) iron nitrate as a polishing accelerator in an amoun
6280652 Edge polishing composition August 28, 2001
An edge polishing composition for wafers, comprising water and silicon dioxide having an average particle size of from 70 to 2,500 nm.
6248144 Process for producing polishing composition June 19, 2001
A process for producing a polishing composition, which comprises preliminarily adjusting water to pH 2-4, adding from 40 to 60 wt % of fumed silica to the water under high shearing force, adding water to lower the viscosity to 2-10000 cps, stirring the mixture under low shearing forc
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