| Patent Number |
Title Of Patent |
Date Issued |
| 7447298 |
Decontamination and sterilization system using large area x-ray source |
November 4, 2008 |
| A novel x-ray treatment system utilizes one or more large area flat panel sources of x-ray radiation directed into a target zone. A target substance within the target zone is irradiated with x-ray radiation from the one or more flat panel sources, reducing the biological effects of a |
| 7442645 |
Method of polishing a silicon-containing dielectric |
October 28, 2008 |
| The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about |
| 7435165 |
Transparent microporous materials for CMP |
October 14, 2008 |
| The invention is directed to a chemical-mechanical polishing pad substrate comprising a porous material having an average pore size of about 0.01 microns to about 1 micron. The polishing pad substrate has a light transmittance of about 10% or more at at least one wavelength of about |
| 7435161 |
Multi-layer polishing pad material for CMP |
October 14, 2008 |
| The invention is directed to a multi-layer polishing pad for chemical-mechanical polishing comprising a porous polishing layer and a porous bottom layer, wherein the bottom layer is substantially coextensive with the polishing layer, the polishing layer being joined to the bottom lay |
| 7381648 |
Chemical mechanical polishing slurry useful for copper substrates |
June 3, 2008 |
| A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride |
| 7368066 |
Gold CMP composition and method |
May 6, 2008 |
| The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqueous carrier there |
| 7365013 |
System for the preferential removal of silicon oxide |
April 29, 2008 |
| A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 |
| 7317278 |
Method of operating and process for fabricating an electron source |
January 8, 2008 |
| A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be |
| 7317232 |
MEM switching device |
January 8, 2008 |
| A MEM device and method for fabricating a MEM device. A MEM device comprising a lever mechanism residing along a substrate is disclosed. A contact material is deposited on a first surface of the lever mechanism. In one arrangment, the first surface is disposed towards the substrate. A |
| 7316603 |
Compositions and methods for tantalum CMP |
January 8, 2008 |
| A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E.sup.0) of not more than about 0.5 V relative to a standard hydrogen electrode. The |
| 7311862 |
Method for manufacturing microporous CMP materials having controlled pore size |
December 25, 2007 |
| A method of manufacturing a chemical-mechanical polishing (CMP) pad comprises the steps of (a) forming a layer of a polymer resin liquid solution (i.e., a polymer resin dissolved in a solvent); (b) inducing a phase separation in the layer of polymer solution to produce an interpenetr |
| 7311856 |
Polymeric inhibitors for enhanced planarization |
December 25, 2007 |
| The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system. |
| 7306637 |
Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
December 11, 2007 |
| The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the |
| 7294576 |
Tunable selectivity slurries in CMP applications |
November 13, 2007 |
| The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selec |
| 7288021 |
Chemical-mechanical polishing of metals in an oxidized form |
October 30, 2007 |
| The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing syste |
| 7277314 |
Mobile ion memory |
October 2, 2007 |
| An improved high-density digital storage device uses placement of mobile ions within a memory layer to record digital data. In an embodiment of the invention, the mobile ions comprise sodium ions or other alkali metal ions implanted in a silicon oxide memory layer. In a further embodimen |
| 7274772 |
X-ray source with nonparallel geometry |
September 25, 2007 |
| An improved x-ray generation system produces a converging or diverging radiation pattern particularly suited for substantially cylindrical or spherical treatment devices. In an embodiment, the system comprises a closed or concave outer wall about a closed or concave inner wall. An el |
| 7267607 |
Transparent microporous materials for CMP |
September 11, 2007 |
| The invention is directed to a chemical-mechanical polishing pad substrate comprising a microporous closed-cell foam characterized by a narrow pore size distribution in the range of about 0.01 microns to about 10 microns. The polishing pad is produced by foaming a solid polymer sheet wit |
| 7265055 |
CMP of copper/ruthenium substrates |
September 4, 2007 |
| The invention provides a method of chemically-mechanically polishing a substrate. A substrate comprising ruthenium and copper is contacted with a chemical-mechanical polishing system comprising a polishing component, hydrogen peroxide, an organic acid, at least one heterocyclic compound |
| 7264641 |
Polishing pad comprising biodegradable polymer |
September 4, 2007 |
| The invention is directed to a polishing pad for use in chemical-mechanical polishing comprising a biodegradable polymer. The biodegradable polymer comprises a repeat unit selected from the group consisting of glycolic acid, lactic acid, hydroxyalkanoic acids, hydroxybutyric acid, hy |
| 7255810 |
Polishing system comprising a highly branched polymer |
August 14, 2007 |
| The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof. |
| 7247567 |
Method of polishing a tungsten-containing substrate |
July 24, 2007 |
| The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer |
| 7238618 |
System for the preferential removal of silicon oxide |
July 3, 2007 |
| A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an amine, (c) about 0 |
| 7204742 |
Polishing pad comprising hydrophobic region and endpoint detection port |
April 17, 2007 |
| The invention provides a chemical-mechanical polishing pad comprising a polishing layer comprising a hydrophobic region, a hydrophilic region, and an endpoint detection port. The hydrophobic region is substantially adjacent to the endpoint detection port. The hydrophobic region comprises |
| 7198549 |
Continuous contour polishing of a multi-material surface |
April 3, 2007 |
| A chemical-mechanical polishing pad, and method of polishing a substrate using a polishing pad, comprising (a) a resilient subpad, and (b) a polymeric polishing film substantially coextensive with the resilient subpad, wherein the polymeric polishing film comprises (i) a polishing su |
