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Fuji Electric Co., Ltd. Patents
Assignee:
Fuji Electric Co., Ltd.
Address:
Kawasaki, JP
No. of patents:
1226
Patents:




Patent Number Title Of Patent Date Issued
RE35507 Repulsion type circuit breaker control device May 13, 1997
A repulsion type circuit breaker movable contact device comprising a first movable contact, an opening/closing mechanism which drives the first movable contact for opening and closing, a second movable contact for contacting the first movable contact, the second movable contact being
RE35475 Photosensitive member for electrophotography with thiophene containing moiety on charge transpor March 11, 1997
A photosensitive member for electrophotography have a photosensitive layer 20 provided on an electroconductive substrate 1 and, containing a compound selected from among derivatives of thiophene, diphenylthiophene or oxadiazole. When the surface of the photosensitive member was positivel
RE35246 Layed photosensitive material and electrophotography comprising selenium, arsenic and tellurium May 21, 1996
A photosensitive material for electrophotography is provided, which comprises in sequence an electroconductive substrate, a carrier transport layer composed of a selenium-arsenic alloy, a carrier generation layer composed of a selenium-tellurium alloy and a surface coating layer comp
RE31438 Infrared ray gas analyzing apparatus November 8, 1983
An infrared type gas analyzer having measuring and reference cells is equipped with alternately switchable valves so that the cells can alternate acting as the measuring and reference cells. The output of the detector is stored for each configuration and these outputs are subtracted
D527705 Electric connector September 5, 2006
D525204 Electric connector July 18, 2006
D515506 Electric connector February 21, 2006
D471561 Coolant pump March 11, 2003
D468687 Manual motor starter January 14, 2003
D396450 Hybrid integrated circuit for electric power control July 28, 1998
D396213 Integrated circuit device July 21, 1998
D396212 Integrated circuit device July 21, 1998
D396211 Integrated circuit device July 21, 1998
D389808 Hybrid integrated circuit for electric power control January 27, 1998
D364385 Semi-conductor element with terminal casing November 21, 1995
D364384 Semi-conductor element with terminal casing November 21, 1995
D364383 Semi-conductor element with terminal casing November 21, 1995
D362259 Distance measuring unit for an automatic focusing camera September 12, 1995
D362258 Distance measuring unit for an automatic focusing camera September 12, 1995
D360619 Hybrid integrated circuit for electric power control July 25, 1995
D357672 Hybrid integrated circuit for electric power control April 25, 1995
D357671 Hybrid integrated circuit for electric power control April 25, 1995
D357462 Hybrid integrated circuit for electric power control April 18, 1995
7445983 Method of manufacturing a semiconductor integrated circuit device November 4, 2008
A method of manufacturing a semiconductor integrated circuit (IC) device that integrates a TLPM (trench lateral power MOSFET) and one or more planar semiconductor devices on a semiconductor substrate. In manufacturing the semiconductor IC device according to one embodiment, a trench
7445982 Method of manufacturing a semiconductor integrated circuit device November 4, 2008
A method of manufacturing a semiconductor integrated circuit (IC) device that integrates a TLPM (trench lateral power MOSFET) and one or more planar semiconductor devices on a semiconductor substrate. In manufacturing the semiconductor IC device according to one embodiment, a trench
7365392 Semiconductor device with integrated trench lateral power MOSFETs and planar devices April 29, 2008
Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Ther
7352548 Composite integrated semiconductor device April 1, 2008
A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input
7344935 Method of manufacturing a semiconductor integrated circuit device March 18, 2008
A method of manufacturing a semiconductor integrated circuit (IC) device that integrates a TLPM (trench lateral power MOSFET) and one or more planar semiconductor devices on a semiconductor substrate. In manufacturing the semiconductor IC device according to one embodiment, a trench
7317604 Over-current protection device January 8, 2008
An over-current protection device is constituted of a current detection unit for detecting a current from a power-supply source to a load having a magnetism detection element with a magnetic impedance (MI) effect, an AC-current supply device for supplying an AC current to the detection
7274543 Over-voltage protection circuit September 25, 2007
An over-voltage protection circuit for protecting an integrated circuit includes an external power supply terminal to which a power supply voltage is supplied, a grounding terminal to which a ground voltage is supplied, and an internal power supply terminal for supplying the power su
7253476 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa August 7, 2007
A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on resistance while maintaining a high breakdown voltage. The semiconductor d
7218494 Overload current protection device using magnetic impedance element May 15, 2007
An overload current protection device for cutting off power applied from a power supply to a load (3) such as a motor by means of a contactor (switch) (2) at overloading. With the configuration, an element (40) having a magnetic impedance effect as current detection units (4a, 4b, 4c
7205020 Magnetic recording medium and method for manufacturing same April 17, 2007
A magnetic recording medium has a non-magnetic under-layer, a magnetic layer, a protective film and a liquid lubricant layer sequentially laminated on a non-magnetic substrate. The magnetic layer has a multi-layer structure laminated with two or more magnetic layer components, each o
7180798 Semiconductor physical quantity sensing device February 20, 2007
