| Patent Number |
Title Of Patent |
Date Issued |
| RE38550 |
Method for programmable integrated passive devices |
July 6, 2004 |
| A method for endowing an integrated passive device array structure with a programmable value during manufacturing. The method includes forming a substantially conductive first layer and forming a plurality of passive device array elements of the integrated passive device array structure |
| 6512393 |
Method and apparatus for non-linear termination of a transmission line |
January 28, 2003 |
| An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. The a |
| 6285246 |
Low drop-out regulator capable of functioning in linear and saturated regions of output driver |
September 4, 2001 |
| A low drop-out regulator and methods for producing a low drop-out voltage are provided. A driver transistor adapted for connecting to an input supply voltage and producing an output voltage is provided. In addition, a mirroring transistor is coupled to the driver transistor and a voltage |
| 6281564 |
Programmable integrated passive devices |
August 28, 2001 |
| An integrated passive device array structure with a value that is programmable during manufacturing. The device structure includes a substantially conductive first layer having a plurality of passive device array elements of the integrated passive device array structure disposed abov |
| 6031423 |
Input stage for rail-to-rail input op amp |
February 29, 2000 |
| Methods and apparatus for providing a rail-to-rail op amp are disclosed. The rail-to-rail op amp includes a P-channel input stage and an N-channel input stage. The P-channel input stage includes a set of P-channel MOS transistors and the N-channel input stage includes a set of N-channel |
| 5998275 |
Method for programmable integrated passive devices |
December 7, 1999 |
| A method for endowing an integrated passive device array structure with a programmable value during manufacturing. The method includes forming a substantially conductive first layer and forming a plurality of passive device array elements of the integrated passive device array structure |
| 5770886 |
Semiconductor device with integrated RC network and schottky diode |
June 23, 1998 |
| A semiconductor device which has a resistor, a capacitor, a Schottky diode, and an ESD protection device all formed on a single semiconductor substrate. The resistor and the capacitor are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel |
| 5514612 |
Method of making a semiconductor device with integrated RC network and schottky diode |
May 7, 1996 |
| A semiconductor device which has a resistor, a capacitor, a Schottky diode, and an ESD protection device all formed on a single semiconductor substrate. The resistor and the capacitor are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel |
| 5450263 |
Thin film inductors, inductor network and integration with other passive and active devices |
September 12, 1995 |
| The fabrication of thin film inductors on a substrate, which may include thin film resistors, thin film capacitors, and semiconductor devices. In one embodiment an inductor is fabricated initially on a substrate and then integrated with other devices subsequently formed on the substrate. |
