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Cabot Microelectronics Corporation Patents
Assignee:
Cabot Microelectronics Corporation
Address:
Aurora, IL
No. of patents:
166
Patents:


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Patent Number Title Of Patent Date Issued
D640057 Polishing pad carrier June 21, 2011
8273142 Silicon polishing compositions with high rate and low defectivity September 25, 2012
The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, o
8252687 Barrier slurry for low-k dielectrics August 28, 2012
The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imid
8251777 Polishing slurry for aluminum and aluminum alloys August 28, 2012
The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agen
8247328 Polishing silicon carbide August 21, 2012
The invention provides a method of chemically-mechanically polishing a substrate comprising at least one layer of single crystal silicon carbide. The method utilizes a chemical-mechanical polishing composition comprising a liquid carrier, an abrasive, a catalyst comprising a transiti
8247327 Methods and compositions for polishing silicon-containing substrates August 21, 2012
The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causin
8247326 Method of polishing nickel-phosphorous August 21, 2012
The invention is directed to a method of chemically-mechanically polishing a surface of a substrate, comprising contacting a surface of a substrate comprising nickel-phosphorous with a chemical-mechanical polishing composition comprising wet-process silica, an agent that oxidizes nic
8226841 Polishing composition for nickel-phosphorous memory disks July 24, 2012
The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The in
8167684 Chemical mechanical polishing slurry, its preparation method, and use for the same May 1, 2012
A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified wi
8162723 Method of polishing a tungsten carbide surface April 24, 2012
The invention is directed to a method for polishing a surface comprising tungsten carbide, comprising contacting a surface comprising tungsten carbide with an oxidizing agent, a polishing component, and a liquid carrier, and abrading at least a portion of the surface to polish the su
8157876 Slurry composition containing non-ionic polymer and method for use April 17, 2012
A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably
8138091 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios March 20, 2012
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned po
8101093 Chemical-mechanical polishing composition and method for using the same January 24, 2012
The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising .alpha.-alumina, (b) about 0.05 to about 50 mmol/kg of ions
8075372 Polishing pad with microporous regions December 13, 2011
The invention provides a polishing pad for chemical-mechanical polishing comprising a polymeric material comprising two or more adjacent regions, wherein the regions have the same polymer formulation and the transition between the regions does not include a structurally distinct boundary
8062096 Use of CMP for aluminum mirror and solar cell fabrication November 22, 2011
The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid carrier, and abradi
8057561 Polyoxometalate compositions and methods November 15, 2011
The invention provides an isolated, particulate polyoxometalate complex comprising a water-soluble cationic polymer and a polyoxometalate compound ionically bound to the cationic polymer. The polyoxometalate compound can be an isopolyoxometalate compound, such as an isopolytungstate,
8038752 Metal ion-containing CMP composition and method for using the same October 18, 2011
The invention provides a chemical-mechanical polishing composition comprising an abrasive, metal ions (M) having a M-O--Si bond energy equal to or greater than about 3 kcal/mol, and water. The invention further provides a method for polishing a substrate using the aforementioned chem
8017524 Stable, high rate silicon slurry September 13, 2011
The invention provides a chemical-mechanical polishing composition comprising wet-process silica, a stabilizer compound, a potassium salt, a secondary amine compound, and water. The invention further provides a method of polishing a substrate with the polishing composition.
8008202 Ruthenium CMP compositions and methods August 30, 2011
The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The compo
7998866 Silicon carbide polishing method utilizing water-soluble oxidizers August 16, 2011
The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
7998335 Controlled electrochemical polishing method August 16, 2011
The invention relates to a method of polishing a substrate comprising at least one metal layer by applying an electrochemical potential between the substrate and at least one electrode in contact with a polishing composition comprising a reducing agent or an oxidizing agent.