| 7196337 |
Particle processing apparatus and methods |
March 27, 2007 |
| This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacen |
| 7195544 |
CMP porous pad with component-filled pores |
March 27, 2007 |
| The invention provides a polishing pad comprising a polymeric material having pores and a component that is disposed within the pores, as well as a method of polishing a workpiece with the aforesaid polishing pad, and a method for producing the aforesaid polishing pad. |
| 7161247 |
Polishing composition for noble metals |
January 9, 2007 |
| The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, |
| 7160807 |
CMP of noble metals |
January 9, 2007 |
| The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least |
| 7097541 |
CMP method for noble metals |
August 29, 2006 |
| The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP system comprises an abrasive and/or polishing pad, a liqu |
| 7093722 |
Polishing composition storage container |
August 22, 2006 |
| The invention provides devices and methods for removing and trapping large and/or dense abrasive particles from a polishing slurry. The polishing slurry is introduced into a container and allowed to stagnate, thereby causing large and/or dense particles to separate from the slurry under |
| 7091604 |
Three dimensional integrated circuits |
August 15, 2006 |
| A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit includes two or more electrically connected |
| 7071105 |
Method of polishing a silicon-containing dielectric |
July 4, 2006 |
| The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of |
| 7059936 |
Low surface energy CMP pad |
June 13, 2006 |
| The invention provides a polishing pad substrate comprising a copolymer, wherein the copolymer has at least one hydrophilic repeat unit and at least one hydrophobic repeat unit. The invention also provides a polishing pad substrate comprising a polymer, wherein the polymer is a modif |
| 7052364 |
Real time polishing process monitoring |
May 30, 2006 |
| A technique for in situ monitoring of polishing processes and other material removal processes employs a quartz crystal nanobalance embedded in a wafer carrier. Material removed from the wafer is deposited upon the surface of the crystal. The resulting frequency shift of the crystal |
| 7044836 |
Coated metal oxide particles for CMP |
May 16, 2006 |
| The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition |
| 7037175 |
Method of sharpening cutting edges |
May 2, 2006 |
| The invention is directed to a method for polishing a cutting edge on a cutting instrument, comprising contacting a cutting edge of a cutting instrument with a polishing pad and a chemical-mechanical polishing composition comprising particles of an abrasive, and a liquid carrier, whe |
| 7021993 |
Method of polishing a substrate with a polishing system containing conducting polymer |
April 4, 2006 |
| The invention provides a method of polishing a substrate comprising (i) contacting a substrate with a polishing system comprising (a) an abrasive, a polishing pad, a means for oxidizing a substrate, or any combination thereof, (b) a conducting polymer having an electrical conductivit |
| 7004819 |
CMP systems and methods utilizing amine-containing polymers |
February 28, 2006 |
| The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has about 5 or more sequential atoms separating the nitrogen atoms of |
| 7001253 |
Boron-containing polishing system and method |
February 21, 2006 |
| The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer |
| 6998166 |
Polishing pad with oriented pore structure |
February 14, 2006 |
| The invention provides a polishing pad for chemical-mechanical polishing comprising a body, a polishing surface, and a plurality of elongated pores, wherein about 10% or more of the elongated pores have an aspect ratio of about 3:1 or greater and are substantially oriented in a direc |
| 6997777 |
Ultrasonic welding method for the manufacture of a polishing pad comprising an optically transmi |
February 14, 2006 |
| A method of forming a chemical-mechanical polishing pad having at least one optically transmissive region comprising (i) providing a polishing pad comprising an aperture, (ii) inserting an optically transmissive window into the aperture of the polishing pad, and (iii) bonding the opt |
| 6984588 |
Compositions for oxide CMP |
January 10, 2006 |
| A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors. |
| 6984587 |
Integrated polishing and electroless deposition |
January 10, 2006 |
| The invention provides a method of modifying a substrate comprising the steps of providing a substrate comprising a base and a first metal, chemically-mechanically polishing the substrate, depositing a second metal onto the substrate, and polishing the substrate again to remove any m |
| 6976905 |
Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system |
December 20, 2005 |
| A method and system for planarizing or polishing a substrate, particularly a memory or rigid disk, are provided. The method comprises abrading at least a portion of the surface with a polishing system comprising (i) a polishing composition comprising water, an oxidizing agent, and about |
| 6974777 |
CMP compositions for low-k dielectric materials |
December 13, 2005 |
| The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an amphiphilic nonionic surfacta |
| 6960120 |
CMP pad with composite transparent window |
November 1, 2005 |
| The invention is directed to chemical-mechanical polishing pads comprising a transparent window. In one embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material comprises about 20 wt. % or more of the transparent window. I |
| 6953532 |
Method of polishing a lanthanide substrate |
October 11, 2005 |
| The invention provides a method of polishing a substrate comprising a lanthanide-containing metal oxide material. The method comprises the steps of (i) providing a polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an acid, and (c) a liquid ca |
| 6936543 |
CMP method utilizing amphiphilic nonionic surfactants |
August 30, 2005 |
| The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer comprising copper to polish the |
| 6935931 |
Microporous polishing pads |
August 30, 2005 |
| The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 .mu.m or less, wherein about 75% or more of the pores have a pore size within about |
