| Patent Number |
Title Of Patent |
Date Issued |
| 4966631 |
Support for photovoltaic arrays |
October 30, 1990 |
| A supported photovoltaic array and method in which support elements are in rows spaced from one another and are bi-directionally spanned by members which mount photovoltaic modules that are separated from one another and are secured to the spanning members by cushioned load-spreading |
| 4959112 |
Selective scribing of materials |
September 25, 1990 |
| The invention provides for placing a material to be scribed in a gaseous atmosphere and contacting the surface of the material with a non-cutting heated tip. The heated tip is rounded to prevent cutting and is moved relative to the material. The tip is heated during the scribing operatio |
| 4947219 |
Particulate semiconductor devices and methods |
August 7, 1990 |
| Particulate semiconductor devices and method of preparation by a low temperature process. A particulate layer is screen printed on a metallized substrate and a rear contact is formed by alloying the semiconductor particules to the substrate. The layer is fired and a front Schottky co |
| 4923524 |
Wide ranging photovoltaic laminates comprising particulate semiconductors |
May 8, 1990 |
| A photovoltaic laminate of different semiconductor layers for providing a wide range of photovoltaic characteristics. One of the layers is an amorphous semiconductor and at least one other of the layers is of crystalline particles. Additional semiconductor layers, both amorphous and |
| 4882233 |
Selectively deposited electrodes onto a substrate |
November 21, 1989 |
| A conductive substrate for the deposition of material thereon which comprises an insulating layer upon said substrate, and a pluralitry of aperatures in said insulating layer containing conductive material formed from said substrate forming a plurality of metallic nucleating centers for |
| 4873119 |
Catalytic deposition of semiconductors |
October 10, 1989 |
| The invention provides a method for preparing amorphous semiconductors by (a) activating a semiconductane gas using a activator to produce mononuclear, reactive fragments or gaseous condensation products which serve as precursors for the deposition of an amorphous semiconductor; and |
| 4851308 |
Solid-state energy storage cell wherein the electrolyte comprises an organic support and an inor |
July 25, 1989 |
| Thin film solid state batteries and electrochromic devices are prepared in which one of the electrodes is an electronic organic polymeric material. The counter electrode is an alkali metal ion acceptor and releaser in an appropriate electrolyte containing an alkali metal salt. The counte |
| 4849029 |
Energy conversion structures |
July 18, 1989 |
| Energy responsive apparatus in which a semiconductor is in contact with an energy transmissive conductor. An electrode with insulated face and side surfaces has an uninsulated surface in contact with the semiconductor, and a further electrode is in contact with the energy transmissive co |
| 4838950 |
Stabilization of intraconnections and interfaces |
June 13, 1989 |
| Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed first electrode and the semiconductor layer in colloidal solutions, or well stirred suspensions of specified metal |
| 4770716 |
Stabilization of intraconnections and interfaces |
September 13, 1988 |
| Stabilization of energy sensitive semiconductor devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and |
| 4696702 |
Method of depositing wide bandgap amorphous semiconductor materials |
September 29, 1987 |
| A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure |
| 4680616 |
Removal of defects from semiconductors |
July 14, 1987 |
| Removal of defects from semiconductors by applying a reverse bias potential to the semiconductors and irradiating the semiconductors with photon energy greater than their bangap energies. |
| 4675467 |
Directed energy conversion of semiconductor materials |
June 23, 1987 |
| Directed energy conversion of semiconductors by the directed energy fusion of a selective region of a semiconductor layer to provide a conductive path through the layer. A conductive path is formed through a semiconductive layer through opposed electrodes by conversion of the semicon |
| 4675466 |
Stabilization of intraconnections and interfaces |
June 23, 1987 |
| Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and |
| 4625071 |
Particulate semiconductors and devices |
November 25, 1986 |
| A semiconductor device in which particles of semiconductive material extend as separate chains from respective first and second contacts. When one of the contacts is of p-type material, the conductive materials that extend from it are of likewise p-material. Similarly, when the contact i |
| 4616246 |
Enhancement of photoconductivity in pyrolytically prepared semiconductors |
October 7, 1986 |
| A semiconductor device with an intrinsic layer that exhibits enhanced photoconductivity by the addition of a non-incidental amount of an n-type dopant. |
| 4604636 |
Microcrystalline semiconductor method and devices |
August 5, 1986 |
| The specification discloses a P-I-N device wherein a double heterojunction is provided by a body of intrinsic amorphous silicon sandwiched between two microcrystalline silicon layers. |
| 4576830 |
Deposition of materials |
March 18, 1986 |
| In a method and apparatus for continuous plasma CVD deposition in and through a vacuum system, box carriers are provided to carry both the substrates and the plasma exciting electrodes through the system. Contamination of the system and cross doping of the applied coatings are reduce |
| 4568409 |
Precision marking of layers |
February 4, 1986 |
| Selective incision of metallic layers overlying semiconductors by laser ablation (evaporation) of selected regions of a dye sensitized coating on each such metallic layer, followed by etching of the metallic layer to avoid objectionable alloying by laser scribing of the metallic layer to |
