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Commisariat l'Energie Atomique Patents
Assignee:
Commisariat l'Energie Atomique
Address:
Paris, FR
No. of patents:
1
Patents:




Patent Number Title Of Patent Date Issued
7205211 Method for handling semiconductor layers in such a way as to thin same April 17, 2007
This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face; b) preparing the front face of the wafer,

 
 
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