A semiconductor physical quantity sensing device to perform electrical trimming at low cost by using a CMOS manufacturing process and a small number of terminals. The semiconductor physical quantity sensing device includes a wheatstone bridge circuit, which is a sensor element, an au
7168285 Door device for vending machine January 30, 2007
A single sheet of a metal member is pressed to form an integrally molded structure of a front, a side, and a top of a door body without any joint. In addition, the front of the door body and a concave for displaying sample products or the like are integrally produced by molding. By virtu
7160571 Method of manufacturing a magnetic recording medium January 9, 2007
A method of manufacturing a magnetic recording medium facilitates preventing a film inflation from occurring in an environmental condition range between -40.degree. C. and 80.degree. C. and an 80% relative humidity. The magnetic recording medium includes a plastic substrate and an un
7153441 Method for manufacturing thin-film magnetic recording medium December 26, 2006
A thin-film magnetic recording medium is produced by forming a laminate for magnetic data recording on a nonmagnetic substrate through a dry process, forming a protection layer on the laminate also through a dry process, plasma-etching the protection layer, and forming a lubricant la
7147944 Substrate for magnetic recording media using dried thermoplastic norbornene resin and magnetic r December 12, 2006
The gas components in thermoplastic norbornene resin pellets are suppressed below certain levels by drying the resin under vacuum or under the ordinary pressure and under vacuum. A substrate for magnetic recording media is manufactured by injection-molding the resin dried by the meth
7135816 Color conversion filter and color conversion color display having the same November 14, 2006
A color conversion filter substrate includes a transparent support substrate, one or more types of color conversion layers with a thickness more than 5 .mu.m formed on the support substrate in a desired pattern, and a protective layer formed of a transparent material for covering the
7121116 Method and device for producing oxygen October 17, 2006
A oxygen-production device includes a pulse-tube cryocooler for cooling air to liquefy oxygen, and a main container for obtaining and retaining liquefied oxygen. The main container has a heat regenerator, a cold head, and a pulse tube of the pulse-tube cryocooler therein. A temperature
7107721 Door apparatus September 19, 2006
The door apparatus has a linear motor for applying a thrust to move a door, a lock device for performing a locking operation and an unlocking operation, and a control unit for controlling the linear motor and the lock device. Upon determining that the lock device is still in a locked
7085116 Overload current protection device using magnetic impedance element August 1, 2006
In an overload current protection device for cutting off power from a power supply to a load (3) such as a motor by means of a contactor (switch) (2) at overloading, an MI element having a magnetic impedance (MI) effect as current detectors (4a, 4b, and 4c) is installed at a position
7061213 DC-DC converter June 13, 2006
A DC--DC converter switches a semiconductor switch device for converting a DC voltage to a certain level and supplies the converted DC voltage to a load. The DC--DC converter is configured to be able to switch between a first feedback control mode and a second feedback control mode. The
7056793 Semiconductor device and a method for manufacturing same June 6, 2006
A semiconductor device, and method for manufacturing the same, manufactured by a simpler process, compared to a conventional trench lateral power MOSFET for a withstand voltage of 80 V, having a smaller device pitch and lower on-resistance per unit area as compared with a conventiona
7049202 Method of manufacturing semiconductor device May 23, 2006
A method of manufacturing a lateral trench-type MOSFET exhibiting a high breakdown voltage and including an offset drain region around a trench. Specifically, impurity ions are irradiated obliquely to the side wall of a trench to implant the impurity ions only into to the portion of a
7046013 Open-circuit failure detection circuit May 16, 2006
A broken-wire-failure detection circuit connected to a higher circuit includes a power line, a signal line, a ground line, and at least one of the first resistance device connected between the power line and the signal line and the second resistance device connected between the signal
7042692 Electromagnetic apparatus drive apparatus May 9, 2006
Conventionally, a non-conductive period is provided in a region in the vicinity of zero of an AC power voltage via a voltage detection circuit 14 to turn off reliably. The FET 17 maintains the ON state within several switching cycles after the non-conductive interval to rapidly restore t
7031131 Overload current protection apparatus April 18, 2006
A current sensor which constitutes an overload protection apparatus and senses a current supplied from a power source to a load is constituted by providing a magnetic sensor having the effect of magnetic impedance (MI), an AC supply means which impresses AC on this sensor, a bias current
7023109 Uninterruptible power source apparatus April 4, 2006
An uninterruptible power supply unit essentially includes: a DC power supply source 3, a parallel converter 4, and a series converter 6 that are individually connected in parallel to both ends of an electrolytic capacitor Cdc having a pair of capacitors C1 and C2. An input terminal P
7014882 Magnetic recording medium and manufacturing method thereof March 21, 2006
A high-density magnetic recording medium uses a nonmetallic substrate, while still providing high in-plane magnetic anisotropy and remanent coercivity. Such a medium can be formed by depositing a seed layer on a textured surface of the nonmetallic substrate in a gas mixture containing

 
 
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