7998228 Tantalum CMP compositions and methods August 16, 2011
A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises about 0.1 to about 10 percent by weight of a zirconia or fumed alumina abrasive, about 0.1 to about 10 percent by weight of an alkali metal iodate salt and an aqueous carrier. The composition has a pH of at
7994057 Polishing composition and method utilizing abrasive particles treated with an aminosilane August 9, 2011
The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
7955520 Copper-passivating CMP compositions and methods June 7, 2011
The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably
7955519 Composition and method for planarizing surfaces June 7, 2011
The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % .alpha.-alumina particles, wherein the .alpha.-alumina particles have an average diameter of 200 nm or less, and 80% of the .alpha.-alu
7922926 Composition and method for polishing nickel-phosphorous-coated aluminum hard disks April 12, 2011
The invention provides a chemical-mechanical polishing composition consisting essentially of flumed alumina, alpha alumina, silica, a nonionic surfactant, an additive compound selected from the group consisting of glycine, alanine, iminodiacetic acid, and maleic acid, hydrogen peroxi
7897061 Compositions and methods for CMP of phase change alloys March 1, 2011
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a partic
7888929 Method and apparatus for measurement of magnetic permeability of a material February 15, 2011
A system for determining magnetic permeability of a material. Two electrical inductors formed as primary and secondary concentric coils share a common magnetic core space. A first AC voltage applied to the primary coil creates a magnetic flux in the core proportional to the magnetic
7875469 Method of operating and process for fabricating an electron source January 25, 2011
A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be
7846842 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios December 7, 2010
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
7837888 Composition and method for damascene CMP November 23, 2010
The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles
7820067 Halide anions for metal removal rate control October 26, 2010
The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, an oxidizing agent, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing system.
7803711 Low pH barrier slurry based on titanium dioxide September 28, 2010
The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure and (B) particles co
7803203 Compositions and methods for CMP of semiconductor materials September 28, 2010
The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier a
7776230 CMP system utilizing halogen adduct August 17, 2010
The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reac
7754098 Chemical-mechanical polishing composition and method for using the same July 13, 2010
The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5.times.10.sup.-3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures the
7732393 Oxidation-stabilized CMP compositions and methods June 8, 2010
The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radi
7699684 CMP porous pad with component-filled pores April 20, 2010
This invention provides a method for polishing pad comprising a polymeric material having pores and a component that is disposed within the pores.
7686994 Method of preparing a conductive film March 30, 2010
The invention provides a method for producing a conductive film that generates an electric current via field emission of electrons, which method comprises incorporating an electrically conductive material into a thermoplastic polymer. The invention also provides a conductive film and
7678700 Silicon carbide polishing method utilizing water-soluble oxidizers March 16, 2010
The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
7677956 Compositions and methods for dielectric CMP March 16, 2010
The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a metho
7585340 Polishing composition containing polyether amine September 8, 2009
The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.
7582127 Polishing composition for a tungsten-containing substrate September 1, 2009
The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer
7542549 X-ray source with nonparallel geometry June 2, 2009
An improved x-ray generation system produces a converging or diverging radiation pattern particularly suited for substantially cylindrical or spherical treatment devices. In an embodiment, the system comprises a closed or concave outer wall about a closed or concave inner wall. An el
7531105 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios May 12, 2009
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned po
7524347 CMP composition comprising surfactant April 28, 2009
The invention provides a polishing composition comprising fumed alumina, alpha alumina, silica, a nonionic surfactant, a metal chelating organic acid, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate comprising contacting a
7504044 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios March 17, 2009
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
7501346 Gallium and chromium ions for oxide rate enhancement March 10, 2009
The invention provides a chemical-mechanical polishing composition comprising silica, a compound in an amount sufficient to provide about 0.2 mM to about 10 mM of a metal cation selected from the group consisting of gallium (III), chromium (II), and chromium (III), and water, wherein
7497938 Tribo-chronoamperometry as a tool for CMP application March 3, 2009
The invention provides a method of determining at least one electrochemical characteristic of a chemical-mechanical or electrochemical-mechanical polishing system comprising application of a potential between a polishing substrate and an electrode to generate a current, and determini
7485241 Chemical-mechanical polishing composition and method for using the same February 3, 2009
The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5.times.10.sup.-3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtur
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